JPS6376328A - Magnetron-type plasma treatment device - Google Patents

Magnetron-type plasma treatment device

Info

Publication number
JPS6376328A
JPS6376328A JP61220738A JP22073886A JPS6376328A JP S6376328 A JPS6376328 A JP S6376328A JP 61220738 A JP61220738 A JP 61220738A JP 22073886 A JP22073886 A JP 22073886A JP S6376328 A JPS6376328 A JP S6376328A
Authority
JP
Japan
Prior art keywords
plasma
magnetron
electrode
magnetic field
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61220738A
Other languages
Japanese (ja)
Other versions
JP2537210B2 (en
Inventor
Katsuya Okumura
勝弥 奥村
Shiyuu Tezaki
手崎　衆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61220738A priority Critical patent/JP2537210B2/en
Publication of JPS6376328A publication Critical patent/JPS6376328A/en
Priority to US07/330,933 priority patent/US4891560A/en
Application granted granted Critical
Publication of JP2537210B2 publication Critical patent/JP2537210B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus

Abstract

PURPOSE:To form a magnetron-type plasma treatment device which can extend an erosion region by a method wherein a means with which the magnetic-field intensity parallel to an electrode surface is distributed perpendicularly to the electrode surface and another means with which the distribution inside a plasma space can have tile maximum value are installed. CONSTITUTION:By appropriately adjusting the magnetic-field intensity of an electromagnet 11 and a permanent magnet 12, the magnetic-field intensity can be distributed in such a way that the parallel-magnetic-field intensity reaches the maximum in a region which is located in a sufficiently higher region than the width of an ion sheath part, while this intensity is weaker than the vertical intensity near the ion sheath part. As a result, a cyclotron motion is caused in a region which is located far away from the ion sheath part, and the ion density in a plasma reaches the maximum. After an ion has been diffused in the plasma, it reaches an ion sheath surface 16 and is then irradiates a target 13. Through this constitution, it is possible to obtain an erosion region 17 which is extended as compared with the region to be obtained by conventional devices.

Description

【発明の詳細な説明】 ［発明の目的１ （産業上の利用分野） 本発明はマグネトロン型プラズマ処理装置に関し、特に
半導体基板のスパッタリングやエツチングに用いられる
ものである。DETAILED DESCRIPTION OF THE INVENTION [Objective of the Invention 1 (Field of Industrial Application) The present invention relates to a magnetron type plasma processing apparatus, and is particularly used for sputtering and etching of semiconductor substrates.

（従来の技術） 従来、マグネトロン型スパッタリング装置としては、例
えば第１１図、第１２図に示すものが知られている。(Prior Art) Conventionally, as a magnetron type sputtering apparatus, those shown in FIGS. 11 and 12, for example, are known.

図中の１は、同心円状の電磁石である。この電磁石１の
上には、円板状のターゲット２が載置され、ターゲット
２表面にも磁力線３がもれるようになっている。この際
ターゲット２表面に水平な平行磁界は、中心軸に対して
放射状になっている。1 in the figure is a concentric electromagnet. A disc-shaped target 2 is placed on top of the electromagnet 1, so that lines of magnetic force 3 also leak onto the surface of the target 2. At this time, the parallel magnetic field horizontal to the surface of the target 2 is radial with respect to the central axis.

前記ターゲット２には該ターゲット２が陰極になるよう
にプラズマ電３１４が接続され、これによりターゲツト
２上部にプラズマを発生させる。A plasma electrode 314 is connected to the target 2 so that the target 2 serves as a cathode, thereby generating plasma above the target 2.

こうした構造の装置において、ターゲット２表面近傍の
電界と前記平行磁界によってプラズマ中の電子がサイク
ロトン運動をし、プラズマ密度を増大させる。以下、こ
の状況について第１３図〜第１４図を参照して説明する
。In an apparatus having such a structure, electrons in the plasma undergo cycloton motion due to the electric field near the surface of the target 2 and the parallel magnetic field, thereby increasing the plasma density. This situation will be explained below with reference to FIGS. 13 to 14.

