JPS6411350B2 - - Google Patents
Info
- Publication number
- JPS6411350B2 JPS6411350B2 JP4097580A JP4097580A JPS6411350B2 JP S6411350 B2 JPS6411350 B2 JP S6411350B2 JP 4097580 A JP4097580 A JP 4097580A JP 4097580 A JP4097580 A JP 4097580A JP S6411350 B2 JPS6411350 B2 JP S6411350B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- liquid composition
- ultraviolet irradiation
- film
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000203 mixture Substances 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 4
- 238000009835 boiling Methods 0.000 claims description 3
- 239000000178 monomer Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 11
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 6
- -1 epoxycyclohexane carboxylate Chemical class 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 239000003973 paint Substances 0.000 description 3
- STMDPCBYJCIZOD-UHFFFAOYSA-N 2-(2,4-dinitroanilino)-4-methylpentanoic acid Chemical compound CC(C)CC(C(O)=O)NC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O STMDPCBYJCIZOD-UHFFFAOYSA-N 0.000 description 2
- LEJBBGNFPAFPKQ-UHFFFAOYSA-N 2-(2-prop-2-enoyloxyethoxy)ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOC(=O)C=C LEJBBGNFPAFPKQ-UHFFFAOYSA-N 0.000 description 2
- OECTYKWYRCHAKR-UHFFFAOYSA-N 4-vinylcyclohexene dioxide Chemical compound C1OC1C1CC2OC2CC1 OECTYKWYRCHAKR-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- DXIJHCSGLOHNES-UHFFFAOYSA-N 3,3-dimethylbut-1-enylbenzene Chemical compound CC(C)(C)C=CC1=CC=CC=C1 DXIJHCSGLOHNES-UHFFFAOYSA-N 0.000 description 1
- JHWGFJBTMHEZME-UHFFFAOYSA-N 4-prop-2-enoyloxybutyl prop-2-enoate Chemical compound C=CC(=O)OCCCCOC(=O)C=C JHWGFJBTMHEZME-UHFFFAOYSA-N 0.000 description 1
- RBHIUNHSNSQJNG-UHFFFAOYSA-N 6-methyl-3-(2-methyloxiran-2-yl)-7-oxabicyclo[4.1.0]heptane Chemical compound C1CC2(C)OC2CC1C1(C)CO1 RBHIUNHSNSQJNG-UHFFFAOYSA-N 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical compound C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 description 1
- 244000028419 Styrax benzoin Species 0.000 description 1
- 235000000126 Styrax benzoin Nutrition 0.000 description 1
- 235000008411 Sumatra benzointree Nutrition 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- 229920006109 alicyclic polymer Polymers 0.000 description 1
- 229960002130 benzoin Drugs 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- OIWOHHBRDFKZNC-UHFFFAOYSA-N cyclohexyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1CCCCC1 OIWOHHBRDFKZNC-UHFFFAOYSA-N 0.000 description 1
- JBSLOWBPDRZSMB-FPLPWBNLSA-N dibutyl (z)-but-2-enedioate Chemical compound CCCCOC(=O)\C=C/C(=O)OCCCC JBSLOWBPDRZSMB-FPLPWBNLSA-N 0.000 description 1
- BQQUFAMSJAKLNB-UHFFFAOYSA-N dicyclopentadiene diepoxide Chemical compound C12C(C3OC33)CC3C2CC2C1O2 BQQUFAMSJAKLNB-UHFFFAOYSA-N 0.000 description 1
- 235000019382 gum benzoic Nutrition 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- FVSKHRXBFJPNKK-UHFFFAOYSA-N propionitrile Chemical compound CCC#N FVSKHRXBFJPNKK-UHFFFAOYSA-N 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Application Of Or Painting With Fluid Materials (AREA)
- Coating Apparatus (AREA)
Description
【発明の詳細な説明】
本発明は、樹脂薄膜パターンの形成方法に係
り、特に表面が光線反射性金属からなる基板上に
樹脂薄膜パターンを形成させ、その部分における
光の反射・干渉作用により干渉色からなるパター
ンを発現させるのに適した方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming a resin thin film pattern, and in particular, a resin thin film pattern is formed on a substrate whose surface is made of a light-reflecting metal, and interference is caused by light reflection and interference in that part. This invention relates to a method suitable for developing a pattern of colors.
