JPS61256623A - Thin film formation equipment - Google Patents

Thin film formation equipment

Info

Publication number
JPS61256623A
JPS61256623A JP9740585A JP9740585A JPS61256623A JP S61256623 A JPS61256623 A JP S61256623A JP 9740585 A JP9740585 A JP 9740585A JP 9740585 A JP9740585 A JP 9740585A JP S61256623 A JPS61256623 A JP S61256623A
Authority
JP
Japan
Prior art keywords
crucible
upper lid
vapor
substrate
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9740585A
Other languages
Japanese (ja)
Inventor
Teruo Ina
伊奈 照夫
Masahiro Hanai
正博 花井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9740585A priority Critical patent/JPS61256623A/en
Publication of JPS61256623A publication Critical patent/JPS61256623A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Abstract

PURPOSE:To almost eliminate the leakage of the vapor of an evaporation material from a fitted part and to improve the efficiency of the evaporation of the material to a substrate by making the construction of a crucible wherein the side wall of an upper lid is fitted with the inner wall of the crucible and the upper lid reaches near the bottom of the crucible. CONSTITUTION:This equipment has an upper lid 5a wherein the side wall of the lid is fitted with the inner wall of a crucible 5b and the upper lid 5a is inserted in the crucible 5b and reaches near the bottom of the crucible 5b. An evaporation material 4 is filled to approx. 80% of the volume of the crucible 5b. The operation is similar to that of a conventional equipment wherein the evaporation material 4 heated to a liquid state is evaporated from the liquid surface, the vapor is exhausted from the small hole 5c of the upper lid 5a and evaporated on a substrate 24 placed at the upper part of a vacuum tank 1 but in this equipment, the melted liquid of the evaporation material 4 is filled in the fitted part of the crucible 5b and the upper lid 5a and almost no melted liquid leaks from the fitted part. In this way, this equipment can extremely improve the efficiency of the evaporation of the material on the substrate.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、基板にi4m!!!!を蒸着させる薄膜形
成装置に関するものである。
[Detailed Description of the Invention] [Industrial Field of Application] This invention provides i4m! ! ! ! This invention relates to a thin film forming apparatus for vapor depositing.

〔従来の技術〕[Conventional technology]

第2図は例えば特開昭54−9592号公報に示された
従来の薄膜形成装置を示す断面図であり、図において、
1は真空槽、2は真空排気口、3は真空排気口バルブ、
4は蒸着物質、5は該蒸着物質4を入れるるつぼ、5d
は該るつぼ5の上ぶた、5bはるつぼ本体、5cは上記
るつぼの上ぶた5dの小孔である。ここでるつぼの上ぶ
た5dとるつぼ本体5bとを分離しているのは、加工し
やすさのためと、蒸着物質4の補充を容易にするためで
ある。6はるつぼ支持台、7は上記るつぼ5を加熱する
ために電子を放出する電子ボンバード用フィラメント、
8は上記るつぼ5及び該電子ボンバード用フィラメント
7からの熱放射を遮るるつぼ熱シールド板、9は上記る
つぼ支持台6を支えるるつぼ絶縁物、10は上記るつぼ
熱シールド板を支えるるつぼ熱シールド板絶縁物、11
は上記るつぼ5から噴出した上記蒸着物質4の蒸気から
なるクラスターをイオン化するための電子を放出するイ
オン化フィラメント、12は該イオン化フィラメント1
1から電子を引き出す電子引き出しグリッド、13は上
記イオン化フィラメント11からの熱放射を遮るイオン
化熱シールド板、14は該イオン化熱シールド板13を
支えるイオン化熱シールド板絶縁物、15は上記イオン
化フィラメント11’か、ら上記電子引き出しグリッド
12により引き出されたイオン化電子、16は加速電極
、17は該加速電極を支える加速電極絶縁物、18は上
記るつぼ5から噴出した上記蒸着物質4の中性クラスタ
ー、19は上記イオン化電子15によりイオン化された
上記蒸着物質4のイオン化クラスター、20は上記中性
クラスター18と該イオン化クラスター19を含むクラ
スタービーム、21は該クラスタービーム20を遮るシ
ャッター、22は該シャッター21を支持回転させるシ
ャッター支持棒、23は上記真空槽1を該シャッター支
持棒2□2が貫通す・るシャッター支持欅シール部、2
4は基板、25は基板ホルダー、26は基板ホルダーシ
ール部である。
FIG. 2 is a sectional view showing a conventional thin film forming apparatus disclosed in, for example, Japanese Patent Application Laid-Open No. 54-9592, and in the figure,
1 is a vacuum chamber, 2 is a vacuum exhaust port, 3 is a vacuum exhaust port valve,
4 is a vapor deposition material, 5 is a crucible in which the vapor deposition material 4 is placed, 5d
is the upper lid of the crucible 5, 5b is the crucible body, and 5c is a small hole in the upper lid 5d of the crucible. The reason why the crucible upper lid 5d and the crucible body 5b are separated here is to facilitate processing and to facilitate replenishment of the vapor deposition substance 4. 6 is a crucible support base; 7 is an electron bombardment filament that emits electrons to heat the crucible 5;
8 is a crucible heat shield plate that blocks heat radiation from the crucible 5 and the electronic bombardment filament 7; 9 is a crucible insulator that supports the crucible support 6; and 10 is a crucible heat shield plate insulator that supports the crucible heat shield plate. things, 11
12 is an ionizing filament that emits electrons for ionizing clusters made of vapor of the vapor deposition substance 4 ejected from the crucible 5; 12 is the ionizing filament 1;
13 is an ionization heat shield plate that blocks heat radiation from the ionization filament 11; 14 is an ionization heat shield plate insulator that supports the ionization heat shield plate 13; 15 is an ionization heat shield plate insulator that supports the ionization filament 11'; , 16 is an accelerating electrode, 17 is an accelerating electrode insulator that supports the accelerating electrode, 18 is a neutral cluster of the vapor deposited material 4 ejected from the crucible 5, 19 20 is a cluster beam containing the neutral cluster 18 and the ionized cluster 19; 21 is a shutter that blocks the cluster beam 20; 22 is a shutter that blocks the cluster beam 20; A shutter support rod 23 for supporting and rotating is a shutter support keyaki seal portion 2 through which the shutter support rod 2□2 passes through the vacuum chamber 1.
4 is a substrate, 25 is a substrate holder, and 26 is a substrate holder seal portion.

