JPS6395630A - Manufacturing equipment for semiconductor device - Google Patents

Manufacturing equipment for semiconductor device

Info

Publication number
JPS6395630A
JPS6395630A JP24180286A JP24180286A JPS6395630A JP S6395630 A JPS6395630 A JP S6395630A JP 24180286 A JP24180286 A JP 24180286A JP 24180286 A JP24180286 A JP 24180286A JP S6395630 A JPS6395630 A JP S6395630A
Authority
JP
Japan
Prior art keywords
etching
carrier
semiconductor substrate
plane
etchant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24180286A
Other languages
Japanese (ja)
Inventor
Tomio Yamamoto
山本 冨男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP24180286A priority Critical patent/JPS6395630A/en
Publication of JPS6395630A publication Critical patent/JPS6395630A/en
Pending legal-status Critical Current

Links

Landscapes

  • Weting (AREA)

Abstract

PURPOSE:To make etchant spread over the whole fully and uniformly by causing a carrier housing a semiconductor substrate to be held in a state having an inclination so that etchant can run smoothly along an etching plane of the semiconductor substrate. CONSTITUTION:A mounting pedestal 1 is installed on the bottom of an etching vessel 5 where etchant 4 is housed and its upper plane is formed at an inclined plane 1a. The mounting pedestal 1 is used as a holder of a carrier and it supports the carrier 2 in a state having an inclination by supporting it at a protrusion 1b located at the end of the inclined plane 1a. Accordingly, the semiconductor substrate 3 in the carrier 2 that is in the state having the inclination is tilted in the same direction and the rear of its substrate is so in contact with one side of the inside walls of a groove 2a that a space of an etching plane side 3a becomes wider all the more. Its space condition permits etchant to improve its fluidity along the etching plane 3a and the whole plane is uniformly treated by etching.

Description

【発明の詳細な説明】 [産業上の利用分野コ 本発明は半導体装置の製造装置、特に半導体基板を薬品
によりエツチングする装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an apparatus for manufacturing semiconductor devices, and particularly to an apparatus for etching a semiconductor substrate with chemicals.

[従来の技術] 従来、半導体基板を薬品によりエツチングする場合、第
3図、第4図に示すように前記半導体基板3,3・・・
をキャリア2に垂直に立て、このキャリア2をエツチン
グ液4の入った槽5の台1或いはハンガー6に保持して
水平にセットしていた。
[Prior Art] Conventionally, when etching a semiconductor substrate with chemicals, as shown in FIGS. 3 and 4, the semiconductor substrates 3, 3, . . .
was placed vertically on a carrier 2, and this carrier 2 was held on a stand 1 or a hanger 6 in a tank 5 containing an etching solution 4 and set horizontally.

[発明が解決しようとする問題点] 半導体基板を薬品によりエツチングする場合、従来は前
記半導体基板をキャリアに垂直に立て、このキャリアを
エツチング液の入った装置に水平にセットしていたため
、半導体基板のエツチングしようとする面の周辺部とキ
ャリアの溝とのすき間がせまく、場合によっては溝に接
触してしまうため、粘度の高いエツチング液は十分にす
き間に入らず、又反応の激しいエツチング液の場合は泡
が付着する等のため、エツチングムラが発生するという
欠点があった。
[Problems to be Solved by the Invention] When etching a semiconductor substrate with chemicals, conventionally the semiconductor substrate was stood vertically on a carrier and the carrier was set horizontally in an apparatus containing an etching solution. The gap between the periphery of the surface to be etched and the groove of the carrier is narrow, and in some cases it may come into contact with the groove, so a highly viscous etching solution cannot fully enter the gap, and a highly reactive etching solution cannot be used. In this case, there was a drawback that uneven etching occurred due to the adhesion of bubbles.

本発明の目的は半導体基板のエツチングムラを防止する
半導体装置の製造装置を提供することにある。
An object of the present invention is to provide a semiconductor device manufacturing apparatus that prevents uneven etching of a semiconductor substrate.

[発明の従来技術に対する相違点] 上述した従来の装置に対し、本発明は半導体基板を収納
するキャリアをエツチング槽に斜めにセットすることに
より、半導体基板のエツチングしようとする面とキャリ
アの溝とのずき間を常時最大の状態に保つことができる
ため、粘度のおるエツチング液でもすぎ間に入りやすく
、又反応の激しいエツチング液の場合も泡が付着しにく
くなるという独創的内容を有する。
[Differences between the invention and the prior art] In contrast to the above-mentioned conventional apparatus, the present invention sets the carrier containing the semiconductor substrate obliquely in the etching bath, thereby making it possible to align the surface of the semiconductor substrate to be etched with the groove of the carrier. Since the gap can be maintained at the maximum at all times, even a highly viscous etching solution can easily enter the gap, and even a highly reactive etching solution can prevent bubbles from adhering, which is an original feature.

