JPS6373627A - Dry processing device - Google Patents

Abstract

PURPOSE:To contrive accomplishment of highly efficient and uniform dry process by a method wherein the ultraviolet rays directing to the ceiling surface and the circumferential wall surface of the title device are utilized in the dry process by reflecting them to a sample using a reflecting plate. CONSTITUTION:The reflecting plates 21, 22 and 23 provided on the ceiling surface 11 and the circumferential wall surface 12 of a sample chamber 7 are constituted in such a manner that quadrangular pyramid-shaped protruding parts are arranged in line on them, and ultraviolet rays sent from a lamp 10 are reflected so that they are directed to a wafer 1. For example, the ultraviolet rays coming from the lamp 10 are used as the reflection ultraviolet rays 25 directed to the wafer 1 by reflecting them with a reflecting plate, and reflection ultraviolet rays 27 directing to the wafer 1 are formed by reflecting the ultraviolet rays 26 using the reflecting plate 22. Also, among the reflection light reflected by the reflecting plates 21-23, there is reflection light going to the wafer 1 by the reflection made on the other reflecting plate. Accordingly, the coefficient of utilization of the quantity of light of the ultraviolet rays to be used for a resist stripping is high, and the resist stripping can be completed in a short period. Also the illuminance on the wafer 1 can be equalized, the resist stripping makes progress on each part at the same speed, and also it can be performed uniformly without generation of irregularity.

Description

Detailed Description of the Invention [Summary] The present invention provides a dry process apparatus used in the manufacturing process of semiconductor devices, in which a reflector plate is provided on the bowl surface and peripheral wall surface of a sample chamber that accommodates a sample, and the sample chamber is directly exposed to an ultraviolet lamp. In addition to the ultraviolet rays emitted from the ultraviolet lamp, the ultraviolet rays directed toward the ceiling and peripheral walls are also reflected by the reflector toward the sample and used in the dry process, thereby increasing the efficiency and uniformity of the dry process. It is something that

[Industrial application field]

The present invention relates to dry process equipment, and particularly to dry process equipment used in the manufacturing process of semiconductor devices.

[Prior art] In the manufacturing process of semiconductor devices, cleaning of the surface of a silicon wafer, resist stripping to partially remove the resist to form a resist pattern, cleaning of the surface of a chrome mask, removal of organic matter, and improvement of the surface are performed. Dry process equipment that utilizes light energy is used in such applications.

FIG. 2 shows an example of a conventional dry process apparatus used for resist stripping. In the figure, reference numeral 1 denotes an exposed wafer, which is placed on a sample stage 2 and heated to a predetermined temperature by a heater 4 in conjunction with a temperature control 21 and an IH device 3.

5 is a base, 6 is a cover, and forms an airtight sample chamber 7 in which the wafer 1 is accommodated.

Oxygen 02 is supplied into the sample chamber 7 as ozone o3 through an ozonizer 8, and the sample chamber 7 is set to an ozone atmosphere. Ozone o3 in the sample chamber 7 is exhausted from the boat 9.

Reference numeral 10 denotes an ultraviolet lamp, which is installed near the ceiling of the sample chamber 7. The wafer 1 is located directly below the lamp 10.

The ceiling surface 11 and peripheral wall surface 12 of the sample chamber 5, ie, the inner surface of the cover 6, are normal surfaces.

[Problem that the invention seeks to solve]

The ultraviolet rays 13 directed from the lamp 10 toward the ceiling surface 11 and the surrounding wall surface 12 are not well reflected here, and the amount of reflected ultraviolet rays 14 directed toward the wafer 1 is not large, and the wafer 1 is mainly reflected by the lamp 1.
The wafer 1 is irradiated with ultraviolet light 15 from the wafer 1.

Therefore, the total amount of ultraviolet light emitted from the lamp 10 m
The ratio of the amount of light irradiating the wafer 1 to the amount of light m, that is, the utilization rate of the light m for resist stripping is low. Therefore, there is a problem that the efficiency of resist stripping is not good and the resist stripping takes a correspondingly long time.

Further, the lamp 10 has a spiral shape as shown in FIG. 3, for example, in order to equalize the illuminance of the ultraviolet rays on the wafer 1, but the wafer 1 is almost only irradiated with direct ultraviolet rays from the lamp 10. lamp 10.
A difference in illuminance occurs between the portion facing the gap 16 of the lamp 10 and the portion facing the gap 16 of the lamp 10. For this reason, there is a problem that resist stripping is uneven and resist stripping is not performed uniformly.

