JPS6386861A - Replenishing device for vapor deposition material - Google Patents
Replenishing device for vapor deposition materialInfo
- Publication number
- JPS6386861A JPS6386861A JP23387486A JP23387486A JPS6386861A JP S6386861 A JPS6386861 A JP S6386861A JP 23387486 A JP23387486 A JP 23387486A JP 23387486 A JP23387486 A JP 23387486A JP S6386861 A JPS6386861 A JP S6386861A
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- deposition material
- source
- vacuum
- reservoir
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 62
- 239000000463 material Substances 0.000 title claims abstract description 55
- 238000010438 heat treatment Methods 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 239000000155 melt Substances 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 abstract description 27
- 230000008020 evaporation Effects 0.000 abstract description 27
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 230000008021 deposition Effects 0.000 description 7
- 239000010409 thin film Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
Abstract
Description
【発明の詳細な説明】
り冊
本発明は、真空薄着法で薄膜を形成する蒸着装置に蒸着
材料を補給する装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an apparatus for supplying vapor deposition material to a vapor deposition apparatus that forms a thin film using a vacuum thin deposition method.
花末度捺直
半導体装置等の製造において、真空蒸着で薄膜を基板上
に形成する蒸着装置は、真空槽で覆われた高真空の成長
室に蒸着材料が入った蒸着源を設置し、加熱手段で蒸着
材料を効率よく気化する温度まで加熱し、気化した蒸着
材料を基板上に蒸着させて薄膜を形成する。In the production of straight-printed semiconductor devices, etc., evaporation equipment uses vacuum evaporation to form thin films on substrates. A evaporation source containing evaporation material is installed in a high-vacuum growth chamber covered with a vacuum chamber, and the evaporation source is heated. The vapor deposition material is heated to a temperature that efficiently vaporizes the vapor deposition material using a means, and the vaporized vapor deposition material is vapor-deposited on the substrate to form a thin film.
蒸着材料を蒸着源に補給する場合、ｉ股が形成された基
板を成長室から取り出し、新しい基板を成長室に補給す
る際に、真空を破って当該基板を取り出すのなら、その
時同時に蒸着材料を補給することができるが、成長室の
真空を破らずに基板の取り出し、補給（基板の入れ換え
）が可能な装置がすでに実現されているため、基板の入
れ換えの際に、蒸着材料を補給することはできない。従
って、蒸着材料を補給するには、必ず成長室の真空を破
らなければならない。When replenishing the evaporation source with the evaporation material, if the substrate on which the i-crotches are formed is taken out from the growth chamber and the new substrate is replenished into the growth chamber, if the vacuum is broken and the substrate is taken out, the evaporation material must be added at the same time. However, since a device that can take out and replenish substrates (substrate replacement) without breaking the vacuum in the growth chamber has already been realized, it is possible to replenish the deposition material when replacing the substrate. I can't. Therefore, in order to replenish the deposition material, the vacuum in the growth chamber must be broken.
■（７゛シよ゛と る。占
しかしながら、成長室の真空を破ると、真空槽の内壁に
ｉ膜の不純物となる水分や酸素等が付着するため、不純
物の混じりζいない良質の１軟を形成するには成長室全
体を加熱するベーキングと呼ばれる作業によって、前記
水分や酸素等を除去する必要がある。■(It is about 7゛.) However, when the vacuum in the growth chamber is broken, moisture and oxygen, which become impurities of the I film, adhere to the inner wall of the vacuum chamber, so it is necessary to In order to form this, it is necessary to remove the moisture, oxygen, etc. by heating the entire growth chamber, a process called baking.
従って、ベーキングの作業回数を減らすためには、真空
を破る回数を減らさなければならない。Therefore, in order to reduce the number of baking operations, the number of times the vacuum is broken must be reduced.
