JPS639285B2 - - Google Patents
Info
- Publication number
- JPS639285B2 JPS639285B2 JP56203569A JP20356981A JPS639285B2 JP S639285 B2 JPS639285 B2 JP S639285B2 JP 56203569 A JP56203569 A JP 56203569A JP 20356981 A JP20356981 A JP 20356981A JP S639285 B2 JPS639285 B2 JP S639285B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- magnetoresistive element
- magnetoresistive
- magnetic field
- symmetrical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001514 detection method Methods 0.000 claims description 13
- 230000007423 decrease Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 description 28
- 230000005415 magnetization Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 230000004907 flux Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000005330 Barkhausen effect Effects 0.000 description 4
- 230000005381 magnetic domain Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3945—Heads comprising more than one sensitive element
- G11B5/3948—Heads comprising more than one sensitive element the sensitive elements being active read-out elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3945—Heads comprising more than one sensitive element
- G11B5/3948—Heads comprising more than one sensitive element the sensitive elements being active read-out elements
- G11B5/3958—Heads comprising more than one sensitive element the sensitive elements being active read-out elements the active elements being arranged in a single plane, e.g. "matrix" disposition
- G11B5/3961—Heads comprising more than one sensitive element the sensitive elements being active read-out elements the active elements being arranged in a single plane, e.g. "matrix" disposition disposed at an angle to the direction of the track or relative movement
- G11B5/3964—Heads comprising more than one sensitive element the sensitive elements being active read-out elements the active elements being arranged in a single plane, e.g. "matrix" disposition disposed at an angle to the direction of the track or relative movement for transducing on a single track
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/398—Specially shaped layers
Description
【発明の詳細な説明】
本発明は磁気抵抗効果型磁気ヘツドに係り、記
録媒体からの磁場を導く為の磁極と、非一直線状
で、左右対称な形に構成した前記磁極の間に接続
して設けた単一部材からなる磁気抵抗素子と、こ
の左右対称な形の磁気抵抗素子の対称中央部及び
端部に設けた信号検出用電極と、前記磁気抵抗素
子に信号検出用電流が流され、かつ、記録媒体か
らの磁場が加わつた際に、左右対称な磁気抵抗素
子の一方においては磁気抵抗が増大し、他方にお
いてはこの増大分と同じ分だけ減少するようにな
るバイアス磁場が磁気抵抗素子に印加されるバイ
アス磁場印加手段とを備えた構成とすることによ
つて、ノイズの少ない、特に熱ノイズによる悪影
響を防止でき、又、磁気抵抗素子の磁区構造が単
純になり、バルクハウゼンノイズも起きにくくな
り、しかも部品点数が少なくてすみ、構成も簡単
なものになる磁気抵抗効果型磁気ヘツドを提供す
ることを目的とする。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetoresistive magnetic head, in which a magnetic head is connected between a magnetic pole for guiding a magnetic field from a recording medium and a non-linear, symmetrical magnetic pole. a magnetoresistive element made of a single member provided with a magnetoresistive element, signal detection electrodes provided at the symmetrical center and ends of the symmetrical magnetoresistive element, and a signal detection current flowing through the magnetoresistive element. , and when a magnetic field from the recording medium is applied, the magnetic resistance increases in one side of the symmetrical magnetoresistive element and decreases by the same amount as this increase in the other side.The bias magnetic field is called magnetic resistance. By adopting a configuration including a bias magnetic field applying means applied to the element, it is possible to reduce noise, particularly to prevent the adverse effects of thermal noise, and the magnetic domain structure of the magnetoresistive element is simple, reducing Barkhausen noise. To provide a magnetoresistive magnetic head which is less likely to occur, requires fewer parts, and has a simple configuration.
従来、磁気抵抗効果型磁気ヘツドは、例えば第
１図に示す如く、非磁性基板１上に磁極となる磁
性膜２が設けられ、記録媒体摺接面側の磁性膜２
上に非磁性絶縁層３が設けられ、この非磁性絶縁
層３と非磁性基板１上にまたがつて磁極となる磁
性膜４が設けられ、磁性膜２と４とが磁気抵抗素
子５によつて接続された構成となつている。尚、
６は磁気抵抗素子５に適当なバイアス磁場を与え
る為のバイアス磁場用導電膜であり、７，８は信
号検出用導電膜、９，１０はその端子である。 Conventionally, in a magnetoresistive magnetic head, as shown in FIG. 1, for example, a magnetic film 2 serving as a magnetic pole is provided on a non-magnetic substrate 1, and a magnetic film 2 on the side of the recording medium sliding surface is provided.
