JPS6396261A - Chromium-based alloy for vapor deposition - Google Patents
Chromium-based alloy for vapor depositionInfo
- Publication number
- JPS6396261A JPS6396261A JP24095486A JP24095486A JPS6396261A JP S6396261 A JPS6396261 A JP S6396261A JP 24095486 A JP24095486 A JP 24095486A JP 24095486 A JP24095486 A JP 24095486A JP S6396261 A JPS6396261 A JP S6396261A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- chromium
- less
- vapor deposition
- based alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000956 alloy Substances 0.000 title claims abstract description 46
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 44
- 239000011651 chromium Substances 0.000 title claims abstract description 34
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 29
- 229910052804 chromium Inorganic materials 0.000 title claims abstract description 26
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 239000000463 material Substances 0.000 abstract description 17
- 229910052751 metal Inorganic materials 0.000 abstract description 15
- 239000012535 impurity Substances 0.000 abstract description 8
- 239000011819 refractory material Substances 0.000 abstract description 8
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 abstract description 6
- 230000001681 protective effect Effects 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000005275 alloying Methods 0.000 abstract description 3
- 229910052791 calcium Inorganic materials 0.000 abstract description 3
- 239000007769 metal material Substances 0.000 abstract description 2
- 238000003723 Smelting Methods 0.000 abstract 1
- -1 and in some cases Substances 0.000 abstract 1
- 150000001844 chromium Chemical class 0.000 abstract 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 23
- 239000000292 calcium oxide Substances 0.000 description 22
- 235000012255 calcium oxide Nutrition 0.000 description 22
- 239000010409 thin film Substances 0.000 description 21
- 239000010408 film Substances 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241001422033 Thestylus Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910000514 dolomite Inorganic materials 0.000 description 1
- 239000010459 dolomite Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001603 reducing effect Effects 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は蒸着用クロム基合金に係り、特にLSI用のフ
ォトマスク用や磁気記録ディスク、テープとして用いら
れる磁性薄膜の保護膜又は下地材として用いられる純ク
ロム薄膜の製造に好適な蒸着用クロム基合金に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a chromium-based alloy for vapor deposition, particularly as a protective film or base material for magnetic thin films used for LSI photomasks, magnetic recording disks, and tapes. The present invention relates to a chromium-based alloy for vapor deposition suitable for producing pure chromium thin films.
[従来の技術]
[LSI製造用のフォトマスクは純クロムのターゲツト
材を用いたスパッタリングや真空蒸着が行なわれている
。また、非磁性基板上に磁性合金薄膜を形成した磁気記
録材料は周知である。[Prior Art] [Photomasks for LSI manufacturing are made by sputtering or vacuum evaporation using a target material of pure chromium. Furthermore, magnetic recording materials in which a magnetic alloy thin film is formed on a nonmagnetic substrate are well known.
この磁気記録材料の薄膜やその下地膜、保護膜を製造す
る方法としては、スパッタリングや真空蒸着、イオンブ
レーティング等の蒸着法が広く用いられている。Vapor deposition methods such as sputtering, vacuum evaporation, and ion blasting are widely used as methods for producing thin films of magnetic recording materials, their base films, and protective films.
特にスパッタリング法は、均一な内部組成で一定の合金
元素を含んだターゲツト材が得られさえすれば、スパッ
タリング装置内の圧力をコントロールしながら組成的に
均一な薄膜を得ることができる点で有利である。In particular, the sputtering method is advantageous in that it is possible to obtain a compositionally uniform thin film while controlling the pressure inside the sputtering device, as long as a target material containing a certain alloying element with a uniform internal composition is obtained. be.
従来、磁気記録材料の下地膜や保護膜材料としては、純
クロムあるいその合金材が用いられており、具体的には
、
■ LSI製造用のフォトマスク用ターゲツト材■ ハ
ードディスク材(Co−Ni、N1−C。Conventionally, pure chromium or its alloys have been used as base films and protective film materials for magnetic recording materials. , N1-C.
が主な磁気記録材となる)の保護膜及び下地材等におい
て、広く用いられている。It is widely used as a protective film and base material for magnetic recording materials (mainly used as magnetic recording materials).
