JPS6413119U - - Google Patents
Info
- Publication number
- JPS6413119U JPS6413119U JP10788587U JP10788587U JPS6413119U JP S6413119 U JPS6413119 U JP S6413119U JP 10788587 U JP10788587 U JP 10788587U JP 10788587 U JP10788587 U JP 10788587U JP S6413119 U JPS6413119 U JP S6413119U
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- electrodes
- plasma cvd
- substrate
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 230000002093 peripheral effect Effects 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10788587U JPS6413119U (me) | 1987-07-14 | 1987-07-14 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10788587U JPS6413119U (me) | 1987-07-14 | 1987-07-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6413119U true JPS6413119U (me) | 1989-01-24 |
Family
ID=31342704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10788587U Pending JPS6413119U (me) | 1987-07-14 | 1987-07-14 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6413119U (me) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09312268A (ja) * | 1996-05-23 | 1997-12-02 | Sharp Corp | プラズマ励起化学蒸着装置及びプラズマエッチング装置 |
| KR100687530B1 (ko) * | 1999-03-18 | 2007-02-27 | 에이에스엠 저펜 가부시기가이샤 | 플라즈마 ｃｖｄ 막 형성장치 |
| WO2008078508A1 (ja) * | 2006-12-26 | 2008-07-03 | Kyocera Corporation | プラズマ発生体及び反応装置 |
| JP2013044017A (ja) * | 2011-08-24 | 2013-03-04 | Fujifilm Corp | 成膜装置 |
| KR101339003B1 (ko) * | 2013-05-22 | 2013-12-10 | 플라텍(주) | 반도체웨이퍼 배선막 도금설비용 애노드 |
-
1987
- 1987-07-14 JP JP10788587U patent/JPS6413119U/ja active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09312268A (ja) * | 1996-05-23 | 1997-12-02 | Sharp Corp | プラズマ励起化学蒸着装置及びプラズマエッチング装置 |
| KR100687530B1 (ko) * | 1999-03-18 | 2007-02-27 | 에이에스엠 저펜 가부시기가이샤 | 플라즈마 ｃｖｄ 막 형성장치 |
| WO2008078508A1 (ja) * | 2006-12-26 | 2008-07-03 | Kyocera Corporation | プラズマ発生体及び反応装置 |
| JP5053292B2 (ja) * | 2006-12-26 | 2012-10-17 | 京セラ株式会社 | プラズマ発生体及び反応装置 |
| JP2013044017A (ja) * | 2011-08-24 | 2013-03-04 | Fujifilm Corp | 成膜装置 |
| KR101339003B1 (ko) * | 2013-05-22 | 2013-12-10 | 플라텍(주) | 반도체웨이퍼 배선막 도금설비용 애노드 |