第１３図に示す如く、プラズマとターゲット間にはイオ
ンシース部が形成され、該イオンシース部にはプラズマ
が存在しない。そして、プラズマ密度のターゲツト面か
らの分布は平行磁界がない場合、同図に示す如くイオン
シース部より上方はほぼ均一になっている。しかし、平
行磁界が存在する場合は該平行磁界と電界によって電子
がサイクロトン運動を起こし、第１４図に示すようにプ
ラズマ密度が増大する。具体的には、磁界が磁界強度（
通常１００ガウス前後）以下であるとほとんどプラズマ
は増大しないが、臨界強度以上では強度とともにプラズ
マ密度も増大する。ここで、平行磁界がターゲツト面よ
り単調減少するため、プラズマ密度はイオンシースと接
する界面近傍で最大値をとる。一方、ターゲツト面内の
平行磁界強度は、第１５図に示す如く両磁極間のほぼ中
央部（Ａ部）で最大となる。即ち、プラズマ密度の最大
領域は、Ａ部のイオンシース部と接している部近傍とい
う非常に局在化された領域となっている。As shown in FIG. 13, an ion sheath is formed between the plasma and the target, and no plasma exists in the ion sheath. The distribution of plasma density from the target surface is almost uniform above the ion sheath as shown in the figure in the absence of a parallel magnetic field. However, when a parallel magnetic field exists, electrons undergo cycloton motion due to the parallel magnetic field and electric field, and the plasma density increases as shown in FIG. 14. Specifically, the magnetic field is determined by the magnetic field strength (
If the intensity is below the critical intensity (usually around 100 Gauss), the plasma will hardly increase, but if the intensity is above the critical intensity, the plasma density will increase with the intensity. Here, since the parallel magnetic field decreases monotonically from the target surface, the plasma density takes its maximum value near the interface where it contacts the ion sheath. On the other hand, the parallel magnetic field strength within the target plane is maximum at approximately the center (section A) between the two magnetic poles, as shown in FIG. That is, the region of maximum plasma density is a very localized region near the part A that is in contact with the ion sheath part.

ところで、前記スパッタ装置においては、イオンシース
部に通常５００〜８００Ｖの電圧が印加され、電界によ
ってイオンがプラズマから引出されて加速し、これがタ
ーゲットに照射されてスパッタリングが起こる。By the way, in the sputtering apparatus, a voltage of usually 500 to 800 V is applied to the ion sheath section, and ions are extracted from the plasma and accelerated by the electric field, and the target is irradiated with the ions to cause sputtering.

しかしながら、上記スパッタ装置によれば、第１６図に
示す如くプラズマ密度の最大領域５はイオンシース部近
傍で局在化しているため、該局在化領域からイオンシー
ス部の電圧によって引き出される。このため、スパッタ
リング（エロージョン）はターゲットの局在化した領１
ｇ６のみで起こる。従って、ターゲットの有効率が低下
したりターゲットに対向しておかれた基板上に摸体積し
た場合、膜厚の均一性が損われたり、ステップカバレー
ジの不均一性が現われる。However, according to the above sputtering apparatus, as shown in FIG. 16, the maximum plasma density region 5 is localized in the vicinity of the ion sheath, and therefore the plasma is extracted from the localized region by the voltage of the ion sheath. For this reason, sputtering (erosion) occurs in localized regions of the target.
Occurs only in g6. Therefore, if the effectiveness of the target decreases or if the target is simulated on a substrate facing the target, the uniformity of the film thickness will be impaired or non-uniformity of step coverage will appear.

（発明が解決しようとする問題点） 本発明が上記事情に鑑みてなされたもので、従来と比ベ
ニローション領域を広げることができるマグネトロン型
プラズマ処理装置を提供することを目的とする。(Problems to be Solved by the Invention) The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a magnetron-type plasma processing apparatus that can expand the range of benilotion compared to the conventional one.

［発明の構成コ （問題点を解決するための手段） 本発明は、平面状の電極上部にプラズマを発生させる手
段と、前記電極面に平行な磁界強度に前記電極面に垂直
な分布を持たせ、前記プラズマ空間内で該分布の最大値
を持たせる手段とを具備することを特徴とする。本発明
によれば、従来と比ベニローション領域を広げることが
できる。[Structure of the Invention (Means for Solving Problems)] The present invention provides means for generating plasma on the upper part of a planar electrode, and a magnetic field having a distribution perpendicular to the electrode surface in a magnetic field parallel to the electrode surface. and means for causing the distribution to have a maximum value within the plasma space. According to the present invention, the range of beni lotion can be expanded compared to conventional products.