次に動作について説明する。Next, the operation will be explained.

真空排気口2から真空排気パルプ3を介して真空槽l内
の空気を排気して真空槽1内を高真空領域とする。電子
ボンバードフィラメント7から出た熱電子を蒸着物質4
を入れたるつぼ5に電子衝撃させ、該るつぼ5内の蒸着
物質4を加熱し蒸発させる。該るつぼ5内の蒸着物質4
の蒸気圧が数Torrになる温度まで加熱する。そうす
ることによって、るつぼ上ぶた5dの小孔5cから高真
空領域内へ蒸着物質4の蒸気が噴出する。このとき、噴
出した蒸気はるつぼ5と真空槽1の圧力差による断熱膨
張によって過冷却され、クラスタービーム20となる。
The air inside the vacuum chamber 1 is evacuated from the vacuum exhaust port 2 through the evacuated pulp 3 to make the inside of the vacuum chamber 1 a high vacuum region. Thermal electrons emitted from the electron bombarded filament 7 are transferred to the vapor deposition material 4.
The crucible 5 containing the crucible is bombarded with electrons to heat and evaporate the deposited material 4 in the crucible 5. Deposited substance 4 in the crucible 5
is heated to a temperature where the vapor pressure of the sample becomes several Torr. By doing so, the vapor of the vapor deposition substance 4 is ejected from the small hole 5c of the crucible upper lid 5d into the high vacuum region. At this time, the ejected steam is supercooled by adiabatic expansion due to the pressure difference between the crucible 5 and the vacuum chamber 1, and becomes a cluster beam 20.

該クラスタービーム20はイオン化フィラメント11か
ら電子引き出しグリッド12により引き出されたイオン
化電子15と衝突することにより、クラスターがイオン
化されイオン化クラスター19となる。一部のクラスタ
ーはイオン化電子15と衝突せず、中性クラスター18
としてるつぼ5からの噴出速度で、基板24に衝突し、
該基板24に蒸着される。この際イオン化クラスター1
9は電子引き出しグリッド12及びイオン化熱シールド
板13と加速電極16の間に前者が正、後者が負に形成
された電界によって加速されて、上記中性クラスター1
8と共に基板24に蒸着される。シャッタ21はクラス
タービーム20を制御する開閉装置で、基板24に必要
な厚さのWIIlIを形成するた、めのものである。
The cluster beam 20 collides with the ionized electrons 15 extracted from the ionized filament 11 by the electron extraction grid 12, whereby the cluster is ionized and becomes an ionized cluster 19. Some clusters do not collide with ionized electrons 15 and are neutral clusters 18
collides with the substrate 24 at the speed of ejection from the crucible 5,
It is deposited on the substrate 24. At this time, ionization cluster 1
9 is accelerated by an electric field formed between the electron extraction grid 12, the ionization heat shield plate 13, and the accelerating electrode 16, with the former being positive and the latter being negative, and the neutral cluster 1 is
8 and is deposited on the substrate 24. The shutter 21 is an opening/closing device that controls the cluster beam 20 and is used to form WIIII of a required thickness on the substrate 24.

