JPS63815A - Magnetic recording medium - Google Patents

Magnetic recording medium

Info

Publication number
JPS63815A
JPS63815A JP61143252A JP14325286A JPS63815A JP S63815 A JPS63815 A JP S63815A JP 61143252 A JP61143252 A JP 61143252A JP 14325286 A JP14325286 A JP 14325286A JP S63815 A JPS63815 A JP S63815A
Authority
JP
Japan
Prior art keywords
film
substrate
weight
recording medium
magnetic layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61143252A
Other languages
Japanese (ja)
Other versions
JPH071536B2 (en
Inventor
Ryuji Sugita
龍二 杉田
Kiyokazu Toma
清和 東間
Kazuyoshi Honda
和義 本田
Taro Nanbu
太郎 南部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP61143252A priority Critical patent/JPH071536B2/en
Priority to EP87104996A priority patent/EP0247334B1/en
Priority to DE8787104996T priority patent/DE3773050D1/en
Publication of JPS63815A publication Critical patent/JPS63815A/en
Publication of JPH071536B2 publication Critical patent/JPH071536B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Magnetic Record Carriers (AREA)
  • Thin Magnetic Films (AREA)

Abstract

PURPOSE:To obtain a perpendicularly magnetically anisotropic film having high S/N even if a substrate having low heat resistance is used by forming a magnetic layer consisting of Co, Cr, Ni, Al, and Cu having the compsn. in a specific range and trace impurities on the substrate. CONSTITUTION:Even if the substrate 1 such as PE terephthalate film having the low heat resistance is used, the perpendicularly magnetically anisotropic film having the high S/N is obtd. by forming the magnetic layer consisting of 7-26wt% Cr, 5-30wt% Ni, 0.1-4wt% Al, <=4wt% Cu and the balance Co and trace impurities on such substrate 1. The productivity of the tape-shaped perpendicular magnetic recording medium is improved if the magnetic layer is formed by using a vacuum evaporation device. The substrate 1 travels is an arrow A direction along a cylindrical can 2. A mask 5 is disposed between an evaporating source 6 and the can a the evaporating atoms stick through a slit S onto the substrate 1.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は高密度記録特性の優れた垂直記録用の薄膜型磁
気記録媒体に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a thin film magnetic recording medium for perpendicular recording having excellent high-density recording characteristics.

従来の技術 従来、短波長記録特性の優れた磁気記録方式として、垂
直記録方式がある。この方式においては垂直磁気異方性
を有する垂直磁気記録媒体が必要となる。このような媒
体に信号を記録すると、残留磁化は媒体の膜面に略垂直
方向を向く。従って信号が短波長になる程媒体内反磁界
は減少し、浸れた再生出力が得られる。垂直磁気異方性
膜として、従来、最も優れていると考えられているもの
は、高分子材料あるいは非磁性金属等の非磁性基板上に
、直接に、あるいはパーマロイ膜等の軟磁性層を介して
、CoとCrを主成分とし垂直磁気異方性を有する磁性
層(以下この磁性層をCo −Orr垂直磁気異方性膜
呼ぶ)をスパッタ法あるいは真空蒸着法により形成した
ものである。
2. Description of the Related Art Conventionally, a perpendicular recording method has been known as a magnetic recording method with excellent short wavelength recording characteristics. This method requires a perpendicular magnetic recording medium having perpendicular magnetic anisotropy. When a signal is recorded on such a medium, the residual magnetization is oriented approximately perpendicular to the film surface of the medium. Therefore, as the wavelength of the signal becomes shorter, the demagnetizing field within the medium decreases, and a immersed reproduction output can be obtained. The most excellent perpendicular magnetic anisotropic films have been those that are deposited directly on a nonmagnetic substrate such as a polymeric material or nonmagnetic metal, or through a soft magnetic layer such as a permalloy film. A magnetic layer containing Co and Cr as main components and having perpendicular magnetic anisotropy (hereinafter this magnetic layer will be referred to as a Co-Orr perpendicular magnetic anisotropic film) is formed by sputtering or vacuum evaporation.

