JP3065382B2 - Film material deposition equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION The present invention is, you depositing a material such as aluminum to fill-time, such as the plastics sheet
Regarding deposition apparatus of full Irumu like material.

[0002]

2. Description of the Related Art When depositing an evaporating material (coating material) such as aluminum with a constant film thickness on a film of plastics or the like running at a high speed, the friction between the film running drive mechanism and the film usually causes the film to be positive. Is accumulated on the film, and the film on which the positive charges are accumulated repels the vaporized material at the time of vapor deposition, and significantly reduces the vapor deposition efficiency. In addition, the non-uniformity of the positive charge on the film has a bad influence on the uniformity of the film thickness. In order to solve these problems, the electron beam is irradiated on the film just before the film running position enters the deposition possible area,
It is possible to completely neutralize the positive charge on the film.

FIG. 5 shows a vapor deposition apparatus proposed based on the above considerations. In FIG. 1, reference numeral 1 denotes a vacuum chamber for generating an electron beam, and an electron beam generator 2 is provided above the vacuum chamber 1. Reference numeral 3 denotes a film, and the film 3 is driven by a film supply driving unit 4 and a film winding driving unit 5 in the direction of the arrow in the figure. In addition, 6 and 7
This is a film positioning drum. Film 3 is vacuum chamber 1
Is configured to pass through an elongate gap provided on the side of the. Reference numeral 8 denotes a vapor deposition chamber disposed adjacent to the vacuum chamber 1, and the film 3 runs through an elongated gap provided on a side of the vapor deposition chamber 8. In the lower part of the vapor deposition chamber 8,
A crucible 10 containing an evaporation material 9 and an electron gun 11 are provided. The electron beam generated from the electron gun 11 is deflected 270 ° by an electromagnet (not shown),
The material 9 in the crucible 10 is irradiated. Reference numeral 12 denotes an electron gun power supply, and reference numeral 13 denotes an exhaust system.

In the above-described configuration, the film 3 such as plastics, which is a material to be vapor-deposited, is driven by the driving units 4 and 5 in the direction of the arrow. In the vapor deposition chamber 8, the electron gun 1
Electrons from 1 are deflected by 270 °, irradiate the vapor deposition material 9 in the crucible 10, and heat the material 9 to a high temperature to evaporate the material. The evaporated material adheres to the film 3 and evaporation is performed. Before the film 3 enters the vapor deposition chamber 8, the film 3 is irradiated with the electron beam from the electron beam generator 2 in the vacuum chamber 1, and the positive charge is neutralized in advance, thereby improving the vapor deposition efficiency. Further, the unevenness of the vapor deposition is eliminated.

[0005]

As the electron beam generator 2 used in the above proposed apparatus, an apparatus having an elongated filament in a direction perpendicular to the running direction of the film 3 is used because the width of the film 3 is large. There must be. FIG. 6 shows an example of such an electron beam generator. Reference numeral 15 denotes a linear tungsten filament longer than the width of the film 3. Both ends of the filament 15 are supported by a support mechanism 16, and a heating current is supplied from a filament heating power supply 17 so that a predetermined beam current can be obtained from the filament emission surface area. The shape of the filament 15 is determined in consideration of the life of the filament and an appropriate filament current. For example, evaporation of the filament material, damage to the filament surface due to ion bombardment, and the like are considered. The electron beam generated from the filament 15 is accelerated by applying an acceleration voltage from an acceleration power supply 19 between the grounded anode electrode 18 and the filament 15. Adjustment of the amount of the electron beam reaching the film 3 from the electron beam generator 2 is performed by applying a control voltage from a grid power supply 21 to the grid electrode 20.

In such an electron beam generator,
The shape of the filament considering the life of the filament is
The cross-sectional area of the filament increases, and as a result, the heating current for heating to a predetermined filament temperature becomes large. Therefore, the uniformity of the electron beam in the width direction of the film 3 is significantly deteriorated by the self-magnetic field generated near the filament 15. Therefore, even if an attempt is made to neutralize the positive charges using such an electron beam generator, charges are partially left on the film surface, and the quality of the film finally formed by vapor deposition deteriorates. Further, even if a positive charge distribution exists in the width direction of the film 3, the distribution of the electron beam in the width direction of the film cannot be controlled correspondingly. Further, there is a disadvantage that the structure of the filament supporting mechanism is complicated because the filament 15 is elongated. That is, in the case of this linear type filament, if a simple supporting structure is used, a stable beam current cannot be obtained for a long time due to the influence of thermal expansion, thermal distortion and the like of the filament.

