JPS6384019A - Semiconductor processor - Google Patents

Abstract

PURPOSE:To obtain a wide substrate irradiation area thereby to reduce the size of a semiconductor processor by providing a non-light-emitting unit in a lamp profile in an ultraviolet light source used for an optical CVD unit to obtain a uniform surface to be irradiated. CONSTITUTION:The shape of a lamp is so constructed that a non-light-emitting unit is surrounded by a light emitting unit, such as a spiral shape. The thus constructed ultraviolet light source lamp is mounted as an ultraviolet light source in a reaction chamber. A wider substrate irradiation area than a conventional one can be taken by using the lamp of such a shape. Accordingly, since wider irradiation area can be taked by a relatively small processor, the size of the processor can be reduced.

Description

DETAILED DESCRIPTION OF THE INVENTION (a) Field of Application of the Invention The present invention provides a semiconductor processing apparatus that can be used in the industrial field, particularly in the field of semiconductor device manufacturing technology.

(b) In the conventional technology industry field, especially in the field of semiconductor device manufacturing technology, ultraviolet light is used to perform 5tnllzn*z (n=1+2+3 4
+) Light C that decomposes and reacts the silanes to form a thin film.
The VO method, as well as the optical cleaning method and optical etching method for removing organic matter from the semiconductor surface, are attracting attention in VLSI manufacturing. Especially when trying to form a thin film uniformly over a large area,
When processing large-area semiconductor substrates or glass substrates simultaneously, the amount of light incident on the substrate surface and the thin film formation surface, that is, the irradiance, is important for the film thickness on the substrate or the uniformity of processing. Becomes a parameter.

For example, as shown in FIG. 1, there is clearly a correlation coefficient between the thickness of a film formed on a substrate and the irradiance of 185 nm light. Note that the correlation coefficient is 0.7 in this case.
It is.

Conventionally, when trying to uniformly form or process a film on a large-area substrate, it is assumed that a light-emitting body with an area larger than the area to be formed or treated, ideally a surface light-emitting body, can be obtained. Consideration has been given to the shape and placement of the body. For example, in order to uniformly form or process a film on an area of 300 mm x 300 mm, straight tube-shaped low-pressure mercury lamps with a light emission length of 400 mm are arranged at equal pitches over a width of 400 mm.

If this is the case, a pseudo surface light emitter can be obtained,
Theoretically, the area of a surface light emitter must be infinite, and in the case of a light emitter with a finite area, an irradiance distribution will occur on the irradiation surface.

Therefore, in reality, it is used under conditions where the area of the light emitter can be considered to be sufficiently larger than the irradiation area, that is, the area to be deposited or processed. However, if the area to be coated or processed is to be increased, the area of the light emitter must be increased accordingly, which did not pose a problem when the area to be coated or processed was small. Problems have arisen, such as heat generation from the light emitter, increased device size due to an increase in the area of the light emitter, and increased cost.

Therefore, there has been a need for an ultraviolet light source lamp that has a light emitting area as small as possible relative to the area to be film-formed or processed and has a small irradiance distribution on the irradiation surface.

(c) Purpose of the Invention The present invention satisfies the above-mentioned requirements and provides a semiconductor processing device that can provide a wide area for film formation or processing, which was not possible with conventional semiconductor processing devices. .

(d) Structure of the Invention In order to achieve the above object, the present invention, as stated in the claims, provides that ``Mercury only or mercury and A lamp for an ultraviolet light source filled with a rare gas such as Ar or Kr has a structure in which the lamp has a non-light-emitting part in its outer shape, and the light-emitting part surrounds the non-light-emitting part when the lamp is viewed two-dimensionally. An ultraviolet light source lamp characterized by having a A semiconductor processing device characterized by a wide uniform irradiation area when used.

The irradiance of light of 185r+m when the lamp is designed based on the conventional idea, that is, a surface light emitter, is calculated, and the substrate surface irradiance is shown in FIG. 2 as a three-dimensional graph. The size of this light emitter is 150mm x 15
This is the case where it is 0 mm. The X-axis and Y-axis indicate the position of the irradiation surface, and the Z-axis indicates the position at a certain distance from the light emitter.
The irradiance of light in nm is shown on an arbitrary scale. As is clear from the figure, the radiation intensity of 185 nm light is strong at the center of the substrate surface, and the radiation intensity becomes weaker as you move away from the center and get closer to the periphery of the irradiation surface.
Within the plane of the substrate, the radiation intensity of 185r+m light is ±10%
The area falling within this range is less than 18% of the area of the light emitter. Therefore, in order to make the irradiance uniform on the substrate surface, the shape and arrangement of the light emitters should be designed so that the irradiance at the center is lowered and the illuminance at the periphery is equal to that at the periphery. Since the illuminance at the center of the substrate surface is mainly controlled by the illumination at the center of the light emitter, consider a light emitter without a light emitting part at the center. Practically speaking, a spiral light emitter that can be constructed from a single bulb is desirable. This is because in the case of a spiral lamp, since the lamp is often installed in a vacuum chamber, the number of current introduction terminals provided in the vacuum chamber can be minimized and cooling can be facilitated.

