JPS6366928A - Thermal treatment equipment - Google Patents
Thermal treatment equipmentInfo
- Publication number
- JPS6366928A JPS6366928A JP21099486A JP21099486A JPS6366928A JP S6366928 A JPS6366928 A JP S6366928A JP 21099486 A JP21099486 A JP 21099486A JP 21099486 A JP21099486 A JP 21099486A JP S6366928 A JPS6366928 A JP S6366928A
- Authority
- JP
- Japan
- Prior art keywords
- jacket
- boat
- reaction tube
- opening
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007669 thermal treatment Methods 0.000 title 1
- 238000010438 heat treatment Methods 0.000 claims abstract description 21
- 239000012495 reaction gas Substances 0.000 claims abstract description 17
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 6
- 239000007789 gas Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- POIUWJQBRNEFGX-XAMSXPGMSA-N cathelicidin Chemical compound C([C@@H](C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CO)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H]([C@@H](C)CC)C(=O)NCC(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H](CCC(N)=O)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CC(O)=O)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CC(N)=O)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](C(C)C)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)O)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CO)C(O)=O)NC(=O)[C@H](CC=1C=CC=CC=1)NC(=O)[C@H](CC(O)=O)NC(=O)CNC(=O)[C@H](CC(C)C)NC(=O)[C@@H](N)CC(C)C)C1=CC=CC=C1 POIUWJQBRNEFGX-XAMSXPGMSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［発明の目的コ
（産業上の利用分野）
本発明は熱処理装置に関し、特に半導体基板（ウェハ）
を熱処理する縦型拡散炉に係わる。[Detailed Description of the Invention] [Purpose of the Invention (Industrial Application Field) The present invention relates to a heat treatment apparatus, and in particular to a heat treatment apparatus for semiconductor substrates (wafers).
This relates to a vertical diffusion furnace for heat treating.
（従来の技術）
従来、縦型拡散炉として、例えば第４図（ａ）、（ｂ）
に示すものが知られている。 ′図中の１は、下
□部に開口部２を有した反応管である。この反応管１の
上部には反応ガスの導入口３が設けられ、同反応ｌ１１
１の下部側壁には排気口４が設けられている。前記反応
管１の開口部２には上下動するキャップ５が設けられ、
これにより前記間口部２が開閉される。前記キャップ５
の上にはボート受台６が設けられ、このボート受台６に
は複数のウェハ（図示せず）を水平にセットするボート
７が設けられている。なお、前記ボート受台６は、ボー
ト７を均熱領域に効率よく保持したり、あるいは反応管
１内からの放熱を遮断してキャップ５の昇温を防ぐ為に
設けられている。このジャケット８の下部側壁には、反
応ガスがジャケット内に滞留するのを防ぐための排気部
９が設けられている。(Prior art) Conventionally, as a vertical diffusion furnace, for example, Fig. 4 (a) and (b)
The following are known. '1 in the figure is a reaction tube having an opening 2 in the lower square part. A reaction gas inlet 3 is provided at the top of the reaction tube 1, and the reaction tube 1
An exhaust port 4 is provided in the lower side wall of 1. A cap 5 that moves up and down is provided at the opening 2 of the reaction tube 1,
As a result, the frontage portion 2 is opened and closed. Said cap 5
A boat pedestal 6 is provided on the boat pedestal 6, and a boat 7 for horizontally setting a plurality of wafers (not shown) is provided on the boat pedestal 6. The boat pedestal 6 is provided to efficiently hold the boat 7 in the soaking area or to block heat radiation from inside the reaction tube 1 to prevent the temperature of the cap 5 from rising. An exhaust section 9 is provided on the lower side wall of the jacket 8 to prevent the reaction gas from staying in the jacket.
こうした構造の縦型拡散炉において、反応ガスは反応管
１の導入口３から入ってボート７の周囲を流れ、その後
ジャケット８の開口部９、反応管１の排気口４を通って
外部に排出される。また、熱処理後キャップ５を下げた
ときは第４図（ｂ）に示すようになる。ここで、反応管
１の開口部２及びジャケット８の開口部９は夫々外気に
さらされるが、ボート７はジャケット８により外気から
遮断される。もし、反応管１とジャケット８の隙間が非
常に小さく、開口断面積が小さいならば、反応ガスは反
応管１の排気口３や反応管１とジャケット８の開口部９
からも排気され、外気はジャケット８内に入る事はない
。In a vertical diffusion furnace with such a structure, the reaction gas enters through the inlet 3 of the reaction tube 1, flows around the boat 7, and is then discharged to the outside through the opening 9 of the jacket 8 and the exhaust port 4 of the reaction tube 1. be done. Moreover, when the cap 5 is lowered after the heat treatment, it becomes as shown in FIG. 4(b). Here, the opening 2 of the reaction tube 1 and the opening 9 of the jacket 8 are each exposed to the outside air, but the boat 7 is shielded from the outside air by the jacket 8. If the gap between the reaction tube 1 and the jacket 8 is very small and the opening cross-sectional area is small, the reaction gas will flow through the exhaust port 3 of the reaction tube 1 or the opening 9 between the reaction tube 1 and the jacket 8.
