JPS6412521A - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JPS6412521A JPS6412521A JP16935887A JP16935887A JPS6412521A JP S6412521 A JPS6412521 A JP S6412521A JP 16935887 A JP16935887 A JP 16935887A JP 16935887 A JP16935887 A JP 16935887A JP S6412521 A JPS6412521 A JP S6412521A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- pollutants
- microfilters
- passing
- remove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To reduce any pollutants for improving the performance of a semiconductor device by a method wherein microfilters to remove the pollutants are added to the preceding stage to piping systems and a reaction chamber. CONSTITUTION:Nitrogen gas, hydrogen gas, silane gas and chlorine gas pass through respective pipings 1-4 to remove the pollutants such as particles, heavy metals, etc., contained in respective gasses by microfilters 6 while the specified flow rates are controlled for respective gasses by controllers 7. Furthermore, the nitrogen gas from the piping 4 passing through the filters 6 and the controller 7 and making arsenic trichloride solution 9 in a thermo-hygrostat 10 bubble is fed as a doping gas after passing through a microfilter 6b and immediately before it is led into a reaction chamber through the intermediary of another microfilter 6a.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16935887A JPS6412521A (en) | 1987-07-07 | 1987-07-07 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16935887A JPS6412521A (en) | 1987-07-07 | 1987-07-07 | Semiconductor manufacturing equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6412521A true JPS6412521A (en) | 1989-01-17 |
Family
ID=15885098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16935887A Pending JPS6412521A (en) | 1987-07-07 | 1987-07-07 | Semiconductor manufacturing equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6412521A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5766682A (en) * | 1991-12-26 | 1998-06-16 | Tsubouchi; Kazuo | Process for chemical vapor deposition of a liquid raw material |
US5853804A (en) * | 1990-01-08 | 1998-12-29 | Lsi Logic Corporation | Gas control technique for limiting surging of gas into a CVD chamber |
-
1987
- 1987-07-07 JP JP16935887A patent/JPS6412521A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5853804A (en) * | 1990-01-08 | 1998-12-29 | Lsi Logic Corporation | Gas control technique for limiting surging of gas into a CVD chamber |
US5914001A (en) * | 1990-01-08 | 1999-06-22 | Lsi Logic Corporation | In-situ etch of CVD chamber |
US6113699A (en) * | 1990-01-08 | 2000-09-05 | Lsi Logic Corporation | Purging gas control structure for CVD chamber |
US5766682A (en) * | 1991-12-26 | 1998-06-16 | Tsubouchi; Kazuo | Process for chemical vapor deposition of a liquid raw material |
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