従来、無機酸化物等を局所的に膜厚を変えて金
属面上に真空蒸着法により析出させ、干渉色を発
現させるラスター加工が知られているが、そのパ
ターン形成のための真空槽内のマスキングがとり
わけ長尺基板の連続処理において繁雑であつた。
このラスター加工またはこれに類似した透明薄膜
パターンを樹脂にて形成させる場合、印刷方式で
パターンを形成させることも可能ではあるが、薄
膜の厚さの制御が困難で所望の干渉色が得られ難
い。これに対し、基板全面にわたり一定厚さの塗
膜を形成させることは、一般の塗布技術により比
較的容易にできる。また干渉色が生じる程度の膜
厚約0.1〜0.5μの低分子液状組成物は、常温〜100
℃程度の温風により容易に蒸発する。これらのこ
とを考慮した結果、本発明が得られた。すなわ
ち、本発明は、紫外線照射により固化し得る、１
気圧での沸点が300℃以下のモノマーを主成分と
する低分子液状組成物からなる厚さ0.1〜0.5μの
薄膜を基板上に設け、上記薄膜に局部的に紫外線
を照射し、上記薄膜中の未反応低分子液状組成物
を蒸発させることを特徴とする樹脂薄膜パターン
の形成方法に関するもので、特に長尺基板を連続
的に処理する場合に適した方法に関するものであ
る。 Conventionally, raster processing has been known in which inorganic oxides are deposited on a metal surface by vacuum evaporation to locally change the film thickness to develop interference colors. Masking is particularly complicated in continuous processing of long substrates.
When forming this raster processing or a similar transparent thin film pattern using resin, it is possible to form the pattern using a printing method, but it is difficult to control the thickness of the thin film and it is difficult to obtain the desired interference color. . On the other hand, it is relatively easy to form a coating film with a constant thickness over the entire surface of the substrate using common coating techniques. In addition, low-molecular liquid compositions with a film thickness of about 0.1 to 0.5μ that cause interference colors can be heated at room temperature to 100μ
Easily evaporated by hot air at around ℃. As a result of considering these matters, the present invention was obtained. That is, the present invention provides 1, which can be solidified by ultraviolet irradiation.
A thin film with a thickness of 0.1 to 0.5 μ made of a low-molecular liquid composition whose main component is a monomer with a boiling point of 300°C or less at atmospheric pressure is provided on a substrate, and the thin film is locally irradiated with ultraviolet rays. The present invention relates to a method for forming a resin thin film pattern, which is characterized by evaporating an unreacted low-molecular liquid composition, and particularly relates to a method suitable for continuous processing of long substrates.
図面は本発明の方法を実施するための装置の概
略構成図で、図において、１は長尺基板、２はそ
の巻出部、３はその巻取部、４は基板１上にコー
ター５により塗布された低分子液状組成物、６は
紫外線ランプ７と可動マスク８とからなる局部紫
外線照射装置９により局部的に架橋した液状組成
物、１０は温風炉１１および第２の紫外線照射装
置１２により未反応低分子液状組成物を蒸発させ
たのち再度架橋を行なつて得られた樹脂薄膜パタ
ーンである。なお、温風炉で未反応物を完全に蒸
発除去すれば第２の紫外線照射を除くことができ
る。 The drawing is a schematic configuration diagram of an apparatus for carrying out the method of the present invention. The applied low-molecular liquid composition, 6 is a liquid composition that has been locally crosslinked by a local ultraviolet irradiation device 9 consisting of an ultraviolet lamp 7 and a movable mask 8, and 10 is a liquid composition that is locally crosslinked by a hot air oven 11 and a second ultraviolet irradiation device 12. This is a resin thin film pattern obtained by evaporating the unreacted low-molecular liquid composition and then crosslinking it again. Note that the second ultraviolet irradiation can be removed by completely evaporating and removing unreacted substances in a hot air oven.
