JPS6396272A - Chemical vapor deposition method - Google Patents
Chemical vapor deposition methodInfo
- Publication number
- JPS6396272A JPS6396272A JP24212086A JP24212086A JPS6396272A JP S6396272 A JPS6396272 A JP S6396272A JP 24212086 A JP24212086 A JP 24212086A JP 24212086 A JP24212086 A JP 24212086A JP S6396272 A JPS6396272 A JP S6396272A
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen
- base material
- film
- raw material
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 25
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 23
- 239000001257 hydrogen Substances 0.000 claims abstract description 23
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000002994 raw material Substances 0.000 claims abstract description 14
- 238000006243 chemical reaction Methods 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims description 13
- 238000006722 reduction reaction Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 abstract description 6
- 238000000576 coating method Methods 0.000 abstract description 6
- 150000002431 hydrogen Chemical class 0.000 abstract description 3
- 238000005468 ion implantation Methods 0.000 abstract description 2
- 238000007747 plating Methods 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- -1 and after drying Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は化学蒸着法の改良に関し、特に機械産業分野に
おける耐摩耗、耐食、耐熱部材の保護膜コーティング及
び電子デバイス、センサー等の機能膜に有利に適用可能
な同方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to improvements in chemical vapor deposition methods, particularly for protective film coatings of wear-resistant, corrosion-resistant, and heat-resistant members in the mechanical industry field, and functional films for electronic devices, sensors, etc. The method is advantageously applicable.
化学蒸着法はＣＶＤ法とも言われておシ、還元、置換等
の化学反応によって基材表面に皮膜を形成する方法であ
シ、熱ｃｖＤ、減圧Ｃ”／ Ｄ１プラズマｃｖｎ等の方
法が利用されている。The chemical vapor deposition method, also known as the CVD method, is a method of forming a film on the surface of a substrate through chemical reactions such as reduction and substitution. Methods such as thermal CVD and reduced pressure C"/D1 plasma CVN are used. ing.
いずれのＣＶＯ法においても原料となる反応ガスを反応
容器に導き、反応容器内の基材表面に皮膜を形成させる
ものであるが、原料がガスであるためガスの到達する所
には全て皮膜が形成されるという特徴がある。これは複
雑形状品や穴の内部でもコーティング可能という長所で
あると云えるが、局部的にコーティングしたい場合には
短所となる。すなわち原料ガスが僅かな隙間でも流れる
ため、マスキングが困難で、しかも反応温度が高温（通
常１ｏｏｏｃ近傍、低くても３０００以上）のためマス
キング材料も耐えるものがない。又、基材のみですく、
基材を固定する治具や反応容器内面にも皮膜が形成され
、メインテナンスに多大の労力を費やすという問題点も
あった。従って、基材のみあるいは基材の局部のみにコ
ーティングすることが課題となっている。In both CVO methods, a reactant gas serving as a raw material is introduced into a reaction vessel and a film is formed on the surface of the substrate inside the reaction vessel, but since the raw material is a gas, a film is formed everywhere the gas reaches. It has the characteristic of being formed. This can be said to be an advantage in that it is possible to coat products with complex shapes or inside holes, but it is a disadvantage when it is desired to coat locally. That is, since the raw material gas flows through even a small gap, masking is difficult, and since the reaction temperature is high (usually around 100°C, at least 3000°C or more), there is no masking material that can withstand it. Also, only the base material is needed.
There was also the problem that a film was formed on the jig for fixing the substrate and on the inner surface of the reaction vessel, requiring a great deal of effort for maintenance. Therefore, it has become a problem to coat only the base material or only a local part of the base material.
本発明は上述した従来のＣＶＯ法における不具合を解消
し、局部のみにもコーティング可能なＣＶＯ法を提供し
ようとするものである。The present invention aims to solve the above-mentioned problems with the conventional CVO method and to provide a CVO method that can coat only local areas.