[発明が解決しようとする問題点]
従来より用いられているクロム基合金について種々検討
を重ねたところ、酸素、窒素、硫黄、炭素、その他金属
酸化物等の介在物が比較的多量に含まれており、得られ
る薄膜の耐食性や均質性、平滑性等が悪く、製造する磁
気記録材の磁気特性に多大な悪影響をもたらすことがル
3められた。[Problems to be solved by the invention] After conducting various studies on conventionally used chromium-based alloys, we found that they contain relatively large amounts of inclusions such as oxygen, nitrogen, sulfur, carbon, and other metal oxides. It has been found that the resulting thin film has poor corrosion resistance, homogeneity, smoothness, etc., and has a significant adverse effect on the magnetic properties of the magnetic recording material produced.
[問題点を解決するための手段]
本発明は上記従来の実情に鑑み、不純物含有量の少ない
高特性薄膜を安定かつ効率的に得ることができる蒸着用
クロム基合金を提供するべくなされたものでありて、
Afi1重量%以下、CCa200pp以下、04oo
ppm以下、NN200pp以下を含有し、残部が実質
的にCrであることを特徴とする蒸着用クロム基合金、
及び
A11重量%以下、Ti1重量%以下、CCa200p
p以下、0O400pp以下、NN200pp以下を含
有し、残部が実質的にCrであることを特徴とする蒸着
用クロム基合金、を要旨とするものである。[Means for Solving the Problems] In view of the above-mentioned conventional circumstances, the present invention has been made in order to provide a chromium-based alloy for vapor deposition that can stably and efficiently obtain a high-performance thin film with a low impurity content. and Afi 1% by weight or less, CCa 200pp or less, 04oo
ppm or less, NN200pp or less, the balance being substantially Cr, and A11% by weight or less, Ti1% by weight or less, CCa200p.
The gist of the present invention is a chromium-based alloy for deposition, characterized in that it contains 400 pp or less of 0O, 400 pp or less of NN, and 200 pp or less of NN, with the remainder being substantially Cr.
即ち、本発明者は、蒸着用合金の不純物に起因する問題
を解決し、高特性薄膜を得るべく、鋭意検討を重ねた結
果、蒸着用クロム基合金中に、特定量のCaとAn場合
により更にTiとを含有させることにより、不純物含有
量の少ない合金が得られ、しかもCaとAu2、Tiと
によるゲッタ作用により、蒸着霊囲気中のガス成分をも
低減し、極めて高純度で高特性の薄膜を得ることができ
ることを見出し、本発明を完成させた。That is, in order to solve the problem caused by impurities in the vapor deposition alloy and obtain a thin film with high characteristics, the present inventor has made extensive studies and found that a specific amount of Ca and An may be added to the vapor deposition chromium-based alloy. Furthermore, by including Ti, an alloy with low impurity content can be obtained, and the getter action of Ca, Au2, and Ti also reduces the gas component in the vapor deposition atmosphere, resulting in an alloy with extremely high purity and high characteristics. They discovered that a thin film can be obtained and completed the present invention.
以下、本発明につき詳細に説明する。Hereinafter, the present invention will be explained in detail.
なお、本明細書において、「%」は「重量%」を表すも
のである。In addition, in this specification, "%" represents "weight%."
本発明の蒸着用クロム基合金は、真空蒸着あるいはスパ
ッタリング、イオンブレーティング等の蒸着用材料とし
て用いられ、磁性薄膜の下地や保護膜の製造等に利用さ
れるものであって、その組成は、下記の通りである。The chromium-based alloy for vapor deposition of the present invention is used as a material for vapor deposition in vacuum vapor deposition, sputtering, ion blating, etc., and is used for manufacturing bases and protective films for magnetic thin films, and its composition is as follows: It is as follows.
Cr:残部
Aflt1%以下
Ti:含有せず(第1の発明)又は1%以下(第2の発
明)
Ca : 200ppm以下
○ : 400PI)m以下
N :200ppm以下
以下に本発明の合金組成の限定理由について説明する。Cr: remaining Aflt 1% or less Ti: not contained (first invention) or 1% or less (second invention) Ca: 200 ppm or less ○: 400 PI) m or less N: 200 ppm or less Limiting the alloy composition of the present invention Let me explain the reason.
