JPS6390157A - Sealing method for semiconductor device - Google Patents
Sealing method for semiconductor deviceInfo
- Publication number
- JPS6390157A JPS6390157A JP23571986A JP23571986A JPS6390157A JP S6390157 A JPS6390157 A JP S6390157A JP 23571986 A JP23571986 A JP 23571986A JP 23571986 A JP23571986 A JP 23571986A JP S6390157 A JPS6390157 A JP S6390157A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- glass
- base material
- sealing
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000007789 sealing Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000011521 glass Substances 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 229910052574 oxide ceramic Inorganic materials 0.000 claims abstract description 12
- 239000011224 oxide ceramic Substances 0.000 claims abstract description 12
- 238000007733 ion plating Methods 0.000 claims abstract description 6
- 238000004544 sputter deposition Methods 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000011777 magnesium Substances 0.000 claims abstract description 3
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 3
- 239000010703 silicon Substances 0.000 claims abstract description 3
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 3
- 239000010936 titanium Substances 0.000 claims abstract description 3
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 3
- 239000000919 ceramic Substances 0.000 claims description 29
- 239000000565 sealant Substances 0.000 claims 1
- 238000002844 melting Methods 0.000 abstract description 15
- 230000008018 melting Effects 0.000 abstract description 11
- 239000000758 substrate Substances 0.000 abstract description 9
- 230000000694 effects Effects 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000002241 glass-ceramic Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000007751 thermal spraying Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910017112 Fe—C Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はガラス封止型半導体装置の封止方法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a method for sealing a glass-sealed semiconductor device.
現在使用されている半導体集積回路（以下ＩＣと略称す
る）のパッケージ法は樹脂封止型、ガラｘ−セラミック
封止型及び積層セラミック型の３種類に分類される。Currently used packaging methods for semiconductor integrated circuits (hereinafter abbreviated as IC) are classified into three types: resin sealing type, glass x-ceramic sealing type, and laminated ceramic type.
これらの・ξツケージ法は信頼性及び価格の点で各々長
短があり、信頼性に関しては積層セラミック型、ガラス
−セラミック型、樹脂封止型の順に優れ、一方価格の点
ではこの逆の順序で安価となる。そこで、これらの点を
比較考量して用途に応じて使いわけている現状である。Each of these ξ-cage methods has its advantages and disadvantages in terms of reliability and price. In terms of reliability, the laminated ceramic type, glass-ceramic type, and resin-sealed type are superior in this order, while in terms of price, they are superior in the reverse order. It will be cheaper. Therefore, the current situation is to weigh these points and use them depending on the purpose.
最近では、各・ぐツケージ法の短所を克服すべく研究が
進められており、特に信頼性と価格において中間的なガ
ラス−セラミック封止型の改良が強く望まれている。Recently, research has been carried out to overcome the shortcomings of various packaging methods, and in particular, it is strongly desired to improve the glass-ceramic sealing type, which is intermediate in terms of reliability and cost.
第３図に上記のガラス−セラミック封止型・ぐツケージ
の分解部品配列斜視図を、及び第４図にこの・ぐツケー
ジを用いてガラス封止した半導体装置の一例を示す。FIG. 3 is a perspective view of the disassembled parts arrangement of the above-mentioned glass-ceramic sealing type shoe cage, and FIG. 4 shows an example of a semiconductor device sealed with glass using this shoe cage.
この、ｅツケージのベース材はアルミナ等のセラミック
材３であり、そのほぼ中央にＩＣ等の半導体チップ１を
グイデンディングすべき凹部２が形成され、周縁のガラ
ス封止すべき部分の表面には鉛ガラスのような低融点ガ
ラス層４が設けである。The base material of this e-cage is a ceramic material 3 such as alumina, and a recess 2 in which a semiconductor chip 1 such as an IC is to be guided is formed approximately in the center, and a recess 2 in which a semiconductor chip 1 such as an IC is to be placed is formed on the surface of the peripheral portion to be sealed with glass. A low melting point glass layer 4 such as lead glass is provided.
半導体チップ１を載置したセラミック基材３の周囲から
リードフレームから裁断したリード５が載せられ、各リ
ード５と半導体チップ１の各電極とはアルミニウム等の
デンディングワイヤ６で結線される。このセラミック基
材３の上に、半導体チップ１とデンディングワイヤ６を
収容する凹部８と該凹部８周縁に低融点ガラス層９を設
けたアルミナ等のセラミックキャップ７を重ねて加熱す
ることにより、低融点ガラス層４，９がリード５を固定
しつつ互いに融着してセラミック基材３とセラミックキ
ャップ７とを封止する。Leads 5 cut from a lead frame are placed around the ceramic base material 3 on which the semiconductor chip 1 is placed, and each lead 5 and each electrode of the semiconductor chip 1 are connected with a denting wire 6 made of aluminum or the like. By overlaying and heating a recess 8 for accommodating the semiconductor chip 1 and the Dending wire 6 and a ceramic cap 7 made of alumina or the like having a low melting point glass layer 9 around the periphery of the recess 8, on top of the ceramic base material 3, The low melting point glass layers 4 and 9 fix the leads 5 and are fused together to seal the ceramic base material 3 and the ceramic cap 7.
