JPS6386444A - Semiconductor device - Google Patents

Abstract

PURPOSE:To double the mounting density compared with the conventional one by a method wherein the first lead pattern formed on one surface of an insulating tape is bonded onto the first bump formed on the surface of the first chip while the second lead pattern formed on the other surface is bonded onto the second bump formed on the surface of the second chip. CONSTITUTION:A bonding table 50 and a bonding tool 70 are respectively provided with a recession 50c and another recession 70c while heaters 80 and 81 are respectively provided along the surface of recession 50c and 70c to heat bump 2a, lead pattern 4a and bump 2b, lead pattern 4b from respective sides and rear surfaces of chip 1a and 1b furthermore the rear surface of chip 1a and chip 1b are pressed down respectively by the bonding the 50 and the bonding tool 70 so that the bump 2a, the lead pattern 4a and the bump 2b, the lead pattern 4b may be indirectly thermal pressure fixed.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to semiconductor devices, and particularly to TAB (Tape
The present invention relates to a semiconductor device that improves packaging density by mounting chip bumps on both sides of a tape carrier in the Automated Bonding (Automated Bonding) technology.

[Prior Art] FIG. 2A is a cross-sectional view showing a semiconductor device using the conventional TAB technology.

In the figure, bumps 2 are formed in advance on the surface of a chip 1 such as a large-scale integrated circuit with the size of a sea urchin fly.
A lead pattern 4 is bonded to. This lead pattern 4 is a part of the wiring pattern of the tape carrier, which is composed of an insulating tape (not shown) and a wiring pattern formed on one surface thereof. The lead pattern 4 is used to take out signals from the chip 1 to the outside and to input signals from the outside to the chip 1.

FIG. 2B is a cross-sectional view showing a method of bonding the lead pattern of the tape carrier to the bumps of the chip with respect to the semiconductor device of FIG. 2A.

In the figure, a bonding table 5 is provided with a vacuum hole 6, and a bonding tool 7 is provided with a heater 8.

To bond lead pattern 4 to bump 2,
First, the chip 1 is placed on the front surface 5f of the bonding table 5, and the back surface of the chip 1 is suctioned through the vacuum hole δ to fix the chip 1 on the front surface 5f.

Next, the lead pattern 4 is aligned with the bump 2.

Next, while pressing the surface 7a of the bonding tool 7 firmly onto the surface of the lead pattern 4, the lead pattern 4 is
．． The lead pattern 4 is bonded to the bump 2 by heating the bump 2.

[Problems to be solved by the invention] Semiconductor devices using conventional TAB technology are assembled as described above, but since only one surface of the tape carrier is used, the packaging density of the semiconductor devices is low. There was a point.

The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to obtain a semiconductor device whose packaging density can be doubled compared to that of conventional semiconductor devices.

Means for Solving Problem c] The semiconductor device according to the present invention includes a first chip on a first chip surface.
a second bump is formed on the second chip surface, a first lead pattern is formed on one surface of the insulating tape, a second lead pattern is formed on the other surface, and a second bump is formed on the second chip surface. One lead pattern is bonded to a first bump, and a second lead pattern is bonded to a second bump.

[Operation] In this invention, the first lead pattern formed on one surface of the insulating tape is connected to the first bump formed on the first chip surface, and the first lead pattern formed on the other surface of the insulating tape is connected to the first bump formed on the first chip surface. Since the second lead pattern is bonded to the second bump formed on the surface of the second chip, the packaging density can be doubled compared to that of conventional semiconductor devices.

〔Example] Embodiments of the present invention will be described below with reference to the drawings.

In the description of this embodiment, the description of parts that overlap with the description of the conventional technology will be omitted as appropriate.

FIG. 1A is a cross-sectional view showing a semiconductor device using TAB technology, which is an embodiment of the present invention.

In the figure, bumps 2a are on the surface of chip 18, and chip 1
Bumps 2b are formed on the surface b.

Lead patterns 4a and 4 are formed on one surface and the other surface of an insulating tape, for example, a polyimide tape 3, respectively.
b is formed. Lead pattern 4a is bump 2a
In addition, the lead pattern 4b is bonded to the bump 2b. These lead patterns 4a and 4b are the polyimide tape 3, a first wiring pattern and a second wiring pattern formed on the blade surface and the other surface of the polyimide tape 3, respectively.
This is a part of the first wiring pattern and the second wiring pattern of the tape carrier composed of the wiring pattern. Lead patterns 4a and 4b take out signals from chips 1a and 1b, respectively, to the outside,
It is also used to input external signals to the chips 1a and 1b.