AA、Tiは、合金の溶製を行なう際に、Caと共に合
金の清浄化に作用し、また蒸着τ囲気中にてガス成分を
捕捉するゲッタ作用を有する。ただし、八1、Tiはそ
の量があまりに多過ぎ、合金特性に影響を及ぼす量であ
っては好ましくなく、このため本発明においては、Af
11%以下、あるいはAu21%以下及びTi1%以下
とする。AA and Ti work together with Ca to clean the alloy when melting the alloy, and also have a getter action to trap gas components in the vapor deposition τ atmosphere. However, the amount of 81 Ti is too large and it is not preferable that the amount affects the alloy properties. Therefore, in the present invention, Af
11% or less, or 21% or less of Au and 1% or less of Ti.
当然のことながら、八λ、Tiは、その量があまりに少
な過ぎると上記清浄化作用及びゲッタ作用による十分な
効果が得られない。本発明においては、Au2は0.0
1〜1.0%、あるいは、Au0.01〜1.0%及び
Ti0.01〜1.0%、より好ましくはAu2あるい
はAuとTiとの合量で0,02〜0.2%含有させる
のが望ましい。なお、An、Tiは、固溶A11固溶T
iの形態で合金中に存在することにより、本発明の効果
を奏するものであるので、An、Tiの存在形態は固溶
状態であることが重要である。Naturally, if the amount of Ti is too small, sufficient effects of the above-mentioned cleaning action and getter action cannot be obtained. In the present invention, Au2 is 0.0
1 to 1.0%, or 0.01 to 1.0% of Au and 0.01 to 1.0% of Ti, more preferably 0.02 to 0.2% of Au2 or the total amount of Au and Ti. is desirable. Note that An and Ti are solid solution A11 solid solution T
Since the effects of the present invention are achieved by existing in the alloy in the form of An and Ti, it is important that the form of existence of An and Ti is in a solid solution state.
Caは前述の如<AJZ、Tiと共に合金の清浄化に作
用し、またゲッタ作用を奏する。Caは、その含有量が
あまりに多過ぎると合金特性に影響を及ぼし、また、金
属間化合物等の析出により合金を脆くすることがある。As mentioned above, Ca works together with Ti to clean the alloy and also has a getter action. If the content of Ca is too large, it may affect the alloy properties and may also cause the alloy to become brittle due to the precipitation of intermetallic compounds and the like.
このため、本発明においてはCa含有量は200ppm
以下とする。一方、Ca含有量は少な過ぎてもCaによ
る十分な清浄化作用及びゲッタ作用が現れない。このよ
うなことから、Ca含有量は5〜200ppm、特に1
0〜30ppmの範囲とするのが好ましい。Therefore, in the present invention, the Ca content is 200 ppm.
The following shall apply. On the other hand, if the Ca content is too low, sufficient cleaning and gettering effects due to Ca will not occur. For this reason, the Ca content is 5 to 200 ppm, especially 1
It is preferably in the range of 0 to 30 ppm.
なお、CaはCaOないしCa0−AfL203の形態
では本発明の効果は奏し得ないことから、合金中のCa
の存在形態は金属Caであることが重要である。Note that since the effects of the present invention cannot be achieved when Ca is in the form of CaO or Ca0-AfL203, Ca in the alloy is
It is important that the existing form of is metallic Ca.
合金中のO,Nのユが多いと、蒸着に使用した際に、蒸
着雰囲気の真空度を悪化させたり、また良好な蒸着が行
なえず、高特性の磁性薄膜が得られない。このため、合
金中のO含有量は400ppm以下、好ましくは300
ppm以下、N含有量は200ppm以下、好ましくは
1100pp以下とする。If the amount of O and N in the alloy is too large, the degree of vacuum in the vapor deposition atmosphere will deteriorate when the alloy is used for vapor deposition, and good vapor deposition will not be possible, making it impossible to obtain a magnetic thin film with high characteristics. Therefore, the O content in the alloy is 400 ppm or less, preferably 300 ppm or less.
ppm or less, and the N content is 200 ppm or less, preferably 1100 ppm or less.