A non-magnetic insulating layer 3 is provided thereon, a magnetic film 4 serving as a magnetic pole is provided astride the non-magnetic insulating layer 3 and the non-magnetic substrate 1, and the magnetic films 2 and 4 are connected by a magnetoresistive element 5. The configuration is such that they are connected together. still,
6 is a conductive film for a bias magnetic field for applying an appropriate bias magnetic field to the magnetoresistive element 5, 7 and 8 are conductive films for signal detection, and 9 and 10 are terminals thereof.
これは、磁気抵抗素子が磁気テープ等の記録媒
体に直接摺接する構成となつていると、記録媒体
との摩擦熱によつて磁気抵抗素子の温度が不規則
に変化し、これによつて磁気抵抗素子の抵抗値が
変化し、これが信号に重畳され、いわゆる熱雑音
となるのを防止しようとしているのであるが、す
なわち記録媒体との摺接摩擦熱による悪影響を防
止しようとして、記録媒体接触面から磁気抵抗素
子を遠ざけるようにしたのであるが、これでも基
板や磁極を通して摩擦熱が伝わり、又バイアス磁
場用導電膜から生じる熱が伝わり、熱雑音の発生
を充分には除去できていない。 This is because if the magnetoresistive element is configured to be in direct sliding contact with a recording medium such as a magnetic tape, the temperature of the magnetoresistive element changes irregularly due to frictional heat with the recording medium, and this causes the magnetic This is intended to prevent the resistance value of the resistance element from changing and being superimposed on the signal, resulting in so-called thermal noise. However, frictional heat is still transmitted through the substrate and magnetic poles, and heat generated from the conductive film for the bias magnetic field is also transmitted, and thermal noise cannot be sufficiently eliminated.
本発明は上記欠点を除去したものであり、以下
その実施例について説明する。 The present invention eliminates the above-mentioned drawbacks, and examples thereof will be described below.
第２図は本発明に係る磁気抵抗効果型磁気ヘツ
ドの１実施例の説明図、第３図は第２図における
Ｘ−Ｘ線部の断面説明図である。 FIG. 2 is an explanatory view of one embodiment of the magnetoresistive magnetic head according to the present invention, and FIG. 3 is an explanatory cross-sectional view taken along the line X--X in FIG.
同図中、２０は非磁性の基板であり、この基板
２０上に例えば角度が約90゜の左右対称な略Ｖ形
状に単一部材で構成された磁気抵抗素子２１が設
けられており、この磁気抵抗素子２１の中央部か
ら引き出される信号検出用の導電膜２２が設けら
れている。尚、２３は導電膜２２の端子である。 In the figure, reference numeral 20 denotes a non-magnetic substrate, and on this substrate 20, a magnetoresistive element 21 made of a single member is provided, for example, in a symmetrical V-shape with an angle of about 90 degrees. A conductive film 22 for signal detection drawn out from the center of the magnetoresistive element 21 is provided. Note that 23 is a terminal of the conductive film 22.
この略Ｖ形状の磁気抵抗素子２１の左端部上に
後端部側が重なるように接続された略「形状の磁
極となる磁性膜２４が基板２０上に設けられてお
り、又、磁気抵抗素子２１の右端部上に後端部側
が重なるように接続され、かつ先端部側が磁性膜
２４の先端部と非磁性の絶縁層を介して重なるよ
うに略〓形状の磁極となる磁性膜２５が設けられ
ている。 A magnetic film 24 serving as a substantially V-shaped magnetic pole is provided on the substrate 20 and is connected such that the rear end side overlaps the left end of the substantially V-shaped magnetoresistive element 21. A magnetic film 25 serving as a substantially square-shaped magnetic pole is provided such that its rear end side overlaps with the right end of the magnetic film 24, and its tip side overlaps with the tip of the magnetic film 24 via a non-magnetic insulating layer. ing.
