JPS6388745A - Ion implanting apparatus - Google Patents

Abstract

PURPOSE:To reduce the cable number between an ion implanting apparatus main body and an ion implanting watching/control member, and to improve the reliability of the system, by connecting a parent side light I/O (input/output) unit of the ion implanting watching/control member and a child side light I/O unit of an ion implanting apparatus main body with optical fiber cables. CONSTITUTION:A parent side light I/O unit 42 of an ion implanting watching/ control member II and a child side light I/O unit 52 of an ion implanting apparatus main body I are connected with optical fiber cables 61, while child side light I/O units 52, 54, and 56 are connected each other with optical fiber cables 62 and 63 between child units. And between a multiplex transmission parent unit 41 and the parent side light I/O unit 42, and between multiplex transmission units 51, 53, 55, and the child side light I/O units 52, 54, 56 are connected with conductive cables. In order to make control signals and watching signals into a multiplex system and to convert into light signals to deliver and receive between the ion implanting watching/control member II and the ion implanting apparatus main body I, the satisfactory number of the optical fiber cables are only two for control signals and for watching signals.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an ion implantation apparatus for implanting ions into a semiconductor wafer.

[Lazy technique]

4th v! lJ shows the configuration of an example of a conventional electrostatic scan type ion implantation device. This electrostatic scan type ion implanter consists of an ion implanter body ■' and this ion implanter body! The ion implantation monitoring control section ``'' and the ion implantation monitoring control section ``'' and the ion implantation apparatus main body ``■'' are arranged to exchange control signals and monitoring signals.

The ion implanter body ■' consists of an ion source 1. quality a analyzer 3
．． Accelerator tube 4. The high potential section 25 includes, in addition to the above, a gas box 7, an ion ass 8. Output power supply9. Magnet power supply 1
0. A telemeter 22 is installed, and in addition to the above, an acceleration power source 1). 0 lens li source 14. scanning electron aX
S. Injection mode selection unit 16 for selecting scan mode and spot mode. End station j! l1II
I section 17° vacuum control section 18. Interrotator section 19, signal relay station 20. A telemeter 21 is installed.

The ion implantation monitoring control unit n' also includes an operation unit 31° display unit 32. It is configured to include a telemeter 33.

An optical fiber cable and a conductive cable are used to connect the ion implantation monitoring control section n' and the ion implantation apparatus main body 2'. Specifically, the ion implantation monitoring control unit ■' and the ground portion 24 of the ion implanter main body 1', which have no potential problems.
Acceleration within 1) #1)゜Q lens power supply 14. scanning? till
l15. Injection mode selection section 16. end station j
#1) 1) section 17, vacuum control section 18. It is connected to the signal relay station 20 by a conductive cable. Also, there is a large potential difference between the ion implantation monitoring control section ■' and the gas box 7 of the high potential section 25, the ion source 1): /R8, the extraction power source 9. It is connected to the magnet power supply 10 by an optical fiber cable via a telemeter 33.22. Also, the earth part 2
The telemeter 21 of No. 4 is connected to the ion implantation monitoring control section n' by a conductive cable, and is connected to the ion leakage R8 of the high potential section 25, the extraction power source 9. It is connected to magnet 1)i+1)0 by an optical fiber cable. Further, the telemeter 22 is connected to the lead-out power source 9° and the magnet power source 10 by a conductive cable.

In addition, gas box 7, ion source power supply 8. Drawer 1! #9
．． Magnet electric f! For AlO, telemeter 21.33
Each has a built-in telemeter.

In this ion implanter, control signals generated by operating various switches on the operating section 31 of the ion implantation monitoring control section ■' are sent to the gas box 7 of the high potential section 25 of the ion implanter main body ■', and to the ion source power source 8°. Type #9. The monitor signal is converted into an optical signal and transmitted to the magnet power supply 10 by telemeters 33, 21, and 22, and the monitoring signal is similarly converted into an optical signal and transmitted along the opposite route. Further, the acceleration of the ground portion 24 from the ion implantation monitoring control unit ■' 1) i! 1) 1.Q lens power supply 14. Scanning power supply 15. Injection mode selection section 16. End station run control section 17. The control signals sent to the vacuum control section 18, interlock section 19, etc. are sent as electrical signals, and the monitoring signals are similarly sent as electrical signals through the opposite route.