[Means for solving problems]

The present invention provides a dry process apparatus comprising a sample chamber for storing a sample therein, and an ultraviolet lamp installed in the sample chamber for irradiating the sample with ultraviolet rays. , a reflecting plate is provided to reflect the ultraviolet rays from the ultraviolet lamp toward the sample.

[Effect]

The reflecting plate reflects the ultraviolet rays emitted from the ultraviolet lamp toward the ceiling surface and the peripheral wall surface, and directs the ultraviolet rays toward the sample to be used in the dry process.

〔Example〕

FIG. 1 shows a dry process apparatus 2 which is an embodiment of the present invention.
Indicates 0. In the figure, the same components as those shown in FIG. 1 are denoted by the same reference numerals, and the explanation thereof will be omitted.

21, 22, and 23 are reflecting plates, which are provided on the ceiling surface 11 and peripheral wall surface 12 of the sample chamber 7, respectively.

Each of the reflecting plates 21 , 22 , 23 has a configuration in which, for example, quadrangular pyramidal protrusions are lined up on a plane, and reflects the ultraviolet rays from the lamp 10 toward the wafer 1 .

For example, the ultraviolet rays 24 from the lamp 10 are reflected by the reflector and directed toward the wafer 1 (reflected ultraviolet rays 25, ultraviolet Fl12
The ultraviolet rays 6 are reflected by the reflecting plate 22 to become reflected ultraviolet rays 27 directed toward the wafer 1, and furthermore, the ultraviolet rays 28 are reflected by the reflecting plate 23 to become reflected ultraviolet rays 29 directed toward the wafer 1. Also, among the reflected light rays reflected by each of the reflecting plates 21 to 23, some reflected light rays head toward another reflecting plate, are reflected there, and head toward the wafer 1.

In this way, in the ozone atmosphere, the wafer 1 has
In addition to the direct ultraviolet rays 30 from the lamp 10, there are also ultraviolet rays 25, 27, and 29 reflected by the reflectors 21, 22, and 23.
etc. are irradiated.

Therefore, firstly, the proportion of the amount of light used for resist stripping out of the total light transmission of the ultraviolet rays emitted from the lamp 10, that is, the ratio of the amount of light used for resist stripping,
The utilization rate of the amount of ultraviolet light is higher than that of 0, and resist stripping can be completed in a shorter amount of time.

and secondly, the illumination on the wafer 1 is averaged and resist stripping proceeds at the same distal location for each section;
It is done evenly and evenly.

No resist remains locally, and visual inspection using a microscope after resist stripping is completed becomes easy.

In addition, silicon wafer cleaning is possible by providing the reflective plates 21, 22, and 23 as described above.

The chromium mask cleaning, organic matter removal, surface improvement, etc. are performed efficiently and uniformly in the same way as the resist stripping described above.

(Effects of the Invention) According to the present invention, ultraviolet rays emitted from the ultraviolet lamp in a direction different from the sample are also used in the dry process.
The dry process can be carried out efficiently, in a shorter time, and uniformly over the entire surface of the sample.

[Brief explanation of the drawing]

Fig. 1 is a diagram showing a dry process device as an example of the present invention, Fig. 2 is a diagram showing an example of a conventional dry process device, and Fig. 3 is a diagram showing the shape of an example of an ultraviolet lamp. It is. In the figure, 1 is an exposed wafer, 2 is a sample stage, 5 is a base, 6 is a cover, 7 is a sample chamber, 10 is an ultraviolet lamp, 11 is a ceiling surface, 12 is a peripheral wall surface, 20 is a dry process device, 21 ~23 is a reflector, 24, 26, 28 is an ultraviolet ray, 25, 27, 294; is a reflection plate, 30 is a direct ultraviolet ray. Agent Patent Attorney Sada Igeta - ゛, - 11th row and η＼・Ya diagram 2nd diagram

Claims (1)

[Claims] A sample chamber (7) that accommodates the sample (1) therein, and an ultraviolet lamp (10) that is provided within the sample chamber (7) and irradiates the sample (1) with ultraviolet light. In the dry process apparatus, ultraviolet rays (24, 26, 28) from the ultraviolet lamp (10) are applied to the sample (1) on the ceiling surface (11) and peripheral wall surface (12) of the sample chamber (7). A dry process device characterized by having a configuration in which a reflecting plate (21, 22, 23) is provided to reflect the light toward the direction of the object.