２６は磁性膜２４の後部上に設けられた導電
膜、２７は磁性膜２５の後部上に設けられた導電
膜であり、２８，２９はこれら導電膜の端子、３
０はこれらの端子２８，２９に接続された差動増
幅器である。 26 is a conductive film provided on the rear part of the magnetic film 24; 27 is a conductive film provided on the rear part of the magnetic film 25; 28 and 29 are terminals of these conductive films;
0 is a differential amplifier connected to these terminals 28 and 29.
３１は、非磁性の絶縁膜３２を介して磁気抵抗
素子２１上に設けられたバイアス磁場発生用の導
電膜であり、磁気抵抗素子２１中の磁束が導電膜
３１によるバイアス磁場に対して約45゜の角度を
なして流れ込み、そして約135゜の角度をなして流
れ出るよう、又は約135゜の角度をなして流れ込
み、そして約45゜の角度をなして流れ出るよう導
電膜３１は設けられている。 31 is a conductive film for generating a bias magnetic field provided on the magnetoresistive element 21 via a non-magnetic insulating film 32, and the magnetic flux in the magnetoresistive element 21 is approximately 45 The conductive film 31 is arranged so that it flows in at an angle of about 135° and flows out at an angle of about 135°, or flows in at an angle of about 135° and flows out at an angle of about 45°. .
上記のように構成された磁気抵抗効果型薄膜磁
気ヘツドは、磁気抵抗素子２１中を矢印Ｂ方向に
信号検出用電流が流れ、又バイアス磁場によつて
磁気抵抗素子２１には矢印Ａ方向の磁化が生じて
おり、これに対して記録媒体の記録磁化から誘導
されてきた磁束が矢印Ｃ方向に磁気抵抗素子２１
中に流れてくると、磁気抵抗素子２１の磁化は矢
印Ａ方向より矢印A′方向に変わる。そして、磁
気抵抗素子は、磁化と電流のなす角度Θに対して
その抵抗値は第４図に示すようにcos2Θに比例し
て変化するので、磁気抵抗素子２１の右側の磁気
抵抗素子部２１′では記録磁化からの磁束が加わ
ることによつて第４図中Ｐ点よりP′点に移動、す
なわち抵抗値が上昇するように変化し、又磁気抵
抗素子２１の左側の磁気抵抗素子部２１″では記
録磁化からの磁束が加わることによつて第４図中
Ｑ点よりQ′点に移動、すなわち抵抗値が下降す
るように変化する。 In the magnetoresistive thin film magnetic head constructed as described above, a signal detection current flows in the direction of arrow B in the magnetoresistive element 21, and the magnetoresistive element 21 is magnetized in the direction of arrow A by the bias magnetic field. In response to this, the magnetic flux induced from the recording magnetization of the recording medium flows in the direction of arrow C to the magnetoresistive element 21.
When flowing inside, the magnetization of the magnetoresistive element 21 changes from the direction of arrow A to the direction of arrow A'. As shown in FIG. 4, the resistance value of the magnetoresistive element changes in proportion to cos 2 Θ with respect to the angle Θ formed by the magnetization and current. 21', due to the addition of magnetic flux from the recording magnetization, it moves from point P to point P' in FIG. At 21'', due to the addition of magnetic flux from the recording magnetization, the resistance value changes from point Q to point Q' in FIG. 4, that is, the resistance value decreases.
