JPS6369968A - Vapor deposition device - Google Patents

Abstract

PURPOSE:To obtain the title vapor deposition device capable of improving the uniformity of the thickness and quality of the vapor-deposited film on a substrate, by arranging a meshy accelerating electrode capable of impressing a voltage between a meshy electrode and a substrate while keeping the interval between the accelerating electrode and the meshy electrode uniform. CONSTITUTION:The vapor deposition device of this invention is formed by a crucible 11, a heater 12, an ionization filament 13, an electron drawing electrode 14, a heat shielding plate 15, the meshy electrode 16, the meshy accelerating electrode 17, the substrate 18, and a vacuum chamber 19. Besides, the interval between the electrode 16 and the accelerating electrode 17 is kept uniform. When the vapor deposition device of such a structure is operated, all the equipotential lines between the electrode 16 and the accelerating electrode 17 are paralleled with the electrodes. Accordingly, although the ionization vaporization substance is placed extremely low, the vapor crosses the parallel electric field straightforward and reaches the substrate 18, the distribution is uniform, and the thickness and quality of the obtained vapor-deposited film are uniformized.

Description

Detailed Description of the Invention [Summary] The present invention provides a vapor deposition apparatus in which a mesh-like accelerating electrode capable of applying a voltage between a mesh-like electrode that adjusts an electric field and a substrate is uniformly connected to the mesh-like electrode. By arranging the ions while maintaining a certain gap, ions toward the substrate can travel in a straight line even when the accelerating voltage is low, and the uniformity of the thickness and quality of the deposited film formed on the substrate can be improved. Improved.

[Industrial application field]

The present invention provides an ion plati
ng) method or cluster ion beam vapor deposition method.

[Conventional technology]

Conventionally, cluster ・
Ion beam (cluster t.

n beam) evaporation method is known.

This method involves ejecting the vapor of a substance to be deposited onto a substrate in a vacuum chamber, creating clusters (lumped atomic groups) in which many atoms in the vapor are loosely bonded, and showering these clusters with electrons. This is a technique in which the cluster is made into a cluster ion in which one atom is ionized, and the cluster ion is accelerated to collide with the substrate to form a deposited film.

FIG. 6 is a cross-sectional side view of a main part for explaining a conventional example of a vapor deposition apparatus that performs cluster ion beam vapor deposition.

In the figure, l is the crucible, 2 is the heat shield, plate, and 3 is the 2
An ionizing filament that is heated to 000 (t') or more and emits thermionic electrons for ionization; 4 is an electron extraction electrode that accelerates thermionic electrons emitted from the ionizing filament 3; and 5 is an electrode that blocks radiant heat from the ionizing filament 3. 6 is a heat shield plate; 6 is an accelerating electrode for accelerating ionized clusters and causing them to collide with a substrate together with non-ionized neutral clusters to form a deposited film; 7 is cluster ions, Eo+, Eo 2, E+ , Et , E2
indicate equipotential lines, respectively.

When operating this vapor deposition apparatus, the voltages to be applied to each part are exemplified as follows.

Crucible 1: 5 (KV) Ionization filament 3: 4.7 (KV) Electron extraction electrode 4: 10 (KV) Heat shield plate 5: 4.7 (KV) Accelerating electrode 6:0
(KV) When such a voltage is applied, Equipotential line E61: 0.8 (KV) Eo: 1. 0 (KV) same
E+: 2. 0 (KV) same
Ex: 3. 0 (KV) Es
: 4. 0 (KV).

In the vapor deposition apparatus shown in FIG. 6, as is clear from the figure, the equipotential lines are deep (soaked) inside the electron extraction electrode 4, and cluster ions are generated due to the lens action caused by this potential penetration. 7 reaches the substrate following a complicated trajectory, resulting in uneven ion distribution on the substrate, resulting in non-uniformity in the thickness and quality of the formed thin film.

Therefore, a vapor deposition apparatus as shown in FIG. 7 was developed (refer to Japanese Patent Laid-Open No. 124919/1983 if necessary).

