JPS63948B2 - - Google Patents
Info
- Publication number
- JPS63948B2 JPS63948B2 JP54029935A JP2993579A JPS63948B2 JP S63948 B2 JPS63948 B2 JP S63948B2 JP 54029935 A JP54029935 A JP 54029935A JP 2993579 A JP2993579 A JP 2993579A JP S63948 B2 JPS63948 B2 JP S63948B2
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- wire
- ball
- gas
- aluminum wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007789 gas Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 description 14
- 229910052739 hydrogen Inorganic materials 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000001603 reducing effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 241000587161 Gomphocarpus Species 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/78268—Discharge electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78313—Wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】
この発明は、アルミニウム線端のボール形成方
法にかかり、特にアルミニウム線端に酸化なく加
熱を施しボールを形成する方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming a ball at the end of an aluminum wire, and more particularly to a method for forming a ball by heating the end of an aluminum wire without oxidizing it.
一般に、半導体装置の製造における電気的接
続、とりわけ、電極間接続、電極導出等のために
金線を用いてワイヤボンデイングが実施されてい
る。上記金線を用いて行なうボンデイング方法と
して、ボールボンデイング法（またはネイルヘツ
ドボンデイング法）がある。これは第１図ないし
第５図に示すように、ボンデイングキヤピラリ１
から導出された金のボンデイングワイヤ２の端末
（前のボンデイングの結果切断されて遊端に形成
される。）にガスバーナ３を近接させ（第１図）、
溶融させてボール部２ａを形成する（第２図）。
ついで、ボンデイングキヤピラリ１が下降し予め
加熱された半導体素子電極４との間に前記ボール
部２ａを圧接変形せしめて円板部２a′を形成し、
第１次ボンデイングが達成される（第３図）。つ
いで、ボンデイングキヤピラリ１を上昇せしめる
と同時にボンデイング被体を横方向に変位させ
（第４図）、ボンデイングポスト５（第４図）をボ
ンデイングキヤピラリの直下に定位させて、第２
次ボンデイングが施される（図示省略）。なお、
第５図には上記第１次ボンデイングが施された半
導体素子電極部の上面図を示す。上述のボールボ
ンデイングにおけるボンデイングワイヤ端末のボ
ール部形成のための溶融は、ボンデイングワイヤ
が金に限定されるため酸化を生ずることなく美麗
かつ所望の形状に形成できるので、ボンデイング
が容易であると同時にボンデイング強度が大で、
さらに狭い部位にボンデイングが可能であるなど
の利点も有するが、ボンデイング被体の加熱温度
が比較的高い（250℃〜400℃）ために半導体素子
の電気的特性を損ずる欠点、また、金が高価であ
る欠点などがある。 Wire bonding is generally performed using gold wire for electrical connections in the manufacture of semiconductor devices, particularly for connections between electrodes, electrode derivation, and the like. A ball bonding method (or nail head bonding method) is a bonding method using the gold wire. This is the bonding capillary 1 as shown in Figures 1 to 5.
A gas burner 3 is brought close to the end of the gold bonding wire 2 (cut as a result of the previous bonding and formed as a free end) (FIG. 1).
The ball portion 2a is formed by melting (FIG. 2).
Next, the bonding capillary 1 is lowered to press and deform the ball portion 2a between it and the preheated semiconductor element electrode 4 to form a disk portion 2a'.
Primary bonding is achieved (Figure 3). Next, while raising the bonding capillary 1, the bonding object is laterally displaced (FIG. 4), the bonding post 5 (FIG. 4) is positioned directly below the bonding capillary, and the second
Next, bonding is performed (not shown). In addition,
FIG. 5 shows a top view of the semiconductor element electrode portion to which the above-mentioned primary bonding has been performed. In the above-mentioned ball bonding, the bonding wire is melted to form a ball portion at the end of the bonding wire, and since the bonding wire is limited to gold, it can be formed into a beautiful and desired shape without causing oxidation. It has great strength,
Furthermore, it has the advantage that bonding can be performed in a narrow area, but the disadvantage is that the heating temperature of the bonding object is relatively high (250°C to 400°C), which impairs the electrical characteristics of the semiconductor element, and gold is expensive. There are some drawbacks.
