JPS6412521A - Semiconductor manufacturing equipment - Google Patents

Semiconductor manufacturing equipment

Info

Publication number
JPS6412521A
JPS6412521A JP16935887A JP16935887A JPS6412521A JP S6412521 A JPS6412521 A JP S6412521A JP 16935887 A JP16935887 A JP 16935887A JP 16935887 A JP16935887 A JP 16935887A JP S6412521 A JPS6412521 A JP S6412521A
Authority
JP
Japan
Prior art keywords
gas
pollutants
microfilters
passing
remove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16935887A
Other languages
Japanese (ja)
Inventor
Tomoshi Kanazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP16935887A priority Critical patent/JPS6412521A/en
Publication of JPS6412521A publication Critical patent/JPS6412521A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To reduce any pollutants for improving the performance of a semiconductor device by a method wherein microfilters to remove the pollutants are added to the preceding stage to piping systems and a reaction chamber. CONSTITUTION:Nitrogen gas, hydrogen gas, silane gas and chlorine gas pass through respective pipings 1-4 to remove the pollutants such as particles, heavy metals, etc., contained in respective gasses by microfilters 6 while the specified flow rates are controlled for respective gasses by controllers 7. Furthermore, the nitrogen gas from the piping 4 passing through the filters 6 and the controller 7 and making arsenic trichloride solution 9 in a thermo-hygrostat 10 bubble is fed as a doping gas after passing through a microfilter 6b and immediately before it is led into a reaction chamber through the intermediary of another microfilter 6a.
JP16935887A 1987-07-07 1987-07-07 Semiconductor manufacturing equipment Pending JPS6412521A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16935887A JPS6412521A (en) 1987-07-07 1987-07-07 Semiconductor manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16935887A JPS6412521A (en) 1987-07-07 1987-07-07 Semiconductor manufacturing equipment

Publications (1)

Publication Number Publication Date
JPS6412521A true JPS6412521A (en) 1989-01-17

Family

ID=15885098

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16935887A Pending JPS6412521A (en) 1987-07-07 1987-07-07 Semiconductor manufacturing equipment

Country Status (1)

Country Link
JP (1) JPS6412521A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5766682A (en) * 1991-12-26 1998-06-16 Tsubouchi; Kazuo Process for chemical vapor deposition of a liquid raw material
US5853804A (en) * 1990-01-08 1998-12-29 Lsi Logic Corporation Gas control technique for limiting surging of gas into a CVD chamber

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5853804A (en) * 1990-01-08 1998-12-29 Lsi Logic Corporation Gas control technique for limiting surging of gas into a CVD chamber
US5914001A (en) * 1990-01-08 1999-06-22 Lsi Logic Corporation In-situ etch of CVD chamber
US6113699A (en) * 1990-01-08 2000-09-05 Lsi Logic Corporation Purging gas control structure for CVD chamber
US5766682A (en) * 1991-12-26 1998-06-16 Tsubouchi; Kazuo Process for chemical vapor deposition of a liquid raw material

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