By transmitting such iti control signals, the gas box 7, ion source power supply 8. Drawer 1! Source 9゜ Drives a solenoid valve, electromagnetic relay, etc. built into the magnet power supply 10, acceleration power supply l1, etc. to start supplying a specific gas to the gas box 7, adjust its amount, or draw out ii Source 90 input cut off.

Turn on/off the magnet power supply 100, perform Ii fed-batch ring,
In addition, the ion source N source 8. Drawer 1) a9. Monitoring signals such as various voltages and current values of the magnet power supply 10 and the like are sent to the ion implantation monitoring control section 2' and displayed on the display section 32.

[Problem that the invention seeks to solve]

Such a conventional ion implanter uses a simple transmission method that uses one transmission path for L types of control signals or monitoring signals between the ion implanter main body ■' and the ion implantation monitoring control section ■'. In order to transmit control signals and monitoring signals, the number of cables connecting the ion implanter main body I' and the ion implantation monitoring control section ■' is enormous, resulting in low system reliability and difficult maintenance. I took it seriously.

An object of the present invention is to provide an ion implanter that can improve system reliability and facilitate maintenance by reducing the number of cables between the ion implanter main body and an ion implantation monitoring control section. .

[Means for Solving the Problems] The ion implantation apparatus of the present invention is an ion implantation apparatus that exchanges control signals and monitoring signals between an ion implantation apparatus main body and an ion implantation monitoring control section, and includes the following steps: The control unit includes a multiplex transmission master device for transmitting control signals and receiving supervisory signals, and a master side optical input/output unit connected to the multiplex transmission master device; It has a built-in multiplex transfer unit for transmitting monitoring signals and a suspender-side optical input/output unit connected to the multiplex transfer unit, and includes a parent-side optical input/output unit of the ion implantation monitoring control unit and the ion implantation apparatus main body. It is characterized by connecting the light input/output crab knit on the side of the hanger with an optical fiber cable.

[Effect]

According to the configuration of the present invention, the ion implantation monitoring and control section has a built-in multiplex transmission master device and the master device side optical input/output unit, the ion implantation device main body has a built-in multiplex transmission device and a suspender side optical input/output unit, The optical input/output unit on the main device side and the optical input/output unit on the suspension side are connected with an optical fiber cable, and the control signals and monitoring signals are multiplexed and converted into optical signals between the ion implantation monitoring control unit and the ion implantation device main body. Therefore, only two optical fiber cables are required, one for control signals and one for monitoring signals, and the number of cables connecting the ion implantation monitoring control unit and the ion implantation device itself can be reduced to two, compared to the conventional method. It is possible to significantly reduce the number of cables compared to the conventional method, improving system reliability and making maintenance easier. In addition, since it is transmitted as an optical signal, even when transmitting signals to locations with significantly different potentials, electrical insulation can be ensured, making it highly safe, and it is not affected by external noise (which also increases reliability). is high.

〔Example〕

FIG. 1 shows the configuration of an ion implantation apparatus according to an embodiment of the present invention. This ion implanter consists of an ion implanter main body ■ and an ion implanter monitoring control section ■ that monitors and controls the ion implanter main body ■. Control signals and monitoring signals are exchanged between the

The ion implantation monitoring control section (■) includes a multiplex transmission master unit 41 for transmitting control signals and receiving supervisory signals, and this multiplex transmission master unit 41.
It has a built-in optical input/output unit 42 connected to the main device side.

In addition, the ion implantation apparatus main body (2) includes a multiple transmitter 51°53.55 for receiving control signals and transmitting monitoring signals, and a light input/output unit 52 on the suspension side connected to the multiple transmitter 51, 53.55. It has a built-in .54°56.