（作用） 本発明は、イオンシース部幅より十分高い領域で平行磁
界強度が最大となり、イオンシース部近傍では臨界強度
より弱くなるような磁界強度の分布をもたせる。その結
果、イオンシース部より十分離れた領域でサイクロトン
運動が起こるため、プラズマ中でイオン密度が最大にな
り、該イオンがプラズマ中を拡散してからイオンシース
面に到達し、それからターゲットに照射される。このた
め、エロージョン領域が拡大する。(Function) The present invention provides a distribution of magnetic field strength such that the parallel magnetic field strength is maximum in a region sufficiently higher than the width of the ion sheath portion, and becomes weaker than the critical strength near the ion sheath portion. As a result, cycloton movement occurs in a region sufficiently far away from the ion sheath, so the ion density in the plasma is maximized, and the ions diffuse through the plasma before reaching the ion sheath surface and then irradiating the target. be done. Therefore, the erosion area expands.

（実施例） 以下、本発明の実施例について図を参照して説明する。(Example) Embodiments of the present invention will be described below with reference to the drawings.

実施例１ 第１図は、本発明の実施例１に係るマグネトロン型スパ
ッタリング装置である。Embodiment 1 FIG. 1 shows a magnetron type sputtering apparatus according to Embodiment 1 of the present invention.

図中の１１は、最外周直径２００ｍｍの同心円状のＮ１
１石である。この電磁石１１の凹部１１ａには、該電磁
石１１と極性を異にするドーナツ状の永久磁石１２が埋
設されている。前記電磁石１１の上には円板状のターゲ
ット１３が配設され、該ターゲット１３にプラズマ電源
１４が接続されている。こうした装置において、前記電
磁石１１゜永久磁石１２による夫々の磁界強度を調整し
、イオンシース部での平行磁界強度が臨界強度以下にな
るようにし、かつ電磁石１１．永久磁石１２の平行磁界
強度がイオンシース部より十分離れた領域で臨界強度よ
り強くなるようにした。具体的には、ターゲット１３表
面より３ｍｍの領域では平行磁界を略相殺し、１００ガ
ウス以下とし、１５ｍｍの領域で３００ガウス以下とし
た。その結果、１５ｍｍの領域で３００ガウスの平行磁
界が得られた（第２図図示）。このような平行磁界分布
が得られるようにして、２×１０°３　Ｔｏｒｒでアル
ゴンプラズマを発生させた。この際、イオンシース幅は
、約３ｍｍであった。また、このような条件下でエロー
ジョン領域の幅を測定すると、第３図に示すようになり
、永久磁石を埋設しない従来装置の場合は極間では極間
の約３０％しかエロージョンされていなかったものが、
本実施例では略全面にわたってエロージョンされた。こ
れは、プラズマ密度の集中ｆｌｉ［１５がイオンシース
面１６より離れているため、Ａｒイオンがプラズマ中を
拡散し拡がってからイオンシース面１６に到達し、ター
ゲットに照射されるからである。なお、図中の１７はエ
ロージョン領域である。11 in the figure is a concentric circle N1 with an outermost diameter of 200 mm.
It is one stone. A donut-shaped permanent magnet 12 having a polarity different from that of the electromagnet 11 is buried in the recess 11a of the electromagnet 11. A disk-shaped target 13 is disposed above the electromagnet 11, and a plasma power source 14 is connected to the target 13. In such a device, the magnetic field strength of the electromagnet 11.degree. The parallel magnetic field strength of the permanent magnet 12 is made stronger than the critical strength in a region sufficiently distant from the ion sheath portion. Specifically, in a region 3 mm from the surface of the target 13, the parallel magnetic field was approximately canceled out to be 100 Gauss or less, and in a 15 mm region, it was 300 Gauss or less. As a result, a parallel magnetic field of 300 Gauss was obtained in a 15 mm area (as shown in Figure 2). Argon plasma was generated at 2×10°3 Torr so as to obtain such a parallel magnetic field distribution. At this time, the ion sheath width was about 3 mm. In addition, when measuring the width of the erosion area under these conditions, it is shown in Figure 3, and in the case of conventional equipment that does not embed permanent magnets, only about 30% of the erosion between the poles was eroded. The thing is
In this example, erosion occurred over almost the entire surface. This is because the plasma density concentration fli[15 is located away from the ion sheath surface 16, so that the Ar ions diffuse and expand in the plasma before reaching the ion sheath surface 16 and irradiating the target. Note that 17 in the figure is an erosion area.

