JPS6412409A - Cross-linked polyethylene-insulated power cable having stainless steel sheath - Google Patents

Cross-linked polyethylene-insulated power cable having stainless steel sheath

Info

Publication number
JPS6412409A
JPS6412409A JP16826887A JP16826887A JPS6412409A JP S6412409 A JPS6412409 A JP S6412409A JP 16826887 A JP16826887 A JP 16826887A JP 16826887 A JP16826887 A JP 16826887A JP S6412409 A JPS6412409 A JP S6412409A
Authority
JP
Japan
Prior art keywords
layer
sheath
core
stainless steel
steel sheath
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16826887A
Other languages
Japanese (ja)
Inventor
Akio Chikada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP16826887A priority Critical patent/JPS6412409A/en
Publication of JPS6412409A publication Critical patent/JPS6412409A/en
Pending legal-status Critical Current

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  • Insulated Conductors (AREA)

Abstract

PURPOSE:To improve reliability without causing damage on a cable even if the amount of press-in at the time of forming is increased by arranging a semiconductor cushion layer between a metallic shield layer arranged on an insulation core and a corrugated stainless steel sheath located outside the shield layer. CONSTITUTION:Over a conductor 1 are arranged an inner semiconductive layer 2, a cross-linked polyethylene insulation layer 3 and an outer semiconductor layer 4 to form an insulation core A. Over the core A are arranged a metallic shield layer 5, a semiconductive cushion layer 6, a corrugated stainless steel sheath 7, and a corrosion prevention layer 8 of polyethylene. The cable formed in this way sustains less damage on the important parts such as the layer 5 and the core A even if the amount of press-in is increased at the time of corrugation forming of the sheath 7 because of the cushion effect of the layer 6 sandwiched between the sheath 5 and the layer 5. As a result, a gap g' within the cable can be made small. This makes the sheath and the core hard to be displaced from each other and reliability is improved.
JP16826887A 1987-07-06 1987-07-06 Cross-linked polyethylene-insulated power cable having stainless steel sheath Pending JPS6412409A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16826887A JPS6412409A (en) 1987-07-06 1987-07-06 Cross-linked polyethylene-insulated power cable having stainless steel sheath

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16826887A JPS6412409A (en) 1987-07-06 1987-07-06 Cross-linked polyethylene-insulated power cable having stainless steel sheath

Publications (1)

Publication Number Publication Date
JPS6412409A true JPS6412409A (en) 1989-01-17

Family

ID=15864867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16826887A Pending JPS6412409A (en) 1987-07-06 1987-07-06 Cross-linked polyethylene-insulated power cable having stainless steel sheath

Country Status (1)

Country Link
JP (1) JPS6412409A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6177302B1 (en) * 1990-11-09 2001-01-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor using multiple sputtering chambers
US10535448B2 (en) * 2017-12-21 2020-01-14 Nexans Stainless steel screen and non-insulating jacket arrangement for power cables

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6177302B1 (en) * 1990-11-09 2001-01-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor using multiple sputtering chambers
US10535448B2 (en) * 2017-12-21 2020-01-14 Nexans Stainless steel screen and non-insulating jacket arrangement for power cables

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