JPS6379354A - Resin-sealed semiconductor device - Google Patents
Resin-sealed semiconductor deviceInfo
- Publication number
- JPS6379354A JPS6379354A JP22356986A JP22356986A JPS6379354A JP S6379354 A JPS6379354 A JP S6379354A JP 22356986 A JP22356986 A JP 22356986A JP 22356986 A JP22356986 A JP 22356986A JP S6379354 A JPS6379354 A JP S6379354A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- powder
- semiconductor device
- sealed semiconductor
- seal part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 239000011347 resin Substances 0.000 claims abstract description 26
- 229920005989 resin Polymers 0.000 claims abstract description 26
- 239000000843 powder Substances 0.000 claims abstract description 25
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 5
- 239000010432 diamond Substances 0.000 claims abstract description 5
- 238000000465 moulding Methods 0.000 claims abstract description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052582 BN Inorganic materials 0.000 claims abstract description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 abstract description 2
- 239000003822 epoxy resin Substances 0.000 abstract description 2
- 239000005011 phenolic resin Substances 0.000 abstract description 2
- 229920000647 polyepoxide Polymers 0.000 abstract description 2
- 238000007599 discharging Methods 0.000 abstract 2
- 229910010272 inorganic material Inorganic materials 0.000 abstract 2
- 239000011147 inorganic material Substances 0.000 abstract 2
- 230000017525 heat dissipation Effects 0.000 description 16
- 238000007789 sealing Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、樹脂封止型半導体装置に関し、特に、熱放散
性の向上した樹脂封止型半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a resin-sealed semiconductor device, and particularly to a resin-sealed semiconductor device with improved heat dissipation.
半導体素子の果撹度の向上に伴ない発熱量も大きくなり
、いかに放熱をさせるかが重要になってきている。樹脂
封止型半導体装置における熱放散は、当該半導体素子の
搭載などの目的で使用されろリードフンームとモールド
樹脂よりなる樹脂封止部とにより行われる。熱放散の面
からは、リードフレーム材料としては、熱伝導度の良い
銅糸リードフレームが有利とされている。モールド樹脂
の面から、熱伝導度を向上させることも提案されており
、（株）工業調査会発行「電子材料Ｊ１９８２年８月号
ｐ６１〜６２および同１９８４年８月号ｐ７７〜７８に
は、モールド樹脂の熱伝導度を良くするには、光填剤（
フィラー）の検討が重要であることなどが記載されてお
り、７リカー系フイラーにおいて、溶融シリカよりも結
晶クリ力σ）方が、熱伝導性という面では有利であるこ
とも記載されている。As the degree of agitation of semiconductor devices improves, the amount of heat generated also increases, and how to dissipate heat has become important. Heat dissipation in a resin-sealed semiconductor device is performed by a lead humm used for the purpose of mounting the semiconductor element, etc., and a resin sealing portion made of mold resin. From the standpoint of heat dissipation, copper thread lead frames with good thermal conductivity are considered to be advantageous as lead frame materials. It has also been proposed to improve thermal conductivity from the perspective of mold resin, and in ``Electronic Materials J, August 1982 issue, pages 61-62 and August 1984 issue, pages 77-78, published by Kogyo Research Association, To improve the thermal conductivity of the mold resin, use optical filler (
It is stated that it is important to consider fillers), and it is also stated that among 7 liquor-based fillers, crystal clear strength σ) is more advantageous than fused silica in terms of thermal conductivity.
一万、樹脂封止型半導体装置の熱放散性を向上させる１
こめに、当該装置に放熱フィン！取着てることも提案さ
れている。10,000, Improving heat dissipation of resin-sealed semiconductor devices 1
Finally, put a heat dissipation fin on the device! It is also suggested that it be installed.
しかしながら、上記のように、結晶性シリカが熱伝導性
という面では有利とされていても、このシリカは熱膨張
係数が大のため、内部応力が大きくなり、半導体素子に
対する影響も大きくなったりする。However, as mentioned above, even though crystalline silica is said to be advantageous in terms of thermal conductivity, this silica has a large coefficient of thermal expansion, which increases internal stress and has a large effect on semiconductor devices. .
したがって、従来からモールド樹脂中に無機質充填剤を
混入してモールド底型することが行われているが、単に
、熱伝導性を向上させるだけでなく、樹脂の流動性の低
下や耐湿性の低下や電気的信頼性の低下などの問題も考
慮する必要がある。Therefore, conventionally, inorganic fillers have been mixed into the mold resin to form the bottom of the mold, but this not only improves thermal conductivity but also reduces resin fluidity and moisture resistance. It is also necessary to consider issues such as deterioration of electrical reliability and electrical reliability.
