JPS6410126B2 - - Google Patents
Info
- Publication number
- JPS6410126B2 JPS6410126B2 JP11159781A JP11159781A JPS6410126B2 JP S6410126 B2 JPS6410126 B2 JP S6410126B2 JP 11159781 A JP11159781 A JP 11159781A JP 11159781 A JP11159781 A JP 11159781A JP S6410126 B2 JPS6410126 B2 JP S6410126B2
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric
- electrode
- oscillator
- piezoelectric substrate
- dot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 39
- 230000010355 oscillation Effects 0.000 claims description 16
- 239000000919 ceramic Substances 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/56—Monolithic crystal filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/545—Filters comprising resonators of piezo-electric or electrostrictive material including active elements
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Description
【発明の詳細な説明】
本発明は拡がり振動モードで振動する圧電基板
を使用した圧電発振子に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a piezoelectric oscillator using a piezoelectric substrate that vibrates in a spreading vibration mode.
近年、集積回路（IC）や大規模集積回路
（LSI）の発展に伴つて、マイクロコンピユータ
が巾広い分野で使用されているが、マイクロコン
ピユータのクロツク源として、コイルとコンデン
サを使用したLC発振回路や抵抗とコンデンサを
使用したRC発振回路よりも発振周波数が安定で、
水晶振動子よりも安価な圧電磁器発振子が広く使
用されている。 In recent years, with the development of integrated circuits (ICs) and large-scale integrated circuits (LSIs), microcomputers are being used in a wide range of fields. The oscillation frequency is more stable than RC oscillation circuits using resistors and capacitors.
Piezoelectric ceramic oscillators, which are cheaper than crystal oscillators, are widely used.
ところで、最近では、マイクロコンピユータの
クロツク源は、応答速度や分解能を上げるためク
ロツク周波数の高いものが望まれ、例えば第１図
に示すように、入出力端子間に抵抗Ｒと圧電磁器
発振子１１とを並列に接続するとともに、入力端
子とアースとの間および出力端子とアースとの間
に夫々コンデンサCAおよびCBが接続されて発振
器を構成するＣ−MOSのインバータ１２の周波
数上限も2MHzないし3MHz程度にまで改良されて
いる。 By the way, in recent years, clock sources for microcomputers are desired to have a high clock frequency in order to increase response speed and resolution. For example, as shown in FIG. are connected in parallel, and capacitors C A and C B are connected between the input terminal and the ground, and between the output terminal and the ground, respectively, to form an oscillator. The frequency upper limit of the C-MOS inverter 12 is also 2MHz. It has been improved to about 3MHz.
Ｃ−MOSのインバータ１２の改良に伴い、圧
電磁器発振子１１も数100KHzから3MHz程度の発
振周波数を有するものが望まれているが、従来よ
り、次のおよびのような理由により、上記の
ような発振周波数帯の圧電磁器振動子１１を得る
のが困難であつた。 With the improvement of the C-MOS inverter 12, it is desired that the piezoelectric ceramic oscillator 11 has an oscillation frequency of several 100 KHz to about 3 MHz. It has been difficult to obtain a piezoelectric ceramic vibrator 11 with a certain oscillation frequency band.
圧電磁器振動子１１が圧電磁器基板の拡がり
振動を利用するものでは、発振周波数は圧電磁
器基板の寸法に反比例するため、数100KHzか
ら3MHzの周波数帯の発振子の場合、圧電磁器
基板の寸法が非常に小さくなり（発振周波数
800KHzで2.85mm×2.85mm）、圧電磁器基板の製
作と取扱いが困難で、量産が難しい。 If the piezoelectric ceramic resonator 11 uses the spreading vibration of the piezoelectric ceramic substrate, the oscillation frequency is inversely proportional to the dimensions of the piezoelectric ceramic substrate. becomes very small (oscillation frequency
2.85mm x 2.85mm at 800KHz), making and handling the piezoelectric ceramic substrate is difficult, making mass production difficult.
