JPS6424459A - Semiconductor element of mis structure and manufacture thereof - Google Patents
Semiconductor element of mis structure and manufacture thereofInfo
- Publication number
- JPS6424459A JPS6424459A JP18161887A JP18161887A JPS6424459A JP S6424459 A JPS6424459 A JP S6424459A JP 18161887 A JP18161887 A JP 18161887A JP 18161887 A JP18161887 A JP 18161887A JP S6424459 A JPS6424459 A JP S6424459A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- resist
- insulator
- source
- make
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To make it possible to prevent an increase in the resistance of source and drain diffused layers without needing an impurity doping for inhibiting depletion layers by a method wherein the title element possesses an insulator limiting just under a gate in a part, which is held between the source and drain diffused layers, of the interior of a semiconductor substrate. CONSTITUTION:A gate oxide film 13 is grown on the surface of a P-type Si substrate 15 and a P-type resist 16 is coated thereon. A part which is used as a gate is exposed to remove part of the resist and oxygen ions are implanted to make an insulator 11. A gate electrode material is deposited using the resist 16 as a mask to make a gate electrode 14 by lift-off. The resist 16 is removed and source and drain diffused layers 12 are formed by ion-implantation. After an interlayer insulating film 17 is grown, contact holes are bored and wirings 18 are provided. A MIS transistor obtained possesses the insulator only just under the gate in the substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18161887A JPS6424459A (en) | 1987-07-20 | 1987-07-20 | Semiconductor element of mis structure and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18161887A JPS6424459A (en) | 1987-07-20 | 1987-07-20 | Semiconductor element of mis structure and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6424459A true JPS6424459A (en) | 1989-01-26 |
Family
ID=16103944
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18161887A Pending JPS6424459A (en) | 1987-07-20 | 1987-07-20 | Semiconductor element of mis structure and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6424459A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5759358A (en) * | 1994-05-31 | 1998-06-02 | Rohm And Haas Company | Process for pure grade acrylic acid |
US6570217B1 (en) | 1998-04-24 | 2003-05-27 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
-
1987
- 1987-07-20 JP JP18161887A patent/JPS6424459A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5759358A (en) * | 1994-05-31 | 1998-06-02 | Rohm And Haas Company | Process for pure grade acrylic acid |
US6570217B1 (en) | 1998-04-24 | 2003-05-27 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
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