JPS6370140U - - Google Patents

Info

Publication number
JPS6370140U
JPS6370140U JP16338386U JP16338386U JPS6370140U JP S6370140 U JPS6370140 U JP S6370140U JP 16338386 U JP16338386 U JP 16338386U JP 16338386 U JP16338386 U JP 16338386U JP S6370140 U JPS6370140 U JP S6370140U
Authority
JP
Japan
Prior art keywords
semiconductor wafer
axis direction
crystal axis
flat
utility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16338386U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP16338386U priority Critical patent/JPS6370140U/ja
Publication of JPS6370140U publication Critical patent/JPS6370140U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図Aは本考案に係る半導体ウエーハの第1
の具体例を示す底面図であり、第1図Bはその正
面図である。また第1図Cは、第1の具体例にお
ける結晶軸方向表示部位の形成要領の説明図であ
る。第2図Aは本考案に係る半導体ウエーハの第
2の具体例を示す底面図であり、第2図Bはその
正面図である。また第2図Cは、第2の具体例に
おける結晶軸方向表示部位の形成要領の説明図で
ある。また第3図は在来の半導体ウエーハの斜視
図であり、第4図はキヤリヤ内に収納された在来
の半導体ウエーハの正面図である。 11……半導体ウエーハ、15……結晶軸方向
表示部位〔溝〕、18……結晶軸方向表示部位〔
段部〕。
FIG. 1A shows the first semiconductor wafer according to the present invention.
FIG. 1B is a bottom view showing a specific example, and FIG. 1B is a front view thereof. Further, FIG. 1C is an explanatory diagram of the formation procedure of the crystal axis direction display portion in the first specific example. FIG. 2A is a bottom view showing a second specific example of a semiconductor wafer according to the present invention, and FIG. 2B is a front view thereof. Moreover, FIG. 2C is an explanatory diagram of the formation procedure of the crystal axis direction display portion in the second specific example. 3 is a perspective view of a conventional semiconductor wafer, and FIG. 4 is a front view of a conventional semiconductor wafer housed in a carrier. 11...Semiconductor wafer, 15...Crystal axis direction display part [groove], 18...Crystal axis direction display part [
Danbe].

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 実質上円形の外郭を具えた表面を平坦な半導体
ウエーハの裏面に、オリエンテーシヨン・フラツ
トに相当する結晶軸方向表示部位を設けたことを
特徴とする半導体ウエーハ。
1. A semiconductor wafer characterized in that a crystal axis direction indicating region corresponding to an orientation flat is provided on the back surface of a semiconductor wafer having a flat surface having a substantially circular outline.
JP16338386U 1986-10-23 1986-10-23 Pending JPS6370140U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16338386U JPS6370140U (en) 1986-10-23 1986-10-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16338386U JPS6370140U (en) 1986-10-23 1986-10-23

Publications (1)

Publication Number Publication Date
JPS6370140U true JPS6370140U (en) 1988-05-11

Family

ID=31091529

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16338386U Pending JPS6370140U (en) 1986-10-23 1986-10-23

Country Status (1)

Country Link
JP (1) JPS6370140U (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58201621A (en) * 1982-05-19 1983-11-24 Hitachi Ltd Foamed article with skin and manufacture thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58201621A (en) * 1982-05-19 1983-11-24 Hitachi Ltd Foamed article with skin and manufacture thereof

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