圧電磁器振動子１１が圧電磁器基板のエネル
ギー閉込め型厚み縦振動を利用するものでは、
発振周波数は圧電磁器基板の厚みに反比例し、
その振動を電極部近傍のみに閉じ込めるため
に、圧電磁器基板の寸法も大きくなるため、発
振周波数の下限は2.5MHz程度で、このとき、
基板厚みは898μｍで基板寸法は７mm×９mmと
なる。発振周波数を2.5MHzから引き下げるの
は圧電磁器基板が大きくなりすぎるため実用的
でない。 In the case where the piezoelectric ceramic vibrator 11 utilizes the energy-confined thickness longitudinal vibration of the piezoelectric ceramic substrate,
The oscillation frequency is inversely proportional to the thickness of the piezoelectric ceramic substrate,
In order to confine the vibration only to the vicinity of the electrode, the dimensions of the piezoelectric ceramic substrate also increase, so the lower limit of the oscillation frequency is about 2.5MHz, and at this time,
The substrate thickness is 898 μm and the substrate dimensions are 7 mm x 9 mm. Lowering the oscillation frequency from 2.5MHz is not practical because the piezoelectric ceramic substrate becomes too large.
本発明は従来の圧電発振子における上記事情に
鑑みてなされたものであつて、厚み方向に一様に
分極されて拡がり振動を行う圧電基板の一主面に
形成したドツト電極とリング電極を外部回路に接
続して上記圧電基板を奇数次高調波で発振させる
ことにより、圧電基板の寸法を大きくして圧電基
板の製造と取扱いを容易にし、数100KHzないし
3MHzの発振周波数帯においても量産性が非常に
高い圧電発振子を提供することを目的としてい
る。 The present invention has been made in view of the above-mentioned circumstances regarding conventional piezoelectric oscillators, and includes external dot electrodes and ring electrodes formed on one main surface of a piezoelectric substrate that is uniformly polarized in the thickness direction and spreads and vibrates. By connecting the piezoelectric substrate to a circuit and causing it to oscillate at odd-numbered harmonics, the dimensions of the piezoelectric substrate can be increased, making it easier to manufacture and handle the piezoelectric substrate, and increasing the frequency to several 100KHz or more.
The aim is to provide a piezoelectric oscillator that is highly mass-producible even in the 3MHz oscillation frequency band.
本発明のいま一つの目的は、厚み方向に一様に
分極されて拡がり振動を行う圧電基板の一主面に
形成したドツト電極とリング電極を外部回路に接
続するとともに他の主面に形成した全面電極をア
ースに接続して上記圧電基板を奇数次高調波で発
振させることにより、圧電基板の寸法を大きくし
て圧電基板の製造と取扱いを容易にし、数100K
Hzないし3MHzの発振周波帯においても量産性が
非常に高く、かつ、外付けのコンデンサを不要に
した圧電発振子を提供することである。 Another object of the present invention is to connect dot electrodes and ring electrodes formed on one main surface of a piezoelectric substrate that is uniformly polarized in the thickness direction and spread and vibrate to an external circuit, and to connect dot electrodes and ring electrodes formed on the other main surface. By connecting the entire surface electrode to ground and causing the piezoelectric substrate to oscillate with odd-numbered harmonics, the size of the piezoelectric substrate can be increased, making it easier to manufacture and handle the piezoelectric substrate, and making it possible to produce a piezoelectric substrate of several hundred kilometres.
It is an object of the present invention to provide a piezoelectric oscillator that is highly suitable for mass production even in the oscillation frequency band of Hz to 3MHz and that does not require an external capacitor.
以下、添付図面を参照して本発明を具体的に説
明する。 Hereinafter, the present invention will be specifically described with reference to the accompanying drawings.
第２図ａおよびｂに本発明に係る圧電発振子を
示す。 FIGS. 2a and 2b show a piezoelectric oscillator according to the present invention.