し問題点全解決する念めの手段〕
本発明は基材又は基材の一部に水素を吸蔵させ、その後
、水素還元反応を利用する化学蒸着用原料ガス中の水素
以外のガスを原料ガスとして使用し、化学反応によって
基材に皮膜を形成すること全特徴とする化学蒸着法であ
る。[Measures to Solve All Problems] The present invention stores hydrogen in a base material or a part of the base material, and then converts a gas other than hydrogen in a raw material gas for chemical vapor deposition using a hydrogen reduction reaction into a raw material gas. It is a chemical vapor deposition method characterized by the formation of a film on a substrate through a chemical reaction.
すなわち、本発明は基材又は、基材中のコーティングし
たい局部のみに、電解又は水素中での加圧・加熱処理に
より水素を吸蔵させた後、水素還元反Ｃｋ利用するＣＶ
Ｏ用原料ガス中の水素以外のガスを流して、基材よジ放
出される水素と反応させ、基材又は基材の一部のみに皮
膜を形成させるものである。That is, the present invention absorbs hydrogen only in a base material or a local part of the base material to be coated by electrolysis or pressurization and heat treatment in hydrogen, and then uses a CV method that uses hydrogen reduction anti-Ck.
A gas other than hydrogen in the raw material gas for O is caused to flow and react with the hydrogen released from the base material to form a film on the base material or only a part of the base material.
本発明によれば皮膜は所望の部分のみに形成されるため
、局部コーティングが可能になるとともに、反応容器あ
るいは容器内の治具等には皮膜が形成されず、メンテナ
ンスも容易となる。According to the present invention, since the film is formed only on desired areas, local coating is possible, and the film is not formed on the reaction vessel or the jigs inside the vessel, making maintenance easier.
〔実施例１〕
基材として３０ＨｍＸ ３ （］）ＩＸ １０ｍ’
のステンレス＠（ＳｃｒＳ３０４）？使用して、以下の
条件で水素の陰極電解チャージを行った。[Example 1] 30HmX 3 (])IX 10m' as a base material
Stainless steel @ (ScrS304)? Cathode electrolytic charging of hydrogen was performed using the following conditions.
次にこの試験片４を第１図に示すＣＶＯ装置に充填し、
容器１に水素以外の原料ガス３を流入させると共に、ヒ
ータ２により試験片４を加熱してＯＶＤ反応を起こさせ
ＴＩＮ皮膜を形成した。コーティング条件は以下の通ジ
である。Next, this test piece 4 was filled into the CVO device shown in FIG.
A raw material gas 3 other than hydrogen was introduced into the container 1, and the test piece 4 was heated by the heater 2 to cause an OVD reaction to form a TIN film. The coating conditions are as follows.
生成した皮膜の結晶構造と膜厚を測定した結果、厚さ２
０μｍ のＴＩＮ皮膜が得られていたことを確認した。As a result of measuring the crystal structure and film thickness of the formed film, the thickness was 2.
It was confirmed that a TIN film of 0 μm was obtained.
〔実施例２〕
低合金鋼（２ＶｉＣｒ −Ｉ Ｍｏ鋼）製の３０ＷｒＩ
Ｉ×５０ｍＭ×１０ｍ１ の基材を用いて、以下の条
件で水素中で加圧・加熱処理した。[Example 2] 30WrI made of low alloy steel (2ViCr-I Mo steel)
A base material of I x 50mM x 10m1 was subjected to pressure and heat treatment in hydrogen under the following conditions.
次にこの試験片５を第２図に示すプラズマ０ＶＤ装置に
充填し、容器１を真空排気し九後Ａｒ ガスを導入し
、さらにガス導入口４より反応ガスを流し、その後、電
極２，２′に高周波電源３より高周波電界を印加してグ
ロー放電させてＯＶＤ反応を起こさせた。条件は以下の
通りである。Next, this test piece 5 was filled into the plasma 0VD apparatus shown in FIG. A high-frequency electric field was applied from the high-frequency power supply 3 to ' to cause a glow discharge, thereby causing an OVD reaction. The conditions are as follows.
