JPS6411556U - - Google Patents
Info
- Publication number
- JPS6411556U JPS6411556U JP10478287U JP10478287U JPS6411556U JP S6411556 U JPS6411556 U JP S6411556U JP 10478287 U JP10478287 U JP 10478287U JP 10478287 U JP10478287 U JP 10478287U JP S6411556 U JPS6411556 U JP S6411556U
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- light
- photodiode
- receiving part
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10478287U JPS6411556U (US07655688-20100202-C00109.png) | 1987-07-08 | 1987-07-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10478287U JPS6411556U (US07655688-20100202-C00109.png) | 1987-07-08 | 1987-07-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6411556U true JPS6411556U (US07655688-20100202-C00109.png) | 1989-01-20 |
Family
ID=31336804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10478287U Pending JPS6411556U (US07655688-20100202-C00109.png) | 1987-07-08 | 1987-07-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6411556U (US07655688-20100202-C00109.png) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010140621A1 (ja) * | 2009-06-05 | 2010-12-09 | 浜松ホトニクス株式会社 | 半導体光検出素子及び半導体光検出素子の製造方法 |
| JP2011023417A (ja) * | 2009-07-13 | 2011-02-03 | Hamamatsu Photonics Kk | 半導体光検出素子及び半導体光検出素子の製造方法 |
| JP2011066316A (ja) * | 2009-09-18 | 2011-03-31 | Asahi Kasei Electronics Co Ltd | 光センサ |
| JP2011171486A (ja) * | 2010-02-18 | 2011-09-01 | Asahi Kasei Electronics Co Ltd | 赤外線センサ |
| WO2017150616A1 (ja) * | 2016-03-03 | 2017-09-08 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
| CN111989788A (zh) * | 2018-04-16 | 2020-11-24 | 浜松光子学株式会社 | 背面入射型半导体光检测元件 |
| CN111989785A (zh) * | 2018-04-16 | 2020-11-24 | 浜松光子学株式会社 | 背面入射型半导体光检测元件 |
| WO2022003896A1 (ja) * | 2020-07-02 | 2022-01-06 | 株式会社京都セミコンダクター | 端面入射型半導体受光素子及び端面入射型半導体受光素子の製造方法 |
-
1987
- 1987-07-08 JP JP10478287U patent/JPS6411556U/ja active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010140621A1 (ja) * | 2009-06-05 | 2010-12-09 | 浜松ホトニクス株式会社 | 半導体光検出素子及び半導体光検出素子の製造方法 |
| JP2010283223A (ja) * | 2009-06-05 | 2010-12-16 | Hamamatsu Photonics Kk | 半導体光検出素子及び半導体光検出素子の製造方法 |
| JP2011023417A (ja) * | 2009-07-13 | 2011-02-03 | Hamamatsu Photonics Kk | 半導体光検出素子及び半導体光検出素子の製造方法 |
| JP2011066316A (ja) * | 2009-09-18 | 2011-03-31 | Asahi Kasei Electronics Co Ltd | 光センサ |
| JP2011171486A (ja) * | 2010-02-18 | 2011-09-01 | Asahi Kasei Electronics Co Ltd | 赤外線センサ |
| JPWO2017150616A1 (ja) * | 2016-03-03 | 2018-12-27 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
| WO2017150616A1 (ja) * | 2016-03-03 | 2017-09-08 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
| US10529772B2 (en) | 2016-03-03 | 2020-01-07 | Hamamatsu Photonics K.K. | Semiconductor light detection element |
| US10930700B2 (en) | 2016-03-03 | 2021-02-23 | Hamamatsu Photonics K.K. | Semiconductor light detection element |
| CN111989788A (zh) * | 2018-04-16 | 2020-11-24 | 浜松光子学株式会社 | 背面入射型半导体光检测元件 |
| CN111989785A (zh) * | 2018-04-16 | 2020-11-24 | 浜松光子学株式会社 | 背面入射型半导体光检测元件 |
| JP2022174306A (ja) * | 2018-04-16 | 2022-11-22 | 浜松ホトニクス株式会社 | 裏面入射型半導体光検出素子 |
| US12021104B2 (en) | 2018-04-16 | 2024-06-25 | Hamamatsu Photonics K.K. | Back surface incident type semiconductor photo detection element |
| WO2022003896A1 (ja) * | 2020-07-02 | 2022-01-06 | 株式会社京都セミコンダクター | 端面入射型半導体受光素子及び端面入射型半導体受光素子の製造方法 |