Then, the optical input/output unit 42 on the parent device side of the ion implantation monitoring control section (3) and the light input/output unit 52 on the suspender side of the ion implanter main body I are connected with an optical fiber cable 61, and the light input/output unit on the suspender side is connected with the optical fiber cable 61. 52, 54, and 56 are connected to each other by an open optical fiber cable 62, 63. In addition, a multiplex transmission master unit 41 and a master unit side optical input/output unit 4
2 and between the multiple transmitter 51, 53, 55 and the light input/output unit 52, 54. A conductive cable is used to connect between the cables 6 and 6.

It should be noted that the optical fiber cable 61 and the open optical fiber cables 62 and 63 each have two cores (outward path, return path). In addition, the multiplex transmitters 551, 53, and 55 are distributed in the ion implanter body! The optical input/output units (optical input/output units) 52, 54 and 56 on the Viscount's side are also installed in the vicinity of the controlled and monitored targets.

FIG. 2 shows a detailed configuration diagram of this ion implantation device (electrostatic scanning type). A detailed explanation will be given below based on this figure.

The ion implanter body ■ is an ion source 1 that generates ions.
, a mass analyzer 3 that selects necessary ion species from the ion beam 2 extracted from the ion source 1, an acceleration tube 4 that accelerates the ion beam 2 output from the mass analyzer 3, and an acceleration tube 4 that The main element is an end station run 6 that implants ions by applying the ion beam 2 to the wafer 5, and the inside of the end station run 6 is a vacuum. The ion source 1 includes a gas box 7 for supplying gas and various voltages.

An ion source power supply 8 for supplying current and a drawer type R9 for drawing out the ion beam 2 are connected.

The mass spectrometer R3 includes an analysis magnet 1! for supplying power to a mass spectrometer magnet (not shown). The source 10 is the acceleration tube 4
An acceleration power source 1) is connected to each of the .

The ion source 1 is, for example, a hot shade 1 PIG attached to a solid state oven.
a filament (not shown) and an arc 'w1
The ion source includes a pole (not shown) and a source magnet (not shown). IAc filament 1! iS, arc power, source magnet power.

The gas supplied from the gas box 7 to the arc chamber is ionized by supplying power to the filament, the arc electrode 3, the source magnet, etc. from the oven power source, etc.) 8. Specifically, plasma is created by performing arc discharge using thermionic emission from the filament as a trigger. Then, the ion beam 2 is extracted from the slit-shaped ion extraction port 1a by the extraction voltage supplied from the extraction type fyA 9. Note that the source magnet applies a magnetic field to the arc chamber in order to lengthen the traveling distance of the arc.

This ion source can use not only gas but also solids (As, P, Sb, etc.) as the ion source material. When solids are used, the solid ion source material can be evaporated in a solid oven. At the same time, a carrier gas (such as Ar) is introduced into the arc chamber from the gas box 7 to ionize the solid ion source material.

The gas box 7 is connected to the ion source 1 described above, and includes, for example, four gas bottles (for example, Ar.

S i F 4 , B Cl 3 , P C1, etc.), and selectively supplies any type of gas to the ion source 1 depending on the required ion species.

The mass spectrometer 3 receives power from an analysis magnet ii source 10 to a mass analysis magnet deflected at 90 degrees, selects a necessary ion species from the ion beam 2 extracted from the ion source 1, and uses the magnetism of the mass analysis magnet. The ion beam 2 is guided to the acceleration tube 4 using the focusing effect.

The acceleration tube 4 has a structure in which, for example, insulators and metal electrodes are bonded in multiple stages. A constant acceleration voltage is applied to each electrode from an acceleration power source 1) through a resistor (not shown), and the ion beam 2 It enters the end station run 6 after being accelerated by a voltage that is the sum of the extraction voltage and this acceleration voltage.

This acceleration voltage is set according to the implantation energy.