そのために、蒸着源の容積を大さくし、−度に蒸着源に
入る蒸着材料の量を増やして、−回の補給で蒸着材料補
給のサイクルを伸ばすことも考えられる。しかし、蒸着
源の容積を大きくして蒸着材料の２を増やすと、蒸着材
料を融解し、気化させるために余分なエネルギーが必要
になる。To this end, it is conceivable to increase the volume of the evaporation source, increase the amount of evaporation material that enters the evaporation source each time, and extend the cycle of replenishing the evaporation material by replenishing it twice. However, when the volume of the vapor deposition source is increased to increase the amount of vapor deposition material, extra energy is required to melt and vaporize the vapor deposition material.
本発明は上記事情に鑑みて創案されたもので、爆着材料
を加熱するエネルギーを低減し、かつ成長室の真空を破
る回数を減らすことのできる蒸着材料補給装置を提供す
ることを目的としている。The present invention was devised in view of the above circumstances, and aims to provide a vapor deposition material replenishing device that can reduce the energy used to heat the explosive deposition material and reduce the number of times the vacuum in the growth chamber is broken. .
皿距立±解決ま＝６を迦漫王段
本発明に係る蒸着材料補給装置は、加熱手段と、前記加
熱手段によって蒸着材料を融解させ、融解された蒸着材
料を貯蔵するリザーバと、連成管を介して前記リザーバ
から融解された蒸着材料が補給され、当該蒸着材料を前
記加熱手段によって気化させる７４ｉ源とから構成され
る。The vapor deposition material replenishing device according to the present invention is coupled to a heating means, a reservoir for melting the vapor deposition material by the heating means and storing the melted vapor deposition material. A 74i source is supplied with melted vapor deposition material from the reservoir via a tube, and the vapor deposition material is vaporized by the heating means.
詐朋
本発明に係る蒸着材料補給装置では、蒸着源中の蒸着材
料が気化して減少すると、リザーバで融解された蒸着材
料が連成管を介して蒸着源に補給される。In the evaporation material replenishment device according to the present invention, when the evaporation material in the evaporation source is vaporized and reduced, the evaporation material melted in the reservoir is replenished to the evaporation source via the coupling tube.
尖施立
以下、図面を参照して本発明に係る一実施例を説明する
。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
第１図は本発明に係る蒸着材料補給装置の概略図である
。FIG. 1 is a schematic diagram of a vapor deposition material replenishing device according to the present invention.
排気系５０に連結された真空槽１０の内部は、排気系５
０によって高真空の成長室１１として形成されており、
成長室１１には例えばアルミニウムの粉体、インゴット
等の蒸着材料が入ったるつぼ等の蒸着源３１と、リザー
バ３２及び連成管３３が設置され、当該蒸着源３１、リ
ザーバ３２及び連成管３３の周囲には加熱手段４０が配
設されている。The inside of the vacuum chamber 10 connected to the exhaust system 50 is connected to the exhaust system 50.
0 is formed as a high vacuum growth chamber 11,
In the growth chamber 11, a vapor deposition source 31 such as a crucible containing a vapor deposition material such as aluminum powder or an ingot, a reservoir 32, and a coupling tube 33 are installed. A heating means 40 is arranged around the .
陶磁器で形成された蒸着源３１と、蒸着源３１の容積よ
り大きい容積をもつリザーバ３２とは、連成管３３で連
結されており、全体としていわゆる連通管と同様の構成
となっている。A vapor deposition source 31 made of ceramic and a reservoir 32 having a volume larger than the volume of the vapor deposition source 31 are connected by a connecting tube 33, and the overall structure is similar to that of a so-called communicating tube.
さらに、蒸着源３１の周囲には第１ヒータ４１が、リザ
ーバ３２の周囲には第２ヒータ４２が配設されている。Further, a first heater 41 and a second heater 42 are arranged around the vapor deposition source 31 and the reservoir 32, respectively.
また、蒸着源３１の上方所定位置には、薄膜を形成すべ
き所定枚（図面では２枚）の基板２０が設置されている
。Further, at a predetermined position above the vapor deposition source 31, a predetermined number of substrates 20 (two in the drawing) on which thin films are to be formed are installed.
