JPS641238A - Method and apparatus for introducing lattice defect - Google Patents
Method and apparatus for introducing lattice defectInfo
- Publication number
- JPS641238A JPS641238A JP15606187A JP15606187A JPS641238A JP S641238 A JPS641238 A JP S641238A JP 15606187 A JP15606187 A JP 15606187A JP 15606187 A JP15606187 A JP 15606187A JP S641238 A JPS641238 A JP S641238A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- back face
- particles
- nitrogen
- ice particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
PURPOSE: To eliminate the remainder of a contamination source by injecting ice particles having blast materials as nuclei to the back face of a semiconductor wafer, and forming a back side damage on the back face of the wafer.
CONSTITUTION: When nitrogen gas is bubbled by a nitrogen gas scattering tube 11 provided in a liquid nitrogen storage tank 14, the nitrogen is evaporated to generate chilled gas, which passes a meshlike body 6a, and the enters a chamber 1b. In the chamber 1b, water in which a blast material is mixed by a spray nozzle 2 is sprayed to be thermally exchanged with chilled gas, and iced to become coating ice particles 7. A semiconductor wafer 18 is conveyed by a belt conveyor 23 to a predetermined position, and coating ice particles 7 stayed on the body 6a are injected on the back face of the wafer 18. The injected particles 7 are collided to the back face of the wafer 19 to form a back side damage 21 on the back face of the wafer by the impact, thereby introducing a lattice defect. Thus, since the pulverized ice flies the blast material remaining on the back face of the wafer, contaminant particles do not remain on the back face of the wafer.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-156061A JPH011238A (en) | 1987-06-23 | Method and device for introducing lattice defects | |
DE3804694A DE3804694A1 (en) | 1987-06-23 | 1988-02-15 | METHOD FOR SURFACE PROCESSING FOR SEMICONDUCTOR WAFERS AND DEVICE FOR IMPLEMENTING THE METHOD |
DE3844648A DE3844648C2 (en) | 1987-06-23 | 1988-02-15 | |
DE3844649A DE3844649C2 (en) | 1987-06-23 | 1988-02-15 | |
US07/177,784 US4932168A (en) | 1987-06-23 | 1988-04-05 | Processing apparatus for semiconductor wafers |
US07/470,372 US5035750A (en) | 1987-06-23 | 1990-01-25 | Processing method for semiconductor wafers |
US07/470,226 US5025597A (en) | 1987-06-23 | 1990-01-25 | Processing apparatus for semiconductor wafers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-156061A JPH011238A (en) | 1987-06-23 | Method and device for introducing lattice defects |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS641238A true JPS641238A (en) | 1989-01-05 |
JPH011238A JPH011238A (en) | 1989-01-05 |
Family
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