JPS6424459A - Semiconductor element of mis structure and manufacture thereof - Google Patents

Semiconductor element of mis structure and manufacture thereof

Info

Publication number
JPS6424459A
JPS6424459A JP18161887A JP18161887A JPS6424459A JP S6424459 A JPS6424459 A JP S6424459A JP 18161887 A JP18161887 A JP 18161887A JP 18161887 A JP18161887 A JP 18161887A JP S6424459 A JPS6424459 A JP S6424459A
Authority
JP
Japan
Prior art keywords
gate
resist
insulator
source
make
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18161887A
Other languages
Japanese (ja)
Inventor
Takahiro Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP18161887A priority Critical patent/JPS6424459A/en
Publication of JPS6424459A publication Critical patent/JPS6424459A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make it possible to prevent an increase in the resistance of source and drain diffused layers without needing an impurity doping for inhibiting depletion layers by a method wherein the title element possesses an insulator limiting just under a gate in a part, which is held between the source and drain diffused layers, of the interior of a semiconductor substrate. CONSTITUTION:A gate oxide film 13 is grown on the surface of a P-type Si substrate 15 and a P-type resist 16 is coated thereon. A part which is used as a gate is exposed to remove part of the resist and oxygen ions are implanted to make an insulator 11. A gate electrode material is deposited using the resist 16 as a mask to make a gate electrode 14 by lift-off. The resist 16 is removed and source and drain diffused layers 12 are formed by ion-implantation. After an interlayer insulating film 17 is grown, contact holes are bored and wirings 18 are provided. A MIS transistor obtained possesses the insulator only just under the gate in the substrate.
JP18161887A 1987-07-20 1987-07-20 Semiconductor element of mis structure and manufacture thereof Pending JPS6424459A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18161887A JPS6424459A (en) 1987-07-20 1987-07-20 Semiconductor element of mis structure and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18161887A JPS6424459A (en) 1987-07-20 1987-07-20 Semiconductor element of mis structure and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6424459A true JPS6424459A (en) 1989-01-26

Family

ID=16103944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18161887A Pending JPS6424459A (en) 1987-07-20 1987-07-20 Semiconductor element of mis structure and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6424459A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5759358A (en) * 1994-05-31 1998-06-02 Rohm And Haas Company Process for pure grade acrylic acid
US6570217B1 (en) 1998-04-24 2003-05-27 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5759358A (en) * 1994-05-31 1998-06-02 Rohm And Haas Company Process for pure grade acrylic acid
US6570217B1 (en) 1998-04-24 2003-05-27 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same

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