JPS6421789A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS6421789A
JPS6421789A JP62177713A JP17771387A JPS6421789A JP S6421789 A JPS6421789 A JP S6421789A JP 62177713 A JP62177713 A JP 62177713A JP 17771387 A JP17771387 A JP 17771387A JP S6421789 A JPS6421789 A JP S6421789A
Authority
JP
Japan
Prior art keywords
address signal
necessitated
output
internal address
switching means
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62177713A
Other languages
Japanese (ja)
Inventor
Yasuhiro Konishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62177713A priority Critical patent/JPS6421789A/en
Publication of JPS6421789A publication Critical patent/JPS6421789A/en
Pending legal-status Critical Current

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  • Dram (AREA)

Abstract

PURPOSE:To shorten time until the inverted signal of an internal address is fixed, and to shorten access time more by constituting a circuit, not necessitating a clocked inverter. CONSTITUTION:A second switching means, which allows an external address signal of the output of a first switching means to pass through it only when the external address signal ext Ai is necessitated, and a third switching means, which allows the internal address signal Qi of the output of an internal address generating device to pass through it only when the external address signal ext Ai is not necessitated and in addition, the internal address signal Qi is necessitated, are provided. Accordingly, because the output of a latch circuit means can be fixed faster, a storing means can be accessed with shorter address hold time and within shorter access time. Thus, the semiconductor memory device with faster operating speed is obtained.
JP62177713A 1987-07-15 1987-07-15 Semiconductor memory device Pending JPS6421789A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62177713A JPS6421789A (en) 1987-07-15 1987-07-15 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62177713A JPS6421789A (en) 1987-07-15 1987-07-15 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS6421789A true JPS6421789A (en) 1989-01-25

Family

ID=16035808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62177713A Pending JPS6421789A (en) 1987-07-15 1987-07-15 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS6421789A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08241593A (en) * 1995-01-25 1996-09-17 Samsung Electron Co Ltd Address buffer circuit of semiconductor memory device
EP0873874A2 (en) 1997-04-25 1998-10-28 Brother Kogyo Kabushiki Kaisha Thermal transfer type image forming device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08241593A (en) * 1995-01-25 1996-09-17 Samsung Electron Co Ltd Address buffer circuit of semiconductor memory device
EP0873874A2 (en) 1997-04-25 1998-10-28 Brother Kogyo Kabushiki Kaisha Thermal transfer type image forming device
US6166754A (en) * 1997-04-25 2000-12-26 Brother Kogyo Kabushiki Kaisha Thermal transfer type image forming device

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