CN1751774A - Mfg. of equipment for purifying alkane gas - Google Patents
Mfg. of equipment for purifying alkane gas Download PDFInfo
- Publication number
- CN1751774A CN1751774A CN 200510093103 CN200510093103A CN1751774A CN 1751774 A CN1751774 A CN 1751774A CN 200510093103 CN200510093103 CN 200510093103 CN 200510093103 A CN200510093103 A CN 200510093103A CN 1751774 A CN1751774 A CN 1751774A
- Authority
- CN
- China
- Prior art keywords
- purity
- silane
- impurity
- arsine
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 150000001335 aliphatic alkanes Chemical class 0.000 title description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000007789 gas Substances 0.000 claims abstract description 24
- 239000012535 impurity Substances 0.000 claims abstract description 19
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims abstract description 17
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910000085 borane Inorganic materials 0.000 claims abstract description 16
- 229910000077 silane Inorganic materials 0.000 claims abstract description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 10
- 239000001301 oxygen Substances 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910001868 water Inorganic materials 0.000 claims abstract description 9
- 229910000846 In alloy Inorganic materials 0.000 claims abstract description 6
- 239000003463 adsorbent Substances 0.000 claims abstract description 6
- 238000001179 sorption measurement Methods 0.000 claims abstract 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 18
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims description 16
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 15
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 9
- 239000001569 carbon dioxide Substances 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 9
- 239000012776 electronic material Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 238000004458 analytical method Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000010998 test method Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 239000013543 active substance Substances 0.000 abstract 1
- FFBCLZHRHDRKFK-UHFFFAOYSA-N arsorane Chemical compound [AsH5] FFBCLZHRHDRKFK-UHFFFAOYSA-N 0.000 abstract 1
- 239000002994 raw material Substances 0.000 description 3
- 239000011149 active material Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
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- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
Abstract
An apparatus for purifying the ane-type gas features that a special active substance, which has strong adsorption function to the impurities (oxygen, water and CO2) in ane-type gas (arsorane, phosphorane, silane and borane) but no any chemical reaction to said ane-type gas, is added to Ga-In alloy. It is composed of the adsorbents, filter, valve, pipeline, jointer, flowmeter, vacuum pump and electric controller.
Description
The present invention relates to a kind of development of making high-purity alkanes gas cleaning device.Relate in particular to removing of the middle impurity trace oxygen of multiple special gas (special gases) such as a kind of arsine, phosphine, silane and borine, water and carbon dioxide.
The a large amount of multiple raw material such as use high-purity arsine, phosphine, silane and borine of the manufacturing of various chips in the electronics industry.Along with the raising of chip integration and precision, require purity of raw materials more and more higher.Present 99.999% (5N)
*Multiple special gas such as purity arsine, phosphine, silane and borine can not meet the demands.Multiple special gas such as the above highly purified arsine of 99.9999% (6N), phosphine, silane and borine have put on the agenda.The cleaning equipment of multiple special gas such as high-purity arsine, phosphine, silane and borine is the cleaning equipment of main purpose to remove objectionable impurities such as trace oxygen, water and carbon dioxide, does not relate to removing of other impurity in the multiple special gas such as arsine, phosphine, silane and borine.In order to remove other impurity in the multiple special gas such as arsine, phosphine, silane and borine, must cooperate methods such as other chemistry and physics.
*The definition of 99.999% (5N) is to the expression of chemical reagent, material purity on the physics.
Impurity has the branch of objectionable impurities and harmless impurity in the multiple special gas such as high-purity arsine, phosphine, silane and borine.In order to improve the purity of multiple special gas such as arsine, phosphine, silane and borine, objectionable impurities is separated from multiple special gas such as arsine, phosphine, silane and borine, the chemist wants to have use up all ways.This patent relates to and add certain sp act material in gallium-indium alloy, this active material has strong " absorption " to harmful trace impurity oxygen, water and carbon dioxide etc. in the multiple special gas such as arsine, phosphine, silane and borine, and the multiple gases such as arsine, phosphine, silane and borine of main body are not had any chemical reaction.With this active material is main means, cooperates other adsorbents, filter, valve, pipeline, joint, flowmeter and vavuum pump and electric (temperature and pressure) control etc. to be assembled into the purifier that is used for electronics industry.
The present invention compared with prior art has following characteristics:
1, in gallium-indium alloy, adds certain sp act material, objectionable impurities in the electronic materials such as energy deep removal oxygen, water and carbon dioxide, generally can reach 0.01PPM following (because the Sensitivity of Analytical Method restriction does not also have less than the 0.01PPM method of testing).