そこで、廉価なアルミニウム線によりボンデイ
ングを施す方法として超音波ボンデイング法が多
く用いられている。これは第６図に示すように、
半導体素子電極４の上面に平行にボンデイングワ
イヤ１２の端部を配置し、これに第７図に示すワ
イヤ溝６ａを有するウエツジ６にて圧接する。前
記ウエツジは30〜60kHzの超音波ホーン７に接続
され超音波ボンデイングが達成されるものであ
る。上述の超音波ボンデイング法にはボンデイン
グワイヤが廉価である利点と、ボンデイング被体
の加熱温度が低く（常温ないし150℃）てよい利
点はあるも、ボンデイング強度がやゝ低い欠点
と、ボンデイングに要するスペースが大きいとい
う欠点がある。すなわち、第８図はボンデイング
部の上面図、第９図はボンデイング被体の一例の
半導体素子電極４にボンデイングワイヤ１２をボ
ンデイングした状態を示す斜視図にて、両図中１
２′ａはボンデイングワイヤの変形部を示す。ま
た、第１０図にはボールボンデイング法（図中破
線表示）と超音波ボンデイング法（図中実線表
示）とのそれぞれが占有するスペースを比較して
示し、ボールボンデイングによるものは径が
（ｌ）であるのに対し、超音波ボンデイングによ
るものは長さが（l′）で明らかにｌ＜l′と超音波
ボンデイングの方が大きく、半導体装置の小型化
ないし高密度化に支障がある。しかも、超音波ボ
ンデイングの場合には、ウエツジにおけるワイヤ
溝によつてボンデイングの方向性が平面内の一方
向に限定される。このためボンデイングパツトが
放射状に配置された半導体素子に対しては著るし
く不適である欠点もある。 Therefore, an ultrasonic bonding method is often used as a method of bonding using an inexpensive aluminum wire. This is shown in Figure 6,
The end of the bonding wire 12 is arranged parallel to the upper surface of the semiconductor element electrode 4, and is pressed into contact therewith with a wedge 6 having a wire groove 6a shown in FIG. The wedge is connected to an ultrasonic horn 7 of 30 to 60 kHz to achieve ultrasonic bonding. The above-mentioned ultrasonic bonding method has the advantage that the bonding wire is inexpensive and the heating temperature of the bonding object is low (room temperature to 150℃), but the disadvantage is that the bonding strength is rather low and the bonding time is high. The disadvantage is that it takes up a lot of space. That is, FIG. 8 is a top view of the bonding part, and FIG. 9 is a perspective view showing a state in which the bonding wire 12 is bonded to the semiconductor element electrode 4, which is an example of the bonding object.
2'a indicates a deformed portion of the bonding wire. In addition, Fig. 10 shows a comparison of the space occupied by the ball bonding method (indicated by a broken line in the figure) and the space occupied by the ultrasonic bonding method (indicated by a solid line in the figure). On the other hand, in the case of ultrasonic bonding, the length (l') is clearly larger as l<l', which poses a problem in miniaturizing or increasing the density of semiconductor devices. Moreover, in the case of ultrasonic bonding, the directionality of bonding is limited to one direction within a plane due to the wire groove in the wedge. For this reason, it has the disadvantage that it is extremely unsuitable for semiconductor devices in which bonding pads are arranged radially.
この発明は、上記従来の欠点に対し、これを改
良するアルミニウム線端におけるボール形成方法
を提供するものであつて、この発明にかゝるアル
ミニウム線端のボール形成方法は、アルミニウム
線端を不活性ガスと還元性ガスである水素ガスと
の混合気体により覆うとともに、上記混合気体に
より覆われたアルミニウム線端に電気トーチを非
接触で近接させ、上記電気トーチと上記アルミニ
ウム線端に放電を生じさせることにより上記アル
ミニウム線端にボールを形成するものであり、さ
らに混合気体中の水素ガス含量が５〜15容量％の
範囲内にあることを特徴とするものである。 The present invention provides a method for forming a ball at the end of an aluminum wire that improves the above-mentioned conventional drawbacks. The aluminum wire is covered with a mixture of active gas and hydrogen gas, which is a reducing gas, and an electric torch is brought close to the end of the aluminum wire covered with the mixture without contact, causing an electric discharge between the electric torch and the end of the aluminum wire. By doing so, a ball is formed at the end of the aluminum wire, and the hydrogen gas content in the mixed gas is in the range of 5 to 15% by volume.