第２ヒータ４２は、リザーバ３２に入っ”ζいる蒸着材
料が融解する温度まで蒸着材料を加熱し、第１ヒータ４
１は、融解されたａ着材料が効率よく気化する温度まで
蒸着材料を加熱する。The second heater 42 heats the vapor deposition material in the reservoir 32 to a temperature at which the vapor deposition material melts, and the first heater 4
In step 1, the vapor deposition material is heated to a temperature at which the melted a-deposition material is efficiently vaporized.
蒸着源３１中の蒸着材料は第１ヒータ４１で加熱されて
気化するので、１着源３１に入っている蒸着材料はしだ
いに減少する。蒸着源３１中の蒸着材料の減少に従って
、リザーバ３２で溶解された蒸着材料が達成管３３を介
して、蒸着源３１に補給される。その際、蒸着源３１の
液面と、リザーバ３２の液面との高さは略等しくなる。Since the vapor deposition material in the vapor deposition source 31 is heated by the first heater 41 and vaporized, the vapor deposition material contained in the first vapor deposition source 31 gradually decreases. As the vapor deposition material in the vapor deposition source 31 decreases, the vapor deposition material melted in the reservoir 32 is replenished to the vapor deposition source 31 via the achieving tube 33. At this time, the heights of the liquid level of the vapor deposition source 31 and the liquid level of the reservoir 32 become approximately equal.
なお、上記実施例では、第１ヒータ４１と第２ヒーク４
２とを同時に発熱させたが、本発明は上記実施例に限定
されることなく、蒸着源３１の蒸着材料が減少した時の
み、第２ヒータ４２を発熱させて蒸着材料を融解し、当
該蒸着材料を連成管３３を介して蒸着源３１に補給する
構成としてもよい。Note that in the above embodiment, the first heater 41 and the second heater 4
However, the present invention is not limited to the above embodiment, and only when the amount of the evaporation material in the evaporation source 31 decreases, the second heater 42 is made to generate heat to melt the evaporation material, and the evaporation material is melted. A configuration may also be adopted in which the material is supplied to the deposition source 31 via the coupling pipe 33.
また、第２ヒータ４２を設けることなく、加熱された蒸
着源３１からの伝導熱によってリザーバ３２を加熱する
ことも可能である。Furthermore, it is also possible to heat the reservoir 32 by conductive heat from the heated vapor deposition source 31 without providing the second heater 42.
さらに、蒸着源３１の周囲には密に形成されたヒータを
、リザーバ３２の周囲には疎に形成されたヒータを配設
し、両ヒータを連結して、蒸着ｔＡ３１とリザーバ３２
との温度に変化をつけてもよい。Furthermore, a densely formed heater is arranged around the evaporation source 31, and a sparsely formed heater is arranged around the reservoir 32, and both heaters are connected, and the evaporation tA31 and the reservoir 32 are connected.
You may also vary the temperature.
なお、上記実施例では、蒸着源３１、リザーバ３２及び
連成管３３を陶磁器で形成したが、導電性のグラファイ
ト等で形成し、第２図に示すように、蒸着源３１の周囲
には第１フイラメント４３を、リザーバ３２の周囲には
第２フイラメント４４を配設し、両フィラメント４３．
４４を図示しない電源の負極に接続し、蒸着源３１、リ
ザーバ３２及び連成管３３を正極に接続して、両フィラ
メント４３．４４から熱電子を蒸着源３１、リザーバ３
２及び達成管３３方向に放出させ、電子（Ｌ撃加熱で蒸
着源３１とリザーバ３２とを加熱することもできる。In the above embodiment, the vapor deposition source 31, the reservoir 32, and the coupling tube 33 were made of ceramics, but they are made of conductive graphite or the like, and as shown in FIG. One filament 43 is disposed around the reservoir 32, a second filament 44 is disposed around the reservoir 32, and both filaments 43.