[問題点を解決するための手段] 本発明は半導体基板を共晶によりエツチングする装置に
おいて、半導体基板を垂直に立て掛けて収納するキャリ
アをエツチング槽内に傾斜姿勢に保持させる保持具を具
備したことを特徴とする半導体装置の製造装置でおる。
[Means for Solving the Problems] The present invention provides an apparatus for etching a semiconductor substrate by eutectic etching, which is equipped with a holder for holding a carrier in which a semiconductor substrate is vertically propped up and held in an inclined position in an etching tank. This is a semiconductor device manufacturing apparatus characterized by:

[作 用] 前述のようにウェハー収納用キャリア2は半導体基板3
を1■合保持する溝28を上下方向に設け、各溝2a内
に半導体基板3を垂直に立て掛けて並行に保持するもの
である。したがって、第3図に示すようにキャリア2を
水平にセットした場合には半導体基板3は垂直に立て掛
けられるから、半導体基板3は溝2aのほぼ中央部分に
位置し、半導体基板の両側に隙間が形成されるから、半
導体基板3のエツチング面3aと、2742 aの内壁
2b間の隙間が狭くなる。第1図に示すようにキャリア
2を傾斜させて半導体基板3のエツチング面3aと反対
の裏面を$2aの一方の内壁2bに接触させると、半導
体基板3の裏面側の隙間がなくなり、その分生導体基板
3のエツチング面側の隙間が広くなる。
[Function] As mentioned above, the wafer storage carrier 2 holds the semiconductor substrate 3.
Grooves 28 are provided in the vertical direction for holding the semiconductor substrates 2a in parallel with each other, and the semiconductor substrates 3 are vertically placed in each groove 2a and held in parallel. Therefore, when the carrier 2 is set horizontally as shown in FIG. 3, the semiconductor substrate 3 is placed vertically, so the semiconductor substrate 3 is located approximately at the center of the groove 2a, and there is a gap on both sides of the semiconductor substrate. As a result, the gap between the etched surface 3a of the semiconductor substrate 3 and the inner wall 2b of the semiconductor substrate 3 becomes narrower. As shown in FIG. 1, when the carrier 2 is tilted and the back surface of the semiconductor substrate 3 opposite to the etched surface 3a is brought into contact with one inner wall 2b of the $2a, the gap on the back surface side of the semiconductor substrate 3 is eliminated, and the gap is removed by that amount. The gap on the etched surface side of the raw conductor substrate 3 becomes wider.

[実施例] 以下に本発明の実施例を図によって説明する。[Example] Embodiments of the present invention will be described below with reference to the drawings.

(実施例1) 第1図に示すように本実施例ではエツチング液4を収納
するエツチング槽5の底部に設けた搭載台1の上面を傾
斜面1aに形成し、搭載台1をキャリアの保持具として
、キャリア2を搭載台1の傾斜面1aと傾斜面1aの末
端に位置する突部1bとで支えて該キャリア2を傾斜姿
勢に保持するものである。傾斜面1aは例えば10〜1
5°に設置する。これによって傾斜姿勢のキャリア2内
の半導体基板3は同方向に傾むき、その裏面は溝2aの
一方の内壁2bに接触するため、その分生導体基板3の
表面すなわちエツチング面3a側の隙間が広くなり、し
たがって半導体基板3のエツチング面3aに沿うエツチ
ング液の流動性がよくなり、基板3のエツチング面3a
の全面が均一にエツチング処理されることとなる。
(Example 1) As shown in FIG. 1, in this example, the upper surface of the mounting table 1 provided at the bottom of the etching tank 5 that stores the etching liquid 4 is formed into an inclined surface 1a, and the mounting table 1 is used to hold the carrier. As a tool, the carrier 2 is supported by the inclined surface 1a of the mounting base 1 and the protrusion 1b located at the end of the inclined surface 1a to hold the carrier 2 in an inclined posture. The slope 1a is, for example, 10 to 1
Set at 5°. As a result, the semiconductor substrates 3 in the inclined carrier 2 are tilted in the same direction, and their back surfaces contact one of the inner walls 2b of the grooves 2a. Therefore, the fluidity of the etching solution along the etching surface 3a of the semiconductor substrate 3 is improved, and the etching surface 3a of the substrate 3 becomes wider.
The entire surface will be uniformly etched.

(実施例2) 第2図は本発明の第2の実施例を示すものである。(Example 2) FIG. 2 shows a second embodiment of the invention.