なお、本発明において、Si、Mn、P、S等の不純物
が合金中に不可避的に含有されるのは、特に問題とはな
らないが、上述したことと同様の理由から、本発明にお
いて、合金中の他の不純物はできるだけ少なくするのが
良く、例えば、St含有量0.1%以下、Mn含有量は
0.05%以下、P含有率は8ppm以下、S含有量は
30ppm以下とするのが好ましい。In the present invention, it is not a particular problem that impurities such as Si, Mn, P, and S are unavoidably contained in the alloy. It is better to reduce other impurities in the material as much as possible, for example, the St content is 0.1% or less, the Mn content is 0.05% or less, the P content is 8ppm or less, and the S content is 30ppm or less. is preferred.
このような本発明の蒸着用クロム基合金は、例えば、以
下に説明する方法に従って製造することができる。Such a chromium-based alloy for vapor deposition of the present invention can be manufactured, for example, according to the method described below.
即ち、まず、合金化のためのCr、An、場合によりT
iの金属又は合金材料を、内面がCaO質耐火材で構成
された容器中で、真空又はアルゴン等の不活性ガス雰囲
気等の非酸化性雰囲気にて、常法例えば高周波あるいは
低周波話導加熱法等で加熱して溶解することにより、所
望の組成の合金溶湯を得る。That is, first, Cr, An, and optionally T are added for alloying.
The metal or alloy material i is heated in a container whose inner surface is made of a CaO-based refractory material in a non-oxidizing atmosphere such as a vacuum or an inert gas atmosphere such as argon by a conventional method such as high frequency or low frequency conduction heating. By heating and melting using a method or the like, a molten alloy having a desired composition is obtained.
本発明において、用いられる容器の内面を構成するCa
O質耐火材としては、カルシア(Cab)ならびにCa
Oを富化したドロマイト等が挙げられるが、特に、電融
カルシアが好適である。In the present invention, Ca constituting the inner surface of the container used
O-grade refractory materials include calcia (Cab) and Ca.
Examples include O-enriched dolomite, and fused calcia is particularly preferred.
このようなカルシア質炉材は、そのCaO含有率が60
%以上、特に80%以上のものが好ましい。Such calcia furnace material has a CaO content of 60
% or more, especially 80% or more is preferable.
CaOは高融点であると共に、高温で極めて安定であり
、溶製にあたり、金属酸化物を生成して溶湯を不純物に
より汚染することがなく、高清浄な溶湯を得ることが可
能とされる。CaO has a high melting point and is extremely stable at high temperatures, making it possible to obtain a highly clean molten metal without producing metal oxides and contaminating the molten metal with impurities during melting.
特に、CaO含有量の高いCaO質耐火材で内面が構成
された容器を用いた場合には、脱0、脱S、脱介在物等
の精辣作用も奏され、極めて有利である。In particular, when a container whose inner surface is made of a CaO-based refractory material with a high CaO content is used, it is extremely advantageous because it achieves excellent effects such as zero removal, S removal, and inclusion removal.
しかも、溶湯中にAfL、T 1が存在するため、?8
湯中の脱0、脱Sが行なわれ、これに伴って脱Nも起こ
る。また、炉壁材のCaOとAlとの反応により溶湯中
へのCaの溶出もおこる。即ち、Anは溶湯中のO及び
炉壁のCaOと溶湯中のSと反応して
Ca O+ 5−4Ca S + 0
となって生じたOと反応して、
2AfL+30→Au203
となり、AfL203を生じる。また溶湯中のAlは炉
壁のCaOと反応して
2An+3CaO−+An203 +3Ca (g)と
なり、これによってもAu2203が生じる。Moreover, since AfL and T 1 exist in the molten metal, ? 8
In hot water, zero and sulfur removal occurs, and along with this, nitrogen removal also occurs. Furthermore, Ca is leached into the molten metal due to the reaction between CaO and Al in the furnace wall material. That is, An reacts with O in the molten metal, CaO on the furnace wall, and S in the molten metal to form CaO+ 5-4Ca S + 0, and reacts with the generated O to form 2AfL+30→Au203, producing AfL203. Furthermore, Al in the molten metal reacts with CaO on the furnace wall to form 2An+3CaO-+An203+3Ca (g), which also produces Au2203.
(この場合、生じたCaは、ガスとな)て系外に抜ける
が、一部が合金中に残留して、本発明の合金のCa含有
量を満足させる。)
AfL203は次式の如く炉壁のCaOと反応して、3
CaO・Au203又は12CaO−7AIL203の
活性な層が炉壁表面に形成される。(In this case, the generated Ca becomes a gas) and escapes from the system, but a portion remains in the alloy to satisfy the Ca content of the alloy of the present invention. ) AfL203 reacts with CaO on the furnace wall as shown in the following equation, and 3
An active layer of CaO.Au203 or 12CaO-7AIL203 is formed on the furnace wall surface.
A II 203 + 3 Ca O−= 3 Ca
O−A J22037AJZ203+12CaO”
12CaOH7Af1203
こO’)12CaO+ 7AJZ203及び3CaO−
Au203 、特に3Cao−Af12o3は溶湯の脱
S能が高く、脱Sが良好に進行する。A II 203 + 3 Ca O-= 3 Ca
O-A J22037AJZ203+12CaO" 12CaOH7Af1203 KO') 12CaO+ 7AJZ203 and 3CaO-
Au203, especially 3Cao-Af12o3, has a high ability to remove S from the molten metal, and S removal progresses well.
このように、Alにより脱0が、またAILの還元作用
により生じたCa及び坩堝型での活性な3Cao−AJ
12o3.12cao・7AfL203やCaOにより
脱Sが行なわれる。In this way, Al causes de0, and Ca generated by the reducing action of AIL and active 3Cao-AJ in the crucible type.
S removal is performed by 12o3.12cao.7AfL203 and CaO.
また溶湯中のNは前述のAnとCaOとの反応により生
じたCa等の蒸発(沸騰)等に伴って溶湯中から離脱し
、溶湯中のN量も低減される。Further, N in the molten metal is removed from the molten metal due to evaporation (boiling) of Ca, etc. generated by the reaction between An and CaO, and the amount of N in the molten metal is also reduced.
Tiが加わった場合、Au2の作用を補完し、更にAl
と同様の作用により脱o1脱S、脱Nを行なう。When Ti is added, it complements the action of Au2 and further increases the
O1, S, and N are removed by the same action.
従って、内面がCaO質耐火材で構成された容器中で溶
製を行なうことにより、本発明の低0、低N含有量のク
ロム基合金を容易に得ることができる。Therefore, by performing melting in a container whose inner surface is made of a CaO-based refractory material, the chromium-based alloy of the present invention having a low zero content and a low N content can be easily obtained.
ところで、本発明においては、内面がCaO質耐火材で
構成された容器中にて溶製する際に、AuあるいはAu
2及びTiを冷却固化後のAu、Ti残留量が本発明の
範囲、即ち、Af11%以下あるいはAu21%以下及
びTi1%以下となるように添加するのそあるが、溶製
に用いる容器の内面を、特に電融カルシアよりなるもの
とすることにより、AnあるいはAu2及びTiの添加
により溶湯中へのCaの過剰のコンタミを低減し、得ら
れる合金中のCa含有量を容易に本発明の範囲即ち20
0ppm以下とすることができる。By the way, in the present invention, when melting is performed in a container whose inner surface is made of CaO-based refractory material, Au or Au
2 and Ti may be added so that the residual amounts of Au and Ti after cooling and solidification are within the range of the present invention, that is, Af 11% or less, Au 21% or less, and Ti 1% or less. In particular, by making molten calcia, excessive contamination of Ca into the molten metal can be reduced by adding An or Au2 and Ti, and the Ca content in the resulting alloy can be easily controlled within the range of the present invention. That is 20
It can be set to 0 ppm or less.
このようにして得られた合金溶湯を、常法に従って非酸
化性7囲気下で鋳造する。The molten alloy thus obtained is cast under a non-oxidizing atmosphere according to a conventional method.
この際、鋳造に用いる鋳型の材質としては、金型やAJ
12o3、ZrO2又はCaO質耐火材等が挙げられ、
これらのうち、とりわけCaO質耐火材が好適である。At this time, the material of the mold used for casting is the metal mold or AJ.
12o3, ZrO2 or CaO refractory materials, etc.
Among these, CaO-based refractory materials are particularly suitable.
このような方法によれば、A21%以下、場合によりT
i1%以下、CCa200pp以下、0O400pp以
下、NN200pP以下を含有し、残部が実質的にCr
である本発明の蒸着用クロム基合金を極めて容易に製造
することができる。According to such a method, A21% or less, and in some cases T
Contains i1% or less, CCa200pp or less, 0O400pp or less, NN200pP or less, and the remainder is substantially Cr.
The chromium-based alloy for vapor deposition of the present invention can be produced extremely easily.
[作用]
本発明の蒸着用クロム基合金は、0、N含有量が少ない
ため、高特性の薄膜を得ることができる。[Function] Since the chromium-based alloy for vapor deposition of the present invention has a low O and N content, a thin film with high characteristics can be obtained.
また、本発明の蒸着用クロム基合金に含有されるAfL
、Caは、真空蒸着又はスパッタリング等の蒸着τ囲気
中にて、
4AIt+302−2Au203
2 A JZ + N 2→2Aj2N2 Ca +
02 →2 Ca 0
3Ca+N2=Ca3N2
のように反応して、7囲気中のガス成分を低下させる、
いわゆるゲッタ作用を奏する。Furthermore, AfL contained in the chromium-based alloy for vapor deposition of the present invention
, Ca is deposited by vacuum evaporation or sputtering in an τ atmosphere as follows: 4AIt+302-2Au203 2 A JZ + N 2→2Aj2N2 Ca +
02 → 2 Ca 0 3Ca+N2=Ca3N2 Reacts as follows, lowering the gas components in the 7 atmosphere.
It has a so-called getter effect.
Tiについても同様にそれぞれA℃、Caの作用を下式
のように補完して良好なゲッタ作用を奏する。Similarly, Ti also exhibits a good getter effect by complementing the effects of A° C. and Ca as shown in the following equations.
Ti+0 2 →Ti02
T i +N2 →TiN 2
このため、蒸着時の薄膜形成安定性及び形成速度を向上
させると共に、得られる薄膜は高純度で耐食性、均質性
、平滑性が著しく良好で、緒特性が大幅に改善され、高
特性薄膜を高生産効率で製造することを可能とする。Ti+0 2 →Ti02 Ti +N2 →TiN 2 Therefore, the stability and formation rate of thin film formation during vapor deposition are improved, and the obtained thin film has high purity and excellent corrosion resistance, homogeneity, and smoothness, and has excellent properties. This has been greatly improved, making it possible to manufacture high-performance thin films with high production efficiency.
[実施例] 以下、実施例について説明する。[Example] Examples will be described below.
実施例1
第1表に示す組成のクロム基合金を蒸着用材料として用
い、下記仕様のスパッタリング装置にて、直径10cm
のガラス基盤上に薄膜を形成した。なお、基盤加熱温度
は80℃とした。Example 1 A chromium-based alloy having the composition shown in Table 1 was used as a material for vapor deposition, and a sputtering device with a diameter of 10 cm was used with the following specifications.
A thin film was formed on a glass substrate. Note that the substrate heating temperature was 80°C.
スパッタリング装置仕様
マグネトロンタイプ高周波スパッタリング装置最大圧カ
ニIKW
到達真空度: 10−’torr
ターゲット寸法:100mm(φ)x5mm(t)第1
表(Ca、 O,Nはl+I1m%他は%)スパッタ電
力を変えて、各蒸着用材料により形成された薄膜の膜厚
を調べた結果を、第1図、第2図に示す。Sputtering equipment specifications Magnetron type high frequency sputtering equipment Maximum pressure Kani IKW Ultimate vacuum: 10-'torr Target dimensions: 100mm (φ) x 5mm (t) 1st
Tables (Ca, O, N: l+I1m%; others: %) The results of examining the thickness of thin films formed with each vapor deposition material by varying the sputtering power are shown in FIGS. 1 and 2.