しかし、従来使用されているアルミナＡＲ２０３に代表
されるセラミック基材は熱伝導率が小さいために、半導
体素子で発生した熱を効率よく放散することができず、
熱の蓄積によって半導体装置の誤動作を招く等の欠点が
ある。また、セラミック自体の薄板化が技術的に非常に
困難であシ、例え薄板化できてもセラミックスの靭性が
低いために割れが発生しやすいという問題点があった。However, conventionally used ceramic base materials such as alumina AR203 have low thermal conductivity, so they cannot efficiently dissipate the heat generated by semiconductor elements.
There are drawbacks such as heat accumulation leading to malfunction of the semiconductor device. In addition, it is technically very difficult to make the ceramic itself into a thin plate, and even if it could be made into a thin plate, the toughness of the ceramic is low, making it easy to crack.
最近、ＩＣを中心とする半導体チップの高集積化及び小
型軽量化の傾向に伴ない、・ξツケージは薄く小型にな
り、半導体チップの発熱量は益々増大しているので、上
記したセラミック基材を用いてのガラス封止が困難にな
シつつある。Recently, with the trend toward higher integration, smaller size, and lighter weight of semiconductor chips, mainly ICs, the It is becoming increasingly difficult to seal glass with glass.
本発明は、上記した従来のセラミック基材によるガラス
封止の欠点を解決して、熱放散性に優れ薄型化が容易な
半導体装置の封止方法を提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for encapsulating a semiconductor device that has excellent heat dissipation properties and can be easily made thin by solving the above-described drawbacks of conventional glass encapsulation using a ceramic base material.
本発明の半導体装置の封止方法は、半導体チップを載置
するベース材として金属基材を使用し、該金属基材の少
なくともガラス封止されるべき部分の表面に酸化物系セ
ラミック層を形成し、該酸化物系セラミック層を介して
ガラス封止することを特徴とする。The semiconductor device sealing method of the present invention uses a metal base material as a base material on which a semiconductor chip is placed, and forms an oxide-based ceramic layer on the surface of at least a portion of the metal base material that is to be sealed with glass. The device is characterized in that it is sealed with glass through the oxide ceramic layer.
上記金属基材としては、鉄、鉄合金、銅、銅合金、鉄−
ニッケル合金、又はこれらにニッケル又はクロムを被覆
した材料が好ましい。The above metal base materials include iron, iron alloy, copper, copper alloy, iron-
A nickel alloy or a material obtained by coating these with nickel or chromium is preferable.
上記セラミックとしては、低融点ガラスとの濡れ性が非
常に良好で熱膨張係数が近似している酸化物系セラミッ
クを使用し、特にアルミニウム。As the above-mentioned ceramic, an oxide ceramic is used which has very good wettability with low melting point glass and has a coefficient of thermal expansion similar to that of low melting point glass, especially aluminum.
マグネシウム、ケイ素及びチタンの少なくとも１種の酸
化物が好ましい。Oxides of at least one of magnesium, silicon and titanium are preferred.
ガラス封止型・ぐツケージのベース材として金属基材を
使用した場合、一般に金属基材と低融点ガラスとの熱膨
張係数に大きな差があるため両者の接合自体が不可能で
ある。金属基材として鉄−ニッケル合金を用いた場合に
は両者の熱膨張係数の差が比較的少ないので接合可能で
あるが、金属基材表面の脆い金属酸化物を介して低融点
ガラスと接合しているので密着性に乏しく、ガラス封止
後の気密信頼性が著しく低い結果となる。When a metal base material is used as a base material for a glass-sealed shoe cage, it is generally impossible to bond the metal base material and low-melting glass because there is a large difference in coefficient of thermal expansion between the two. When an iron-nickel alloy is used as the metal base material, the difference in thermal expansion coefficient between the two is relatively small, so it is possible to bond it, but it is possible to bond it to low-melting glass through the brittle metal oxide on the surface of the metal base material. This results in poor adhesion and extremely low airtight reliability after glass sealing.
