JPS6419657A - Manufacture of electron emitting element - Google Patents
Manufacture of electron emitting elementInfo
- Publication number
- JPS6419657A JPS6419657A JP17483987A JP17483987A JPS6419657A JP S6419657 A JPS6419657 A JP S6419657A JP 17483987 A JP17483987 A JP 17483987A JP 17483987 A JP17483987 A JP 17483987A JP S6419657 A JPS6419657 A JP S6419657A
- Authority
- JP
- Japan
- Prior art keywords
- electron emitting
- film
- emitting material
- laser
- emitting part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/316—Cold cathodes, e.g. field-emissive cathode having an electric field parallel to the surface, e.g. thin film cathodes
Abstract
PURPOSE:To make it possible to form an electron emitting part in a desired position with the degree of change uniform and reproducibility excellent by partially heating the electron emitting part of a film made of electron emitting material provided between electrodes which oppose each other and changing the film of the electron emitting material by performing heat treatment through current application for the film. CONSTITUTION:A formed element is heated among the air or inside a vacuum vessel by partially irradiating infrared ray lasers and semiconductor laser such as CO2 laser, glass laser, etc. or infrared light 16, whose wave lengths are about 1-10mum to, a desired position to form an electron emitting part 15 on the film 13 made of electron emitting material. At the same time, the film of electron emitting material is heated by applying power required for formation by the current application heat treatment so as to break, deform or transmute only that part, and the electron emitting part 15 is formed in the film of the electron emitting material by the shift of a laser or a board. Hereby, the change degree in the film of the electron emitting material can be uniformed and the electron emitting part can be formed uniform without unevenness between elements and excellent in reproducibility.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17483987A JP2614047B2 (en) | 1987-07-15 | 1987-07-15 | Method for manufacturing electron-emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17483987A JP2614047B2 (en) | 1987-07-15 | 1987-07-15 | Method for manufacturing electron-emitting device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6419657A true JPS6419657A (en) | 1989-01-23 |
JP2614047B2 JP2614047B2 (en) | 1997-05-28 |
Family
ID=15985556
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17483987A Expired - Fee Related JP2614047B2 (en) | 1987-07-15 | 1987-07-15 | Method for manufacturing electron-emitting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2614047B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6334803B1 (en) | 1996-04-26 | 2002-01-01 | Canon Kabushiki Kaisha | Method of manufacturing electron-emitting device, electron source and image-forming apparatus using the same |
US6900581B2 (en) | 1999-02-22 | 2005-05-31 | Canon Kabushiki Kaisha | Electron-emitting device, electron source and image-forming apparatus, and manufacturing methods thereof |
-
1987
- 1987-07-15 JP JP17483987A patent/JP2614047B2/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6334803B1 (en) | 1996-04-26 | 2002-01-01 | Canon Kabushiki Kaisha | Method of manufacturing electron-emitting device, electron source and image-forming apparatus using the same |
US6366015B1 (en) | 1996-04-26 | 2002-04-02 | Canon Kabushiki Kaisha | Method of manufacturing electron-emitting device, electron source and image-forming apparatus using the same |
US6900581B2 (en) | 1999-02-22 | 2005-05-31 | Canon Kabushiki Kaisha | Electron-emitting device, electron source and image-forming apparatus, and manufacturing methods thereof |
US7067336B1 (en) | 1999-02-22 | 2006-06-27 | Canon Kabushiki Kaisha | Electron-emitting device, electron source and image-forming apparatus, and manufacturing methods thereof |
Also Published As
Publication number | Publication date |
---|---|
JP2614047B2 (en) | 1997-05-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |