JPS641238A - Method and apparatus for introducing lattice defect - Google Patents

Method and apparatus for introducing lattice defect

Info

Publication number
JPS641238A
JPS641238A JP15606187A JP15606187A JPS641238A JP S641238 A JPS641238 A JP S641238A JP 15606187 A JP15606187 A JP 15606187A JP 15606187 A JP15606187 A JP 15606187A JP S641238 A JPS641238 A JP S641238A
Authority
JP
Japan
Prior art keywords
wafer
back face
particles
nitrogen
ice particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15606187A
Other languages
Japanese (ja)
Other versions
JPH011238A (en
Inventor
Masuta Tada
Hayaaki Fukumoto
Toshiaki Omori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Sanso Co Ltd
Mitsubishi Electric Corp
Original Assignee
Taiyo Sanso Co Ltd
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Sanso Co Ltd, Mitsubishi Electric Corp filed Critical Taiyo Sanso Co Ltd
Priority to JP62-156061A priority Critical patent/JPH011238A/en
Priority claimed from JP62-156061A external-priority patent/JPH011238A/en
Priority to DE3804694A priority patent/DE3804694A1/en
Priority to DE3844648A priority patent/DE3844648C2/de
Priority to DE3844649A priority patent/DE3844649C2/de
Priority to US07/177,784 priority patent/US4932168A/en
Publication of JPS641238A publication Critical patent/JPS641238A/en
Publication of JPH011238A publication Critical patent/JPH011238A/en
Priority to US07/470,372 priority patent/US5035750A/en
Priority to US07/470,226 priority patent/US5025597A/en
Pending legal-status Critical Current

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  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE: To eliminate the remainder of a contamination source by injecting ice particles having blast materials as nuclei to the back face of a semiconductor wafer, and forming a back side damage on the back face of the wafer.
CONSTITUTION: When nitrogen gas is bubbled by a nitrogen gas scattering tube 11 provided in a liquid nitrogen storage tank 14, the nitrogen is evaporated to generate chilled gas, which passes a meshlike body 6a, and the enters a chamber 1b. In the chamber 1b, water in which a blast material is mixed by a spray nozzle 2 is sprayed to be thermally exchanged with chilled gas, and iced to become coating ice particles 7. A semiconductor wafer 18 is conveyed by a belt conveyor 23 to a predetermined position, and coating ice particles 7 stayed on the body 6a are injected on the back face of the wafer 18. The injected particles 7 are collided to the back face of the wafer 19 to form a back side damage 21 on the back face of the wafer by the impact, thereby introducing a lattice defect. Thus, since the pulverized ice flies the blast material remaining on the back face of the wafer, contaminant particles do not remain on the back face of the wafer.
COPYRIGHT: (C)1989,JPO&Japio
JP62-156061A 1987-06-23 1987-06-23 Method and device for introducing lattice defects Pending JPH011238A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP62-156061A JPH011238A (en) 1987-06-23 Method and device for introducing lattice defects
DE3804694A DE3804694A1 (en) 1987-06-23 1988-02-15 METHOD FOR SURFACE PROCESSING FOR SEMICONDUCTOR WAFERS AND DEVICE FOR IMPLEMENTING THE METHOD
DE3844648A DE3844648C2 (en) 1987-06-23 1988-02-15
DE3844649A DE3844649C2 (en) 1987-06-23 1988-02-15
US07/177,784 US4932168A (en) 1987-06-23 1988-04-05 Processing apparatus for semiconductor wafers
US07/470,372 US5035750A (en) 1987-06-23 1990-01-25 Processing method for semiconductor wafers
US07/470,226 US5025597A (en) 1987-06-23 1990-01-25 Processing apparatus for semiconductor wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62-156061A JPH011238A (en) 1987-06-23 Method and device for introducing lattice defects

Publications (2)

Publication Number Publication Date
JPS641238A true JPS641238A (en) 1989-01-05
JPH011238A JPH011238A (en) 1989-01-05

Family

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