JPS6372535U - - Google Patents
Info
- Publication number
- JPS6372535U JPS6372535U JP16699686U JP16699686U JPS6372535U JP S6372535 U JPS6372535 U JP S6372535U JP 16699686 U JP16699686 U JP 16699686U JP 16699686 U JP16699686 U JP 16699686U JP S6372535 U JPS6372535 U JP S6372535U
- Authority
- JP
- Japan
- Prior art keywords
- crystal substrate
- force transmitting
- detection
- force
- transmitting body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 1
Landscapes
- Force Measurement Appropriate To Specific Purposes (AREA)
Description
第１図はこの考案の第一の実施例を示す縦断面
図、第２図はキヤツプを取り外した状態の平面図
、第３図はｐ―Ｓｉ１１０におけるピエゾ抵抗係
数を示す特性図、第４図は検出素子の形状を示す
平面図、第５図ａ，ｂ，ｃはブリツジ回路図、第
６図ａ，ｂ，ｃは各種の応力の発生状態を示す特
性図、第７図は製造工程図、第８図はこの考案の
第二の実施例を示す縦断側面図、第９図はキヤツ
プを取り外した状態の平面図である。
１……単結晶基板、２……検出面、３……検出
素子、４……起歪体、６……支持部、７……中心
部。
Fig. 1 is a vertical cross-sectional view showing the first embodiment of this invention, Fig. 2 is a plan view with the cap removed, Fig. 3 is a characteristic diagram showing the piezoresistance coefficient in p-Si110, Fig. 4 5 is a plan view showing the shape of the detection element, FIG. 5 a, b, c is a bridge circuit diagram, FIG. 6 a, b, c is a characteristic diagram showing various stress generation states, and FIG. 7 is a manufacturing process diagram. 8 is a longitudinal sectional side view showing a second embodiment of this invention, and FIG. 9 is a plan view with the cap removed. DESCRIPTION OF SYMBOLS 1...Single crystal substrate, 2...Detection surface, 3...Detection element, 4...Strain body, 6...Support part, 7...Center part.
Claims (1)
子を備えた検出面が一面に形成された単結晶基板
を設け、中心部と周辺部とのいずれか一方を支持
部とし他方を作用部とした起歪体を設け、この起
歪体の表面に前記単結晶基板を接着固定し、前記
起歪体の前記作用部に力伝達体を一体的に突出形
成したことを特徴とする力検出装置。 A single-crystal substrate with a detection surface formed over one surface is equipped with a detection element that changes electrical resistance by mechanical deformation, and one of the center and peripheral parts is used as a support part and the other part is used as an action part. What is claimed is: 1. A force detection device comprising: a force transmitting body, the single crystal substrate being adhesively fixed to the surface of the strain body, and a force transmitting body integrally protruding from the acting portion of the strain body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16699686U JPS6372535U (en) | 1986-10-30 | 1986-10-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16699686U JPS6372535U (en) | 1986-10-30 | 1986-10-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6372535U true JPS6372535U (en) | 1988-05-14 |
Family
ID=31098506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16699686U Pending JPS6372535U (en) | 1986-10-30 | 1986-10-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6372535U (en) |
-
1986
- 1986-10-30 JP JP16699686U patent/JPS6372535U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6372536U (en) | ||
| JPS6372535U (en) | ||
| JPS63183526U (en) | ||
| JPH0161631U (en) | ||
| JPH0181547U (en) | ||
| JPS6358731U (en) | ||
| JPS6327846U (en) | ||
| JPH0385543U (en) | ||
| JPH0342532U (en) | ||
| JPS6122369U (en) | semiconductor pressure sensor | |
| JPS61185164U (en) | ||
| JPS6196901U (en) | ||
| JPS61110138U (en) | ||
| JPS62177063U (en) | ||
| JPH01137438U (en) | ||
| JPS6372999U (en) | ||
| JPS62140572U (en) | ||
| JPS6341184U (en) | ||
| JPH034239U (en) | ||
| JPS6172866U (en) | ||
| JPS62163740U (en) | ||
| JPS63105568U (en) | ||
| JPS6210598U (en) | ||
| JPH0360366U (en) | ||
| JPS58182135U (en) | Diffusion type semiconductor pressure sensor |