この点モールド樹脂中に、熱伝導性を向上させる目的で
、銀（１）粉などの金属粉末を混入せしめることも考え
られるが、この金属粉末は４電性をもち、素子特性に影
響を与え、電気的信頼性を低下することか考えられる。In this regard, it may be possible to mix metal powder such as silver (1) powder into the mold resin for the purpose of improving thermal conductivity, but this metal powder has four charges and may affect the device characteristics. , it is conceivable that electrical reliability may be reduced.
一方、後者の放熱フィンを取着した構造では、装置全体
の構造を複雑化したり、実装密度やコストなどの面で問
題があり、また、放熱特性の向上にも限界がある。On the other hand, the latter structure in which heat dissipation fins are attached complicates the overall structure of the device, has problems in terms of packaging density and cost, and also has limits to the improvement of heat dissipation characteristics.
本発明は、モールド樹脂中に混入せしめることにより樹
脂封止型半導体装置の熱放散性を向上せしめろことかで
き、また電気的信頼性の低下などを招来することのない
技術を提供することを目的とする。The present invention aims to provide a technology that can improve the heat dissipation of a resin-sealed semiconductor device by mixing it into a molding resin, and does not cause a decrease in electrical reliability. purpose.
本発明は、また、放熱フィンを取着しなくても、樹脂封
止部の改良により、シンプルな構造で熱放散性を向上せ
しめることのできる技術を提供することを目的とする。Another object of the present invention is to provide a technique that can improve heat dissipation with a simple structure by improving the resin sealing part without attaching heat dissipation fins.
本発明の前記ならびにそのほかの目的と新規な特徴は、
本明細書の記述および添付図面からあきらかになるであ
ろう。The above and other objects and novel features of the present invention include:
It will become clear from the description of this specification and the accompanying drawings.
本願において開示される発明のうち代表的なものの概要
を匍単に説明てれは、下記のとおりである。A brief summary of representative inventions disclosed in this application is as follows.
すなわち、本発明ではモールド樹脂中に、炭化珪素（Ｓ
ｉＣ）粉末、ダイヤモンド粉、および（または）キエー
ビックボロンナイトライド（ＣＢＮ）粉末を混入して成
ることを特徴とする。That is, in the present invention, silicon carbide (S
iC) powder, diamond powder, and/or Kievik boron nitride (CBN) powder.
上記粉末は熱伝導性が良く、また、絶縁性などの点でも
問題がなく、樹脂封止型半導体装置の特に熱放散性を向
上せしめるのに好適である。The above-mentioned powder has good thermal conductivity, and also has no problems in terms of insulation, and is suitable for improving the heat dissipation properties of resin-sealed semiconductor devices in particular.
次に、本発明を、実施例を示す図面を参照しつつ、更に
詳述する。Next, the present invention will be explained in further detail with reference to the drawings showing examples.
第１図は本発明の実施例を承丁樹脂封止型半導体装置の
断面図、ｇ２図は本発明の他の実施例を示す樹脂封止型
半導体装置の断面図で、放熱フィンを取着して成る。Fig. 1 is a cross-sectional view of a resin-sealed semiconductor device according to an embodiment of the present invention, and Fig. g2 is a cross-sectional view of a resin-sealed semiconductor device showing another embodiment of the present invention, in which a radiation fin is attached. It consists of
これら図にて、１はリードフレームで、当該リードフレ
ームは、ここではその詳細を図示していないが、薄い金
属板をプレス加工などによりバターニングして形成され
、半導体素子を取り付ける例えば矩形に構成されたタブ
と、このタブを支持する細いタブリードと、当該タブの
周囲で非接触で先端を臨ます複数のリードとを有して成
る。このリードフレーム１は、例えばＣｕ系合金により
構成される。In these figures, 1 is a lead frame, and although the details are not shown here, the lead frame is formed by patterning a thin metal plate by press working or the like, and has a rectangular shape, for example, on which a semiconductor element is attached. The device includes a tab with a cylindrical shape, a thin tab lead that supports the tab, and a plurality of leads whose tips extend around the tab in a non-contact manner. This lead frame 1 is made of, for example, a Cu-based alloy.