以下、この発明を半導体装置の製造における一
実施例のアルミニウム線端におけるボール形成方
法につき詳細に説明する。なお、以下の説明にお
いては、上記従来の技術の説明にて用いた図面中
の部分と同一部分には同一記号を符してある。 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with regard to a method for forming balls at the ends of aluminum wires as an embodiment of the present invention in the manufacture of semiconductor devices. In the following description, the same parts as those in the drawings used in the description of the above-mentioned conventional technology are designated by the same symbols.
第１１図にボール形成工程を断面図示するもの
において、１はボンデイングキヤピラリ、１２は
前記ボンデイングキヤピラリ１に挿通したアルミ
ニウムのボンデイングワイヤ、１０は電気トーチ
の放電端子であつてボンデイングワイヤとの遊端
との間に放電を生じさせるための所要の電圧（パ
ルス）が印加される、２０は雰囲気ガス放射管で
ある。そして、雰囲気ガス放射管２０より酸化防
止のための雰囲気ガスを放射し、少なくともボン
デイングワイヤ１２の遊端の溶融予定部を前記雰
囲気ガス中に置く。ここで、上記雰囲気ガスは、
水素が容量で１〜50％の範囲を占めるアルゴン
（不活性ガス）との混合気体がよく、とりわけ水
素含量５〜15％（容量）、残部アルゴンの混合気
体が好適である。すなわち、ボンデイング工程に
おいて雰囲気形成のため噴射される上記混合ガス
が外側の雰囲気を巻きこみ部分的に稀薄になるな
どの経験から還元性を維持できる最低水素容量を
５容量％に設定し、かつ水素の混合気体による爆
発の限界を考慮して最高水素容量を15容量％に設
定して有効化、安全化をはかるものである。かく
て、上記還元性の混合気体中に置かれたボンデイ
ングワイヤ１２遊端に電気トーチの放電端子１０
を非接触で近接させ、ボンデイングワイヤ１２遊
端と放電端子１０との間にトーチ電圧（電圧値
(E)）を印加し、両者間に放電を生じさせる。する
と、ボンデイングワイヤ１２遊端は加熱されて溶
融し、ボール部１２ａが形成される。ついで、ボ
ンデイングキヤピラリ１が下降し、予め加熱され
た半導体素子電極４との間にボール部１２ａを円
板状に圧接変形させ、第１次ボンデイングを達成
する。この第１次ボンデイングにおいて、溶融し
ているボール部１２ａの表面には、わずかである
が酸化皮膜が形成される。すなわち、アルゴン中
に含まれる微量の酸素の存在、ボンデイングワイ
ヤ１２を加熱することによつてこのボンデイング
ワイヤに吸着されている酸素の放出、あるいは不
活性ガスの擾乱による酸素の巻き込み等により、
溶融ボール部１２ａ表面に酸化皮膜が形成されて
しまう。もし、水素が雰囲気ガス中に含有されて
いない場合は、酸化皮膜被着のままでボンデイン
グを行うことになり、ボンデイング特性が著しく
劣化してしまう。しかし、本実施例においては、
不活性ガス中に水素が含有されているので、ボー
ル部１２ａ表面に形成された酸化皮膜は還元・除
去され酸化されない真球型のボールを得ることが
できる。したがつて、ボンデイング強度にすぐれ
た信頼性の高いボンデイングを行うことができ
る。ちなみに、雰囲気ガスとして、アルゴン単独
の場合と、水素を含有させた場合とを比較するた
めに、ボンデイング後のワイヤの引張破断試験
（200個）を行つたところ、第１２図に示すような
結果を得た。すなわち、アルゴン単独の場合で
は、破断モードひん度（ワイヤ引張試験で、ワイ
ヤの部分から破断したもの、つまりワイヤが完全
にボンデイングされているものの割合のことをい
う。）はわずかに10％であるのに対して、水素が
10容量％含有されている場合の破断モードひん度
は90％、及び水素が15容量％含有されている場合
の破断モードひん度は98％となつている。このよ
うに水素を不活性ガスに含有させることにより、
ボンデイング強度が顕著に向上することが認めら
れた。 In FIG. 11, which shows a cross-sectional view of the ball forming process, 1 is a bonding capillary, 12 is an aluminum bonding wire inserted into the bonding capillary 1, and 10 is a discharge terminal of an electric torch, which has no play with the bonding wire. Reference numeral 20 denotes an atmospheric gas emitting tube, to which a necessary voltage (pulse) for causing a discharge is applied between the two ends. Then, atmospheric gas for preventing oxidation is emitted from the atmospheric gas radiation tube 20, and at least the free end portion of the bonding wire 12 to be melted is placed in the atmospheric gas. Here, the above atmospheric gas is
A mixed gas containing hydrogen and argon (an inert gas) in a range of 1 to 50% by volume is preferred, and a mixed gas containing 5 to 15% (by volume) of hydrogen and the balance being argon is particularly preferred. That is, based on experience that the above-mentioned mixed gas injected to form an atmosphere in the bonding process entrains the outside atmosphere and becomes partially diluted, the minimum hydrogen capacity that can maintain reducing properties is set at 5% by volume, and the hydrogen Considering the limit of explosion due to mixed gases, the maximum hydrogen capacity is set at 15% by volume to ensure effectiveness and safety. Thus, the discharge terminal 10 of the electric torch is attached to the free end of the bonding wire 12 placed in the reducing gas mixture.