FIG. 7 shows a cutaway side view of the main parts of the improved vapor deposition apparatus,
The same symbols as those used in FIG. 6 indicate the same parts or have the same meaning.

The difference between this vapor deposition apparatus and the vapor deposition apparatus described with reference to FIG. 6 is that clusters and
The mesh-like electrode 8 is installed in a plane perpendicular to the ion traveling direction, and is made to have the same potential as the electron extraction electrode 4. Note that cooling water is allowed to flow inside the mesh-like electrode 8.

With this configuration, the equipotential lines do not penetrate in one direction of the crucible as explained with reference to FIG. 6, and the equipotential lines become approximately parallel above the electron extraction electrode 4, as seen in FIG. . When cluster ions pass through such a parallel electric field, they follow a substantially straight trajectory. Therefore,
The distribution of cluster ions reaching the substrate becomes uniform,
As a result, the thickness and quality of the obtained thin film become uniform.

[Problem that the invention seeks to solve]

In the improved vapor deposition apparatus shown in FIG. 7, the equipotential lines are parallel in the vicinity of the mesh electrode 8, but as they move away from there, they are also disturbed. If there is such a disturbance in the electric field and the accelerating voltage is low, a problem similar to the phenomenon explained in FIG. 6 will occur, and the distribution of cluster ions will not be uniform, resulting in a decrease in film thickness. A uniform and high quality deposited film cannot be obtained.

The present invention further adds mesh-like electrodes and appropriately selects their arrangement to adjust the electric field so that the ionized evaporated substance reaches the substrate with a uniform distribution regardless of the accelerating voltage. be able to do so.

[Means for solving problems]

In the vapor deposition apparatus according to the present invention, an evaporation source (for example, a crucible 11
) is arranged in a plane perpendicular to the ionized evaporated material toward the substrate (e.g., the substrate 18) in a region where the evaporated material from the evaporated material is ionized, and is at the same potential as the electron extraction electrode (e.g., the electron extraction electrode 14). a mesh-like electrode (for example, the mesh-like electrode 16), and a mesh-like acceleration electrode (for example, the mesh-like acceleration electrode) that maintains a uniform gap with the mesh-like electrode and is disposed between the mesh-like electrode and the substrate. 17).

[Function] When the above means is adopted, the ionized evaporated substance toward the substrate travels in a straight line even if the accelerating voltage is low, so that the substance deposited on the substrate is uniformly distributed. The uniformity of the film thickness and film quality of the vapor-deposited film formed is improved.

〔Example〕

FIG. 1 shows a cutaway side view of essential parts of an embodiment of the present invention.

In the figure, 11 is a crucible, 12 is a heater, 13 is an ionization filament, 14 is an electron extraction electrode, 15 is a heat shield plate, 16 is a mesh electrode, 17 is a mesh acceleration electrode, 18 is a substrate, and 19 is a vacuum. Each room is shown. In this embodiment, the electrode 16 and the accelerating electrode 1
7 is maintained uniformly, and preferably each mesh is aligned, although this is not essential. It is also assumed that the crucible 11 contains copper.

FIG. 2 shows a front view of essential parts of the mesh-like accelerating electrode 17.

When operating this embodiment, the voltages to be applied to each part are exemplified as follows.

Crucible 11 near 00 (V) Ionization filament 13:500 (V) Electron extraction electrode 14 near 00 (V) Heat shield plate 15:500 (V) First accelerating electrode 16:700 (V) Second accelerating electrode 17:0 (V) or -1 (KV) substrate 1
8: o (V) Vacuum chamber 19: 0 (V) When operated under these conditions, all the equipotential lines between the electrode 16 and the accelerating electrode 17 become parallel to those electrodes, and ionization and evaporation occur. Although the accelerating voltage is extremely low as illustrated above, the substance crosses the parallel electric field in a straight line and reaches the substrate 18, and its distribution is uniform, so that the resulting copper vapor deposited film The film thickness and film quality were also uniform.