生成した皮膜の結晶構造と膜厚を測定し次結果、厚さ１
μｍの入ｌ！２０３ 膜が形成されていたことを確認
した。The crystal structure and film thickness of the formed film were measured and the result was that the thickness was 1.
Enter μm! It was confirmed that a 203 film was formed.
〔実施例３〕
〔実施例１〕と同一の基材を用い、基材表面の半分をめ
つき防止用塗料を塗布し乾燥し念後、〔実施例１〕と同
一条件で水素の陰極電解チャージを行った。次にめっき
防止用塗膜を剥離した後、〔実施例１〕と同一の方法で
ＣＶＯによるＴＩＮコーティングを実施した結果、めっ
き防止膜を塗布しなかった部分にはＴＩＮ皮膜の生成が
認められたのに対して、めっき防止膜塗布部には、めっ
き防止膜境界部以外には、皮膜の生成は認められなかっ
た。[Example 3] Using the same base material as [Example 1], half of the base material surface was coated with anti-plating paint, and after drying, hydrogen was cathodic electrolyzed under the same conditions as [Example 1]. Charged. Next, after peeling off the anti-plating coating, TIN coating was applied using CVO in the same manner as in [Example 1], and as a result, formation of a TIN film was observed in areas where the anti-plating coating was not applied. On the other hand, no film formation was observed in the areas where the anti-plating film was applied, other than at the boundaries of the anti-plating film.
なお、局部的に水素を吸蔵させる方法として、イオン注
入法が使用でき、任意のパターンにＣＶＯ被膜が形成可
能である。Note that an ion implantation method can be used as a method for locally absorbing hydrogen, and a CVO film can be formed in an arbitrary pattern.
以上、実施例によって詳述したよ少に、本発明によれば
基材又は基材の局部のみなど、所望の部分のみに皮膜を
形成することが可能となり、局部コーティング全可能に
すること、灰石容器あるいは容器内の治具等への付着が
防止できるなど、工業的に意義あるものである。As described above in detail with reference to the embodiments, according to the present invention, it is possible to form a film only on a desired part, such as a base material or only a local part of a base material, and it is possible to completely coat the film locally. This is of industrial significance as it can prevent adhesion to stone containers or jigs inside the containers.
第１図及び第２図は本発明の実施態様を説明するための
図であり、第１図は加熱ＣＶＯ法、第２図はプラズマＣ
ＶＤ法の例示図である。
復代理人 内 １） 明
復代理人 萩 原 亮 −
復代理人 安 西 篤 夫
第２図1 and 2 are diagrams for explaining embodiments of the present invention, in which FIG. 1 shows the heating CVO method, and FIG. 2 shows the plasma CVO method.
It is an illustration diagram of the VD method. Sub-Agents 1) Meifuku Agent Ryo Hagiwara - Sub-Agent Atsuo Anzai Figure 2
Claims (1)
元反応を利用する化学蒸着用原料ガス中の水素以外のガ
スを原料ガスとして使用し、化学反応によつて基材に皮
膜を形成することを特徴とする化学蒸着法。Hydrogen is stored in the base material or a part of the base material, and then a gas other than hydrogen in the raw material gas for chemical vapor deposition using a hydrogen reduction reaction is used as the raw material gas, and a film is formed on the base material through a chemical reaction. A chemical vapor deposition method characterized by forming.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24212086A JPS6396272A (en) | 1986-10-14 | 1986-10-14 | Chemical vapor deposition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24212086A JPS6396272A (en) | 1986-10-14 | 1986-10-14 | Chemical vapor deposition method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6396272A true JPS6396272A (en) | 1988-04-27 |
Family
ID=17084593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24212086A Pending JPS6396272A (en) | 1986-10-14 | 1986-10-14 | Chemical vapor deposition method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6396272A (en) |
-
1986
- 1986-10-14 JP JP24212086A patent/JPS6396272A/en active Pending
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