本発明においては、第１図に示すように、ベース材とし
ての金属基材１０の少なくともガラス封止されるべき部
分の表面に酸化物系セラミック層１１を形成し、このセ
ラミック層１１上に通常の低融点ガラス層９を形成しで
ある。その結果、金属基材１０は酸化物系セラミック層
１１を介してガラス封止されることになり、酸化物系セ
ラミックが低融点ガラスとの濡れ性が非常に良好で且つ
両者の熱膨張係数が近似しているから極めて良好な密着
強度と気密性が達成される。更に、セラミック層１１に
は金属基材１０と低融点ガラス層９との熱膨張差による
応力を緩和する作用があるので、金属基材１０として熱
膨張係数の大きな銅又は銅合金を使用した場合でも完全
な封止が可能と唸る。In the present invention, as shown in FIG. 1, an oxide ceramic layer 11 is formed on the surface of at least a portion of a metal substrate 10 serving as a base material to be sealed with glass, and on this ceramic layer 11, a A low melting point glass layer 9 is formed. As a result, the metal base material 10 is sealed with glass via the oxide ceramic layer 11, and the oxide ceramic has very good wettability with the low melting point glass and the coefficient of thermal expansion of both is low. Because they are similar, extremely good adhesion strength and airtightness can be achieved. Furthermore, since the ceramic layer 11 has the effect of relieving stress due to the difference in thermal expansion between the metal base material 10 and the low melting point glass layer 9, when copper or copper alloy with a large coefficient of thermal expansion is used as the metal base material 10, However, it is possible to completely seal it.
また、セラミック層１１と金属基材１０との密着性には
セラミック層１１の形成方法によって差異がある。この
形成方法には物理的又は化学的蒸着法、溶射法及び塗布
法等があるが、溶射法及び塗布法は薄膜形成に不適当で
あるほか金属基材が熱的影響を受けて変質する恐れがあ
る。また、化学的蒸着法（ＣＶＤ）も熱的影響が大きく
好ましくない。物理的蒸着法（ＰＶＤ）はこの熱的影響
がなく、なかでもイオンシレーティング法及びスパッタ
リング法は金属基材との密着がよく完全な酸化物からな
るセラミック層を形成でき、加えてセラミック層１１の
膜厚制御も容易である。好ましい金属基材−セラミック
層−形成法の組合わせの一部は、例えばＦｅ又はＦｅ合
金−ＡＪ！２０３−イオンプレーティング、 Ｃｕ又は
Ｃｕ合金−５ｉＯ２−スパッタリング法グ法−Ｎｉ合金
−ＡＰ２０３又はＴ ｉ Ｏ２−イオンプレーティング
である。しかし、真空蒸着法では完全な酸化物からなる
セラミック層を得ることは困難であシ、また得られたセ
ラミック層の金属基材との密着性も好ましくない。Furthermore, the adhesion between the ceramic layer 11 and the metal base material 10 varies depending on the method of forming the ceramic layer 11. Formation methods include physical or chemical vapor deposition, thermal spraying, and coating methods, but thermal spraying and coating methods are unsuitable for forming thin films, and there is a risk that the metal substrate may deteriorate due to thermal effects. There is. Further, chemical vapor deposition (CVD) is also undesirable due to its large thermal influence. Physical vapor deposition (PVD) does not have this thermal effect, and ion silating and sputtering methods have good adhesion to metal substrates and can form a complete oxide ceramic layer. It is also easy to control the film thickness. Some of the preferred metal substrate-ceramic layer-formation method combinations include, for example, Fe or Fe alloy-AJ! 203-ion plating, Cu or Cu alloy-5iO2-sputtering method-Ni alloy-AP203 or TiO2-ion plating. However, it is difficult to obtain a ceramic layer made of a complete oxide by vacuum evaporation, and the adhesion of the obtained ceramic layer to the metal substrate is also unfavorable.
第２図に示すように、２枚の金属基板１０の周縁部に酸
化物系のセラミック層１１を形成し、このセラミック層
１１を向い合わせてその間を低融点ガラス層９で封着し
た構造のサンプルを作成した。使用した金属基材１０は
２０ ｍ１１角で厚さ０．２５關の１，５％ Ｆｅ−Ｃ
ｕ合金であり、セラミック層１１は５μｍのＡ１２０３
層を高周波励起によるイオンプレーティング法で形成し
、ＰｂＯ−８２０３系低融点ガラスを用いて４００Ｃで
封止した。As shown in FIG. 2, the structure is such that an oxide-based ceramic layer 11 is formed on the periphery of two metal substrates 10, the ceramic layers 11 are faced to each other, and the space between them is sealed with a low-melting glass layer 9. I created a sample. The metal base material 10 used was 1.5% Fe-C with a 20 m square and a thickness of 0.25 mm.
The ceramic layer 11 is made of A1203 with a thickness of 5 μm.
The layer was formed by an ion plating method using high frequency excitation, and sealed at 400C using PbO-8203 low melting point glass.
比較のために、同一寸法で低融点ガラスと接合しやすい
４２％Ｎｉ−Ｆｅ合金の金属基材１０を使用した以外は
上記と同様にして同じ構造のサンプルを作成した。For comparison, a sample with the same structure was prepared in the same manner as described above, except that a metal base material 10 of 42% Ni--Fe alloy, which has the same dimensions and is easily bonded to low-melting glass, was used.