〔発明、力さ、解決しよう、とする問題点〕従来の薄膜
形成袋装置は、以上のようにるつぼ本体と上ぶ、たかる
つぼ本体の外、側ですり合う構造で、蒸着、物質をるつ
メ内に封・し込めよう、とするものであった” ’l’
、l: そのために、、そのすり合わせ部分から蒸着物
質の蒸気が漏れ易く、るつぼ5.内で蒸発した物質の一
部はこのすり合わせ部分から洩れることとなり、・・本
来基板:に蒸・着、させるべき量の割合、即ち、蒸着効
率が1:低下するという問題点があった。
[Invention, Power, Problems to be Solved] The conventional thin film forming bag device has a structure in which the crucible body and the top cover rub against each other on the outside and side of the crucible body, as described above, to deposit materials. It was intended to be sealed and stuffed into the claw."'l'
, l: Therefore, the vapor of the vapor deposited substance easily leaks from the rubbing part, and the crucible 5. A part of the substance evaporated inside the substrate leaks from this contact area, and there is a problem that the ratio of the amount that should be originally evaporated and deposited on the substrate, that is, the evaporation efficiency decreases by 1:1.

この発明は、・・・・・上、、記のよ:うな問題点を解
消す・るためになされたもの□で、・、るつぼ、内に入
:れた蒸着物質の基板へ□・の蒸着効□率・を高めるこ
とのできる薄膜形成装置を提供す・ることを目的とする
This invention was made in order to solve the problems as described above. The purpose of the present invention is to provide a thin film forming apparatus that can increase vapor deposition efficiency.

〔問題点を解決・す・るための手段〕[Means for solving problems]

この発明に係る薄膜形・・成装置は、るつぼ本体をその
側壁がるつぼ本体の内壁と摺接し、該るつぼ本体内の底
近くまで連、する上ぶたを1有する構造とし・たもので
ある0、・ (作用〕 この発明においては、上ぶたの側壁とるつぼ本体の内壁
との摺接部分には、蒸着物質の溶融液が存在するので、
該摺接部からの蒸着物質の蒸気の漏れは殆ど無くなり、
蒸着物質の基板への蒸着効率を高めることができる。
The thin film forming apparatus according to the present invention has a structure in which the crucible body has an upper lid whose side wall is in sliding contact with the inner wall of the crucible body and extends to near the bottom of the crucible body. ,・(Function) In this invention, since the molten liquid of the vapor deposition substance exists in the sliding contact portion between the side wall of the upper lid and the inner wall of the crucible body,
There is almost no leakage of the vapor of the vapor deposited material from the sliding contact area,
The efficiency of vapor deposition of the vapor deposition material onto the substrate can be increased.

〔、実施例〕〔,Example〕

以下この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第1図は本発明の一実施例による薄膜形成装置を示し、
図中、第2図と同一符号は同一部分を示す。
FIG. 1 shows a thin film forming apparatus according to an embodiment of the present invention,
In the figure, the same symbols as in FIG. 2 indicate the same parts.

5aはその側壁がるつぼ本体5bの内壁と摺接して挿入
され、該るつぼ本体5bの底近くまで達する上ぶたであ
る。ここで蒸着物質4はるつぼ本体5bの容積の約80
%まで入れ、該蒸着物質4がある程度蒸発し、・少なく
なった時点で補充するようにする。
Reference numeral 5a denotes an upper lid whose side wall is inserted into sliding contact with the inner wall of the crucible body 5b and reaches near the bottom of the crucible body 5b. Here, the vapor deposition substance 4 is approximately 80% of the volume of the crucible body 5b.
%, and when the vapor deposition substance 4 evaporates to some extent and becomes low, it is replenished.

次に作用効果について説明する。Next, the effects will be explained.

喀 るつぼ5内で加熱され液体状になった蒸着物質4が液面
から蒸発し、該蒸気が上ぶた5Bの小孔5Cから噴出し
、真空槽1の上部に置かれた基板24に蒸着する動作は
従来装置と同様であるが、本装置では、るつぼ本体5b
と上ぶた5aとの摺接部分には蒸着物質4の熔融液が満
たされており、該摺接部からの溶融液の漏れは、はとん
ど無いこととなる。このようにして本装置では蒸着物質
の基板への蒸着効率を著しく向上することができる。
The vapor deposition substance 4 heated in the crucible 5 and turned into a liquid evaporates from the liquid surface, and the vapor is ejected from the small hole 5C of the upper lid 5B and is vapor deposited on the substrate 24 placed on the top of the vacuum chamber 1. The operation is similar to that of the conventional device, but in this device, the crucible body 5b
The sliding contact area between the upper lid 5a and the upper lid 5a is filled with the melt of the vapor deposition material 4, and there is almost no leakage of the melt from the sliding contact area. In this manner, the present apparatus can significantly improve the efficiency of vapor deposition of the vapor deposition substance onto the substrate.