従つて、磁気抵抗素子２１の両端で、すなわち
端子２８，２９の信号を差動増幅器３０に導き差
信号を求めれば、差動増幅器３０の出力端子と端
子２３との間で信号出力を得ることができる。そ
して例えば記録媒体との摺接による摩擦熱あるい
はバイアス磁場発生用の導電膜の発熱による磁気
抵抗素子２１の温度変化は、磁気抵抗素子部２
１′と２１″とにおいて同じであるので、磁気抵抗
素子２１の両端での差信号を求めると、磁気抵抗
素子２１の温度変化によるノイズはゼロとなり、
熱雑音の発生をなくすことができる。又、特に、
上記実施例の如く、磁気抵抗素子中を流れる検出
用電流と被検出磁束の流れ込む方向が同じで、か
つこの方向がバイアス磁場に対して約45゜又は約
135゜の角度であり、そして検出用電流と被検出磁
束が磁気抵抗素子の中央部で約90゜向きを変え、
バイアス磁場に対して約135゜又は145゜の角度で流
れ出ていくようにしておくと、磁化と電流のなす
角度変化に対する磁気抵抗素子の抵抗値変化を最
も大きくできるので、差信号を求めても大きなも
のとなり、再生Ｓ／Ｎの良好なものとなる。 Therefore, if the signals at both ends of the magnetoresistive element 21, that is, the terminals 28 and 29, are guided to the differential amplifier 30 to obtain a difference signal, a signal output can be obtained between the output terminal of the differential amplifier 30 and the terminal 23. Can be done. For example, the temperature change of the magnetoresistive element 21 due to frictional heat due to sliding contact with the recording medium or heat generation of the conductive film for generating a bias magnetic field is caused by the temperature change of the magnetoresistive element 21.
1' and 21'', so when the difference signal at both ends of the magnetoresistive element 21 is obtained, the noise due to the temperature change of the magnetoresistive element 21 becomes zero;
It is possible to eliminate the generation of thermal noise. Also, especially
As in the above embodiment, the detection current flowing through the magnetoresistive element and the magnetic flux to be detected flow in the same direction, and this direction is approximately 45 degrees or approximately 45 degrees with respect to the bias magnetic field.
The angle is 135°, and the detection current and the detected magnetic flux change direction by about 90° at the center of the magnetoresistive element.
By making the flow flow out at an angle of about 135° or 145° with respect to the bias magnetic field, the change in resistance value of the magnetoresistive element due to the angular change made by magnetization and current can be maximized, so even if the difference signal is obtained, It becomes large, and the reproduction S/N becomes good.
又、上記実施例の如く、略Ｖ形状の磁気抵抗素
子２１が単一部材で構成されていると、磁気抵抗
素子の磁区構造はより単純なものになり、バルク
ハウゼンノイズが生じにくくなり、しかもこの磁
気ヘツドの部品点数は少なくなり、磁気ヘツド全
体の構成も簡略化できる。 Furthermore, if the substantially V-shaped magnetoresistive element 21 is constructed of a single member as in the above embodiment, the magnetic domain structure of the magnetoresistive element will be simpler, making Barkhausen noise less likely to occur. The number of parts in this magnetic head is reduced, and the overall configuration of the magnetic head can be simplified.
第５図は、本発明に係る磁気抵抗効果型磁気ヘ
ツドの他の実施例の要部説明図である。 FIG. 5 is an explanatory view of the main parts of another embodiment of the magnetoresistive magnetic head according to the present invention.
同図中、４１，４２は、前記実施例における磁
性膜２４，２５と同様に構成された磁極となる磁
性膜、４３，４４は、前記実施例における略Ｖ形
状の磁気抵抗素子２１と同様に構成された略Ｖ形
状の磁気抵抗素子であり、これらの磁気抵抗素子
４３，４４によつてブリツジ状に構成されたもの
である。そして、端子４５，４６の間に検出用電
流を流し、端子４７，４８から出力を得るように
したのであり、第２図の構成のものの倍の信号出
力を得ることができる。尚、本実施例において
も、バイアス磁場発生の導電膜が前記実施例と同
様に設けられている。 In the figure, 41 and 42 are magnetic films serving as magnetic poles configured similarly to the magnetic films 24 and 25 in the previous embodiment, and 43 and 44 are similar to the substantially V-shaped magnetoresistive element 21 in the previous embodiment. This is a substantially V-shaped magnetoresistive element constructed, and these magnetoresistive elements 43 and 44 are constructed in a bridge shape. A detection current is passed between the terminals 45 and 46, and an output is obtained from the terminals 47 and 48, making it possible to obtain twice the signal output as in the configuration shown in FIG. In this embodiment as well, a conductive film for generating a bias magnetic field is provided in the same manner as in the previous embodiment.