これらのサンプル各１００個について、１サイクルが一
６５Ｃから１５０Ｃの温度サイクルテストを１０００サ
イクル行った後、Ｈｅリークテストを実施した。本発明
のサンプルにはリークが全く認められなかったが、比較
例のサンプルには８９個にリークが認められた。For each of these 100 samples, a temperature cycle test was performed for 1000 cycles in which each cycle ranged from 165C to 150C, and then a He leak test was performed. No leaks were observed in the samples of the present invention, but leaks were observed in 89 samples of the comparative example.
本発明によれば、ベース材として金属基材を用いること
により熱放散性に優れ且つ薄型化が容易であり、しかも
金属基材のガラス封止すべき部分にイオンプレーティン
グ法又はスパッタリング法により酸化物系セラミック層
を設けることにより優れたガラス封着性を得ることがで
きる。According to the present invention, by using a metal base material as a base material, it has excellent heat dissipation properties and can be easily made thin, and the part of the metal base material to be sealed with glass is oxidized by ion plating or sputtering. By providing the physical ceramic layer, excellent glass sealing properties can be obtained.
第１図は本発明に係る酸化物系セラミック層を具えた金
属基材の一部の断面図であり、第２図は第１図の金属基
材２枚をガラス封止した封着性テストのサンプルの断面
図である。第３図はガラス−セラミック封止型ノξツケ
ージの分解部品配列斜視図であシ、第４図は第３図のノ
ツ、ゲージを用いてガラス封止した半導体装置の断面図
である。
１・・・半導体チップ、３・・・セラミック基材、４゜
９・・・低融点ガラス層、５・・・リード、６・・・ボ
ンディングワイヤ、７・・・セラミックキャップ、１０
・・・金属基材、１１・・・セラミック層。Fig. 1 is a cross-sectional view of a part of a metal substrate provided with an oxide ceramic layer according to the present invention, and Fig. 2 is a sealing test in which two metal substrates of Fig. 1 are sealed with glass. FIG. FIG. 3 is a perspective view of an exploded arrangement of parts of a glass-ceramic sealed type nut cage, and FIG. 4 is a sectional view of a semiconductor device sealed in glass using the nut and gauge of FIG. 3. DESCRIPTION OF SYMBOLS 1... Semiconductor chip, 3... Ceramic base material, 4°9... Low melting point glass layer, 5... Lead, 6... Bonding wire, 7... Ceramic cap, 10
... Metal base material, 11... Ceramic layer.
Claims (4)
を使用し、該金属基材の少なくともガラス封止されるべ
き部分の表面に酸化物系セラミック層を形成し、該酸化
物系セラミック層を介してガラス封止することを特徴と
する半導体装置の封止方法。(1) A metal base material is used as a base material on which a semiconductor chip is placed, an oxide ceramic layer is formed on the surface of at least a portion of the metal base material to be sealed with glass, and the oxide ceramic layer is 1. A method for sealing a semiconductor device, the method comprising glass-sealing a semiconductor device through a glass sealant.
グネシウム、ケイ素及びチタンの少なくとも１種の酸化
物であることを特徴とする、特許請求の範囲（１）項に
記載の半導体装置の封止方法。(2) The method for sealing a semiconductor device according to claim (1), wherein the oxide-based ceramic layer is an oxide of at least one of aluminum, magnesium, silicon, and titanium. .
グ法又はスパッタリング法により形成されたことを特徴
とする、特許請求の範囲（１）項又は（２）項記載の半
導体装置の封止方法。(3) The method for sealing a semiconductor device according to claim (1) or (2), wherein the oxide ceramic layer is formed by an ion plating method or a sputtering method.
、Ｃｕ、Ｃｕ合金、又はこれらにＮｉ若しくはＣｒを被
覆した材料であることを特徴とする、特許請求の範囲（
１）〜（３）項のいずれかに記載の半導体装置の封止方
法。(4) The scope of the claims (
The method for sealing a semiconductor device according to any one of items 1) to (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23571986A JPS6390157A (en) | 1986-10-03 | 1986-10-03 | Sealing method for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23571986A JPS6390157A (en) | 1986-10-03 | 1986-10-03 | Sealing method for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6390157A true JPS6390157A (en) | 1988-04-21 |
Family
ID=16990216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23571986A Pending JPS6390157A (en) | 1986-10-03 | 1986-10-03 | Sealing method for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6390157A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0443017U (en) * | 1990-08-07 | 1992-04-13 |
-
1986
- 1986-10-03 JP JP23571986A patent/JPS6390157A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0443017U (en) * | 1990-08-07 | 1992-04-13 |
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