2, the gallium-indium alloy of scarvenger main body can use repeatedly, and be very long in theory service life except that chemical treatment is lost slightly.
3, cooperate the requirement of electronic material to purity, this purifier can add the adsorbent of other impurity removals in the multiple special gas such as arsine, phosphine, silane and borine.
4, cooperate the requirement of electronic material to purity, this cleaning equipment must additional particulates (particles) removes the filter of device.
5, in order to cooperate chip manufacturing, all adsorbents of this equipment, filter, valve, pipeline, joint, flowmeter, vavuum pump and electric (temperature and pressure) control etc. must meet chip manufacturing process and environment requirement.
Be used for finishing the device of objectionable impurities in the electronic materials such as multiple gases impurity oxygen, water and carbon dioxide such as above-mentioned manufacturing high-purity arsine, phosphine, silane and borine:
Fig. 1 is the cleaning equipment process chart, and is shown in Figure 1: this device is made up of raw material alkanes gas (1), flowmeter (2), scarvenger (3), filter (4), other scarvengers (5), vavuum pump (6) and system interface (7) etc.
Through the device of the present invention development to alkanes and other gases in the electronic materials such as oxygen, water and carbon dioxide the objectionable impurities purification effect see Table 1:
Table 1: high-purity alkanes gas cleaning device purifies dew point and oxygen analysis result in the gas of back:
*Compared impurity carbon dioxide result in the arsine before and after purifying again: before purifying＞500PPM; After purifying be＜0.1PPM.
Claims (5)
1, a kind of certain sp act material that in gallium-indium alloy, adds, objectionable impurities in the electronic materials such as energy deep removal oxygen, water and carbon dioxide, generally can reach 0.01PPM following (because the restriction of sensitivity of analytical method also not all possesses less than 0.01PPM impurity method of testing) method.It is characterized in that utilizing in the cleanser " activity " material to the characteristic of the strong adsorption of oxygen, water and carbon dioxide.
2, the gallium-indium alloy of scarvenger main body according to claim 1 is characterized in that and can use repeatedly, and be very long in theory service life except that chemical treatment is lost slightly.
3, scarvenger according to claim 1 cooperates electronic material other requirements to purity, and this cleaning equipment can add the adsorbent that removes other impurity in the multiple special gas such as arsine, phosphine, silane and borine.
4, according to claim 1,3 described scarvengers, cooperate the requirement of electronic material to purity, this cleaning equipment must additional particulates (particles) removes the filter of device.
5, according to claim 1,3 and 4 described, in order to cooperate chip manufacturing, all adsorbents of this equipment, filter, valve, pipeline, joint, flowmeter, vavuum pump and electric (temperature and pressure) control etc. must meet chip manufacturing process and environment requirement.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510093103 CN1751774A (en) | 2005-08-19 | 2005-08-19 | Mfg. of equipment for purifying alkane gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510093103 CN1751774A (en) | 2005-08-19 | 2005-08-19 | Mfg. of equipment for purifying alkane gas |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1751774A true CN1751774A (en) | 2006-03-29 |
Family
ID=36678849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510093103 Pending CN1751774A (en) | 2005-08-19 | 2005-08-19 | Mfg. of equipment for purifying alkane gas |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1751774A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101857270A (en) * | 2010-07-22 | 2010-10-13 | 武峰 | Method for synthesizing high-purity arsine |
| CN101380540B (en) * | 2008-10-09 | 2011-06-29 | 刘庚宇 | Gallium indium aluminum low congruent melting molten mass and use thereof in air purification |
| CN102374315A (en) * | 2010-08-23 | 2012-03-14 | 无锡华润上华半导体有限公司 | One-way control valve, vacuum device for chip manufacture procedure and gas recoil preventing method |
-
2005
- 2005-08-19 CN CN 200510093103 patent/CN1751774A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101380540B (en) * | 2008-10-09 | 2011-06-29 | 刘庚宇 | Gallium indium aluminum low congruent melting molten mass and use thereof in air purification |
| CN101857270A (en) * | 2010-07-22 | 2010-10-13 | 武峰 | Method for synthesizing high-purity arsine |
| CN102374315A (en) * | 2010-08-23 | 2012-03-14 | 无锡华润上华半导体有限公司 | One-way control valve, vacuum device for chip manufacture procedure and gas recoil preventing method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20060303 Address after: Room 16, building 375, 101 Bauhinia Road, Xiangzhou District, Guangdong, Zhuhai Applicant after: Zhao Xianhe Address before: Room eight, building 1115, 2 West Lane, Xuanwu District, Beijing, Niujie Applicant before: Weina Jietong Economic &. Trade Co., Ltd., Beijing |
|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |