JPS6396945A - High-power semiconductor device - Google Patents
High-power semiconductor deviceInfo
- Publication number
- JPS6396945A JPS6396945A JP61243523A JP24352386A JPS6396945A JP S6396945 A JPS6396945 A JP S6396945A JP 61243523 A JP61243523 A JP 61243523A JP 24352386 A JP24352386 A JP 24352386A JP S6396945 A JPS6396945 A JP S6396945A
- Authority
- JP
- Japan
- Prior art keywords
- heat
- liquid
- storage chamber
- element storage
- filled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 239000007788 liquid Substances 0.000 claims abstract description 40
- 238000007789 sealing Methods 0.000 claims abstract description 16
- 230000017525 heat dissipation Effects 0.000 claims description 22
- 229920001296 polysiloxane Polymers 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 6
- 230000008602 contraction Effects 0.000 abstract description 3
- 230000006866 deterioration Effects 0.000 abstract description 2
- 238000009434 installation Methods 0.000 abstract 2
- 230000032683 aging Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 230000035882 stress Effects 0.000 description 5
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 4
- 239000012528 membrane Substances 0.000 description 3
- 229920002379 silicone rubber Polymers 0.000 description 3
- 239000004945 silicone rubber Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/15165—Monolayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は、例えばパワートランジスタの発生する熱が
効果的に放出されるるように改良した、大電力用の半導
体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device for high power use, which is improved so that heat generated by, for example, a power transistor is effectively dissipated.
【従来の技術］
例えば、パワートランジスタ等にあっては、このトラン
ジスタで発生される熱を放熱処理するために、上記トラ
ンジスタのチップから発生された熱が、ヒートシンク、
絶縁板、さらに放熱ケースに伝達されるように構成して
いる。しかし、大きな熱が繰返して与えられると、冷熱
ストレスによって上記各構成部品の接合部の熱抵抗が上
昇するようなる。すなわち、結果として放熱特性が著し
く低下されるようになり、パワートランジスタチップが
過熱状態とされるようになるものである。[Prior Art] For example, in the case of a power transistor, etc., in order to dissipate the heat generated by the transistor, the heat generated from the transistor chip is transferred to a heat sink,
The structure is such that the heat is transmitted to the insulating plate and further to the heat dissipation case. However, when large amounts of heat are repeatedly applied, the thermal resistance of the joints of the above-mentioned components increases due to thermal stress. That is, as a result, the heat dissipation characteristics are significantly deteriorated, and the power transistor chip becomes overheated.
［発明が解決しようとする問題点］
この発明は上記のような点に鑑みなされたもので、パワ
ートランジスタ等の大電力で使用される□半導体素子に
おいて、動作中に発生される熱を効果的に放熱処理でき
るようにすると共に、特に冷熱の状態が繰返されて、そ
のストレスによって構成部品の接合部の熱抵抗が上昇し
ても、放熱が効率的に行われ、半導体素子の信頼性が向
上されるようにする大電力用の半導体装置を提供しよう
とするものである。[Problems to be Solved by the Invention] This invention has been made in view of the above points. In addition to enabling heat dissipation treatment, the reliability of semiconductor devices is improved by efficiently dissipating heat even when the thermal resistance of the joints of component parts increases due to the stress caused by repeated cold and hot conditions. It is an object of the present invention to provide a high-power semiconductor device that allows for high power consumption.
［問題点を解決するための手段］
すなわち、この発明に係る大電力用半導体装置にあって
は、半導体素子を放熱ケースに形成される素子収納室に
設定すると共に、上記素子収納室に熱伝導性良好な、例
えばフロロカーボンのような液体を充填し、上記素子収
納室の開口部は伸縮性の設定される封止手段によって封
止するようにしているものである。[Means for Solving the Problems] That is, in the high-power semiconductor device according to the present invention, a semiconductor element is set in an element storage chamber formed in a heat dissipation case, and a heat conduction layer is provided in the element storage chamber. The opening of the element storage chamber is filled with a liquid having good properties, such as fluorocarbon, and the opening of the element storage chamber is sealed with elastic sealing means.
