JPH01298173A - Production of deposited film by microwave plasma cvd - Google Patents

Production of deposited film by microwave plasma cvd

Info

Publication number
JPH01298173A
JPH01298173A JP12821988A JP12821988A JPH01298173A JP H01298173 A JPH01298173 A JP H01298173A JP 12821988 A JP12821988 A JP 12821988A JP 12821988 A JP12821988 A JP 12821988A JP H01298173 A JPH01298173 A JP H01298173A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
plasma
deposited film
gas
heating
discharge space
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12821988A
Inventor
Koichi Matsuda
Tatsuji Okamura
Hirokazu Otoshi
Keishi Saito
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To form the title good-quality deposited film on a substrate with good reproducibility and productivity by converting a heating gas to plasma, heating the substrate with the plasma, sending a cooling gas from the inside to regulate the temp., and then converting a raw gas to plasma.
CONSTITUTION: Plural carriers 405 held by a rotating shaft 406 are arranged in a vacuum vessel 401 having a discharge port 404 with a discharge space 408 at the center. The raw gas is supplied into the discharge space 408 from a gas discharge port 410, and converted to plasma by the microwave energy introduced from a waveguide 403 through a dielectric window 402 to form a deposited film such as a functional film on the carrier 405. In the production of the deposited film by microwave CVD, a heating gas of Ar, H2, etc., is introduced into the discharge space 408 prior to the formation of a deposited film to produce plasma. The carrier 405 is heated by the heat energy of the plasma, and a cooling gas of an inert gas, etc., is simultaneously sent from the inside to control the temp. to a specified value. The deposited film is subsequently formed.
COPYRIGHT: (C)1989,JPO&Japio
JP12821988A 1988-05-27 1988-05-27 Production of deposited film by microwave plasma cvd Granted JPH01298173A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12821988A JPH01298173A (en) 1988-05-27 1988-05-27 Production of deposited film by microwave plasma cvd

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12821988A JPH01298173A (en) 1988-05-27 1988-05-27 Production of deposited film by microwave plasma cvd

Publications (1)

Publication Number Publication Date
JPH01298173A true true JPH01298173A (en) 1989-12-01

Family

ID=14979440

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12821988A Granted JPH01298173A (en) 1988-05-27 1988-05-27 Production of deposited film by microwave plasma cvd

Country Status (1)

Country Link
JP (1) JPH01298173A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998044543A1 (en) * 1997-03-31 1998-10-08 Lam Research Corporation Method for microwave plasma substrate heating
WO1999024637A1 (en) * 1997-11-07 1999-05-20 Applied Komatsu Technology, Inc. Method for annealing an amorphous film using microwave energy
JP2009149999A (en) * 2009-04-01 2009-07-09 Canon Anelva Corp Device for and method of producing metallic film

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998044543A1 (en) * 1997-03-31 1998-10-08 Lam Research Corporation Method for microwave plasma substrate heating
US6030666A (en) * 1997-03-31 2000-02-29 Lam Research Corporation Method for microwave plasma substrate heating
WO1999024637A1 (en) * 1997-11-07 1999-05-20 Applied Komatsu Technology, Inc. Method for annealing an amorphous film using microwave energy
JP2009149999A (en) * 2009-04-01 2009-07-09 Canon Anelva Corp Device for and method of producing metallic film

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