第２図ａにおいて、２１は一辺の長さがいずれ
もｌの正方形状を有する圧電発振子２０の圧電磁
器基板であつて、該圧電磁器基板２１の主面の中
央部には四角形状のドツト電極２２を形成すると
ともに、該ドツト電極２２を取り囲むように、四
角形状のリング電極２３を形成している。また、
上記圧電磁器基板２１の他方の主面の全面には、
第２図ｂに示すように、全面電極２４を形成して
いる。 In FIG. 2a, reference numeral 21 denotes a piezoelectric ceramic substrate of a piezoelectric oscillator 20 having a square shape with each side having a length l, and the piezoelectric ceramic substrate 21 has a square dot in the center of its principal surface. In addition to forming the electrode 22, a rectangular ring electrode 23 is formed to surround the dot electrode 22. Also,
On the entire other main surface of the piezoelectric ceramic substrate 21,
As shown in FIG. 2b, an electrode 24 is formed on the entire surface.
上記圧電磁器基板２１は、第３図に矢印A0で
示すように、その厚み方向に一様に分極させて拡
がり振動モードで動作させるとともに、該拡がり
振動モードの３次高調波を利用する。 The piezoelectric ceramic substrate 21 is polarized uniformly in the thickness direction as shown by arrow A0 in FIG. 3 to operate in a spreading vibration mode, and utilizes the third harmonic of the spreading vibration mode.
上記の３次高調波に対する圧電磁器基板２１の
歪分布を第３図の曲線ｈで示す。 The strain distribution of the piezoelectric ceramic substrate 21 with respect to the third harmonic is shown by the curve h in FIG.
上記曲線ｈで表される歪分布は、第２図ａの
−′線もしくは−′線断面図のものである。 The strain distribution represented by the above-mentioned curve h is that of the cross-sectional view taken along the line -' or -' in FIG. 2a.
上記の構成を有する圧電発振子は、第４図に示
すように、電極間容量C01、C02、C012、インダク
タンスL1、容量C1、抵抗R1およびｎ：１の変成
比を有する変成器２５からなる周知の等価回路を
有する。 As shown in FIG. 4, the piezoelectric oscillator having the above configuration has interelectrode capacitances C 01 , C 02 , C 012 , inductance L 1 , capacitance C 1 , resistance R 1 and a transformation ratio of n:1. It has a well-known equivalent circuit consisting of a transformer 25.
上記の圧電発振子２０を３次高調波２端子型の
発振子として使用する場合は、第５図に示すよう
に、第１図の圧電磁器発振器１１に代えて、上記
圧電発振子２０のドツト電極２２およびリング電
極２３をＣ−MOSのインバータ１２の入力端子
および出力端子に夫々接続すればよい。 When the piezoelectric oscillator 20 described above is used as a third harmonic two-terminal type oscillator, as shown in FIG. 5, the piezoelectric oscillator 20 shown in FIG. The electrode 22 and the ring electrode 23 may be connected to the input terminal and output terminal of the C-MOS inverter 12, respectively.
また、上記圧電発振子を３次高調波３端子型の
発振子として使用する場合は、第６図に示すよう
に、第１図の圧電磁器発振子１１に代えて、上記
圧電発振子２０のドツト電極２２およびリング電
極２３をＣ−MOSのインバータ１２の入力端子
および出力端子に夫々接続する一方、全面電極２
４をアースに接続すればよく、この場合は、ドツ
ト電極２２と全面電極２４との間の容量およびド
ツト電極２３と全面電極２４との間の容量によ
り、第１図のコンデンサCAおよびCBは省略する
ことができる。 Furthermore, when the piezoelectric oscillator is used as a third-order harmonic three-terminal type oscillator, as shown in FIG. The dot electrode 22 and the ring electrode 23 are connected to the input terminal and output terminal of the C-MOS inverter 12, respectively, while the whole surface electrode 2
In this case, capacitors C A and C B in FIG. can be omitted.
なお、第５図および第６図において、圧電発振
子２０のドツト電極２２およびリング電極２３
は、インバータ１２の出力端子および入力端子に
夫々接続するようにしてもよい。 In addition, in FIGS. 5 and 6, the dot electrode 22 and ring electrode 23 of the piezoelectric oscillator 20
may be connected to the output terminal and input terminal of the inverter 12, respectively.