［作用］
上記のような大電力用半導体装置にあっては、半導体素
子で発生された熱は直接的に放熱ケースに伝達されると
共に、上記素子収納室に充填される液体を介しても放熱
ケースに伝達され、効果的に放熱さ、れるようになる。[Function] In the above-mentioned high-power semiconductor device, the heat generated by the semiconductor element is not only directly transmitted to the heat dissipation case, but also dissipated through the liquid filled in the element storage chamber. The heat is transferred to the case and effectively dissipated.
また、半導体素子の発熱によって上記充填液体が加熱さ
れ、膨張するようになった場合には、封止手段の伸縮性
によってその膨張分が効果的に吸収され、冷熱の繰返し
によって上記液体が漏れることがなく、放熱効果の経年
変化のない信頼性の高い半導体装置とすることができる
。Furthermore, if the filling liquid is heated and expanded due to the heat generated by the semiconductor element, the elasticity of the sealing means will effectively absorb the expansion, and the liquid will not leak due to repeated cooling and heating. Therefore, it is possible to obtain a highly reliable semiconductor device in which the heat dissipation effect does not change over time.
［発明の実施例］ 以下、図面を参照してこの発明の一実施例を説明する。[Embodiments of the invention] Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第１図はその構成を示しているもので、熱伝導性の良好
な金属材料によって構成された放熱ケース１１を備える
。この放熱ケース１１は、特に図示していないが適宜フ
ィンの形成された放熱部材に一体的に結合されるように
なるもので、この放熱ケース１１には上方を開口した素
子収納室Ｉ２が形成されている。この素子収納室１２に
は、パワートランジスタ等の半導体チップ１３が収納設
定されるもので、この半導体チップ１３はヒートシンク
１４に半田付けによって取付は設定され、さらにこのヒ
ートシンク１４は電気的な絶縁板１５に接着固定されて
いるもので、この絶縁板１５が素子収納室１２の底部分
に接着固定されるようになっている。FIG. 1 shows its configuration, which includes a heat dissipation case 11 made of a metal material with good thermal conductivity. Although not particularly shown, the heat dissipation case 11 is integrally connected to a heat dissipation member formed with appropriate fins, and the heat dissipation case 11 has an element storage chamber I2 opened at the top. ing. A semiconductor chip 13 such as a power transistor is housed in the element storage chamber 12. The semiconductor chip 13 is attached to a heat sink 14 by soldering, and the heat sink 14 is attached to an electrically insulating plate 15. This insulating plate 15 is adhesively fixed to the bottom portion of the element storage chamber 12.
上記半導体チップ１３の収納される素子収納室１２には
、上記チップ１３の収納設定された状態で、例えばフロ
ロカーボン（商品名；フロリナート）のような、沸点が
高く且つ電気絶縁性の熱伝導性の良好な液体１Ｂが充填
設定される。In the element storage chamber 12 in which the semiconductor chip 13 is stored, a material such as fluorocarbon (trade name: Fluorinert), which has a high boiling point and is electrically insulating and thermally conductive, is used. Good liquid 1B is filled and set.
上記放熱ケース１１には、上記素子収納室１２に隣接す
る状態で回路室１７が形成され、また上記素子収納室１
２および回路室１７共通に含む状態で封止室１８が形成
される。そして、上記回路室１７の底部分には、例えば
シリコンゴム等の接着材１９によって厚膜基板２０が接
着され、この厚膜基板２０に形成した端子２１と上記半
導体チップ１３とは、素子収納室Ｉ２と回路室Ｉ７とを
区画する壁を越えて、ワイヤ２２によって接続される。A circuit chamber 17 is formed in the heat dissipation case 11 adjacent to the element storage chamber 12, and a circuit chamber 17 is formed adjacent to the element storage chamber 12.