[0007] The present invention, a film such has been made in view of the problems, and its object is to eliminate most of the influence of charging of the fill beam, can be performed efficiently and uniformly deposited a particular material fill arm An object of the present invention is to realize an apparatus for depositing a shape material.

[0008]

Means for Solving the Problems] deposition apparatus of the film-like material according to the present invention, deposition and means for continuously driving the fill arm, a specific material to the film at a predetermined position of the travel path of the film Vapor deposition means, a plurality of detectors for detecting the state of charge of the film in a direction perpendicular to the running direction of the film before the vapor deposition position of the film running path, and a charge detecting position for the film running path And between the deposition position, a plurality of charged particle beam generating means for irradiating the film with a charged particle beam arranged in a direction perpendicular to the running direction of the film, and each according to the detection signal of each detector Control means for controlling the intensity of the charged particle beam from the charged particle beam generation means.

[0009]

According to the present invention, there is provided an apparatus for depositing a film-like material,
Detects the state of charge of the film in a direction perpendicular to the running direction of the film, and between the charge detection position of the running path of the film and the deposition position, a plurality of charged particles arranged in a direction perpendicular to the running direction of the film. From the beam generating means,
The film is irradiated with a charged particle beam having an intensity corresponding to the charged state of the film.

[0010]

Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 shows a vapor deposition apparatus according to the present invention, and the same parts as those of the proposed apparatus of FIG. The difference between this embodiment and the proposed apparatus of FIG. 5 is that the method of irradiating the film 3 with the electron beam in the vacuum chamber 1 is devised. In the upper part of the vacuum chamber 1,
An electron beam generator 25 is provided. The electron beam generator 25 includes a plurality of electron guns 26 as shown in FIG.
a to 26d. The plurality of electron guns 26a-2
6d are arranged in a line in the direction perpendicular to the running direction of the film 3 (the width direction of the film), but the number of electron guns is not limited to the four shown in the figure, and it is better to have as many as possible. Each electron gun 26 is composed of a filament 27, a grid electrode 28, and an anode electrode 29, as shown in FIG. As the filament 27, a filament obtained by winding a tungsten filament without induction, or a filament made of lanthanum hexaboride (LaB6) is used. The adjustment of the beam amount (beam intensity) generated from the filament 27 is performed by changing the grid voltage from the grid electrode 30 supplied to the grid electrode 28 and the filament current supplied from the filament power supply 31 to the filament 27. be able to. The electron beam generated from the filament 27 is supplied between the anode electrode 29 and the filament 27 by an acceleration power source 3.
2 is accelerated by applying an acceleration voltage. Note that the electron beam is irradiated onto the film 3 with a predetermined spread according to the acceleration voltage.
Since it depends on the distance between the filament 27 and the film 3, the shape of the grid electrode 28, the grid voltage, and the accelerating voltage, appropriate values and shapes are determined in advance according to design conditions (beam current, spread angle, film width, etc.) Need to be sought.

Returning to FIG. 1, before the position where the electron beam generated from the electron beam generator 25 is irradiated on the film 3, a plurality of capacitance detectors 33 are arranged in the width direction of the film 3.
Is arranged. The number of the detectors 33 is made equal to the number of the electron guns 26, and the detectors 33 are arranged in a line in a direction perpendicular to the running direction of the film 3. Signals detected by the plurality of detectors 33 are supplied to a control device 35 such as a computer via an AD converter 34.
The control device 35 controls each of the electron guns 26 via the DA converter 36.
A deflection signal is supplied to a plurality of deflectors 37 for deflecting the electron beam from the controller, and each power supply is controlled. Of course, the number of deflectors 37 is equal to the number of the electron guns 26.

In the above arrangement, the positive charge distribution in the width direction of the film generated on the film 3 running at high speed is detected by a plurality of capacitance detectors 33 arranged in the width direction of the film 3. You. The signal detected by the detector 33 is supplied to a control device 35 via an AD converter 34 and is subjected to arithmetic processing. The values processed by the respective detectors 35 are supplied to the grid electrodes 30 of the electron guns 26 corresponding to the respective detectors 33, and individually control the amounts (intensities) of the electron beams from the respective electron guns 26. As a result,
The intensity of the electron beam from each electron gun 26 is set to a value necessary and sufficient to locally neutralize the positive charge distribution on the film 3 which each electron gun bears. Film 3
The positive charges are neutralized by the irradiation of the electron beam from each electron gun in the electron beam generator 26, and are sent to the vapor deposition chamber 8. Therefore, in the vapor deposition chamber 8, vapor deposition is efficiently performed on the film 3, and since there is no ubiquitous distribution of positive charges, unevenness in vapor deposition is eliminated, and the quality of the film formed on the film is significantly improved. Become.