例えば金を加熱し、1800℃とすると、熔融装置内の
金の蒸気圧力は約3 Torrとなるが、この上ぶた側
壁とるつぼ内壁とのすき間の液体を押し上げて液をるつ
ぼ該へ噴出させるには、該すき間の液体を押し上げるだ
けの圧力が必要となり、内圧3T。
For example, when gold is heated to 1800°C, the gold vapor pressure in the melting device is approximately 3 Torr. In this case, pressure is required to push up the liquid in the gap, and the internal pressure is 3T.

rrとバランスする合液柱は約2mmとなり、該すき間
から金の液体が押し上げられてるつぼ外へ漏れ出るよう
なことは起こりにくい、従って、物質の漏れは、はとん
ど無くすることができる。
The combined liquid column that balances with rr is about 2 mm, and it is unlikely that the gold liquid will be pushed up through the gap and leak out of the crucible. Therefore, material leakage can be almost completely eliminated. .

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明に係る薄膜形成装置によれば、
るつぼを、その底近くまで達する内挿式の上ぶたを有す
るものとしたので、るつぼ本体と上ぶたの間の摺接部か
らの物質蒸気の漏れがなくなり、蒸着物質の基板への蒸
着効率を著しく高めることができ、蒸着材料の歩留りを
向上できる効果がある。
As described above, according to the thin film forming apparatus according to the present invention,
Since the crucible has an insert-type top lid that reaches close to the bottom of the crucible, there is no leakage of material vapor from the sliding contact between the crucible body and the top lid, which improves the efficiency of evaporation of the evaporation material onto the substrate. This has the effect of improving the yield of vapor deposition material.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明の一実施例による薄膜形成装置を示す
断面側面図、第2図は従来のWtPA形成装置を示す断
面側面図である。 5a・・・上ぶた、5b・・・るつぼ本体、5C・・・
小孔なお図中、同一符号は同−又は相当部分を示す。
FIG. 1 is a cross-sectional side view showing a thin film forming apparatus according to an embodiment of the present invention, and FIG. 2 is a cross-sectional side view showing a conventional WtPA forming apparatus. 5a... Upper lid, 5b... Crucible body, 5C...
In the drawings, the same reference numerals indicate the same or corresponding parts.

Claims (1)

【特許請求の範囲】[Claims] (1)るつぼ内の蒸着物質の蒸気を真空槽中に噴出させ
て、基板に薄膜を付着させる薄膜形成装置において、蒸
着物質を収容し該蒸着物質の蒸気を発生させるるつぼは
、その側壁がるつぼ本体の内壁と摺接して該るつぼ本体
内に挿入され該るつぼ本体の底近くまで達する上ぶたを
有することを特徴とする薄膜形成装置。
(1) In a thin film forming apparatus that deposits a thin film on a substrate by ejecting the vapor of a vapor deposition material in a crucible into a vacuum chamber, the crucible that accommodates the vapor deposition material and generates the vapor of the vapor deposition material has a crucible whose side wall is a crucible. A thin film forming apparatus characterized by having an upper lid that is inserted into the crucible main body in sliding contact with the inner wall of the main body and reaches near the bottom of the crucible main body.
JP9740585A 1985-05-08 1985-05-08 Thin film formation equipment Pending JPS61256623A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9740585A JPS61256623A (en) 1985-05-08 1985-05-08 Thin film formation equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9740585A JPS61256623A (en) 1985-05-08 1985-05-08 Thin film formation equipment

Publications (1)

Publication Number Publication Date
JPS61256623A true JPS61256623A (en) 1986-11-14

Family

ID=14191592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9740585A Pending JPS61256623A (en) 1985-05-08 1985-05-08 Thin film formation equipment

Country Status (1)

Country Link
JP (1) JPS61256623A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5099791A (en) * 1989-09-08 1992-03-31 Mitsubishi Denki Kabushiki Kaisha Cluster beam thin film deposition apparatus with thermionic electron control

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5099791A (en) * 1989-09-08 1992-03-31 Mitsubishi Denki Kabushiki Kaisha Cluster beam thin film deposition apparatus with thermionic electron control

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