発明が解決しようとする問題点 スパンタ法や真空蒸着法で満足な記録再生特性を有する
C o −Or垂直磁気異方性膜を作製する際には、基
板温度を200°C程度にする必要がある。
Problems to be Solved by the Invention When producing a Co-Or perpendicular magnetic anisotropic film with satisfactory recording and reproducing characteristics using the spunter method or vacuum evaporation method, it is necessary to keep the substrate temperature at about 200°C. be.

200’C以下でも垂直磁気異方性膜が得られるが、膜
面に垂直方向の保磁力Hc上が小さい。特に、量産に最
適と考えられている真空蒸着法では、200°C以下の
基板温度ではHc土は20000以下である。また磁化
機構も、垂直磁気記録媒体として・jしている磁[上回
転のみによらず、磁壁移動による割合が多い。その結果
、再生出力が低く、またノイズも高くなり、高いS/N
が得られない。−方、200°C程度の基板温度で、G
 o −Or垂直磁気異方性膜を形成すると、Hc上は
500〜100000程度になり、磁化機構は磁化回転
が主になる。この場合には再生出力が高く、ノイズは低
くなり、高いS/Nが得られる。
A perpendicular magnetic anisotropic film can be obtained even at temperatures below 200'C, but the coercive force Hc in the direction perpendicular to the film surface is small. In particular, in the vacuum evaporation method, which is considered optimal for mass production, the Hc concentration is 20,000 or less at a substrate temperature of 200° C. or less. In addition, the magnetization mechanism is not only due to magnetic rotation as perpendicular magnetic recording media, but also largely due to domain wall movement. As a result, the playback output is low, the noise is high, and the S/N is high.
is not obtained. - On the other hand, at a substrate temperature of about 200°C, G
When an o -Or perpendicular magnetic anisotropy film is formed, the Hc becomes about 500 to 100,000, and the magnetization mechanism is mainly magnetization rotation. In this case, the reproduction output is high, the noise is low, and a high S/N ratio is obtained.

以上の様に、高いS/Nを有する垂直磁気異方性膜を作
製するためには、基板温度を200°C程度にする必要
がある。このことは、現在磁気テープやフロノビ−ディ
スクに大量かつ安定に使用されている安価なポリエチレ
ンテレフタレートフィルム等の耐熱性の悪い基板を使用
することが困難であることを意味する。ポリエチレンテ
レフタレートフィルム等の耐熱性の悪い基板を使用出来
ないと、実際に垂直磁気異方性膜を量産することは非常
に困難である。ポリエチレンテレフタレートフィルムを
基板として使用する際【ば、基板温度を100’C以下
にする必要があり、このための条件を見い出すことが、
現時点において最大の課題である。
As described above, in order to fabricate a perpendicular magnetic anisotropic film having a high S/N ratio, it is necessary to set the substrate temperature to about 200°C. This means that it is difficult to use substrates with poor heat resistance, such as inexpensive polyethylene terephthalate films, which are currently used in large quantities and stably in magnetic tapes and flonobie disks. Unless a substrate with poor heat resistance such as a polyethylene terephthalate film can be used, it is extremely difficult to actually mass-produce perpendicular magnetic anisotropic films. When using polyethylene terephthalate film as a substrate, it is necessary to keep the substrate temperature below 100'C, and it is important to find the conditions for this.
This is the biggest challenge at the moment.

問題点を解決するための手段 この目的を老成するため本発明は基板上にCo。Means to solve problems In order to achieve this purpose, the present invention deposits Co on a substrate.

Cr+ Ni、AJ あるいはGo、Cr、Ni、人1
.Cu及び微量不純物から成る磁性層を形成するもので
ある。
Cr+ Ni, AJ or Go, Cr, Ni, person 1
.. A magnetic layer made of Cu and trace impurities is formed.

