JPS6425516A - Epitaxial growth method for semiconductor - Google Patents
Epitaxial growth method for semiconductorInfo
- Publication number
- JPS6425516A JPS6425516A JP18251887A JP18251887A JPS6425516A JP S6425516 A JPS6425516 A JP S6425516A JP 18251887 A JP18251887 A JP 18251887A JP 18251887 A JP18251887 A JP 18251887A JP S6425516 A JPS6425516 A JP S6425516A
- Authority
- JP
- Japan
- Prior art keywords
- growing
- substrate
- epitaxial
- chambers
- movpe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To obtain a crystal having excellent crystalline property and substrate interface state, by liquid-phase and vapor-phase epitaxies in an atmosphere required for each growth in the same growing systems continuously or alternately. CONSTITUTION:A furnace core tube 3 is divided into two chambers with a gate valves 5. A gas introducing part 6 and a sliding type boat 7 for growing by an LPE method are arranged on one side. A substrate is slidden with a manipulating rod 8. Then melt back and epitaxial growing are performed. A sliding part 9 of a sliding type boat, on which the substrate 1 is mounted, is made to pass through the opened gate valve 5 by using the manipulating rod in the other chamber for MOVPE growing. Thus the sliding part 9 is set. The gate valve 5 is closed, and the MOVPE growing step is started. Thus the two chambers can maintain the independent vacuum and atmospheric states even if they are provided in the same growing system. The substrate for growing is not exposed to outer air. The epitaxial growings can be continuously or alternately performed by using two kinds of the growing methods without oxidation and mixing of impurities.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18251887A JPS6425516A (en) | 1987-07-22 | 1987-07-22 | Epitaxial growth method for semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18251887A JPS6425516A (en) | 1987-07-22 | 1987-07-22 | Epitaxial growth method for semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6425516A true JPS6425516A (en) | 1989-01-27 |
Family
ID=16119702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18251887A Pending JPS6425516A (en) | 1987-07-22 | 1987-07-22 | Epitaxial growth method for semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6425516A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4972808A (en) * | 1989-04-03 | 1990-11-27 | Nissan Motor Co., Ltd. | Arrangement of cooling system for transversely mounted internal combustion engine |
-
1987
- 1987-07-22 JP JP18251887A patent/JPS6425516A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4972808A (en) * | 1989-04-03 | 1990-11-27 | Nissan Motor Co., Ltd. | Arrangement of cooling system for transversely mounted internal combustion engine |
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