本実施例はハンガーを保持具として用い、半導体基板を
収納したキャリア3をハンガー6に保持してエツチング
槽5内にセットする構造の例を示すものである。本実施
例ではハンガー6の一方の腕6aを他方の腕6bより下
方に向けて延長し、長短2本の腕6a、 6bの下端で
キャリア2の両側端を支えて該キャリアを10〜15°
の傾斜姿勢に保持するものである。本実施例ではキャリ
ア2を懸架している以外は第1の実施例と同様の効果を
得ることができる。
This embodiment shows an example of a structure in which a hanger is used as a holder, and a carrier 3 containing a semiconductor substrate is held by a hanger 6 and set in an etching tank 5. In this embodiment, one arm 6a of the hanger 6 is extended downward from the other arm 6b, and the lower ends of the two long and short arms 6a, 6b support both ends of the carrier 2, tilting the carrier 2 at an angle of 10 to 15 degrees.
The device is held in a tilted position. In this embodiment, the same effects as in the first embodiment can be obtained except that the carrier 2 is suspended.

[発明の効果コ 本発明は以上説明したように半導体基板を収納したキャ
リアを傾斜姿勢に保持し半導体基板のエツチング面に沿
うエツチング液の流動性をよくしたので、半導体基板の
エツチング面の全面に亘ってエツチング液が十分にゆき
わたり、均一にエツチングできる効果を有するものでお
る。
[Effects of the Invention] As explained above, the present invention maintains the carrier containing the semiconductor substrate in an inclined position and improves the fluidity of the etching solution along the etching surface of the semiconductor substrate. This has the effect that the etching solution can be sufficiently spread over the entire area and can be etched uniformly.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図、第2図は本発明の実施例を示す断面図、第3図
、第4図は従来例を示す断面図でおる。
1 and 2 are sectional views showing an embodiment of the present invention, and FIGS. 3 and 4 are sectional views showing a conventional example.

Claims (1)

【特許請求の範囲】[Claims] (1)半導体基板を薬品によりエッチングする装置にお
いて、半導体基板を垂直に立て掛けて収納するキャリア
をエッチング槽内に傾斜姿勢に保持させる保持具を具備
したことを特徴とする半導体装置の製造装置。
(1) A semiconductor device manufacturing apparatus for etching a semiconductor substrate with chemicals, characterized in that the apparatus is equipped with a holder for holding a carrier in which a semiconductor substrate is vertically propped up and held in an inclined position in an etching tank.
JP24180286A 1986-10-11 1986-10-11 Manufacturing equipment for semiconductor device Pending JPS6395630A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24180286A JPS6395630A (en) 1986-10-11 1986-10-11 Manufacturing equipment for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24180286A JPS6395630A (en) 1986-10-11 1986-10-11 Manufacturing equipment for semiconductor device

Publications (1)

Publication Number Publication Date
JPS6395630A true JPS6395630A (en) 1988-04-26

Family

ID=17079725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24180286A Pending JPS6395630A (en) 1986-10-11 1986-10-11 Manufacturing equipment for semiconductor device

Country Status (1)

Country Link
JP (1) JPS6395630A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007180067A (en) * 2005-12-26 2007-07-12 Kyocera Corp Manufacturing method of solar battery element
US7581551B2 (en) * 2004-09-01 2009-09-01 Sanyo Electric Co., Ltd. Cleaning apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7581551B2 (en) * 2004-09-01 2009-09-01 Sanyo Electric Co., Ltd. Cleaning apparatus
JP2007180067A (en) * 2005-12-26 2007-07-12 Kyocera Corp Manufacturing method of solar battery element

Similar Documents

Publication Publication Date Title
KR19990040889A (en) Glass substrate cassette
JPS6395630A (en) Manufacturing equipment for semiconductor device
WO2021049145A1 (en) Substrate holder, substrate plating device equipped therewith, and electrical contact
JP3174496B2 (en) Semiconductor wafer holding jig
JPH11297808A (en) Carrier for discoidal work
JPH1059454A (en) Containing and retaining device for board
JP2009062608A (en) Vapor deposition apparatus
JPH0353393B2 (en)
KR100227645B1 (en) Coating apparatus
JP2967895B2 (en) Semiconductor wafer holding device
JPH0383730A (en) Method for carrying in and out plate-shaped body
JP3875435B2 (en) Substrate support mechanism
JPH1140533A (en) Method of cleaning wafer and wafer cleaning equipment
JPH0541704B2 (en)
KR101450710B1 (en) Method for Producing substrate boat
JPH07176512A (en) Spin-dryer device
KR0114985Y1 (en) Cassette chuck
KR100308185B1 (en) Wafer level suppporting apparatus
JPH0350753A (en) Wafer carrier
JPH11130252A (en) Substrate holder
JPS62132325A (en) Etching method for wafer and wafer carrier used therefor
JP2957363B2 (en) Semiconductor manufacturing cassette
JPH10279011A (en) Cassette for base
JPH11135606A (en) Wafer carrier for wafer cleaning
JPS62221117A (en) Support electrode