2 and the circuit chamber 17 are commonly included in the sealed chamber 18. A thick film substrate 20 is bonded to the bottom of the circuit chamber 17 with an adhesive 19 such as silicone rubber, and the terminals 21 formed on the thick film substrate 20 and the semiconductor chip 13 are connected to the element storage chamber. The connection is made by a wire 22 across the wall that partitions I2 and circuit room I7.
そして、上記回路室１７をも含む状態で、素子収納室１
２に充填される液体１Ｂを封するようにして、封止室１
８にシリコーンゲル２３を充填するものであり、上記封
止室１８は蓋２４で通気性をもったまま封するようにし
ているものである。Then, the element storage chamber 1 includes the circuit chamber 17 as well.
The sealing chamber 1 is sealed so as to seal the liquid 1B filled in the sealing chamber 1.
8 is filled with silicone gel 23, and the sealed chamber 18 is sealed with a lid 24 while maintaining air permeability.
ここで、上記素子収納室１２の上記シリコーンゲル２３
の設定される開口部の周囲、ざらに封止室１８の開口部
周囲には、適宜複数の段２５１．２５２が形成されてい
るものであり、上記シリコーンゲル２３と素子収納室１
２の開口部周囲部分との接触面積を可及的に大きくし、
収納室１２に充填された液体１６がより確実に封止設定
されるようにしている。Here, the silicone gel 23 in the element storage chamber 12
A plurality of steps 251 and 252 are appropriately formed around the opening where the sealing chamber 18 is set, and the silicone gel 23 and the element storage chamber 1 are connected to each other.
The contact area with the surrounding area of the opening of No. 2 is made as large as possible,
The liquid 16 filled in the storage chamber 12 is sealed more reliably.
すなわち、上記のように構成される半導体装置において
、大電力用のパワートランジスタ等でなる半導体チップ
１３が動作状態にあり発熱すると、この熱はヒートシン
ク１４、絶縁板１５を介して放熱ケース１１に伝達され
、外部に放出される。また、このチップ１３で発生した
熱は、このチップ１３の表面からと共に、ヒートシンク
１４、絶縁板１５の表面から、素子収納室１２に充填し
た液体１６に放出されるようになり、半導体チップ１３
の温度上昇は、効果的に抑制されるようになる。That is, in the semiconductor device configured as described above, when the semiconductor chip 13 consisting of a high-power power transistor or the like is in an operating state and generates heat, this heat is transferred to the heat dissipation case 11 via the heat sink 14 and the insulating plate 15. and released to the outside. In addition, the heat generated in the chip 13 is released from the surface of the chip 13 as well as from the surfaces of the heat sink 14 and the insulating plate 15 to the liquid 16 filled in the element storage chamber 12.
temperature rise will be effectively suppressed.
このようにして半導体チップ１３が発熱すると、素子収
納室Ｉ２に充填された液体１６の温度も上昇し、熱膨張
によってこの液体１６の容積が増大する。When the semiconductor chip 13 generates heat in this manner, the temperature of the liquid 16 filled in the element storage chamber I2 also rises, and the volume of the liquid 16 increases due to thermal expansion.
このように充填液体１６の容積が増大すると、もしこの
素子収納室１２の開口部が蓋体によって密封されている
場合は、その膨張力に対応した応力が液を密封している
部分に加わり、機械的なストレスが作用するようになる
。When the volume of the filling liquid 16 increases in this way, if the opening of the element storage chamber 12 is sealed with a lid, stress corresponding to the expansion force will be applied to the part that seals the liquid. Mechanical stress comes into play.
しかし、上記素子収納室Ｉ２の開口部は、柔軟性で且つ
伸縮性に富むようになるシリコーンゲル２３によって封
じられている。したがって、充填液体１６の熱膨張分は
、上記シリコーンゲル２３の変形によって吸収されるよ
うになり、封止部分に対して応力が作用して空間ができ
、漏れるようなことはない。However, the opening of the element storage chamber I2 is sealed with a silicone gel 23 that is flexible and highly elastic. Therefore, the thermal expansion of the filling liquid 16 is absorbed by the deformation of the silicone gel 23, and stress acts on the sealing portion to create a space and prevent leakage.
