JPS6398501U - - Google Patents
Info
- Publication number
- JPS6398501U JPS6398501U JP19324986U JP19324986U JPS6398501U JP S6398501 U JPS6398501 U JP S6398501U JP 19324986 U JP19324986 U JP 19324986U JP 19324986 U JP19324986 U JP 19324986U JP S6398501 U JPS6398501 U JP S6398501U
- Authority
- JP
- Japan
- Prior art keywords
- prism
- inclined surface
- single crystal
- view
- perspective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003776 cleavage reaction Methods 0.000 claims description 4
- 230000007017 scission Effects 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Landscapes
- Optical Elements Other Than Lenses (AREA)
Description
第１図乃び第２図は本考案プリズムの一つの実
施例を説明するためのもので、第１図はプリズム
斜視図、第２図Ａ乃至Ｃは第１図に示したプリズ
ムの製造方法の一例を工程順に示す斜視図、第３
図Ａ、Ｂは劈開ミスが生じにくくなるようにした
別の製造方法の各別の例を示す斜視図、第４図は
劈開ミスを説明するための斜視図、第５図乃至第
８図は背景技術を説明するためのもので、第５図
及び第６図はプリズムが用いられた光学装置を示
し、第５図が断面図、第６図が回路図、第７図、
第８図はプリズムの傾斜面を異方性エツチングに
より形成する形成方法を説明するためのもので、
第７図が断面図、第８図が異方性エツチング後の
状態を示す斜視図である。
符号の説明、１……プリズム、２……一主面、
４……傾斜面（劈開面）。
1 and 2 are for explaining one embodiment of the prism of the present invention, FIG. 1 is a perspective view of the prism, and FIGS. 2A to 2C are methods for manufacturing the prism shown in FIG. 1. A third perspective view showing an example of the steps in the order of steps.
Figures A and B are perspective views showing different examples of different manufacturing methods in which cleavage errors are less likely to occur, Figure 4 is a perspective view for explaining cleavage errors, and Figures 5 to 8 are 5 and 6 show an optical device using a prism, FIG. 5 is a sectional view, FIG. 6 is a circuit diagram, FIG.
FIG. 8 is for explaining the method of forming the inclined surface of the prism by anisotropic etching.
FIG. 7 is a sectional view, and FIG. 8 is a perspective view showing the state after anisotropic etching. Explanation of symbols, 1...prism, 2...one principal surface,
4... Inclined plane (cleavage plane).
Claims (1)
角度を成す傾斜面を有するプリズムにおいて、 上記傾斜面が上記単結晶体の劈開面である ことを特徴とするプリズム。[Claims for Utility Model Registration] A prism made of a flat single crystal and having an inclined surface forming a predetermined angle with respect to one principal surface, characterized in that the inclined surface is a cleavage plane of the single crystal. prism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19324986U JPS6398501U (en) | 1986-12-16 | 1986-12-16 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19324986U JPS6398501U (en) | 1986-12-16 | 1986-12-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6398501U true JPS6398501U (en) | 1988-06-25 |
Family
ID=31149098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19324986U Pending JPS6398501U (en) | 1986-12-16 | 1986-12-16 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6398501U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10320144B2 (en) | 2015-08-25 | 2019-06-11 | Nichi Corporation | Method for manufacturing an optical member and method for manufacturing a semiconductor laser device |
-
1986
- 1986-12-16 JP JP19324986U patent/JPS6398501U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10320144B2 (en) | 2015-08-25 | 2019-06-11 | Nichi Corporation | Method for manufacturing an optical member and method for manufacturing a semiconductor laser device |
| US10594107B2 (en) | 2015-08-25 | 2020-03-17 | Nichia Corporation | Semiconductor laser device |
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