作用 従来のGo−Cr垂直磁気異方性膜に対し、本発明の組
成を有する膜は、基板としてポリエチレンテレフタレー
トフィルムが使用可能な100°C以下の基板温度で、
高Hc上になシうる。すなわち100’C以下の基板温
度においても、高いS/Nを有する垂直磁気異方性膜が
得られる。
Function: In contrast to the conventional Go-Cr perpendicular magnetic anisotropic film, the film having the composition of the present invention can be used at a substrate temperature of 100°C or less, where polyethylene terephthalate film can be used as a substrate.
Can be used on high Hc. That is, a perpendicular magnetic anisotropic film having a high S/N ratio can be obtained even at a substrate temperature of 100'C or less.

実施例 以下に本発明の実施例について説明する。真空蒸着法に
よシ、膜厚10μmのポリエチレンテレフタレートフィ
ルム上に、Co23重ffi%Cr。
Examples Examples of the present invention will be described below. Co23 heavy ffi%Cr was deposited on a 10 μm thick polyethylene terephthalate film by vacuum evaporation.

Go−20重量%Cr−20重量%Ni、Co−19重
量%0r−30重量%Ni、Go−23重量係Cr−〇
、4重量%ムl、Co−19重量%Cr−6重量%A1
.C0−20重量%Cr−19重量%Ni−〇4重量%
人j、Co−18重量%Cr−18重量%N=−3重量
%人lなる組成の膜を形成し、これらの膜の静磁気特性
、結晶配向性及び記録再生特性を調べた。膜を作製する
際に用いた真空蒸着装置の内部構造の概略を第1図に示
す。基板1は円筒状キャン2に沿って矢印人の向きに走
行する。蒸発源6と円筒状キャン2との間にはマスク6
が配置されており、蒸発原子はスリットSを通って基板
1に付着する。3,4はそれぞれ基板1の供給ロール及
び巻取りロールである。第1図に示される様な真空蒸着
装置を用いて磁性層を形成すると、テープ状の垂直磁気
記録媒体が非常に生産性良く得られる。蒸着の際には、
磁性薄膜の堆積速度を6000A/秒とし、膜厚、飽和
磁化Msをそれぞれ2500人及び320〜360em
u/。
Go-20% by weight Cr-20% by weight Ni, Co-19% by weight 0r-30% by weight Ni, Go-23% by weight Cr-〇, 4% by weight Ml, Co-19% by weight Cr-6% by weight A1
.. C0-20% by weight Cr-19% by weight Ni-4% by weight
Films having the following compositions were formed: Co-18% by weight, Cr-18% by weight, N=-3% by weight, and the magnetostatic properties, crystal orientation, and recording/reproducing properties of these films were investigated. FIG. 1 shows an outline of the internal structure of the vacuum evaporation apparatus used to prepare the film. The substrate 1 runs along the cylindrical can 2 in the direction of the arrow. A mask 6 is provided between the evaporation source 6 and the cylindrical can 2.
are arranged, and the evaporated atoms pass through the slit S and adhere to the substrate 1. 3 and 4 are a supply roll and a take-up roll for the substrate 1, respectively. When a magnetic layer is formed using a vacuum evaporation apparatus as shown in FIG. 1, a tape-shaped perpendicular magnetic recording medium can be obtained with very high productivity. During vapor deposition,
The deposition rate of the magnetic thin film was 6000 A/sec, and the film thickness and saturation magnetization Ms were 2500 and 320 to 360 em, respectively.
u/.

とした。なお、膜中のCr濃度及びAJ濃度は、蒸着時
に粒状のOr及びAlを蒸発源の中に供給することによ
り調整した。また、蒸着時の円筒状キャン表面の温度ば
80’Cとし念。
And so. Note that the Cr concentration and AJ concentration in the film were adjusted by supplying particulate Or and Al into the evaporation source during vapor deposition. Also, make sure that the temperature of the cylindrical can surface during vapor deposition is 80'C.

蒸着膜の静磁気特性は振動試料型磁力計で測定し、膜面
に垂直方向の保磁力Hc上、膜面内の保磁力Ha、を求
めた。結果を第1表にまとめである。
The magnetostatic properties of the deposited film were measured using a vibrating sample magnetometer, and the coercive force Hc perpendicular to the film surface and the coercive force Ha within the film surface were determined. The results are summarized in Table 1.

