JPS6422051U - - Google Patents
Info
- Publication number
- JPS6422051U JPS6422051U JP11733887U JP11733887U JPS6422051U JP S6422051 U JPS6422051 U JP S6422051U JP 11733887 U JP11733887 U JP 11733887U JP 11733887 U JP11733887 U JP 11733887U JP S6422051 U JPS6422051 U JP S6422051U
- Authority
- JP
- Japan
- Prior art keywords
- power module
- mounting member
- metal fitting
- mounting
- presser metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11733887U JPS6422051U (enrdf_load_html_response) | 1987-07-30 | 1987-07-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11733887U JPS6422051U (enrdf_load_html_response) | 1987-07-30 | 1987-07-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6422051U true JPS6422051U (enrdf_load_html_response) | 1989-02-03 |
Family
ID=31360710
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11733887U Pending JPS6422051U (enrdf_load_html_response) | 1987-07-30 | 1987-07-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6422051U (enrdf_load_html_response) |
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6916745B2 (en) | 2003-05-20 | 2005-07-12 | Fairchild Semiconductor Corporation | Structure and method for forming a trench MOSFET having self-aligned features |
| US6991977B2 (en) | 2001-10-17 | 2006-01-31 | Fairchild Semiconductor Corporation | Method for forming a semiconductor structure with improved smaller forward voltage loss and higher blocking capability |
| US7033891B2 (en) | 2002-10-03 | 2006-04-25 | Fairchild Semiconductor Corporation | Trench gate laterally diffused MOSFET devices and methods for making such devices |
| US7061066B2 (en) | 2001-10-17 | 2006-06-13 | Fairchild Semiconductor Corporation | Schottky diode using charge balance structure |
| US7132712B2 (en) | 2002-11-05 | 2006-11-07 | Fairchild Semiconductor Corporation | Trench structure having one or more diodes embedded therein adjacent a PN junction |
| US7265415B2 (en) | 2004-10-08 | 2007-09-04 | Fairchild Semiconductor Corporation | MOS-gated transistor with reduced miller capacitance |
| US7265416B2 (en) | 2002-02-23 | 2007-09-04 | Fairchild Korea Semiconductor Ltd. | High breakdown voltage low on-resistance lateral DMOS transistor |
| US7291894B2 (en) | 2002-07-18 | 2007-11-06 | Fairchild Semiconductor Corporation | Vertical charge control semiconductor device with low output capacitance |
| US7301203B2 (en) | 2003-11-28 | 2007-11-27 | Fairchild Korea Semiconductor Ltd. | Superjunction semiconductor device |
| US7319256B1 (en) | 2006-06-19 | 2008-01-15 | Fairchild Semiconductor Corporation | Shielded gate trench FET with the shield and gate electrodes being connected together |
| US7345342B2 (en) | 2001-01-30 | 2008-03-18 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
| US7352036B2 (en) | 2004-08-03 | 2008-04-01 | Fairchild Semiconductor Corporation | Semiconductor power device having a top-side drain using a sinker trench |
| US7368777B2 (en) | 2003-12-30 | 2008-05-06 | Fairchild Semiconductor Corporation | Accumulation device with charge balance structure and method of forming the same |
| US7385248B2 (en) | 2005-08-09 | 2008-06-10 | Fairchild Semiconductor Corporation | Shielded gate field effect transistor with improved inter-poly dielectric |
| US7446374B2 (en) | 2006-03-24 | 2008-11-04 | Fairchild Semiconductor Corporation | High density trench FET with integrated Schottky diode and method of manufacture |
| US7504306B2 (en) | 2005-04-06 | 2009-03-17 | Fairchild Semiconductor Corporation | Method of forming trench gate field effect transistor with recessed mesas |
| JP2009158631A (ja) * | 2007-12-26 | 2009-07-16 | Keihin Corp | パワードライブユニット |
| JP2009158632A (ja) * | 2007-12-26 | 2009-07-16 | Keihin Corp | パワードライブユニット |
| US7576388B1 (en) | 2002-10-03 | 2009-08-18 | Fairchild Semiconductor Corporation | Trench-gate LDMOS structures |
| US7625793B2 (en) | 1999-12-20 | 2009-12-01 | Fairchild Semiconductor Corporation | Power MOS device with improved gate charge performance |
| US7638841B2 (en) | 2003-05-20 | 2009-12-29 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
| JP2012054262A (ja) * | 2010-08-31 | 2012-03-15 | Mitsubishi Electric Corp | 半導体装置 |
| JP2015133429A (ja) * | 2014-01-14 | 2015-07-23 | 富士通株式会社 | 固定装置及び電子装置 |
-
1987
- 1987-07-30 JP JP11733887U patent/JPS6422051U/ja active Pending
Cited By (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7625793B2 (en) | 1999-12-20 | 2009-12-01 | Fairchild Semiconductor Corporation | Power MOS device with improved gate charge performance |