本発明に使用する低分子液状組成物としては、
通常の紫外線硬化型塗料のうち、１気圧での沸点
が300℃以下のモノマーを主成分とするものが使
用でき、ラジカル重合型であれば、シクロヘキシ
ルメタクリレート、ｔ−ブチルスチレン、ジブチ
ルマレート等の単官能アクリレート類、１，４−
ブタンジオールジアクリレート、ジエチレングリ
コールジアクリレート、トリメチロールプロパン
トリアクリレート等の多官能アクリレート類の単
体あるいは混合体を主成分とし、これにベンゾイ
ンイソプソピルエーテル、ベンゾフエノン等の光
増感剤、その他の塗料用添加剤等を加えたものが
あり、イオン重合型であれば、ビニルシクロヘキ
センジオキシド、ジシクロペンタジエンジオキシ
ド、ジペンテンジオキシド、３−４エポキシシク
ロヘキシルメチル−３−４エポキシシクロヘキサ
ンカルボキシレート等の脂環式エポキシ類とアリ
ルグリシジルエーテル、フエニルグリシジルエー
テル等の他のエポキシ類と、紫外線照射により分
解してルイス酸を生じる硬化触媒、たとえばｐ−
ニトロベンゼンジアゾニウムヘキサフロロホスフ
エイト、２，４−ジクロロベンゼンジアゾニウム
テトラフルオロボレイト等と、アセトニトリル、
プロピオニトリル等の安定剤とからなる組成物に
必要に応じて各種塗料用添加剤を加えたものがあ
る。しかし、これらに限定されるものではなく、
温風で容易に蒸発し、紫外線照射で固化する性質
の液体であればすべて本発明に使用できる。 The low molecular weight liquid composition used in the present invention includes:
Among ordinary UV-curable paints, those whose main component is a monomer with a boiling point of 300°C or less at 1 atm can be used, and if it is a radical polymerization type, cyclohexyl methacrylate, t-butylstyrene, dibutyl maleate, etc. Monofunctional acrylates, 1,4-
The main component is polyfunctional acrylates such as butanediol diacrylate, diethylene glycol diacrylate, and trimethylolpropane triacrylate, either singly or as a mixture, along with photosensitizers such as benzoin isopyl ether and benzophenone, and other paints. Some contain additives, and if they are ionic polymerizable, they are alicyclic polymers such as vinylcyclohexene dioxide, dicyclopentadiene dioxide, dipentene dioxide, and 3-4 epoxycyclohexylmethyl-3-4 epoxycyclohexane carboxylate. Formula epoxies and other epoxies such as allyl glycidyl ether and phenyl glycidyl ether, and a curing catalyst that decomposes to form a Lewis acid upon UV irradiation, such as p-
Nitrobenzenediazonium hexafluorophosphate, 2,4-dichlorobenzenediazonium tetrafluoroborate, etc., and acetonitrile,
There are compositions consisting of a stabilizer such as propionitrile, to which various paint additives are added as necessary. However, it is not limited to these,
Any liquid that can be easily evaporated by hot air and solidified by ultraviolet irradiation can be used in the present invention.
次に本発明の具体的実施例について説明する。 Next, specific examples of the present invention will be described.
実施例
ポリエステルフイルム上に厚さ約500Åの金属
チタン薄膜を真空蒸着にて形成したものを基板と
し、その上に下記溶液を図面に示した装置を用い
て塗布一部分的紫外線照射−温風加熱−紫外線照
射を行なつた。Example A thin metallic titanium film with a thickness of about 500 Å was formed on a polyester film by vacuum evaporation as a substrate, and the following solution was coated on it using the equipment shown in the drawing, and partially irradiated with ultraviolet rays - heated with warm air - Ultraviolet irradiation was performed.
その結果、表面の長さ方向に１cm間隔で虹状の
すじ模様を有するフイルムが得られた。樹脂膜厚
は0.05μ〜0.3μであつた。 As a result, a film having a rainbow-like striped pattern at 1 cm intervals along the length of the surface was obtained. The resin film thickness was 0.05μ to 0.3μ.
なお、そのときの主要条件は下記のようであつ
た。 The main conditions at that time were as follows.