この場合、伸縮性に富む封止体となるシリコーンゲル２
３は、放熱ケース１１との密着性の高いものであり、且
つこのシリコーンゲル２３は段２５１で素子収納室１２
の開口部に充分な幅をもって接触されるようになってい
る。このため、充填液体１Ｂが膨張するような状態とな
っても、シリコーンゲル２３と段２５１部の接触封止状
態は確実に保持されるようになり、充填液体１Ｂが素子
収納室１２の開口部から溢れ出るようなことはない。そ
して、さらに沿面からの水分の侵入も確実に阻止できる
ようになっているものである。In this case, a silicone gel 2 that becomes a highly elastic sealing body is used.
3 has high adhesion to the heat dissipation case 11, and this silicone gel 23 is formed in the step 251 to form the element storage chamber 12.
It is designed so that the opening can be contacted with a sufficient width. Therefore, even if the filling liquid 1B expands, the contact sealing state between the silicone gel 23 and the step 251 is reliably maintained, and the filling liquid 1B is able to reach the opening of the element storage chamber 12. There is no such thing as overflowing. Furthermore, it is designed to reliably prevent moisture from entering from the creeping surface.
また上記装置にあっては、発熱の多い半導体チップ１３
Ｈ分のみが、フロロカーボン等の液体１６で満たされて
いるものであり、比較的発熱の小さい厚膜基板２０部分
には上記液体１Ｂが入らないようにされている。したが
って、半導体チップ１３で発生された熱は、上記基板２
０に伝達され難くなり、主に放熱ケース１１を介して放
熱されるようになるため、熱による厚膜基板２０の特性
劣化等は効果的に阻止できる。In addition, in the above device, the semiconductor chip 13 which generates a lot of heat
Only the H portion is filled with a liquid 16 such as fluorocarbon, and the liquid 1B is prevented from entering the thick film substrate 20 portion, which generates relatively little heat. Therefore, the heat generated by the semiconductor chip 13 is transferred to the substrate 2.
This makes it difficult for the heat to be transmitted to zero, and the heat is radiated mainly through the heat dissipation case 11, so that deterioration of the characteristics of the thick film substrate 20 due to heat can be effectively prevented.
上記実施例ではシリコーンゲルの変形する伸縮効果を利
用して、素子収納室１２内に液体ＩＢが充填保持される
ようにし、この液体１３の熱の変化による膨張および収
縮に対処できるようにしている。In the above embodiment, the elastic effect of silicone gel being deformed is used to fill and hold the liquid IB in the element storage chamber 12, so that expansion and contraction of the liquid 13 due to changes in heat can be dealt with. .
しかし、この液体の膨張等に対処するためには、例えば
ゴムのような伸縮性のある膜によって、上記充填液体を
封止するようにしてもよいものである。However, in order to cope with the expansion of the liquid, the filling liquid may be sealed with a stretchable membrane such as rubber.
第２図はシリコーンゲルを使用しない場合の実施例を示
しているもので、放熱ケースｉｔには前記実施例と同様
に素子収納室１２が形成され、この素子収納室１２内に
半導体チップ１３が、ヒートシンク１４、絶縁板１５を
介して収納固定設定されている。FIG. 2 shows an embodiment in which silicone gel is not used. In the heat dissipation case IT, an element storage chamber 12 is formed as in the previous embodiment, and a semiconductor chip 13 is placed in this element storage chamber 12. , a heat sink 14 , and an insulating plate 15 .
そして、上記素子収納室１２には、フロロカーボン等の
液体１Ｂが充填されているものである。The element storage chamber 12 is filled with a liquid 1B such as fluorocarbon.
このようにチップ１３が収納され、液体１６の充填され
た素子収納室１２と回路室１７は、その開口部を蓋体２
５によって閉じられるようになっている。そして、この
蓋体２５には窓２Ｂが形成され、この窓２６は伸縮性の
ある例えばシリコーンゴムによる膜２７によって封止さ
れるようになっている。The element storage chamber 12 and the circuit chamber 17, in which the chip 13 is stored and filled with the liquid 16, have their openings closed by the lid body 2.