| US7345342B2 (en) | 2001-01-30 | 2008-03-18 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
| US7429523B2 (en) | 2001-10-17 | 2008-09-30 | Fairchild Semiconductor Corporation | Method of forming schottky diode with charge balance structure |
| US6991977B2 (en) | 2001-10-17 | 2006-01-31 | Fairchild Semiconductor Corporation | Method for forming a semiconductor structure with improved smaller forward voltage loss and higher blocking capability |
| US7061066B2 (en) | 2001-10-17 | 2006-06-13 | Fairchild Semiconductor Corporation | Schottky diode using charge balance structure |
| US7265416B2 (en) | 2002-02-23 | 2007-09-04 | Fairchild Korea Semiconductor Ltd. | High breakdown voltage low on-resistance lateral DMOS transistor |
| US7605040B2 (en) | 2002-02-23 | 2009-10-20 | Fairchild Korea Semiconductor Ltd. | Method of forming high breakdown voltage low on-resistance lateral DMOS transistor |
| US7291894B2 (en) | 2002-07-18 | 2007-11-06 | Fairchild Semiconductor Corporation | Vertical charge control semiconductor device with low output capacitance |
| US7033891B2 (en) | 2002-10-03 | 2006-04-25 | Fairchild Semiconductor Corporation | Trench gate laterally diffused MOSFET devices and methods for making such devices |
| US7576388B1 (en) | 2002-10-03 | 2009-08-18 | Fairchild Semiconductor Corporation | Trench-gate LDMOS structures |
| US7132712B2 (en) | 2002-11-05 | 2006-11-07 | Fairchild Semiconductor Corporation | Trench structure having one or more diodes embedded therein adjacent a PN junction |
| US7582519B2 (en) | 2002-11-05 | 2009-09-01 | Fairchild Semiconductor Corporation | Method of forming a trench structure having one or more diodes embedded therein adjacent a PN junction |
| US7344943B2 (en) | 2003-05-20 | 2008-03-18 | Fairchild Semiconductor Corporation | Method for forming a trench MOSFET having self-aligned features |
| US8889511B2 (en) | 2003-05-20 | 2014-11-18 | Fairchild Semiconductor Corporation | Methods of manufacturing power semiconductor devices with trenched shielded split gate transistor |
| US7638841B2 (en) | 2003-05-20 | 2009-12-29 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
| US7595524B2 (en) | 2003-05-20 | 2009-09-29 | Fairchild Semiconductor Corporation | Power device with trenches having wider upper portion than lower portion |
| US8936985B2 (en) | 2003-05-20 | 2015-01-20 | Fairchild Semiconductor Corporation | Methods related to power semiconductor devices with thick bottom oxide layers |
| US6916745B2 (en) | 2003-05-20 | 2005-07-12 | Fairchild Semiconductor Corporation | Structure and method for forming a trench MOSFET having self-aligned features |
| US7301203B2 (en) | 2003-11-28 | 2007-11-27 | Fairchild Korea Semiconductor Ltd. | Superjunction semiconductor device |
| US7368777B2 (en) | 2003-12-30 | 2008-05-06 | Fairchild Semiconductor Corporation | Accumulation device with charge balance structure and method of forming the same |
| US7352036B2 (en) | 2004-08-03 | 2008-04-01 | Fairchild Semiconductor Corporation | Semiconductor power device having a top-side drain using a sinker trench |
| US7265415B2 (en) | 2004-10-08 | 2007-09-04 | Fairchild Semiconductor Corporation | MOS-gated transistor with reduced miller capacitance |
| US7504306B2 (en) | 2005-04-06 | 2009-03-17 | Fairchild Semiconductor Corporation | Method of forming trench gate field effect transistor with recessed mesas |
| US7598144B2 (en) | 2005-08-09 | 2009-10-06 | Fairchild Semiconductor Corporation | Method for forming inter-poly dielectric in shielded gate field effect transistor |
| US7385248B2 (en) | 2005-08-09 | 2008-06-10 | Fairchild Semiconductor Corporation | Shielded gate field effect transistor with improved inter-poly dielectric |
| US7446374B2 (en) | 2006-03-24 | 2008-11-04 | Fairchild Semiconductor Corporation | High density trench FET with integrated Schottky diode and method of manufacture |
| US7473603B2 (en) | 2006-06-19 | 2009-01-06 | Fairchild Semiconductor Corporation | Method for forming a shielded gate trench FET with the shield and gate electrodes being connected together |
| US7319256B1 (en) | 2006-06-19 | 2008-01-15 | Fairchild Semiconductor Corporation | Shielded gate trench FET with the shield and gate electrodes being connected together |
| JP2009158632A (ja) * | 2007-12-26 | 2009-07-16 | Keihin Corp | パワードライブユニット |
| JP2009158631A (ja) * | 2007-12-26 | 2009-07-16 | Keihin Corp | パワードライブユニット |
| JP2012054262A (ja) * | 2010-08-31 | 2012-03-15 | Mitsubishi Electric Corp | 半導体装置 |
| JP2015133429A (ja) * | 2014-01-14 | 2015-07-23 | 富士通株式会社 | 固定装置及び電子装置 |