are placed close to each other without contact, and a torch voltage (voltage value) is applied between the free end of the bonding wire 12 and the discharge terminal 10.
(E)) is applied to generate a discharge between the two. Then, the free end of the bonding wire 12 is heated and melted, forming a ball portion 12a. Next, the bonding capillary 1 is lowered, and the ball part 12a is pressed into a disc shape between it and the preheated semiconductor element electrode 4, thereby achieving primary bonding. In this first bonding, a slight oxide film is formed on the surface of the melted ball portion 12a. That is, due to the presence of a trace amount of oxygen contained in argon, the release of oxygen adsorbed by the bonding wire 12 by heating it, or the entrainment of oxygen due to disturbance of inert gas, etc.
An oxide film is formed on the surface of the molten ball portion 12a. If hydrogen is not contained in the atmospheric gas, bonding will be performed with the oxide film still attached, resulting in a significant deterioration of bonding characteristics. However, in this example,
Since hydrogen is contained in the inert gas, the oxide film formed on the surface of the ball portion 12a is reduced and removed, making it possible to obtain a true spherical ball that is not oxidized. Therefore, highly reliable bonding with excellent bonding strength can be performed. By the way, in order to compare the case of using argon alone and the case of containing hydrogen as the atmosphere gas, we conducted a tensile break test (200 wires) after bonding, and the results are shown in Figure 12. I got it. In other words, in the case of argon alone, the fracture mode frequency (referring to the percentage of wires that break from a portion of the wire in a wire tensile test, that is, the wire is completely bonded) is only 10%. On the other hand, hydrogen
The fracture mode frequency is 90% when hydrogen is contained at 10% by volume, and 98% when hydrogen is contained at 15% by volume. By incorporating hydrogen into the inert gas in this way,
It was observed that the bonding strength was significantly improved.
以上のように、本発明はワイヤ先端に形成され
た溶融ボールの酸化を防止するのみならず、溶融
ボール表面に形成された酸化皮膜を除去する積極
的作用を有し、アルミニウム線端に酸化されない
真球型のボールを形成できるので、高価な金のボ
ンデイングワイヤを用いることなく、実用上十分
なボンデイング強度でワイヤボンデイングするこ
とができる。しかも、超音波を利用したアルミニ
ウム線のボンデイングに比べて、設備が簡単でボ
ンデイングに要するスペースが少なくてすむとと
もに、ボンデイング方位が限定されない利点を有
する。 As described above, the present invention not only prevents the oxidation of the molten ball formed at the tip of the wire, but also has an active effect of removing the oxide film formed on the surface of the molten ball, so that the end of the aluminum wire is not oxidized. Since a true spherical ball can be formed, wire bonding can be performed with practically sufficient bonding strength without using expensive gold bonding wire. Furthermore, compared to aluminum wire bonding using ultrasonic waves, this method has the advantage that the equipment is simple, less space is required for bonding, and the bonding direction is not limited.