It is designed to be closed by 5. A window 2B is formed in the lid 25, and the window 26 is sealed with a stretchable film 27 made of silicone rubber, for example.
すなわち、半導体チップ１３の発熱作用によって、索子
収納室１２に充填された液体１６が熱膨張するような状
態となっても、この熱膨張による容積の変化分が上記膜
２７の伸縮変形で吸収されるようになるものである。That is, even if the liquid 16 filled in the cable storage chamber 12 thermally expands due to the heat generation effect of the semiconductor chip 13, the change in volume due to this thermal expansion is absorbed by the expansion/contraction deformation of the membrane 27. It is something that will come to be done.
ここで、第２図では特別に窓２６を有する蓋体２５を設
定するように説明したが、これは放熱ケースの一部に上
記のような窓を形成すればよいものであり、要するに蓋
状体となる部分に窓２８が形成されるよにすればよいも
のである。Here, in FIG. 2, it has been explained that the cover body 25 having a window 26 is specially set, but this can be done by simply forming the above-mentioned window in a part of the heat dissipation case. It is sufficient if the window 28 is formed in the part that will become the body.
［発明の効果］
以上のようにこの発明に係る大電力用の半導体装置にあ
っては、半導体チップで発生した熱は、直接的に放熱ケ
ース部に伝達されると共に、このチップの周囲から、さ
らにこのチップを支持する部材等の周囲から、素子収納
室に充填された液体に伝達され、放熱ケースを介して効
果的に放出されるようになる。したがって、半導体チッ
プの放熱効果は充分に確保されるようになる。また、上
記放熱動作に対応して素子収納室に充填された液体が熱
膨張するようになるものであるが、この熱膨張による液
体の容積変化分は、上記素子収納室を封止する伸縮性を
有する封止手段によって効果的に吸収されるものであり
、液の封止部品に機械的な応力が作用することを確実に
阻止できる。[Effects of the Invention] As described above, in the high-power semiconductor device according to the present invention, heat generated in the semiconductor chip is directly transmitted to the heat dissipation case portion, and is also transferred from the periphery of the chip. Further, the heat is transmitted from the periphery of the member supporting the chip to the liquid filled in the element housing chamber, and is effectively released through the heat dissipation case. Therefore, the heat dissipation effect of the semiconductor chip can be sufficiently ensured. In addition, the liquid filled in the element storage chamber thermally expands in response to the heat dissipation operation, and the volume change of the liquid due to this thermal expansion is caused by the elasticity that seals the element storage chamber. This can be effectively absorbed by the sealing means having the following properties, and can reliably prevent mechanical stress from acting on the liquid sealing component.
第１図はこの発明の一実施例に係る大電力用半導体装置
を説明する断面構成図、第２図はこの発明の他の実施例
を説明する断面構成図である。
１１・・・放熱ケース、１２・・・素子収納室、１３・
・・半導体チップ、１４・・・ヒートシンク、１５・・
・絶縁板、ｌＢ・・・液体（熱伝導性良好な絶縁性の）
、１８・・・封止室、２０・・・厚膜基板、２３・・・
シリ・コーンゲル、２Ｂ・・・窓、２７・・・シリコー
ンゴムの膜。FIG. 1 is a sectional configuration diagram illustrating a high power semiconductor device according to one embodiment of the present invention, and FIG. 2 is a sectional configuration diagram illustrating another embodiment of the invention. 11... Heat dissipation case, 12... Element storage chamber, 13.
...Semiconductor chip, 14...Heat sink, 15...
・Insulating plate, lB...liquid (insulating with good thermal conductivity)
, 18... Sealing chamber, 20... Thick film substrate, 23...
Silicone gel, 2B...window, 27...silicone rubber membrane.