そして、第５図に示した如く、磁気抵抗素子を
磁気的な閉ループが構成されるような対称形に構
成していると、この磁気抵抗素子にあつてはその
磁区構造がより一層単純になり、バルクハウゼン
ノイズがより一層生じにくくなる。 As shown in Figure 5, if the magnetoresistive element is constructed symmetrically so that a magnetic closed loop is formed, the magnetic domain structure of this magnetoresistive element becomes even simpler. , Barkhausen noise is even less likely to occur.
又、上記の実施例においては、バイアス磁場を
与える手段は導体に電流を流して磁場を発生する
方法であるが、これは硬磁性膜を用いる方法等他
の手段であつてもよい。又、上記実施例では基板
上に１個の磁気ヘツドを設けた場合の例である
が、これは複数個並べた場合でも同じである。 Further, in the above embodiment, the means for applying a bias magnetic field is a method of generating a magnetic field by passing a current through a conductor, but this may be other means such as a method using a hard magnetic film. Further, although the above embodiment is an example in which one magnetic head is provided on the substrate, the same applies even if a plurality of magnetic heads are arranged.
上述の如く、本発明に係る磁気抵抗効果型磁気
ヘツドは、記録媒体からの磁場を導く為の磁極
と、非一直線状で、左右対称な形に構成した前記
磁極の間に接続して設けた単一部材からなる磁気
抵抗素子と、この左右対称な形の磁気抵抗素子の
対称中央部及び端部に設けた信号検出用電極と、
前記磁気抵抗素子に信号検出用電流が流され、か
つ、記録媒体からの磁場が加わつた際に、左右対
称な磁気抵抗素子の一方においては磁気抵抗が増
大し、他方においてはこの増大分と同じ分だけ減
少するようになるバイアス磁場が磁気抵抗素子に
印加されるバイアス磁場印加手段とを備えたの
で、磁気ヘツドと記録媒体との摺接による摩擦熱
等の温度変化によつて磁気抵抗素子の抵抗値に変
化が生じても検出信号には熱雑音は重畳されてな
く除去されており、再生信号のＳ／Ｎは良好であ
り、しかも左右対称形の磁気抵抗素子は単一の部
材で構成させたから、磁気抵抗素子の磁区構造は
より単純なものになり、バルクハウゼンノイズが
起きにくくなり、しかも部品点数を少なくでき、
磁気ヘツド全体の構成も簡略化できる等の特長を
有する。 As described above, the magnetoresistive magnetic head according to the present invention is provided by connecting between a magnetic pole for guiding a magnetic field from a recording medium and the magnetic pole configured in a non-linear and symmetrical shape. A magnetoresistive element made of a single member, signal detection electrodes provided at the symmetrical center and ends of the symmetrical magnetoresistive element,
When a signal detection current is passed through the magnetoresistive element and a magnetic field from the recording medium is applied, the magnetic resistance increases in one side of the symmetrical magnetoresistive element, and the magnetic resistance increases by the same amount as this increase in the other side. Since the bias magnetic field is applied to the magnetoresistive element so that the bias magnetic field is reduced by the amount of the magnetic head, the magnetoresistive element is Even if the resistance value changes, thermal noise is not superimposed on the detection signal and is removed, and the S/N ratio of the reproduced signal is good.Moreover, the symmetrical magnetoresistive element is constructed from a single member. As a result, the magnetic domain structure of the magnetoresistive element is simpler, Barkhausen noise is less likely to occur, and the number of components can be reduced.
It has the advantage of simplifying the overall configuration of the magnetic head.
第１図は従来の磁気抵抗効果型磁気ヘツドの説
明図、第２図及び第３図は本発明に係る磁気抵抗
効果型磁気ヘツドの１実施例の説明図、第４図は
磁気抵抗素子の磁化と電流のなす角度と抵抗変化
との関係を示す説明図、第５図は本発明に係る磁
気抵抗効果型磁気ヘツドの他の実施例の要部説明
図である。
２１，４３，４４……磁気抵抗素子、２２，２
６，２７，３１……導電膜、２４，２５，４１，
４２……磁性膜、３０……差動増幅器。
FIG. 1 is an explanatory diagram of a conventional magnetoresistive magnetic head, FIGS. 2 and 3 are explanatory diagrams of an embodiment of a magnetoresistive magnetic head according to the present invention, and FIG. 4 is an explanatory diagram of a magnetoresistive element. FIG. 5 is an explanatory diagram showing the relationship between the angle formed by magnetization and current and the resistance change. FIG. 5 is an explanatory diagram of the main part of another embodiment of the magnetoresistive magnetic head according to the present invention. 21, 43, 44... Magnetoresistive element, 22, 2
6, 27, 31... conductive film, 24, 25, 41,
42...Magnetic film, 30...Differential amplifier.