The ion beam 2 exiting the accelerator tube 4 is focused by a Q lens 12 before entering the end station run 6, is further scanned by a scanning electrode 13, and is then sent to the end station run 6.
The entire surface of the wafer 5 inside is scanned and irradiated. Q lens 1
2 is supplied with power from the Q lens power supply 14, and the scan electrode 13
is supplied with power from the scanning electrode 15. This Q lens 1! [
14 and scan 1)! The i source 15 is controlled by a Q lens/sweve control section 26.

The end station run 5 is connected to the end station run control section 1.
7 controls the loading and unloading of the wafer 5, etc. Further, the vacuum system, ie, the vacuum pump, etc., is controlled by the vacuum control section 18.

The interlofter section 19 has a function of stopping operation to ensure safety, for example, when cooling water stops flowing and the temperature rises abnormally.

27 is a signal relay station including a viscount block consisting of the multiplex transmission slave unit 51 and slave side optical input/output unit 52 shown in FIG.
Reference numeral 28 denotes a viscount block consisting of the multiplex transmitter device 53 and the slave side optical input/output unit 54 shown in FIG. Further, the gas box 7 has a built-in viscount block consisting of a multiplex transmitter 55 and a slave-side optical input/output unit 56 shown in FIG. Ion source #8 has a built-in telemeter, and is connected to the Viscount block 28 using an optical fiber cable.
connected to. 23 is an isolation transformer, 24 is a ground section, 25
is a high potential part.

In this ion implanter main body I, an optical signal sent through the optical fiber cable 61 is sent from the signal relay station 27 through the Viscount block 28 to the gas box 7 and the Viscount block in the ion control power source 8, but each slave device In the block, the optical signal is converted into an electrical signal and further the individual control signals are restored, and the various voltages of the ion source 1, 'U! L,
The extraction voltage, magnet'/Ii current, etc. are restored based on the control signal.

In this case, the control signals are assigned channels according to their types, and for example, in the Viscount block built in the signal relay station 27, the Q lens/sweve control section 26 connected to the Viscount block is connected to the Q lens/sweve control section 26. Only the control signals of the channels corresponding to the vacuum control unit 18° end station run control unit 17, etc. are restored. Similarly, in the viscount block 28, the drawer power source 9. Only the control signal of the channel corresponding to the magnet electric StO is restored.

The same applies to the gas box 7.

In addition, although I will not explain the monitoring signals in detail, the signals obtained from each section are allocated to channels in the Viscount block, multiplexed, and further converted into optical signals. will be sent to.

On the other hand, the ion implantation monitoring control section (2) includes an operation section 31 consisting of an on/off switch etc., a display section 32 consisting of a lamp etc., a multiplex transmission unit 41 as shown in FIG. 42, the operating section 31 generates control signals for controlling the ion implanter main body ■, and the display section 32 generates control signals for controlling the ion implanter main body! Displays the status of the monitoring signal sent from. The above control signals are multiplexed by the multiplex transmission main device 41, further converted into optical signals by the main device side optical input/output unit 42, and sent to the optical fiber cable 61. Further, the optical signal sent through the optical fiber cable 61 is converted into an electrical signal by the photometry input/output unit 42, and further restored into individual monitoring signals by the multiplex transmission main unit 41 and sent to the display section 32.

Then, by transmitting the Wi-Fi signal, the gas box 7, ion source power supply 8. Drawer type [9° magnet power supply 10. For example, by driving a solenoid valve, an electromagnetic relay, etc. built into the accelerator electric fi1), etc., the supply of a specific gas to the gas box 7 is started, the amount thereof is adjusted, or the draw-out power source 9 is turned on and off.

The magnet power supply 10 is turned on and off, the current is adjusted, etc., and the ion source power supply 8. Output power supply9. Magnet power supply 10
Monitoring signals such as various voltages, current values, etc. are sent to the ion implantation supervisory control section (2), and displayed on the display section 32.

FIG. 3 shows the specific configuration of the ion implantation monitoring and control unit (2), 41A is a CPU, 41B is a CPU interface, these are configured as a programmable controller, and various sequence operations (on/off, ink clock, etc.)
It also functions as a multiplex transmission master device 41.