結晶配向性はX線分析装置によりΔθ5oを測定し評価
した。Δθ5oも第1表にまとめである。なおΔθ5o
は稠密六方構造を有する磁性薄膜の(002)面に関す
るロッキング曲線の半値幅であり、C軸の膜面に垂直方
向への配向度合いを示す。−般にΔθ5oの小さい膜程
C軸が膜面に垂直方向に良く配向しており垂直磁気異方
性エネルギーが犬きく、垂直磁気記録媒体として優れて
いる。記録再生特性はMn−Znフェライトから成るギ
ャップ長0.14μmのリング形ヘッドを用いて測定し
た。120KFRP工の信号の再生出力、ノイズ及びS
/Nを第1表に示す。なお120KFRPIとは1イン
チ当たり120000回磁化反転のあるディジタル信号
の記録密度である。また、再生出力、ノイズ及びS/N
ともに、Co−23重量%Or膜を基準、すなわちOd
B  として相対値で示しである。
Crystal orientation was evaluated by measuring Δθ5o using an X-ray analyzer. Δθ5o is also summarized in Table 1. Note that Δθ5o
is the half-width of the rocking curve for the (002) plane of a magnetic thin film having a dense hexagonal structure, and indicates the degree of orientation of the C-axis in the direction perpendicular to the film surface. - In general, the smaller the Δθ5o, the better the C-axis is oriented perpendicular to the film surface, the higher the perpendicular magnetic anisotropy energy, and the better the film is as a perpendicular magnetic recording medium. The recording and reproducing characteristics were measured using a ring-shaped head made of Mn-Zn ferrite and having a gap length of 0.14 μm. 120K FRP signal reproduction output, noise and S
/N is shown in Table 1. Note that 120KFRPI is a recording density of a digital signal in which magnetization is reversed 120,000 times per inch. Also, playback output, noise and S/N
Both are based on Co-23wt%Or film, that is, Od
B is shown as a relative value.

第1表から、従来の組成であるCoo−23M量%Cr
膜ばHCJ−が1200e  と非常に低く、さらにH
cID方がHc上よりも大きく、磁壁移動が磁化機構に
かなりの割合を占めていることがわかる。
From Table 1, the conventional composition Coo-23M amount%Cr
Membrane HCJ- is very low at 1200e, and H
It can be seen that cID is larger than Hc, and domain wall movement accounts for a considerable proportion of the magnetization mechanism.

また、Go−23重量%Cr膜の120 KFRPIに
おける再生出力の絶対値は150μVpp/rtrx。
Further, the absolute value of the reproduction output of the Go-23 weight % Cr film at 120 KFRPI is 150 μVpp/rtrx.

T、m7秒である。150μVP、/pat、T、 m
 7秒とは、ヘッドのトランク幅をI MM、ヘッドの
コイル巻数を1ターン、ヘッドと媒体間の相対速度を1
m/秒と換算した場合の出力が150μvp−pという
ことである。Go−20重量%Cr−20重量%NN模
膜びCo−19重量%0r−30重量%Ni膜の特性を
見ると、N工をCo−0rに入れるとHc上は多少大き
くなるが、Δθ5oが大きくなり結晶配向性が劣化して
しまうことがわかる。
T, m7 seconds. 150μVP, /pat, T, m
7 seconds means that the trunk width of the head is IMM, the number of turns of the head coil is 1 turn, and the relative speed between the head and the medium is 1.
This means that the output when converted to m/sec is 150 μvp-p. Looking at the characteristics of the Go-20wt%Cr-20wt%NN simulated film and the Co-19wt%0r-30wt%Ni film, it is found that when N is added to Co-0r, the Hc becomes somewhat larger, but Δθ5o It can be seen that the crystal orientation becomes larger and the crystal orientation deteriorates.

Δθ5oが10’以下であれば、記録再生特性の劣化は
殆どないが、1c3を越えると再生出力、特に短波長領
域における再生出力が低下する。Go −CrにN1を
添加しただけでは再生出力、ノイズ及びS/Nの改善は
あまり見られない。
When Δθ5o is 10' or less, there is almost no deterioration in the recording and reproducing characteristics, but when it exceeds 1c3, the reproduction output, especially in the short wavelength region, decreases. Only adding N1 to Go-Cr does not significantly improve reproduction output, noise, and S/N.