FIG. 3 shows a cutaway side view of essential parts for explaining the second embodiment of the present invention, and the same symbols as those used in FIGS. 1 and 2 indicate the same parts or shall have the same meaning.

The difference between this embodiment and the embodiments shown in FIGS. 1 and 2 is that the distance between the electrode 16 and the accelerating electrode 17 is narrowed, and the distance is 1 [o] to 1O( c.
I+1].

In this way, it is possible to better suppress disturbances in potential due to influences from a vacuum chamber, etc., so that the substrate 18
It is possible to further improve the uniformity of the ionized evaporated material that is reached.

FIG. 4 is an explanatory diagram of the main part showing the potential distribution between the electrode 16 and the accelerating electrode 17 seen in FIG. 3, and the same symbols as those used in FIG. 3 indicate the same parts. or have the same meaning.

In the figure, the arrow indicates the direction of the electric field, and in this case, -700 (V) is applied to the acceleration electrode 17 to make the acceleration more effective.

As is clear from the figure, by aligning the meshes of electrode 16 and accelerating electrode 17, a vertical electric field can be generated, thus reducing the amount of ionized evaporated material trapped in the meshes.

FIG. 5 shows a cutaway side view of essential parts for explaining the third embodiment of the present invention, and the same symbols as those used in FIGS. 1 to 4 indicate the same parts or shall have the same meaning.

This embodiment differs from the embodiments shown in FIGS. 1 to 4 in that the shape of the electrode 16 and the accelerating electrode 17 form part of a sphere.

In this way, the electrode 16 and the accelerating electrode 17 are completely perpendicular to the evaporated material emitted from the crucible 11 in a conical shape, and even if the distance from the crucible 11 to the substrate 18 is short, the ionized evaporated material will be deposited sufficiently and evenly.

(Effects of the Invention) In the vapor deposition apparatus according to the present invention, a mesh-like acceleration electrode capable of applying a voltage between the mesh-like electrode that adjusts the electric field and the substrate maintains a uniform gap between the mesh-like electrode and the mesh-like electrode. The configuration is such that it is placed in the same position.

When the above configuration is adopted, even if the accelerating voltage is low, the ionized evaporated substance toward the substrate travels in a straight line, so that the substance deposited on the substrate is uniformly distributed, and as a result, the substance is formed on the substrate. The uniformity of the thickness and quality of the deposited film is improved.

[Brief explanation of the drawing]

FIG. 1 is a cutaway side view of essential parts of an embodiment of the present invention, FIG. 2 is a front view of essential parts of a mesh-like accelerating electrode, and FIG. 3 is a cutaway side view of essential parts of a second embodiment of the present invention. , FIG. 4 is an explanatory diagram of the potential distribution, FIG. 5 is a cutaway side view of the main part of the third embodiment of the present invention, and FIGS. 6 and 7 are cutaway side views of the main part of the conventional example. represents. In the figure, 11 is a crucible, 12 is a heater, 3 is an ionizing filament, 14 is an electron extraction electrode, 15 is a heat shield plate, 16 is a mesh electrode, 17 is a mesh acceleration electrode, 18 is a substrate, and 19 is a Each vacuum chamber is shown. Fig. 1 A side view of the main part of the embodiment Fig. 3 A side view of the main part of the embodiment Fig. 4 An illustration of potential distribution Fig. 4 Fig. 6 A cutaway side view of the main part of the conventional example Fig. 7

Claims (1)

[Scope of Claims] A mesh-like electrode arranged in a plane perpendicular to the ionized evaporated material directed toward the substrate in a region where evaporated material from an evaporation source is ionized and made to have the same potential as an electron extraction electrode. . A vapor deposition apparatus comprising: a mesh-like acceleration electrode that maintains a uniform gap between the mesh-like electrode and the mesh-like acceleration electrode and is arranged between the mesh-like electrode and the substrate.