The ion implantation apparatus of this embodiment includes an ion implantation monitoring and control unit 4, a multiplex transmission master unit 41, and a master unit side optical input/output unit 4.
2 is built-in, and a multiplex transmitter 51 is installed in the ion implanter main body I.
, 53, 55 and slave side optical input/output units 52, 54
．． The optical input/output unit 42 on the main device side and the optical input/output unit 52 on the child device side are connected with an optical fiber cable 61, and control signals are transmitted between the ion implantation monitoring control unit (■) and the ion implantation apparatus main body (■). Since the monitoring signals are multiplexed, converted into optical signals, and delivered, two optical fiber cables 61 are required, one for control signals and one for monitoring signals. The number of cables to be connected can be reduced to two, making it possible to significantly reduce the number of cables compared to the past, improving system reliability, and making maintenance easier. In addition, since it is transmitted using optical signals,
Even when transmitting signals to locations with significantly different potentials, electrical insulation can be ensured and safety is high, and it is less susceptible to external noise, making it highly reliable in this respect as well.

In the above embodiment, the present invention is applied to an electrostatic scan type ion implantation apparatus, but the present invention can also be applied to a mechanical scan type.

〔Effect of the invention〕

According to the ion implanter of the present invention, the ion implantation monitoring and control section has a built-in multiplex transmission master device and the master device side optical input/output unit, and the ion implanter main body has a multiplex transmission slave device and a slave side optical input/output unit. Built-in, the optical input/output unit on the m unit side and the optical input/output unit on the sub unit side can be connected via optical fiber cable.
Since control signals and monitoring signals are multiplexed, converted into optical signals, and transferred between the IML, ion implantation monitoring and control unit, and the ion implanter main body, optical fiber cables are used for control signals and monitoring signals. Only two cables are required, and the number of cables connecting the ion implantation monitoring control unit and the ion implanter main body can be reduced to two, making it possible to significantly reduce the number of cables compared to the past, and improving system reliability. It also makes maintenance easier. In addition, since it is transmitted as an optical signal, even when transmitting signals to locations with significantly different potentials, electrical insulation can be ensured and safety is high, and it is not easily affected by external noise, making it highly reliable in this respect as well.

[Brief explanation of the drawing]

Fig. 1 is a block diagram of an embodiment of the present invention, Fig. 2 is a detailed block diagram thereof, Fig. 3 is a block diagram showing the specific configuration of the ion implantation monitoring control section, and Fig. 4 is a block diagram of a conventional example. It is. ■... Ion implantation device main body, ■... Ion implantation monitoring control unit, 41... Multiple transmission monitor, 42... Main device side optical input/output unit, 51, 53.55... Multiple transfer Slave device, 52.54.56... Slave side optical input/output unit, 6
1...Optical fiber cable, 62.63...Inter-device optical fiber cable Patent applicant: Nissin Electric Co., Ltd., 2:":""i"+ Figure 1 Figure 3

Claims (2)

[Claims] (1) In an ion implanter that exchanges control signals and monitoring signals between the ion implanter main body and an ion implantation monitoring control section, multiplex transmission for transmitting control signals and receiving monitoring signals to the ion implantation monitoring control section. A parent device and a parent device-side optical input/output unit connected to the multiplex transmission parent device are built in, and the ion implanter main body includes a multiplex transmission device for receiving control signals and transmitting monitoring signals, and this multiplex transmission device. A slave device-side optical input/output unit connected to the ion implantation apparatus body is built in, and the parent device side optical input/output unit of the ion implantation monitoring and control section and the slave device side optical input/output unit of the ion implantation apparatus main body are connected by an optical fiber cable. An ion implantation device characterized by being connected. (2) The ion implanter main body includes a plurality of distributed multiplex transmission slave units and slave side optical input/output units, and the plurality of slave side optical input/output units are connected by optical fiber cables between slave units. An ion implantation apparatus according to claim (1).