次にGo−Orにλβを添加した膜について説明する。Next, a film in which λβ is added to Go-Or will be described.

Go −23重量%0r−0,4重量%Al膜は、Hc
上はGo−23重量%Crに比べわずかに高くなってい
るが、Δθ5oも多少大きくなっている。S / Nの
改善は2’dB程度である。またAl添加量を増加させ
たGo−1e;z重量%Cr−〇重量%AJ膜は、Hc
上は30006 と高くなっているが、Δθ5oが26
と非常に大きくなっており、膜面の垂直方向に記録する
ことが困難になっている。その結果120KFRPIの
再生出力は、Go −23重量%Cr膜に対して一6d
Bと低くなっている。以上の様にGo−Orに人eを添
加しただけでは、S/Hの改善はあまり見らt′Lない
。Al添加量を4重量係よりも多くすると、膜面に垂直
方向へのC軸の配向が大幅に乱れてしまい、垂直磁気異
方性膜ではなくなってしまう。
Go-23 wt% 0r-0,4 wt% Al film is Hc
The upper one is slightly higher than Go-23 weight % Cr, but Δθ5o is also somewhat larger. The S/N improvement is on the order of 2'dB. In addition, the Go-1e;zwt%Cr-〇wt%AJ film with increased Al addition
The upper one is high at 30006, but Δθ5o is 26
The size of the film is extremely large, making it difficult to record in the direction perpendicular to the film surface. As a result, the playback output of 120KFRPI is -6d for Go-23wt% Cr film.
It is low as B. As mentioned above, only by adding human e to Go-Or, there is not much improvement in S/H. If the amount of Al added is greater than 4% by weight, the orientation of the C-axis in the direction perpendicular to the film surface will be greatly disturbed, and the film will no longer be a perpendicular magnetic anisotropic film.

最後にGo−1rにNi及びAJを添加した膜について
説明する。C0−20重量%0r−19重量%N1−〇
・4重量%Al膜及びGo−18重量%Cr−18重量
%Ni−3重量俤Al膜ともに、Hc上は60006を
越えており、かつΔθ50は16以下である。これらの
膜の記録再生特性はほぼ同様であり、Go−23重量%
Cr膜に対し、120KFRP工の再生出力がedB高
く、ノイズは7dB低くなっている。その結果S/Nは
13dB高くなっている。120KFRPr Kおける
再生出力の絶対値は30071 Vp−p/ Ml −
T 6m 7秒と非常に高い値である。また、Hc上が
Ha/よりも大きくなっており、磁化回転が磁化機構の
主な要因になっている。
Finally, a film obtained by adding Ni and AJ to Go-1r will be described. For both the C0-20wt%0r-19wt%N1-0.4wt%Al film and the Go-18wt%Cr-18wt%Ni-3wtAl film, the Hc value exceeds 60006, and Δθ50 is 16 or less. The recording and reproducing properties of these films are almost the same, and Go-23% by weight
Compared to the Cr film, the reproduction output of the 120K FRP material is edB higher and the noise is 7 dB lower. As a result, the S/N is 13 dB higher. The absolute value of the playback output at 120KFRPr K is 30071 Vp-p/Ml −
T 6m 7 seconds, which is a very high value. Furthermore, Hc is larger than Ha/, and magnetization rotation is the main factor in the magnetization mechanism.

Go −Cr −Ni−41にさらにCu を4重量%
以下添加すると、Hc上が増加し600〜7000eに
なる。この様な膜では、12oKFRPIにおける再生
出力は、Cuを添加しない膜とほぼ同程度であるが、ノ
イズが1〜3dB低下し、S/Nが向上する。4重Rs
を越える量のCuを添加するとΔθ5oは10以上にな
ってしまい、短波長領域における再生出力が大福テ低下
する。
Add 4% by weight of Cu to Go-Cr-Ni-41
If added below, the Hc value will increase to 600 to 7000e. With such a film, the reproduction output at 12oK FRPI is approximately the same as that of a film without Cu added, but the noise is reduced by 1 to 3 dB and the S/N is improved. Quadruple Rs
If Cu is added in an amount exceeding 10, Δθ5o becomes 10 or more, and the reproduction output in the short wavelength region decreases by a large amount.

