JPS6380449A - マイクロ波金属イオン源 - Google Patents
マイクロ波金属イオン源Info
- Publication number
- JPS6380449A JPS6380449A JP22526486A JP22526486A JPS6380449A JP S6380449 A JPS6380449 A JP S6380449A JP 22526486 A JP22526486 A JP 22526486A JP 22526486 A JP22526486 A JP 22526486A JP S6380449 A JPS6380449 A JP S6380449A
- Authority
- JP
- Japan
- Prior art keywords
- microwave
- generation chamber
- plasma generation
- generating chamber
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001455 metallic ions Chemical class 0.000 title 1
- 238000005477 sputtering target Methods 0.000 claims abstract description 11
- 229910021645 metal ion Inorganic materials 0.000 claims description 9
- 238000000605 extraction Methods 0.000 claims description 7
- 230000007935 neutral effect Effects 0.000 abstract description 6
- 238000004544 sputter deposition Methods 0.000 abstract description 5
- 239000012212 insulator Substances 0.000 abstract description 3
- 150000002500 ions Chemical class 0.000 description 24
- 239000007789 gas Substances 0.000 description 16
- 238000010884 ion-beam technique Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 239000013077 target material Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000037427 ion transport Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22526486A JPS6380449A (ja) | 1986-09-24 | 1986-09-24 | マイクロ波金属イオン源 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22526486A JPS6380449A (ja) | 1986-09-24 | 1986-09-24 | マイクロ波金属イオン源 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6380449A true JPS6380449A (ja) | 1988-04-11 |
| JPH0544769B2 JPH0544769B2 (enrdf_load_stackoverflow) | 1993-07-07 |
Family
ID=16826590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22526486A Granted JPS6380449A (ja) | 1986-09-24 | 1986-09-24 | マイクロ波金属イオン源 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6380449A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01283745A (ja) * | 1988-05-11 | 1989-11-15 | Hitachi Ltd | プラズマ発生装置及びプラズマ元素分析装置 |
| JPH088238A (ja) * | 1995-05-10 | 1996-01-12 | Hitachi Ltd | 加工方法及び加工装置 |
| CN112176406A (zh) * | 2020-09-16 | 2021-01-05 | 北京清碳科技有限公司 | 一种单晶金刚石生长设备 |
-
1986
- 1986-09-24 JP JP22526486A patent/JPS6380449A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01283745A (ja) * | 1988-05-11 | 1989-11-15 | Hitachi Ltd | プラズマ発生装置及びプラズマ元素分析装置 |
| JPH088238A (ja) * | 1995-05-10 | 1996-01-12 | Hitachi Ltd | 加工方法及び加工装置 |
| CN112176406A (zh) * | 2020-09-16 | 2021-01-05 | 北京清碳科技有限公司 | 一种单晶金刚石生长设备 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0544769B2 (enrdf_load_stackoverflow) | 1993-07-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5767628A (en) | Helicon plasma processing tool utilizing a ferromagnetic induction coil with an internal cooling channel | |
| US5968327A (en) | Ionizing sputter device using a coil shield | |
| US5091049A (en) | High density plasma deposition and etching apparatus | |
| US5178739A (en) | Apparatus for depositing material into high aspect ratio holes | |
| JP4150504B2 (ja) | イオン化物理蒸着のための方法および装置 | |
| JP4722486B2 (ja) | 高蒸着速度スパッタリング | |
| US5686796A (en) | Ion implantation helicon plasma source with magnetic dipoles | |
| JPH0814026B2 (ja) | 高密度プラズマ蒸着およびエッチング装置 | |
| US20070205096A1 (en) | Magnetron based wafer processing | |
| TW201145349A (en) | High density plasma source | |
| JP2002504187A (ja) | 材料をイオン化スパッタリングする方法と装置 | |
| JPS63174321A (ja) | イオン・エッチング及びケミカル・ベーパー・デポジション装置及び方法 | |
| JPH0816266B2 (ja) | 高アスペクト比の穴に材料を付着させる装置 | |
| US7578908B2 (en) | Sputter coating system | |
| US5369337A (en) | DC or HF ion source | |
| US7038389B2 (en) | Magnetron plasma source | |
| JP2973058B2 (ja) | 高真空・高速イオン処理装置 | |
| US6463873B1 (en) | High density plasmas | |
| JPS6380449A (ja) | マイクロ波金属イオン源 | |
| WO2000003055A1 (en) | Shield for ionized physical vapor deposition apparatus | |
| JP2777657B2 (ja) | プラズマ付着装置 | |
| JP2590112B2 (ja) | マイクロ波プラズマ処理装置 | |
| JPH01139762A (ja) | スパッタリング装置 | |
| JPH0221296B2 (enrdf_load_stackoverflow) | ||
| JP4384295B2 (ja) | プラズマ処理装置 |