第1図、第2図より、本発明の蒸着用クロム基合金は、
バッチごとのバラツキが少なく均質な上に膜形成効率が
高いことが認められる。From FIG. 1 and FIG. 2, the chromium-based alloy for vapor deposition of the present invention is
It is recognized that there is little variation from batch to batch, the film is homogeneous, and the film formation efficiency is high.
実施例2
実施例1において得られた薄膜(膜厚:1μm程度のも
の)について、その表面粗さを調べ、その粗さ度の結果
を第2表に示した。Example 2 The surface roughness of the thin film (film thickness: approximately 1 μm) obtained in Example 1 was investigated, and the results of the roughness degree are shown in Table 2.
なお表面粗さの測定方法は触針1式粗さ測定法によるが
、表での粗さ表示は平均粗さと最大粗さについて調べた
。The surface roughness was measured using the stylus 1 type roughness measurement method, but the roughness displayed in the table was examined in terms of average roughness and maximum roughness.
* 平均粗さは平均厚みからの厚みのズレ(95%以内
)を示した。*The average roughness indicates the thickness deviation (within 95%) from the average thickness.
第2表より、本発明の合金により得られる薄膜は極めて
表面の平滑性が高いことが明らかである。From Table 2, it is clear that the thin films obtained using the alloys of the present invention have extremely high surface smoothness.
[発明の効果]
以上詳述した通り、本発明の蒸着用クロム基台金は、O
,N含有量が少ない上に、A℃、TiとCaによるゲッ
タ作用により、蒸着雰囲気中のガス成分が大幅に低減さ
れる。[Effects of the Invention] As detailed above, the chromium base metal for vapor deposition of the present invention has O
, N content is small, and the gas components in the vapor deposition atmosphere are significantly reduced due to the getter action of Ti and Ca.
このため、蒸着による膜形成安定性及び膜形成速度が向
上されるとともに、得られる薄膜は高純度で、耐食性、
均質性、平滑性の特性が著しく高いものとなる。Therefore, the film formation stability and film formation rate by vapor deposition are improved, and the obtained thin film has high purity, corrosion resistance,
The properties of homogeneity and smoothness are extremely high.
従って、本発明の蒸着用クロム基合金によれば、高特性
薄膜を高効率で得ることかでき、本発明の蒸着用クロム
基合金は、光磁気記録材料の保護や下地用薄膜製造用蒸
着材料として極めて有用である。Therefore, according to the chromium-based alloy for vapor deposition of the present invention, a thin film with high characteristics can be obtained with high efficiency. It is extremely useful as a
第1図及び第2図は実施例1で得られた結果を示すグラ
フであって、スパッタ電力と得られる膜厚との関係を示
す。1 and 2 are graphs showing the results obtained in Example 1, and show the relationship between the sputtering power and the film thickness obtained.
Claims (2)
00ppm以下、N200ppm以下を含有し、残部が
実質的にCrであることを特徴とする蒸着用クロム基合
金。(1) Al 1% by weight or less, Ca 200ppm or less, O4
00 ppm or less, N200 ppm or less, and the balance is substantially Cr.
0ppm以下、O400ppm以下、N200ppm以
下を含有し、残部が実質的にCrであることを特徴とす
る蒸着用クロム基合金。(2) Al 1% by weight or less, Ti 1% by weight or less, Ca20
A chromium-based alloy for vapor deposition, characterized in that it contains 0 ppm or less, 400 ppm or less of O, and 200 ppm or less of N, with the remainder being substantially Cr.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24095486A JPS6396261A (en) | 1986-10-09 | 1986-10-09 | Chromium-based alloy for vapor deposition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24095486A JPS6396261A (en) | 1986-10-09 | 1986-10-09 | Chromium-based alloy for vapor deposition |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6396261A true JPS6396261A (en) | 1988-04-27 |
JPH0359133B2 JPH0359133B2 (en) | 1991-09-09 |
Family
ID=17067121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24095486A Granted JPS6396261A (en) | 1986-10-09 | 1986-10-09 | Chromium-based alloy for vapor deposition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6396261A (en) |
-
1986
- 1986-10-09 JP JP24095486A patent/JPS6396261A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0359133B2 (en) | 1991-09-09 |
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