比較のために、円筒状キャン表面の温度を200°Cと
して、第1表に示された膜と全く同様の方法で、膜厚1
2μmのポリイミドフィルム上ニ形成した、膜厚250
0大のCo 〜23重量係Or膜の、第1表と同様の特
性を第2表に示す。
For comparison, the temperature of the cylindrical can surface was set at 200°C, and a film thickness of 1
Film thickness: 250 mm formed on 2 μm polyimide film
Table 2 shows the same properties as in Table 1 for the 0 Co to 23 weight coefficient Or films.

第2表 第1表と第2表を比較するとわかる様に、Qo −cr
 KNi及びA、lを添加した膜は、ポリエチレンテレ
フタレートフィルムが使用可能な、60’Cというキャ
ン表面温度で作製し念にもかかわらず、耐熱性のあるポ
リイミドフィルム上に、キャン表面温度200°Cで作
製したGo−Cr膜とほぼ同様の静磁気特性及び記録再
生特性を有する。なお、Δθ5oはCo −Cr K 
Ni 及ヒkl 全添加り、fcjNの方がGo−Cr
膜よりも犬きくなっているが、10°以下であれば記録
再生特性には殆ど影響を及ぼさない。
Table 2 As can be seen by comparing Tables 1 and 2, Qo -cr
The film doped with KNi, A, and l was prepared at a can surface temperature of 60°C, which is the temperature at which polyethylene terephthalate film can be used. It has almost the same magnetostatic properties and recording/reproducing properties as the Go-Cr film produced in . Note that Δθ5o is Co-CrK
Ni and Hkl all added, fcjN is more Go-Cr
Although the angle is sharper than that of the film, if the angle is 10° or less, it will hardly affect the recording and reproducing characteristics.

Go −Cr −Ni−Al膜あるいはCo −0r−
Ni −)、1−Cu膜におイテ、Cr添加量が7重量
%未満の場合には、垂直磁気異方性が不十分であり、垂
直記録が出来ない。その結果短波長領域の出力は、非常
に低い。Cr添加量が26重重量上り多い場合も、Ms
か小さくなり過ぎて出力が非常に低い。従ってCr添加
量は7〜26重量優の範囲にする必要がある。Ni添加
量に関しては、N工添加量が5重量%未満ではNlの効
果は見られない。また30重量%を越えると、垂直磁気
異方性が不十分になり、垂直記録が不可能になる。
Go -Cr -Ni-Al film or Co -0r-
If the amount of Cr added to the Ni-) or 1-Cu film is less than 7% by weight, the perpendicular magnetic anisotropy is insufficient and perpendicular recording cannot be performed. As a result, the output in the short wavelength region is very low. Even when the amount of Cr added is as high as 26%, Ms
It becomes too small and the output is very low. Therefore, the amount of Cr added needs to be within the range of 7 to 26% by weight. Regarding the amount of Ni added, if the amount of Ni added is less than 5% by weight, no effect of Nl is observed. If it exceeds 30% by weight, perpendicular magnetic anisotropy becomes insufficient and perpendicular recording becomes impossible.

ムl添加量が0・1重量多未満の場合には、人eの効果
は見られない。人l添加量が4重量St越えると、垂直
磁気異方性が不十分になり短波長領域における再生出力
は大幅に低下する。
When the amount of mulch added is less than 0.1 weight, no effect of human e is observed. If the amount added exceeds 4 weight St, the perpendicular magnetic anisotropy will become insufficient and the reproduction output in the short wavelength region will drop significantly.

以上においては、ポリエチレンテレフタレートフィルム
あるいはポリイミドフィルムを基板として用いた例につ
いて説明したが、これら以外の高分子フィルムあるいは
非磁性金属基板を用いても結果は変わらない。また、高
分子フィルムとC0−0r  、  Co −Cr −
Ni  、  Go  −Cr  −人J。
Although the above example uses a polyethylene terephthalate film or a polyimide film as a substrate, the results will not change even if a polymer film other than these or a nonmagnetic metal substrate is used. In addition, polymer films and C0-0r, Co-Cr-
Ni, Go-Cr-J.