これら図に示すように、当該リードフレーム１のタブ２
上に半導体素子３を、導電性樹脂接着剤などを用いて取
付する。As shown in these figures, the tab 2 of the lead frame 1
The semiconductor element 3 is attached thereon using a conductive resin adhesive or the like.
半導体素子（チップ）３は、例えはシリコン単結晶基板
から成り、周知の技術によってこのチップ内には多数の
回路素子が形成され、１つの回路機能が与えもれ【いる
。回路素子の具体例は１例えばＭＯＳトランジスタから
成り、これらの回路素子によって１例えば論理回路およ
びメモリの回路機能が形成されている。The semiconductor element (chip) 3 is made of, for example, a silicon single crystal substrate, and a large number of circuit elements are formed in this chip using well-known techniques, so that one circuit function is not provided. A specific example of a circuit element is one such as a MOS transistor, and these circuit elements form one circuit function, such as a logic circuit and a memory.
当該素子３内の内部配腺と外部接続端子との間で導通を
とり、当該素子３を機能させるために、当該素子３のポ
ンディングパッド部（図示せず）とリードフレーム１の
リード（内部リード）４とを、これら図に示すように、
コネクタ用ワイヤ５により接続する。In order to establish continuity between the internal wiring in the element 3 and the external connection terminals and to make the element 3 function, the bonding pad section (not shown) of the element 3 and the lead (internal) of the lead frame 1 are connected. lead) 4 as shown in these figures,
Connection is made using the connector wire 5.
コネクタ用ワイヤ５には、例えばＡｕ線やＡ４線が使用
され、当該ワイヤボンディングは、例えば超音波ボンデ
ィング法により行われる。For example, Au wire or A4 wire is used for the connector wire 5, and the wire bonding is performed by, for example, an ultrasonic bonding method.
半導体素子３やコネクタ用ワイヤ５の当該ボンディング
部を外的環境から保護するために、樹脂をモールドし、
これら図に示すように、樹脂封止部６を形成する。In order to protect the bonding parts of the semiconductor element 3 and the connector wire 5 from the external environment, resin is molded.
As shown in these figures, a resin sealing portion 6 is formed.
当該樹脂封止部６の形成に用いられる樹脂としては１例
えばフェノール樹脂を硬化剤に用いたエポキシ樹脂があ
げられる。Examples of the resin used to form the resin sealing portion 6 include epoxy resin using a phenol resin as a curing agent.
本発明は白線モールド金型内に、ＳｉＣ粉、ダイヤモン
ド粉、またはＣＢＮ粉を混入せしめる。In the present invention, SiC powder, diamond powder, or CBN powder is mixed into the white line mold.
これら無機質粉末は、１種または２ａ１以上使用される
。These inorganic powders may be used alone or in amounts of 2a1 or more.
当該粉末のモールド樹脂中の含有量は、樹脂の流動性な
どを考慮して決定される。The content of the powder in the mold resin is determined in consideration of the fluidity of the resin and the like.
モールド成型の方法としては、ボッティングなどの方法
もあるが、トランスファーモールドによる方法が好まし
い。As a molding method, there are methods such as botting, but a method using transfer molding is preferable.
前記したワイヤボンディング後の素子組立品をモールド
金型内に装着し、上記Ｓ ｉ Ｃ＊ダイヤモンド、ＣＢ
Ｎ粉よりなる熱伝導性無機質粉末を混入したモールド樹
脂により、モールド底型を行ない、適宜リードフレーム
の切断１分離、メッキ処理などを行ない、第１図に示−
′ｆ″樹脂封止型半導体装置装得る。The element assembly after the wire bonding described above is mounted in a mold, and the above S i C* diamond, CB
The bottom of the mold was molded using a molding resin mixed with a thermally conductive inorganic powder made of N powder, and the lead frame was appropriately cut and plated, as shown in Figure 1.
'f' resin-sealed semiconductor device package is obtained.
本発明ではこのように熱伝導性の特定の無機質粉末をモ
ールド樹脂中に混入せしめて、樹脂封止部６を形成する
ようにしたので、当該粉末を介して熱が放散され、放電
特性に優れた樹脂制止型半導体装置か得られ１こ。In the present invention, the specific thermally conductive inorganic powder is mixed into the mold resin to form the resin sealing part 6, so heat is dissipated through the powder, resulting in excellent discharge characteristics. One resin-sealed semiconductor device was obtained.