４４−上記実施例１によれば、同心円状の電磁石１１の
凹部１１ａに該電磁石１と極性の異なるドーナツ状の永
久磁石１２を配設させた構造となっているため、電磁石
１１．永久磁石１２の夫々の磁界強度を適宜調整するこ
とにより、イオンシース部幅より十分高い領域では平行
磁界強度が最大になり、イオンシース部近傍では臨界強
度より弱くなるような磁界強度の分布をもたせることが
できる。その結果、イオンシース部より十分離れた領域
でサイクロトン運動が起こるため、プラズマ中でイオン
密度が最大となり、該イオンがプラズマ中を拡散してか
らイオンシース面１６に到達し、それからターゲット１
３に照射される。このため、従来と比べ拡大したエロー
ジョン領域１７が得られる。44-According to the first embodiment, the donut-shaped permanent magnet 12 having a polarity different from that of the electromagnet 1 is disposed in the recess 11a of the concentric electromagnet 11, so that the electromagnet 11. By appropriately adjusting the magnetic field strength of each of the permanent magnets 12, a distribution of magnetic field strength is created such that the parallel magnetic field strength is maximum in a region sufficiently higher than the width of the ion sheath part, and becomes weaker than the critical strength in the vicinity of the ion sheath part. be able to. As a result, cycloton movement occurs in a region sufficiently distant from the ion sheath, so that the ion density in the plasma becomes maximum, and the ions diffuse through the plasma before reaching the ion sheath surface 16 and then reaching the target 1.
3 is irradiated. Therefore, an enlarged erosion area 17 can be obtained compared to the conventional one.

なお、上記永久磁石の代わりに電磁石を用いることもで
きる。また、電磁石の極性を時間的に変化させて均一性
の向上を図ることができる。Note that an electromagnet can also be used instead of the above permanent magnet. Furthermore, uniformity can be improved by temporally changing the polarity of the electromagnet.

実施例２ 第４図は、実施例２に係るマグネトロン型エツチング装
置である。同装置は、第４図に示す如く、電磁石１１．
永久磁石１２の上に基板保持板２１を設け、かつ該保持
板２１の上に直径１５０ｍｍの被エツチング基板２２を
設けた構造となっている。こうした構造の装置において
、四塩化炭素（ＣＣＪ２４　）ガスと塩素（Ｏｆｆ２）
ガスを導入して該ガスのプラズマを形成し、反応性イオ
ンエツチング法によりＡｎ合金膜のバターニングを行な
ったところ。均一性±５％、エッチング速度１譚／分の
良好なエツチングが達成された。Embodiment 2 FIG. 4 shows a magnetron type etching apparatus according to Embodiment 2. As shown in FIG. 4, the device includes an electromagnet 11.
The structure is such that a substrate holding plate 21 is provided on the permanent magnet 12, and a substrate to be etched 22 having a diameter of 150 mm is placed on the holding plate 21. In equipment with this structure, carbon tetrachloride (CCJ24) gas and chlorine (Off2)
A gas was introduced to form a plasma of the gas, and the An alloy film was buttered by reactive ion etching. Good etching with a uniformity of ±5% and an etching rate of 1 etch/min was achieved.