FIG. 3 shows the shape of the light emitter that satisfies the above design conditions, and FIG. 4 shows the calculation results of the illuminance of 185 nm light when irradiated with the light emitter. As is clear from FIG. 4, there are parts where the irradiance of 185 nm light is uniform, and the area of the substrate within the range of ±10% expands to 85%.

Conventionally, a uniform surface light emitter was considered ideal in order to obtain a uniform irradiation surface. It has a very significant feature in that a uniform irradiation surface can be obtained by providing a section.

In semiconductor processing equipment using the above lamps, conventionally 18%
Approximately 85% of the substrate surface, which could previously only be used, can now be used, making it possible to significantly save equipment costs, reactive gases, electric power, etc.

Examples are shown below.

Example 1 A pulp for a light source having the shape shown in Fig. 3 was prepared, electrodes were provided at both ends, and a specified amount of mercury and a buffer gas such as Ar or Kr were sealed to make a lamp for an ultraviolet light source. light C
The VD device was configured. The external shape of the lamp is 150mmφ, the tube diameter is 4mmφ, and the light emitting length is 900mm. Introducing 5il14 and 02 as reaction gases and N2 as a carrier gas into the reaction chamber of the photoCVD apparatus to perform a photochemical reaction,
A SiO□ film was formed. As a result, the area where the film thickness of the formed film falls within the range of ±10% is 130 mmφ, and in the case of a conventional lamp, the film thickness falls within the range of ±10% even though the outer diameter is the same as 150 mmφ. Area is 65m
It was confirmed that it had expanded significantly compared to the previous mΦ.

Although an optical CVO device was adopted in this example, the present invention is applicable to a device using an ultraviolet light source.
Since it is characterized by the ability to irradiate light with a wavelength of 85 nm, it can be expected to have a wide range of applications, including not only optical CVO equipment but also optical cleaning equipment, optical etching equipment, etc. Also, ultraviolet light, especially 185 nm
This is particularly effective when it is difficult to condense the light using a lens, such as light in a wavelength range with low transmittance. In reality, when irradiating a large area, such as a 4-size substrate, it is almost impossible to construct a lens from both technical and cost standpoints, but by using the present invention, it is easy to irradiate a large area. becomes.

Example 2 Four 6-inch wafers were installed in a large reaction chamber, and the four lamps described in Example 1 were arranged so that each wafer was irradiated, one lamp per wafer. A reaction gas and a carrier gas were introduced into the chamber in the same manner as in Example 1, and ultraviolet light (185 nm) was irradiated to form a SiO□ film. The film thickness distribution of each wafer is the same as in Example 1.
It was within 10%, and the variation in average film thickness between each wafer was also within ±5%.

Although the device used in this example requires many current introduction terminals to be installed in the light source chamber, it is not necessary to manufacture large lamps, which reduces costs, and the ability to process many lamps at the same time saves material gas and time. We were able to save money.

In other words, it is not necessary to match the size of the ultraviolet light lamp to the size of the reaction chamber (it is sufficient to match the size of the lamp to the size of the irradiation surface, and use the same lamp in multiple stages as necessary).

(E) Effect By using the semiconductor processing apparatus according to the present invention, a wider substrate irradiation area than before can be obtained. That is,
We were able to significantly reduce the cost per unit of processed substrate. Furthermore, since a relatively small device can cover a wide irradiation area, the device can be downsized.

[Brief explanation of the drawing]

FIG. 1 shows the correlation between illuminance and film thickness (Si(h)). FIG. 2 shows the irradiance distribution of a conventional lamp. FIG. 3 shows an example of a lamp used in the present invention. FIG. 4 shows the irradiance distribution of the lamp used in the present invention.

Claims (1)

[Claims] 1. In an ultraviolet light source lamp in which only mercury or mercury and a rare gas such as Ar or Kr is sealed in a light source bulb maintained at a reduced pressure than atmospheric pressure, there is no non-containing material in the lamp outer shape. An ultraviolet light source lamp having a light emitting part and having a structure in which the light emitting part surrounds a non-light emitting part when the lamp is viewed two-dimensionally is placed in a reaction chamber or in a light source room adjacent to the reaction chamber. A semiconductor processing apparatus characterized in that the ultraviolet light source is installed as an ultraviolet light source, and when forming a semiconductor film or processing a semiconductor surface using the ultraviolet light source, a wide uniform irradiation area is obtained by using the light source. 2. In claim 1, the object is to install the ultraviolet light source lamp as an ultraviolet light source in a reaction chamber or a light source chamber adjacent to the reaction chamber, and to form a film by a photochemical reaction using the ultraviolet light. semiconductor processing equipment. 3. In claim 1, the object is to install the ultraviolet light source lamp as an ultraviolet light source in a reaction chamber or a light source chamber adjacent to the reaction chamber, and to perform a cleaning process on a semiconductor surface using the ultraviolet light. semiconductor processing equipment. 4. In claim 1, the object is to install the ultraviolet light source lamp as an ultraviolet light source in a reaction chamber or a light source chamber adjacent to the reaction chamber, and to perform an etching process on a semiconductor using the ultraviolet light. semiconductor processing equipment.