FIGS. 4A and 4B are diagrams respectively showing a positive charge distribution in the width direction of the film 3 and a beam intensity distribution from each electron gun with respect to the detected positive charge distribution. The positive charge distribution is indicated by. FIG.
In the case (a), the positive charge distribution in the width direction of the film 3 is uniform, and the intensity I1 of the electron beam from each electron gun is obtained.
.About.In are equal. In the case of FIG. 4B, the amount of positive charges at the edge of the film is large and decreases toward the center. In this case, the electron beam intensity from the electron gun near the edge of the film
Since the amount of charge to be neutralized is large, the film is irradiated with an electron beam of high intensity, and an electron gun near the center is irradiated with an electron beam of low intensity. Therefore, even if the charging state is not uniform, the charging in the width direction of the film 3 can be accurately neutralized.

Further, in this embodiment, in order to completely neutralize the positive charges on the film 3, the electron beam can be scanned by the deflector 37 in the running direction of the film 3. The scanning signal given to the deflector 37 is obtained by processing a value detected by the detector 33 and obtaining the scanning signal by an arbitrary waveform generator. For this scanning waveform, it is necessary to determine in advance the correspondence between the film width distribution and the positive charge distribution and the correspondence between the scanning waveform and the positive charge distribution based on experimental data. By scanning each electron beam in the film running direction in this way, it is possible to make the beam intensity distribution of the electron beam in the film running direction uniform. The scanning speed of the electron beam must be sufficiently higher than the running speed of the film.

Although the embodiment of the present invention has been described in detail, the present invention is not limited to this embodiment. For example, the case where the film is positively charged and the case where the electron beam is irradiated on the film has been described as an example, but the present invention is also applied to a case where the film is negatively charged and the film is irradiated with positive ions. Can be. In addition, although the scanning of the electron beam is performed using an electrostatic deflector, an electromagnetic deflector may be used. The scanning of the electron beam need not be performed depending on the charging state.

[0016]

As described above, the film-form material vapor deposition apparatus according to the present invention detects the state of charge of the film in the direction perpendicular to the direction of travel of the film, and determines the charge detection position on the film travel path. Between the deposition position,
Since a plurality of charged particle beam generators arranged in a direction perpendicular to the running direction of the film are used to irradiate the film with a charged particle beam having an intensity corresponding to the charging state of the film, the film-like material to be deposited is Of the specific material can be effectively eliminated, and the specific material can be efficiently and uniformly deposited on the film material. In addition, since long filaments are not used, the influence of deformation of the filaments can be eliminated.

[Brief description of the drawings]

FIG. 1 shows an embodiment of the device according to the invention.

FIG. 2 is a diagram showing details of an electron beam generator used in the embodiment of FIG.

FIG. 3 is a diagram showing details of an electron beam generator used in the embodiment of FIG.

FIG. 4 is a diagram showing a positive charge distribution and an electron beam intensity distribution.

FIG. 5 is a diagram showing a proposed device for neutralizing the charging of a film.

6 is a diagram showing details of an electron beam generator used in the proposed device of FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Vacuum chamber 3 ... Film 8 ... Vapor deposition chamber 9 ... Evaporation material 11 ... Electron gun 12 ... Power supply 13 ... Exhaust system 25 ... Electron beam generator 26 ... Electron gun 27 ... Filament 28 ... Grid electrode 29 ... Anode electrodes 30, 31 32, power supply 33, capacitance detector 34, AD converter 35, control device 36, DA converter 37, electrostatic deflector

Claims (1)

(57) [Claims] 1. A film-like material to be deposited (hereinafter referred to as a film).
And means for continuously traveling referred to as a beam), a deposition means for depositing a particular material to the film at a predetermined position of the travel path of the film, in front of the deposition positions of the travel path of the film, the film A plurality of detectors for detecting the state of charge of the film in a direction perpendicular to the running direction of the film, and between the charge detection position and the deposition position of the running path of the film, arranged in a direction perpendicular to the running direction of the film. A plurality of charged particle beam generating means for irradiating the film with a charged particle beam, and control means for controlling the intensity of the charged particle beam from each charged particle beam generating means according to the detection signal of each detector. Evaporator for film-like materials provided.