JPS6423569A - Schottky barrier semiconductor - Google Patents

Schottky barrier semiconductor

Info

Publication number
JPS6423569A
JPS6423569A JP17888087A JP17888087A JPS6423569A JP S6423569 A JPS6423569 A JP S6423569A JP 17888087 A JP17888087 A JP 17888087A JP 17888087 A JP17888087 A JP 17888087A JP S6423569 A JPS6423569 A JP S6423569A
Authority
JP
Japan
Prior art keywords
layer
guard ring
contact part
epitaxial layer
penetrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17888087A
Other languages
Japanese (ja)
Inventor
Tsuneo Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP17888087A priority Critical patent/JPS6423569A/en
Publication of JPS6423569A publication Critical patent/JPS6423569A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To enlarge a backward withstand voltage and to lower a forward voltage, forming an epitaxial layer provided with a guard ring layer on a silicon substrate and next by etching the surface of the silicon substrate as deeply as the guard ring layer is not penetrated and next by forming a contact part. CONSTITUTION:An opening part 15 is formed on a protective film 13 and a CVD silicon oxide film 14 which cover an epitaxial layer 11 provided with a guard ring layer 12, so that the surface of the epitaxial layer 11 is exposed. Thereupon the surface is etched so in depth (h) that the guard ring 12 is not penetrated, and a contact part 18 is formed in a recessed shape. Protective film 13's scars produced on edge peripheral walls of the contact part 18 are removed to taper the edge peripheral walls. Next, the substrate is evaporated on a region ranging from the contact part 18 to the periphery of the opening part 15 in an atmosphere of high vacuum in an electron beam evaporator or the like until an electrode metallic layer 16 is formed in a prescribed thickness. Finally an electrode layer 17 is formed so as to cover the surface of the electrode metallic layer 16.
JP17888087A 1987-07-20 1987-07-20 Schottky barrier semiconductor Pending JPS6423569A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17888087A JPS6423569A (en) 1987-07-20 1987-07-20 Schottky barrier semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17888087A JPS6423569A (en) 1987-07-20 1987-07-20 Schottky barrier semiconductor

Publications (1)

Publication Number Publication Date
JPS6423569A true JPS6423569A (en) 1989-01-26

Family

ID=16056313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17888087A Pending JPS6423569A (en) 1987-07-20 1987-07-20 Schottky barrier semiconductor

Country Status (1)

Country Link
JP (1) JPS6423569A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0465151A2 (en) * 1990-06-29 1992-01-08 Canon Kabushiki Kaisha Semiconductor device with Shottky junction
FR2837322A1 (en) * 2002-03-14 2003-09-19 Commissariat Energie Atomique SiCOI SUBSTRATE POWER SCHOTTKY DIODE AND METHOD FOR MAKING SAME

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0465151A2 (en) * 1990-06-29 1992-01-08 Canon Kabushiki Kaisha Semiconductor device with Shottky junction
US5438218A (en) * 1990-06-29 1995-08-01 Canon Kk Semiconductor device with Shottky junction
FR2837322A1 (en) * 2002-03-14 2003-09-19 Commissariat Energie Atomique SiCOI SUBSTRATE POWER SCHOTTKY DIODE AND METHOD FOR MAKING SAME
WO2003077321A3 (en) * 2002-03-14 2004-04-15 Commissariat Energie Atomique Schottky power diode comprising a sicoi substrate and the method of producing one such diode
US7166894B2 (en) 2002-03-14 2007-01-23 Commissariat A L'energie Atomique Schottky power diode with SiCOI substrate and process for making such diode

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