実施例３ 第５図は、実施例３に係るマグネトロン型エツチング装
置である。同装置において、同心円状の電磁石１１とド
ーナツ状の永久磁石１２の配置は、実施例１のそれと同
じにした。図中の３１は、前記電磁石１１及び永久磁石
１２上に設けられた円板状の電極である。この電極３１
は接地されている。この電極３１の上方には、下部に被
エツチング基板２２を支持した対向電極３２が設けられ
ている。この対向電極３２には、プラズマ発生のための
電′ａ１４が該対向電極３２が陰極になるように接続さ
れている。こうした装置において、対向電極３２に被エ
ツチング基板２２をセットし、塩素（Ｃｊ２２）ガスを
導入してプラズマを発生させ、基板２を深さ５譚までエ
ツチングした。この際、エツチング深さが深いため、エ
ツチング速度を太き（とる必要がある。このため、対向
電極３２に冷却機構（図示せず）を並設し電源パワーを
大きくした。その結果、２ｔｍ／分の高いエツチング速
度が得られとともに、±５％の均一性が得られた。Embodiment 3 FIG. 5 shows a magnetron type etching apparatus according to Embodiment 3. In the same device, the arrangement of the concentric electromagnet 11 and the donut-shaped permanent magnet 12 was the same as that in Example 1. Reference numeral 31 in the figure represents a disc-shaped electrode provided on the electromagnet 11 and the permanent magnet 12. This electrode 31
is grounded. Above this electrode 31, a counter electrode 32 is provided which supports the substrate 22 to be etched at its lower part. An electrode 'a14 for plasma generation is connected to this counter electrode 32 so that the counter electrode 32 becomes a cathode. In such an apparatus, the substrate 22 to be etched was set on the counter electrode 32, chlorine (Cj22) gas was introduced to generate plasma, and the substrate 2 was etched to a depth of 5 mm. At this time, since the etching depth is deep, it is necessary to increase the etching speed. Therefore, a cooling mechanism (not shown) was installed in parallel to the counter electrode 32 and the power supply power was increased. As a result, the etching speed was increased to 2 tm/ A high etching rate of 50% and a uniformity of ±5% were obtained.

また、実施例３によれば、被エツチング基板２２が載置
される対向電極３２の下に磁石等を設置する必要がない
ため、基板の冷却が容易にかつ効率よく行なうことが１
きた。Further, according to the third embodiment, since there is no need to install a magnet or the like under the counter electrode 32 on which the substrate to be etched 22 is placed, the substrate can be cooled easily and efficiently.
came.

実施例４ 第６図は、実施例４に係るマグネトロン型スパッタリン
グ装置である。この装置において、電磁石１１と永久磁
石１２は実施例１と同じ配置にした。また、前記電磁石
１１及び永久磁石１２上にはターゲット１３を設けられ
、このターゲット１４の上方には被膜処理がなされる基
板４１を支持する対向電極３２が設けられている。前記
ターゲット１３及び対向電極３２には、夫々第１電源１
４ａ、１４ｂが接続されている。こうした構造の装置に
おいて、第１電源１４ａと第２電源１４ｂのパワーを３
０：１〜５０：１にしてＡｒプラズマを形成した。この
ようにしてバイアススパッタを行なったところ、１ｐｔ
の微細なスペースにも空孔もなく膜堆積が行なえた。Example 4 FIG. 6 shows a magnetron type sputtering apparatus according to Example 4. In this device, the electromagnet 11 and the permanent magnet 12 were arranged in the same manner as in Example 1. Further, a target 13 is provided on the electromagnet 11 and the permanent magnet 12, and a counter electrode 32 is provided above the target 14 to support a substrate 41 to be coated. A first power source 1 is connected to the target 13 and the counter electrode 32, respectively.
4a and 14b are connected. In a device with such a structure, the power of the first power source 14a and the second power source 14b is
Ar plasma was formed at a ratio of 0:1 to 50:1. When bias sputtering was performed in this way, 1pt
The film could be deposited without any microscopic spaces or voids.

また、本発明に係る他の実施例としては、第７図〜第１
０図に示すものが知られている。第７図は、同心円状磁
石の内部に埋設する磁石に平板リング状の永久磁石５１
を使用したものである。但し、この永久磁石５１では、
外周面と内周面で極性が異なるように作製されている。Further, as other embodiments according to the present invention, FIGS.
The one shown in Figure 0 is known. FIG. 7 shows a flat ring-shaped permanent magnet 51 embedded inside a concentric magnet.
This is what was used. However, in this permanent magnet 51,
It is manufactured so that the outer circumferential surface and the inner circumferential surface have different polarities.

第８図は、プラズマ集中リング５２ａ、５２ｂが二重に
なるようにしたもので、大面積の電極に適している。こ
こで、プラズマ集中リングを永久磁石の機械的な移動や
電磁石の電流変化によって移動、変形させることにより
、一層良好な均一性を得ることができる。FIG. 8 shows a configuration in which the plasma concentration rings 52a and 52b are doubled, which is suitable for large-area electrodes. Here, better uniformity can be obtained by moving and deforming the plasma concentration ring by mechanically moving a permanent magnet or changing the current of an electromagnet.