Claims (1)
直線状で、左右対称な形に構成した前記磁極の間
に接続して設けた単一部材からなる磁気抵抗素子
と、この左右対称な形の磁気抵抗素子の対称中央
部及び端部に設けた信号検出用電極と、前記磁気
抵抗素子に信号検出用電流が流され、かつ、記録
媒体からの磁場が加わつた際に、左右対称な磁気
抵抗素子の一方においては磁気抵抗が増大し、他
方においてはこの増大分と同じ分だけ減少するよ
うになるバイアス磁場が磁気抵抗素子に印加され
るバイアス磁場印加手段とを備えたことを特徴と
する磁気抵抗効果型磁気ヘツド。 ２ 特許請求の範囲第１項記載の磁気抵抗効果型
磁気ヘツドにおいて、単一部材からなる磁気抵抗
素子は略Ｖ形状に構成されたもの。 ３ 特許請求の範囲第１項記載の磁気抵抗効果型
磁気ヘツドにおいて、単一部材からなる磁気抵抗
素子は磁気的に閉ループを構成するような対称形
に構成されたもの。[Claims] 1. A magnetoresistive element made of a single member connected between a magnetic pole for guiding a magnetic field from a recording medium and the magnetic pole configured in a non-linear and bilaterally symmetrical shape. , signal detection electrodes provided at the symmetrical center and ends of the symmetrical magnetoresistive element, and when a signal detection current is passed through the magnetoresistive element and a magnetic field from the recording medium is applied. and a bias magnetic field applying means for applying a bias magnetic field to the magnetoresistive element such that the magnetic resistance increases on one side of the symmetrical magnetoresistive element and decreases by the same amount as this increase on the other side. A magnetoresistive magnetic head characterized by: 2. In the magnetoresistive magnetic head according to claim 1, the magnetoresistive element made of a single member has a substantially V-shape. 3. In the magnetoresistive magnetic head according to claim 1, the magnetoresistive element made of a single member is constructed symmetrically so as to constitute a magnetically closed loop.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56203569A JPS58108026A (en) | 1981-12-18 | 1981-12-18 | Magnetoresistance effect type magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56203569A JPS58108026A (en) | 1981-12-18 | 1981-12-18 | Magnetoresistance effect type magnetic head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58108026A JPS58108026A (en) | 1983-06-28 |
| JPS639285B2 true JPS639285B2 (en) | 1988-02-26 |
Family
ID=16476293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56203569A Granted JPS58108026A (en) | 1981-12-18 | 1981-12-18 | Magnetoresistance effect type magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58108026A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08805U (en) * | 1993-06-07 | 1996-05-21 | 武盛 豊永 | Circular pipe cleaning machine |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61199684A (en) * | 1985-03-01 | 1986-09-04 | Hitachi Ltd | Magneto-resistance effect element |
| US4802043A (en) * | 1985-03-25 | 1989-01-31 | Hitachi, Ltd. | Magneto-resistive head for protecting against output spike noises |
| CN110376537B (en) * | 2017-12-19 | 2020-07-24 | 大连理工大学 | Manufacturing method of semiconductor three-dimensional Hall sensor suitable for high-temperature working environment |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5223924A (en) * | 1975-08-19 | 1977-02-23 | Matsushita Electric Ind Co Ltd | Magnetic flux response type magnetic head |
-
1981
- 1981-12-18 JP JP56203569A patent/JPS58108026A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5223924A (en) * | 1975-08-19 | 1977-02-23 | Matsushita Electric Ind Co Ltd | Magnetic flux response type magnetic head |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08805U (en) * | 1993-06-07 | 1996-05-21 | 武盛 豊永 | Circular pipe cleaning machine |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58108026A (en) | 1983-06-28 |
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