液組成｛ビニルシクロヘキセンジオキシド
……100重量部
アリルグリシジルエーテル
……10重量部
アセトニトリル …… 5重量部
ｐ−ニトロベンゼンジアゾニウムヘキ
サフロロフオスフエイト
…… 1重量部｝
塗布厚さ……（wet） ……0.5μ
速 度 ……20m／min
可動マスク…… 5mm幅のフイルム幅方向に平行な
スリツトを 5mm間隔に有するも
の。 Liquid composition {vinylcyclohexene dioxide
...100 parts by weight allyl glycidyl ether
...10 parts by weight acetonitrile ... 5 parts by weight p-nitrobenzenediazonium hexafluorophosphate
... 1 part by weight} Coating thickness ... (wet) ...0.5μ Speed ...20m/min Movable mask ... 5mm wide film with slits parallel to the width direction at 5mm intervals.
可動マスク速度……フイルムと同期20m／min
可動マスクとフイルムとの距離 …… 3mm
紫外線ランプ（80W／cm）とフイルムとの距離
……150mm
温風 温度 80℃
温風 風量 10m3／min
以上から明らかなように本発明の形成方法によ
れば、長尺物においても連続的に容易に干渉色パ
ターン等を生じさせる樹脂薄膜を得ることがで
き、その工業的価値は大きいものである。Movable mask speed: synchronized with film 20m/min Distance between movable mask and film: 3mm Distance between ultraviolet lamp (80W/cm) and film
……150mm Hot air Temperature: 80℃ Hot air Air flow: 10m 3 /min As is clear from the above, according to the forming method of the present invention, it is possible to form a thin resin film that easily produces interference color patterns continuously even on long objects. can be obtained, and its industrial value is great.
図面は本発明による樹脂薄膜パターンの形成方
法を実施するために使用する装置の一実施例の概
略構成図である。
１……基板、２……巻出部、３……巻取部、４
……低分子液状組成物、５……コーター、６……
架橋した液状組成物、７……紫外線ランプ、８…
…可動マスク、９……局部紫外線照射装置、１０
……樹脂薄膜パターン、１１……温風炉、１２…
…紫外線照射装置。
The drawing is a schematic diagram of an embodiment of an apparatus used to carry out the method of forming a resin thin film pattern according to the present invention. 1... Board, 2... Unwinding section, 3... Winding section, 4
...Low molecular liquid composition, 5...Coater, 6...
Crosslinked liquid composition, 7... Ultraviolet lamp, 8...
...Movable mask, 9...Local ultraviolet irradiation device, 10
...Resin thin film pattern, 11...Hot air stove, 12...
...Ultraviolet irradiation device.
Claims (1)
点が300℃以下のモノマーを主成分とする低分子
液状組成物からなる厚さ0.1〜0.5μの薄膜を基板
上に設け、上記薄膜に局部的に紫外線を照射し、
上記薄膜中の未反応低分子液状組成物を蒸発させ
ることを特徴とする樹脂薄膜パターンの形成方
法。1. A thin film with a thickness of 0.1 to 0.5 μ made of a low-molecular liquid composition mainly composed of a monomer with a boiling point of 300°C or less at 1 atm, which can be solidified by ultraviolet irradiation, is provided on a substrate, and a thin film is locally applied to the thin film. irradiate with ultraviolet rays,
A method for forming a resin thin film pattern, which comprises evaporating unreacted low-molecular liquid composition in the thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4097580A JPS56136677A (en) | 1980-03-28 | 1980-03-28 | Forming device for thin film pattern of resin |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4097580A JPS56136677A (en) | 1980-03-28 | 1980-03-28 | Forming device for thin film pattern of resin |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56136677A JPS56136677A (en) | 1981-10-26 |
| JPS6411350B2 true JPS6411350B2 (en) | 1989-02-23 |
Family
ID=12595439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4097580A Granted JPS56136677A (en) | 1980-03-28 | 1980-03-28 | Forming device for thin film pattern of resin |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56136677A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02301659A (en) * | 1989-05-15 | 1990-12-13 | Tomonobu Maeda | Magnetic processing device for fuel |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010120422A1 (en) * | 2009-04-15 | 2010-10-21 | 3M Innovative Properties Company | Process and apparatus for coating with reduced defects |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53139665A (en) * | 1977-05-12 | 1978-12-06 | Toppan Printing Co Ltd | Production of decorative material |
-
1980
- 1980-03-28 JP JP4097580A patent/JPS56136677A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02301659A (en) * | 1989-05-15 | 1990-12-13 | Tomonobu Maeda | Magnetic processing device for fuel |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56136677A (en) | 1981-10-26 |
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