JPS6420646A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS6420646A
JPS6420646A JP62176189A JP17618987A JPS6420646A JP S6420646 A JPS6420646 A JP S6420646A JP 62176189 A JP62176189 A JP 62176189A JP 17618987 A JP17618987 A JP 17618987A JP S6420646 A JPS6420646 A JP S6420646A
Authority
JP
Japan
Prior art keywords
film
trench
sidewall
substrate
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62176189A
Other languages
Japanese (ja)
Inventor
Naoto Matsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62176189A priority Critical patent/JPS6420646A/en
Publication of JPS6420646A publication Critical patent/JPS6420646A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To prevent an alpha-ray software error by forming a single crystalline layer containing a reverse conductivity type impurity and an oxide film layer on the sidewall of a groove or an opening formed in a first conductivity type substrate in predetermined steps. CONSTITUTION:After an oxide film 9 is formed on a P-type Si substrate 6, the film 9 is partly removed by etching. With the film 9 as a mask a trench is opened in the substrate 6. With the film 9 as a mask oxygen ions are obliquely implanted into the sidewall of the trench to form an oxide film 8 on the periphery of the sidewall. Then, a single crystal 7 is formed by annealing, B is implanted to the bottom of the trench, and an intercell isolating region 5. An N-type impurity layer (As-doping layer) 3 is formed on the sidewall. A wafer is oxidized to form a capacity insulating film 2 on the inner wall. Polysilicon is buried in the trench, P is diffused, flattened to form a plate electrode 1. Thus, electrons induced by the invasion of alpha-ray are reflected on the film 8, and information is not reversed.
JP62176189A 1987-07-15 1987-07-15 Semiconductor device and manufacture thereof Pending JPS6420646A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62176189A JPS6420646A (en) 1987-07-15 1987-07-15 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62176189A JPS6420646A (en) 1987-07-15 1987-07-15 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6420646A true JPS6420646A (en) 1989-01-24

Family

ID=16009203

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62176189A Pending JPS6420646A (en) 1987-07-15 1987-07-15 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6420646A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS525286A (en) * 1975-06-30 1977-01-14 Ibm Method of producing ic device
JPS6167955A (en) * 1984-09-11 1986-04-08 Fujitsu Ltd Semiconductor memory device and manufacture thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS525286A (en) * 1975-06-30 1977-01-14 Ibm Method of producing ic device
JPS6167955A (en) * 1984-09-11 1986-04-08 Fujitsu Ltd Semiconductor memory device and manufacture thereof

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