Claims (3)
ケースと、 上記素子収納室内にヒートシンクを介して接着固定され
た半導体素子と、 上記素子収納室内に充填設定された電気絶縁性の熱伝導
性良好な液体と、 この液体の充填された上記素子収納室の開口部を封する
伸縮性の設定される封止手段とを具備し、 上記液体の熱による膨張分が、上記封止手段で吸収され
るようにしたことを特徴とする大電力用半導体装置。(1) A heat dissipation case in which an element storage chamber with an opening on one side is formed, a semiconductor element adhesively fixed in the element storage chamber via a heat sink, and an electrically insulating case filled and set in the element storage chamber. It comprises a liquid with good thermal conductivity and a sealing means set to have elasticity for sealing the opening of the element storage chamber filled with the liquid, and the expansion of the liquid due to heat causes the seal to close. A semiconductor device for high power, characterized in that the power is absorbed by a means.
るように充填されるシリコーンゲルによって構成される
ようにした特許請求の範囲第１項記載の大電力用半導体
装置。(2) The high-power semiconductor device according to claim 1, wherein the sealing means is constituted by silicone gel filled so as to seal the opening of the element storage chamber.
るように設定された窓を有する蓋状体、およびこの蓋状
体の上記窓を封するように設定された柔軟性を有する物
質によって構成されるようにした特許請求の範囲第１項
記載の大電力用半導体装置。(3) The sealing means includes a lid-shaped body having a window configured to seal the opening of the element storage chamber, and a flexible lid-shaped body configured to seal the window of the lid-shaped body. 2. A high-power semiconductor device according to claim 1, wherein the semiconductor device is made of a material comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61243523A JPS6396945A (en) | 1986-10-14 | 1986-10-14 | High-power semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61243523A JPS6396945A (en) | 1986-10-14 | 1986-10-14 | High-power semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6396945A true JPS6396945A (en) | 1988-04-27 |
Family
ID=17105171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61243523A Pending JPS6396945A (en) | 1986-10-14 | 1986-10-14 | High-power semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6396945A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0422418A2 (en) * | 1989-10-10 | 1991-04-17 | Hughes Aircraft Company | Integrating laser diode pumped laser apparatus |
| US5413965A (en) * | 1993-09-13 | 1995-05-09 | Motorola, Inc. | Method of making microelectronic device package containing a liquid |
| JP2002306267A (en) * | 2001-04-10 | 2002-10-22 | T S Tec Kk | Rotary sheet |
| US7218000B2 (en) * | 2003-06-27 | 2007-05-15 | Intel Corporation | Liquid solder thermal interface material contained within a cold-formed barrier and methods of making same |
| JP2008016551A (en) * | 2006-07-04 | 2008-01-24 | Mitsubishi Electric Corp | Semiconductor device |
-
1986
- 1986-10-14 JP JP61243523A patent/JPS6396945A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0422418A2 (en) * | 1989-10-10 | 1991-04-17 | Hughes Aircraft Company | Integrating laser diode pumped laser apparatus |
| US5413965A (en) * | 1993-09-13 | 1995-05-09 | Motorola, Inc. | Method of making microelectronic device package containing a liquid |
| JP2002306267A (en) * | 2001-04-10 | 2002-10-22 | T S Tec Kk | Rotary sheet |
| US7218000B2 (en) * | 2003-06-27 | 2007-05-15 | Intel Corporation | Liquid solder thermal interface material contained within a cold-formed barrier and methods of making same |
| JP2008016551A (en) * | 2006-07-04 | 2008-01-24 | Mitsubishi Electric Corp | Semiconductor device |
| DE102007008912B4 (en) * | 2006-07-04 | 2009-01-29 | Mitsubishi Electric Corp. | Semiconductor device |
| US7554192B2 (en) | 2006-07-04 | 2009-06-30 | Mitsubishi Electric Corporation | Semiconductor device having filler with thermal conductive particles |
| JP4735446B2 (en) * | 2006-07-04 | 2011-07-27 | 三菱電機株式会社 | Semiconductor device |
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