In this way, the lead patterns 4a and 4 formed on one surface and the other surface of the polyimide tape 3, respectively.
b are respectively bumps 2a formed on the surface of the chip 1a.
By bonding to the bumps 2b formed on the surface of the chip 1b, the packaging density of this semiconductor device can be increased to twice that of conventional semiconductor devices.

FIG. 1B is a cross-sectional view showing a method of bonding the lead pattern of the tape carrier to the bumps of the chip in the semiconductor device of FIG. 1A.

In the figure, the bonding table 50 has a recess 50c1.
A vacuum hole 60 and a heater 8G are provided. In addition, the bonding tool 70 has a recess 70c and a vacuum hole 61.
and a heater 81.

To bond the lead patterns 4a and 4b to the bumps 2a and 2b, respectively, first place the chip 1a with its surface facing upward in the recess 50c of the bonding table 50, and vacuum the back surface of the chip 1a through the vacuum hole 60. The chip 1a is fixed in the recess 50c. next,
The lead pattern 4a is aligned with the bump 2a. Next, the chip 1b with its surface facing downward is put into the recess 70c of the bonding tool 70, and IIi of the chip 1b is sucked through the vacuum hole 61 to move the chip 1b into the recess 70c.
Fixed to. Next, bump 2b is aligned with lead pattern 4b. Next, by pressing the bonding table 50 against the chip 1a, the surface of the bump 2a is pressed against the surface of the lead pattern 48, while heating the bump 2a and the lead pattern 4a with the heater 80, and by pressing the bonding tool 70 against the chip 1b, the surface of the bump 2b is heated. While applying the bump 2b to the surface of the lead pattern 4b, use the heater 81 to remove the bump 2b and the lead pattern 4b.
is heated, thereby converting the lead pattern 4a into the bump 2.
In step a, the lead pattern 4b is simultaneously bonded to the bump 2b by gigantic bonding.

In bonding using the conventional TAB technique, as shown in FIG. 2B, the bump 2 and the lead pattern 4 can be bonded directly by thermocompression using the bonding tool 7. However, as in this embodiment, the tape carrier In the structure where both sides of the chip are gigang bonded to the bumps of two chips,
Bump 2a and lead pattern 4a, and bump 2
b and the lead pattern 4b cannot be directly bonded by thermocompression. Therefore, as shown in FIG. 1B, the bonding table 5
0 and bonding tool 70, respectively.
By providing heaters 80 and 81 along the surfaces of the recesses 50c and 70c, respectively, the bumps 2a, lead patterns 4a and bumps 2b, and lead patterns 4b are heated from the side and back surfaces of the chips 1a and 1b, respectively. The bonding table 50 presses the back surface of the chip 1a, and the bonding tool 70 presses the back surface of the chip 1b. It can be heat-pressed.

[Effects of the Invention] As described above, according to the present invention, the first lead pattern formed on one surface of the insulating tape is bonded to the first bump formed on the first chip surface, and the first lead pattern formed on one surface of the insulating tape is bonded to the first bump formed on the first chip surface. The second lead pattern formed on the other surface is
Since the semiconductor device is bonded to the second bump formed on the surface of the chip, it is possible to obtain a semiconductor device whose packaging density can be doubled compared to that of conventional semiconductor devices.

[Brief explanation of the drawing]

FIG. 1A is a cross-sectional view showing a semiconductor device using TAB technology, which is an embodiment of the present invention. FIG. 1B is a cross-sectional view showing a method of bonding the lead pattern of the tape carrier to the bumps of the chip in the semiconductor device of FIG. 1A. FIG. 2A is a cross-sectional view showing a semiconductor device using conventional TAB technology. FIG. 2B is a cross-sectional view showing a method of bonding the lead pattern of the tape carrier to the bumps of the chip with respect to the semiconductor device of FIG. 2A. In the figure, 1. la, lb are chips, 2, 2a, 2
b is a bump, 3 is a polyimide tape, 4° 4a, 4b is a lead pattern, 5.50 is a bonding table, 6
．． 60.61 is a vacuum hole, 7.70 is a bonding tool, and 8.80.81 is a heater. Note that the same reference numerals in each figure indicate the same or corresponding parts.

Claims (1)

[Claims] A first chip, a first bump formed on the surface of the first chip, a second chip, and a second bump formed on the surface of the second chip, an insulating tape; a first lead pattern formed on one surface of the insulating tape; and a second lead pattern formed on the other surface; 1. A semiconductor device, wherein the second lead pattern is bonded to a bump, and the second lead pattern is bonded to the second bump. (2) The semiconductor device according to claim 1, wherein the insulating tape is a polyimide film.