Go−Or−Ni−ムl 、  Go −Or −Ni
 −Al−Cu膜との間にパーマロイ膜等の軟磁性膜、
T i。
Go-Or-Ni-mul, Go-Or-Ni
- A soft magnetic film such as a permalloy film between the Al-Cu film,
Ti.

Ge、  Si 、  l!20s等の非磁性膜を設け
ても、上記と同様の効果が得られた。
Ge, Si, l! Even when a non-magnetic film such as 20s was provided, the same effect as above was obtained.

発明の効果 本発明によれば、ポリエチレンテレフタレートフィルム
等の耐熱性の悪い基板を用いても、短波長領域において
高いS/Nを有する垂直記録用の薄膜型磁気記録媒体が
得られる。
Effects of the Invention According to the present invention, a thin film magnetic recording medium for perpendicular recording having a high S/N in a short wavelength region can be obtained even if a substrate with poor heat resistance such as a polyethylene terephthalate film is used.

【図面の簡単な説明】[Brief explanation of drawings]

図は真空蒸着装置の内部構造の概略図である。 1・・・・・・基板、2・・・・・・円筒状キセノ、3
・・・・・・供給口〜ル、4・・・・・・巻取リロール
、5・・・・・・マスク、6・・・・・・蒸発源。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名トー
1ト靭 2−一一μm冶弘f2ン 3・−イ久蛤トル 4−@叡ソ ・・ 5−−−7 ′zり 6’−−一巷セノに ハー−一走廿右肉
The figure is a schematic diagram of the internal structure of the vacuum evaporation apparatus. 1... Substrate, 2... Cylindrical xeno, 3
...... Supply port - le, 4... Take-up and reroll, 5... Mask, 6... Evaporation source. Name of agent Patent attorney Toshio Nakao and 1 other person To 1 Totsu 2-11 μm Nobuhiro f2 3. ---One-street Seno to Ha--One run to the right meat

Claims (2)

【特許請求の範囲】[Claims] (1)基板上にCo、Cr、Ni、AlあるいはCo、
Cr、Ni、Al、Cu及び微量不純物から成る磁性層
が形成された磁気記録媒体。
(1) Co, Cr, Ni, Al or Co on the substrate,
A magnetic recording medium in which a magnetic layer made of Cr, Ni, Al, Cu, and trace impurities is formed.
(2)Crが7〜26重量%、Niが5〜30重量%、
Alが0.1〜4重量%、Cuが4重量%以下、残部が
Co及び微量不純物である特許請求の範囲第1項記載の
磁気記録媒体。
(2) 7 to 26% by weight of Cr, 5 to 30% by weight of Ni,
2. The magnetic recording medium according to claim 1, wherein Al is 0.1 to 4% by weight, Cu is 4% by weight or less, and the remainder is Co and trace impurities.
JP61143252A 1986-04-03 1986-06-19 Magnetic recording medium Expired - Fee Related JPH071536B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP61143252A JPH071536B2 (en) 1986-06-19 1986-06-19 Magnetic recording medium
EP87104996A EP0247334B1 (en) 1986-04-03 1987-04-03 Magnetic recording medium
DE8787104996T DE3773050D1 (en) 1986-04-03 1987-04-03 MAGNETIC RECORDING CARRIER.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61143252A JPH071536B2 (en) 1986-06-19 1986-06-19 Magnetic recording medium

Publications (2)

Publication Number Publication Date
JPS63815A true JPS63815A (en) 1988-01-05
JPH071536B2 JPH071536B2 (en) 1995-01-11

Family

ID=15334423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61143252A Expired - Fee Related JPH071536B2 (en) 1986-04-03 1986-06-19 Magnetic recording medium

Country Status (1)

Country Link
JP (1) JPH071536B2 (en)

Also Published As

Publication number Publication date
JPH071536B2 (en) 1995-01-11

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