第１図ないし第５図はボールボンデイング法を
示す説明図、第６図ないし第９図は超音波ボンデ
イング法を示す説明図、第１０図はボールボンデ
イングと超音波ボンデイングとのスペース面積の
差異を示す側面図、第１１図は本発明の一実施例
のアルミニウム線端のボール形成方法の説明図、
第１２図は雰囲気ガスとして水素を含有する場合
及び含有しない場合の破断モードひん度を示すグ
ラフである。
１：ボンデイングキヤピラリ、２：半導体素子
電極、１０：放電端子、１２：ボンデイングワイ
ヤ、１２ａ：ボール部、２０：雰囲気ガス放射
管。
Figures 1 to 5 are explanatory diagrams showing the ball bonding method, Figures 6 to 9 are explanatory diagrams showing the ultrasonic bonding method, and Figure 10 is an illustration showing the difference in space area between ball bonding and ultrasonic bonding. 11 is an explanatory diagram of a method of forming a ball at the end of an aluminum wire according to an embodiment of the present invention,
FIG. 12 is a graph showing the fracture mode frequency when hydrogen is contained as an atmospheric gas and when hydrogen is not contained. 1: Bonding capillary, 2: Semiconductor element electrode, 10: Discharge terminal, 12: Bonding wire, 12a: Ball portion, 20: Atmosphere gas emission tube.
Claims (1)
の混合気体により覆う方法と、上記混合気体によ
り覆われたアルミニウム線端にトーチを近接させ
て上記アルミニウム線端を加熱して溶融させるこ
とにより上記アルミニウム線端にボールを形成す
る方法とを具備することを特徴とするアルミニウ
ム線端のボール形成方法。 ２ 混合気体中の水素ガス含量が５〜15容量％の
範囲内にあることを特徴とする特許請求の範囲第
１項記載のアルミニウム線端のボール形成方法。[Claims] 1. A method of covering the end of the aluminum wire with a gas mixture of an inert gas and hydrogen gas, and heating the end of the aluminum wire by bringing a torch close to the end of the aluminum wire covered with the mixed gas. A method for forming a ball at the end of an aluminum wire, comprising: forming a ball at the end of the aluminum wire by melting the aluminum wire. 2. The method of forming a ball at the end of an aluminum wire according to claim 1, wherein the hydrogen gas content in the mixed gas is in the range of 5 to 15% by volume.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2993579A JPS55123198A (en) | 1979-03-16 | 1979-03-16 | Method of forming ball of aluminum wire end |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2993579A JPS55123198A (en) | 1979-03-16 | 1979-03-16 | Method of forming ball of aluminum wire end |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55123198A JPS55123198A (en) | 1980-09-22 |
| JPS63948B2 true JPS63948B2 (en) | 1988-01-09 |
Family
ID=12289836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2993579A Granted JPS55123198A (en) | 1979-03-16 | 1979-03-16 | Method of forming ball of aluminum wire end |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55123198A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58169918A (en) * | 1982-03-31 | 1983-10-06 | Hitachi Ltd | Wire bonder |
| US4476365A (en) * | 1982-10-08 | 1984-10-09 | Fairchild Camera & Instrument Corp. | Cover gas control of bonding ball formation |
| JPS61253824A (en) * | 1985-05-02 | 1986-11-11 | Toshiba Corp | Semiconductor element assembling method |
| JP2645014B2 (en) * | 1987-05-27 | 1997-08-25 | 株式会社日立製作所 | Wire bonding equipment |
| JPH01280330A (en) * | 1989-03-31 | 1989-11-10 | Hitachi Ltd | Semiconductor device |
-
1979
- 1979-03-16 JP JP2993579A patent/JPS55123198A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55123198A (en) | 1980-09-22 |
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