上記のような圧電発振子では、圧電磁器基板２
１の拡がり振動モードの３次高調波を利用してい
るため、圧電磁器基板２１は拡がり振動モードの
基本波を利用するものに比較して、寸法が３倍と
なり、取扱が非常に容易で製造も従来の他の圧電
発振子の設備を流用することができ、非常に好都
合である。 In the piezoelectric oscillator as described above, the piezoelectric ceramic substrate 2
Since the piezoelectric ceramic substrate 21 uses the third harmonic of the spreading vibration mode of 1, the size is three times that of one that uses the fundamental wave of the spreading vibration mode, making it extremely easy to handle and manufacture. It is also possible to use other conventional piezoelectric oscillator equipment, which is very convenient.
ちなみに、1.5MHzの圧電発振子２０では、圧
電磁器基板２１の寸法は、ｌ＝4.45mmで厚さｔ
は、ｔ＝0.4mmとなる。 By the way, in the piezoelectric oscillator 20 of 1.5MHz, the dimensions of the piezoelectric ceramic substrate 21 are l=4.45mm and thickness t.
becomes t=0.4mm.
また、第６図に示すように、圧電発振子２０を
３次高調波３端子型の発振子として使用すれば、
外付けのコンデンサCA，CBも省略できる。 Furthermore, as shown in FIG. 6, if the piezoelectric oscillator 20 is used as a third harmonic three-terminal type oscillator,
External capacitors C A and C B can also be omitted.
本発明は圧電磁器基板２１を使用するものに限
らず、他の圧電基板を使用する圧電発振子に広く
適用することができる。 The present invention is not limited to those using the piezoelectric ceramic substrate 21, but can be widely applied to piezoelectric oscillators using other piezoelectric substrates.
以上、詳細に説明したことからも明らかなよう
に、本発明は、厚み方向に一様に分極されて拡が
り振動を行う圧電基板の振動の奇数次高調波を利
用して発振子を構成するようにしたから、数
100KHzないし3MHz程度の発振周波数帯の圧電発
振子においても圧電基板の寸法も生産に好適な寸
法とすることができ、量産が非常に容易となる。 As is clear from the detailed explanation above, the present invention is directed to constructing an oscillator using odd-numbered harmonics of the vibration of a piezoelectric substrate that is uniformly polarized in the thickness direction and causes spreading vibration. , so the number
Even in a piezoelectric oscillator with an oscillation frequency band of about 100 KHz to 3 MHz, the dimensions of the piezoelectric substrate can be made suitable for production, making mass production very easy.
また、本発明に係る圧電発振子の全面電極をア
ースに接続して３端子型の発振子として使用すれ
ば、上記の全面電極に対するドツト電極およびリ
ング電極の容量により、外寸のコンデンサも不要
になる。 Furthermore, if the entire surface electrode of the piezoelectric oscillator according to the present invention is connected to ground and used as a three-terminal type oscillator, an external capacitor is not required due to the capacitance of the dot electrode and ring electrode relative to the above-mentioned surface electrode. Become.
第１図は従来の圧電発振子を使用した発振回路
の回路図、第２図ａおよびｂは夫々本発明に係る
圧電発振子の平面図および底面図、第３図は３次
高調波の歪分布と３次高調波を利用した圧電発振
子の断面図、第４図は第２図ａおよびｂに示す圧
電発振子の等価回路図、第５図は第２図ａおよび
ｂに示す圧電発振子を２端子型の圧電発振子とし
て使用した発振器の回路図、第６図は第２図ａお
よびｂに示す圧電発振子を３端子型の圧電発振子
として使用した発振器の回路図である。
１２……インバータ、２０……圧電発振子、２
１……圧電磁器基板、２２……ドツト電極、２３
……リング電極、２４……全面電極。
Fig. 1 is a circuit diagram of an oscillation circuit using a conventional piezoelectric oscillator, Fig. 2 a and b are a plan view and a bottom view, respectively, of a piezoelectric oscillator according to the present invention, and Fig. 3 is a distortion of the third harmonic. A cross-sectional view of a piezoelectric oscillator using distribution and third harmonics, Figure 4 is an equivalent circuit diagram of the piezoelectric oscillator shown in Figures 2 a and b, and Figure 5 is a piezoelectric oscillation diagram shown in Figures 2 a and b. FIG. 6 is a circuit diagram of an oscillator using the piezoelectric oscillator shown in FIGS. 2a and 2b as a three-terminal piezoelectric oscillator. 12... Inverter, 20... Piezoelectric oscillator, 2
1... Piezoelectric ceramic substrate, 22... Dot electrode, 23
...Ring electrode, 24...Full surface electrode.