第９図は、第７図と逆に外周磁石に平板リング状の永久
磁石５３を使用したものである。In FIG. 9, in contrast to FIG. 7, a flat ring-shaped permanent magnet 53 is used as the outer peripheral magnet.

第１０図は、２個の平板リング状の永久磁石５４ａ、５
４ｂを用いて本提案の磁界分布を得たものである。FIG. 10 shows two flat ring-shaped permanent magnets 54a, 5.
4b was used to obtain the magnetic field distribution of this proposal.

なお、上記実施例では、電磁石を用いた場合について述
べたが、これに限らず、この代わりに永久磁石を用いる
こともできる。In addition, although the above-mentioned Example described the case where an electromagnet was used, it is not limited to this and a permanent magnet can also be used instead.

また、上記実施例では、スパッタリング又はプラズマエ
ツチングに応用した場合について述べたが、これに限ら
ず、この他プラズマＣＶＤ、プラズマ酸化・窒化、アッ
シングなどにも適用できる。Further, in the above embodiments, the case where the present invention is applied to sputtering or plasma etching has been described, but the present invention is not limited to this, and can be applied to other plasma CVD, plasma oxidation/nitridation, ashing, etc.

［発明の効果］ 以上詳述した如く本発明によれば、従来と比ベニローシ
ョン領域を広げることができるマグネトロン型プラズマ
処理装置を提供できる。[Effects of the Invention] As described in detail above, according to the present invention, it is possible to provide a magnetron-type plasma processing apparatus that can expand the range of benilotion compared to the conventional apparatus.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の実施例１に係るマグネトロン型スパッ
タリング装置の説明図、第２図は同装置によるターゲッ
トからの距離とプラズマ密度、平行磁界強度との関係を
示す特性図、第３図は同装置によるエロージョン領域の
説明図、第４図は本発明の実施例２に係るマグネトロン
型エツチング装置の説明図、第５図は本発明の実施例３
に係るマグネトロン型エツチング装置の説明図、第６図
は本発明の実施例４に係るマグネトロン型スパッタ装置
の説明図、第７図〜第１０図は夫々本発明のその他の実
施例に係るマグネトロン型プラズマ処理装置の要部の説
明図、第１１図は従来のマグネトロン型スパッタリング
ＨＭの説明図、第１２図は同装置における磁力線の説明
図、第１３図は同装置によるターゲットからの距離とプ
ラズマ密度との関係を示す説明図、第１４図は同装置に
よるターゲットからの距離とプラズマ密度、平行磁界強
度との関係を示す特性図、第１５図は同装置によるター
ゲツト面内の平行磁界強度の説明図、第１６図は同装置
によるエロージョン領域の説明図である。 １１　・・・電磁石、１２．５１．５４ａ、５４ｂ−・
・永久磁石、１３・・・ターゲット、１４ａ、１４ｂ・
・・プラズマ電源、１５・・・集中領域、１６・・・イ
オンシース而、１７・・・エロージョン領域、２１・・
・基板保持板、２２・・・被エツチング基板、３１・・
・電極、３２・・・対向電極、５２ａ、５２ｔ）・・・
プラズマ集中リング。 出願人代理人　弁理士　鈴江武彦 第１図 プラズマ密度 平行磁界強度 第２図 第３図 第４図 第５図 第６図 第７図 第８図 第９図 「了５４ａ　　　　匣？５５４ａ 二＝二ニニニコ 第１０図 １！１１図 第１２図 第１３図　　　　第１４図 第１６図FIG. 1 is an explanatory diagram of a magnetron type sputtering apparatus according to Example 1 of the present invention, FIG. 2 is a characteristic diagram showing the relationship between distance from the target, plasma density, and parallel magnetic field strength using the same apparatus, and FIG. FIG. 4 is an explanatory diagram of the erosion area according to the same apparatus, FIG. 4 is an explanatory diagram of the magnetron type etching apparatus according to the second embodiment of the present invention, and FIG.
FIG. 6 is an explanatory diagram of a magnetron type sputtering apparatus according to Embodiment 4 of the present invention, and FIGS. 7 to 10 are explanatory diagrams of magnetron type sputtering apparatus according to other embodiments of the present invention. An explanatory diagram of the main parts of the plasma processing equipment, Fig. 11 is an explanatory diagram of the conventional magnetron type sputtering HM, Fig. 12 is an explanatory diagram of the magnetic lines of force in the same equipment, and Fig. 13 is the distance from the target and plasma density using the same equipment. Fig. 14 is a characteristic diagram showing the relationship between the distance from the target, plasma density, and parallel magnetic field strength using the same device, and Fig. 15 is an explanation of the parallel magnetic field strength in the target plane using the same device. 16 are explanatory diagrams of the erosion area by the same device. 11...Electromagnet, 12.51.54a, 54b-...
・Permanent magnet, 13...Target, 14a, 14b・
...Plasma power supply, 15...Concentrated area, 16...Ion sheath, 17...Erosion area, 21...
・Substrate holding plate, 22...Substrate to be etched, 31...
- Electrode, 32... Counter electrode, 52a, 52t)...
Plasma concentration ring. Applicant's representative Patent attorney Takehiko Suzue Figure 1 Plasma density Parallel magnetic field strength Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 1! Figure 11 Figure 12 Figure 13 Figure 14 Figure 16