44 is connected to the negative electrode of a power source (not shown), and the evaporation source 31, reservoir 32, and coupling tube 33 are connected to the positive electrode, and thermionic electrons are transferred from both filaments 43 and 44 to the evaporation source 31 and reservoir 3.
The evaporation source 31 and the reservoir 32 can also be heated by emitting electrons (L) in the direction of the evaporation source 31 and the completion tube 33.
なお、本発明は蒸着材料を一度に融解させ、かつ気化さ
せる構成をとっていないので、融解する温度と、気化が
効率よく行われる温度との差が大きい蒸着材料の場合に
特にを効である。In addition, since the present invention does not have a configuration in which the vapor deposition material is melted and vaporized at the same time, it is particularly effective in the case of vapor deposition materials where there is a large difference between the melting temperature and the temperature at which vaporization is efficiently performed. .
溌泗迎】果
本発明に係る蒸着材料補給装置によれば、蒸着材料を融
解する部分（リザーバ）と、融解された蒸着材料を気化
させる部分（蒸着源）とを別個にしたので、すべての蒸
着材料が気化される温度まで、−度に加熱する必要がな
いので、蒸着材料を加熱するのに使用されるエネルギー
が少な（てすむ。また、−度に大量の蒸着材料をリザー
バに入れることができるので、成長室の真空を破る回数
が少なくなり、ベーキングの作業回数を少なくすること
ができる。According to the vapor deposition material replenishing device according to the present invention, the part that melts the vapor deposition material (reservoir) and the part that vaporizes the melted vapor deposition material (vapor deposition source) are separated. Because there is no need to heat the deposition material to -degrees to the temperature at which it is vaporized, less energy is used to heat the deposition material.Also, it is possible to put a large amount of deposition material into the reservoir at -degrees. As a result, the number of times the vacuum in the growth chamber is broken can be reduced, and the number of baking operations can be reduced.
また、構造が簡単なので故障が発生しにくいという効果
も奏する。Furthermore, since the structure is simple, failures are less likely to occur.
第１図は本発明に係る蒸着材料補給装置の概略図、第２
図は本発明に係る蒸着材料補給装置の他の実施例の概略
図である。
３０・・・蒸着源、３１・・・蒸着源、３２・・・リザ
ーバ、３３・・・連成管、４０・・・加熱手段。FIG. 1 is a schematic diagram of a vapor deposition material replenishment device according to the present invention, and FIG.
The figure is a schematic diagram of another embodiment of the vapor deposition material replenishing device according to the present invention. 30... Vapor deposition source, 31... Vapor deposition source, 32... Reservoir, 33... Compound tube, 40... Heating means.
Claims (1)
解し、当該蒸着材料を貯蔵するリザーバと、連成管を介
して前記リザーバから前記蒸着材料が補給され、当該蒸
着材料を前記加熱手段によって気化させる蒸着源とを具
備することを特徴とする蒸着材料補給装置。(1) a heating means, a reservoir in which the heating means melts a vapor deposition material and stores the vapor deposition material; the vapor deposition material is replenished from the reservoir via a coupling pipe; A vapor deposition material replenishing device characterized by comprising a vapor deposition source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23387486A JPS6386861A (en) | 1986-09-30 | 1986-09-30 | Replenishing device for vapor deposition material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23387486A JPS6386861A (en) | 1986-09-30 | 1986-09-30 | Replenishing device for vapor deposition material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6386861A true JPS6386861A (en) | 1988-04-18 |
Family
ID=16961922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23387486A Pending JPS6386861A (en) | 1986-09-30 | 1986-09-30 | Replenishing device for vapor deposition material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6386861A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9616452B2 (en) | 2011-03-01 | 2017-04-11 | Takayasu Okubo | Shower apparatus |
-
1986
- 1986-09-30 JP JP23387486A patent/JPS6386861A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9616452B2 (en) | 2011-03-01 | 2017-04-11 | Takayasu Okubo | Shower apparatus |
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