Claims (1)
なう方形の圧電基板の一主面に同心角状に四角形
状のドツト電極と該ドツト電極を取り囲むリング
電極を形成する一方、上記圧電基板の他の主面に
全面電極を形成し、上記ドツト電極とリング電極
を外部回路に接続して上記圧電基板の拡がり振動
の奇数次高調波で発振させるようにしたことを特
徴とする圧電発振子。 ２ 厚み方向に一様に分極されて拡がり振動を行
なう方形の圧電基板の一主面に同心角状に四角形
状のドツト電極と該ドツト電極を取り囲むリング
電極を形成する一方、上記圧電基板の他の主面に
全面電極を形成し、上記ドツト電極とリング電極
を外部回路に接続するとともに上記全面電極をア
ースに接続して上記圧電基板の拡がり振動の奇数
次高調波で発振させるようにしたことを特徴とす
る圧電発振子。[Scope of Claims] 1. A rectangular dot electrode and a ring electrode surrounding the dot electrode are formed concentrically on one main surface of a rectangular piezoelectric substrate that is polarized uniformly in the thickness direction and spreads and vibrates. , a full-surface electrode is formed on the other main surface of the piezoelectric substrate, and the dot electrode and ring electrode are connected to an external circuit to cause oscillation at odd harmonics of the spreading vibration of the piezoelectric substrate. piezoelectric oscillator. 2. A rectangular dot electrode and a ring electrode surrounding the dot electrode are formed concentrically on one principal surface of a rectangular piezoelectric substrate that is uniformly polarized in the thickness direction and performs spreading vibration, while other parts of the piezoelectric substrate are formed. A full-surface electrode is formed on the main surface of the piezoelectric substrate, the dot electrode and the ring electrode are connected to an external circuit, and the full-surface electrode is connected to ground to cause oscillation with odd harmonics of the spreading vibration of the piezoelectric substrate. A piezoelectric oscillator featuring
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11159781A JPS5813010A (en) | 1981-07-16 | 1981-07-16 | Piezoelectric oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11159781A JPS5813010A (en) | 1981-07-16 | 1981-07-16 | Piezoelectric oscillator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5813010A JPS5813010A (en) | 1983-01-25 |
| JPS6410126B2 true JPS6410126B2 (en) | 1989-02-21 |
Family
ID=14565383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11159781A Granted JPS5813010A (en) | 1981-07-16 | 1981-07-16 | Piezoelectric oscillator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5813010A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62207018A (en) * | 1986-03-07 | 1987-09-11 | Murata Mfg Co Ltd | Three terminal type piezoelectric resonator |
| JPS63234707A (en) * | 1987-03-24 | 1988-09-30 | Ngk Spark Plug Co Ltd | Piezoelectric ceramic resonator |
| US5235240A (en) * | 1990-05-25 | 1993-08-10 | Toyo Communication Equipment Co., Ltd. | Electrodes and their lead structures of an ultrathin piezoelectric resonator |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5595417A (en) * | 1979-01-11 | 1980-07-19 | Noto Denshi Kogyo Kk | Piezoelectric oscillating element and piezoelectric oscillator using it |
-
1981
- 1981-07-16 JP JP11159781A patent/JPS5813010A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5813010A (en) | 1983-01-25 |
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