Claims (6)

【特許請求の範囲】[Claims] （１）平面状の電極上部にプラズマを発生させる手段と
、前記電極面に平行な磁界強度に前記電極面に垂直な方
向の分布を持たせ、前記プラズマ空間内で該分布の最大
値を持たせる手段とを具備することを特徴とするマグネ
トロン型プラズマ処理装置。(1) A means for generating plasma above a planar electrode, a magnetic field intensity parallel to the electrode surface having a distribution in a direction perpendicular to the electrode surface, and having a maximum value of the distribution within the plasma space; 1. A magnetron-type plasma processing apparatus, characterized in that it is equipped with means for causing （２）前記プラズマがドーナツ状であり、かつ電極面に
平行な磁界がプラズマの中心軸に対し放射状になってい
ることを特徴とする特許請求の範囲第１項記載のマグネ
トロン型プラズマ処理装置。(2) The magnetron-type plasma processing apparatus according to claim 1, wherein the plasma is donut-shaped and the magnetic field parallel to the electrode surface is radial with respect to the central axis of the plasma. （３）前記磁界を発生させるための磁石を前記電極下部
に設けたことを特徴とする特許請求の範囲第２項記載の
マグネトロン型プラズマ処理装置。(3) The magnetron type plasma processing apparatus according to claim 2, wherein a magnet for generating the magnetic field is provided below the electrode. （４）前記電極に該電極が陰極になるようにプラズマ発
生電源を接続し、平行磁界の最大値になる高さがイオン
シース幅より大きくしたことを特徴とする特許請求の範
囲第１項記載のマグネトロン型プラズマ処理装置。(4) A plasma generation power source is connected to the electrode so that the electrode becomes a cathode, and the height at which the parallel magnetic field reaches a maximum value is greater than the width of the ion sheath. magnetron type plasma processing equipment. （５）前記電極がスパッタリングターゲットになり、か
つ該ターゲットと対向して被処理基板が設けられている
ことを特徴とする特許請求の範囲第１項記載のマグネト
ロン型プラズマ処理装置。(5) The magnetron plasma processing apparatus according to claim 1, wherein the electrode serves as a sputtering target, and a substrate to be processed is provided opposite the target. （６）前記電極にエッチングすべき基板が設けられてい
ることを特徴とする特許請求の範囲第１項記載のマグネ
トロン型プラズマ処理装置。(6) The magnetron type plasma processing apparatus according to claim 1, wherein the electrode is provided with a substrate to be etched.
JP61220738A 1986-09-18 1986-09-18 High-density plasma generator Expired - Fee Related JP2537210B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP61220738A JP2537210B2 (en) 1986-09-18 1986-09-18 High-density plasma generator
US07/330,933 US4891560A (en) 1986-09-18 1989-03-27 Magnetron plasma apparatus with concentric magnetic means

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61220738A JP2537210B2 (en) 1986-09-18 1986-09-18 High-density plasma generator

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JPS6376328A true JPS6376328A (en) 1988-04-06
JP2537210B2 JP2537210B2 (en) 1996-09-25

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JP (1) JP2537210B2 (en)

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