第２図に示すように、当該！！ｉＡｈ封止部６の上面に
、放熱フィン７を取着することにより、前記粉末による
熱放散性の向上に加えて、増々熱放散性を向上せしめる
ことができた。As shown in Figure 2, the relevant! ! By attaching the heat dissipation fins 7 to the upper surface of the iAh sealing part 6, it was possible to further improve the heat dissipation properties in addition to the heat dissipation properties due to the powder.
以上本発明者によってなされた発明を実施例にもとづき
具体的に説明したが１本発明は上記実施例に限定される
ものではなく、その要旨を逸脱しない範囲で極々変史可
能であることはい・うまでもない。Although the invention made by the present inventor has been specifically explained above based on examples, it is true that the present invention is not limited to the above-mentioned examples, and can be modified to a large extent without departing from the gist of the invention. It's no good.
本発明は上記実施例で示した樹脂封止型半導体装置以外
の他の各種樹脂制止型半導体装置にも適用できる。The present invention can be applied to various resin-sealed semiconductor devices other than the resin-sealed semiconductor devices shown in the above embodiments.
本願において開示される発明の、うち代表的なものによ
−て得られる効果を簡単に説明てれは、下記のとうりで
ある。The following is a brief explanation of the effects obtained by the representative inventions disclosed in this application.
本発明によれば、放熱性の高い樹脂封止型半導体装置が
得られ、放熱フィンを取着することな（シンプルな構造
の下で半導体素子からの熱を樹脂封止部から容易に逃が
すことかでき、金属粉をフィラーとして使用する場合の
ごとく導電性に影響を与えることなく高熱伝導性の樹脂
封止型半導体装置が得られた。According to the present invention, a resin-sealed semiconductor device with high heat dissipation properties can be obtained, and heat from the semiconductor element can be easily dissipated from the resin-sealed part with a simple structure without attaching a heat dissipation fin. As a result, a resin-sealed semiconductor device with high thermal conductivity was obtained without affecting conductivity, unlike when metal powder is used as a filler.
第１図は本発明の実施例を示す構成断面図、第２図は本
発明の他の実施例な示す構成断面図である。
１・・・リードフレーム、２・・・タブ、３・・・半導
体素子、４・・・リード、５・・・コネクタ用ワイヤ、
６・・・樹脂封止部、７・・・放熱フィン。
第 １ 図
第 ２ 図FIG. 1 is a cross-sectional view showing an embodiment of the present invention, and FIG. 2 is a cross-sectional view showing another embodiment of the present invention. DESCRIPTION OF SYMBOLS 1...Lead frame, 2...Tab, 3...Semiconductor element, 4...Lead, 5...Connector wire,
6...Resin sealing part, 7...Radiating fin. Figure 1 Figure 2
Claims (1)
、モールド樹脂中に炭化珪素、ダイヤモンドおよびキュ
ービックボロンナイトライドから成る群から選択された
１種または２種以上の熱伝導性無機質粉末を混入せしめ
、モールド成型を行なうことにより構成されて成ること
を特徴とする樹脂封止型半導体装置。 ２、樹脂封止型半導体装置が、当該樹脂封止部表面に放
熱フィンを取着して成る、特許請求の範囲第１項記載の
樹脂封止型半導体装置。[Claims] 1. In a resin-sealed semiconductor device, the resin-sealed portion contains one or more selected from the group consisting of silicon carbide, diamond, and cubic boron nitride in the mold resin. A resin-sealed semiconductor device characterized in that it is constructed by mixing a thermally conductive inorganic powder and performing molding. 2. The resin-sealed semiconductor device according to claim 1, wherein the resin-sealed semiconductor device has a radiation fin attached to the surface of the resin-sealed portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22356986A JPS6379354A (en) | 1986-09-24 | 1986-09-24 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22356986A JPS6379354A (en) | 1986-09-24 | 1986-09-24 | Resin-sealed semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6379354A true JPS6379354A (en) | 1988-04-09 |
Family
ID=16800218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22356986A Pending JPS6379354A (en) | 1986-09-24 | 1986-09-24 | Resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6379354A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7405487B2 (en) * | 2000-08-16 | 2008-07-29 | Micron Technology, Inc. | Method and apparatus for removing encapsulating material from a packaged microelectronic device |
-
1986
- 1986-09-24 JP JP22356986A patent/JPS6379354A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7405487B2 (en) * | 2000-08-16 | 2008-07-29 | Micron Technology, Inc. | Method and apparatus for removing encapsulating material from a packaged microelectronic device |
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