Exhaust air is also exhausted from the jacket 8, and outside air does not enter inside the jacket 8.
しかしながら、実際の場合、ジャケット８は上下動させ
るため、動作マージンとしである程度の隙間があり、反
応ガスは反応管１とジャケット８の隙間や反応管１の排
気口４で十分排気される。However, in reality, since the jacket 8 is moved up and down, there is a certain amount of clearance as an operating margin, and the reaction gas is sufficiently exhausted through the clearance between the reaction tube 1 and the jacket 8 and the exhaust port 4 of the reaction tube 1.
従って、反応管１の開口部２より下に下がっているジャ
ケット８の開口部９から逆流する。これは、ボート７に
セットされたウェハに汚染等を引き起こし、半導体装置
の特性劣化を引き起こす。ところで、反応ガスの流量を
極端に増加させると、反応管１とジャケット８の隙間や
反応管１の排気口３からだけでは排気ができなくなり、
ジャケット８の開口部９からも反応ガスが排気され外気
の逆流は防止される。しかし、逆流を防ぐためには大流
量の反応ガスが必要で、ガスドーピングユニットの流−
制御装置の大形化が必要など問題がある。Therefore, there is a backflow from the opening 9 of the jacket 8 which is lower than the opening 2 of the reaction tube 1. This causes contamination and the like to the wafers set on the boat 7, causing deterioration of the characteristics of the semiconductor device. By the way, if the flow rate of the reaction gas is increased extremely, it will no longer be possible to exhaust it only through the gap between the reaction tube 1 and the jacket 8 or the exhaust port 3 of the reaction tube 1.
The reaction gas is also exhausted from the opening 9 of the jacket 8, and backflow of outside air is prevented. However, in order to prevent backflow, a large flow rate of the reactant gas is required, and the flow rate of the gas doping unit is
There are problems such as the need to increase the size of the control device.
また、高温な反応ガスがクリーンルーム内に大量に放出
される等の問題がある。Further, there are problems such as a large amount of high-temperature reaction gas being released into the clean room.
（発明が解決しようとする問題点）
本発明は上記事情に鑑みてなされたもので、外気が反応
管内に逆流するのを防止し、素子特性の良好なウェハを
得ることができる熱処理装置を提供することを目的とす
る。(Problems to be Solved by the Invention) The present invention has been made in view of the above circumstances, and provides a heat treatment apparatus that prevents outside air from flowing back into the reaction tube and can obtain wafers with good device characteristics. The purpose is to
［発明の構成］
（問題点を解決するための手段）
本発明は、一端側にボート出入用の開口部を有し、かつ
反応ガスの導入口及び排出口を夫々を有する反応管と、
この反応管の開口部を＃ｌＩ閉するキャップと、このキ
ャップに直接あるいはボート受台を介して設けられたボ
ートと、このボートの外周に設けられ排気用開口部を有
する筒状のジャケットと、熱処理後に前記反応管の開口
部とジャケットとの隙間を塞ぐ複数に分割可能なリング
状の部材とを具備することを特徴とする。[Structure of the Invention] (Means for Solving the Problems) The present invention provides a reaction tube having an opening for entering and exiting a boat on one end side, and having an inlet and an outlet for a reaction gas, respectively;
A cap that closes the opening of the reaction tube, a boat provided directly to the cap or via a boat cradle, and a cylindrical jacket provided around the outer circumference of the boat and having an exhaust opening; The method is characterized by comprising a ring-shaped member that can be divided into a plurality of parts that closes the gap between the opening of the reaction tube and the jacket after heat treatment.
（作用）
本発明によれば、熱処理後に反応管の開口部とジャケッ
トとの隙間を塞ぐ複数に分割可能なリング状の部材を設
けることにより、反応管とジャケットとの隙間を実効的
に小さくし、外気が反応管内に逆流するのを防止できる
。したがって、本発明に係る熱処理装置を用いて熱処理
したウェハにより半導体装置を作製すれば、良好な素子
特性を有した半導体装置が得られる。(Function) According to the present invention, the gap between the reaction tube and the jacket can be effectively reduced by providing a ring-shaped member that can be divided into a plurality of parts to close the gap between the opening of the reaction tube and the jacket after heat treatment. , it is possible to prevent outside air from flowing back into the reaction tube. Therefore, if a semiconductor device is manufactured using a wafer heat-treated using the heat treatment apparatus according to the present invention, a semiconductor device having good device characteristics can be obtained.
（実施例） 以下、本発明の一実施例を第１図（ａ）。(Example) An embodiment of the present invention is shown in FIG. 1(a) below.
（ｂ）、第２因及び第３図を参照して説明する。This will be explained with reference to (b), the second factor, and FIG.
図中の１１は、下部に開口部１２を有した反応管である
。この反応管１１の上部には反応ガスの導入口１３が設
けられ、同反応管１１の下部側壁には排気口１４が設け
られている。前記反応管１１の開口部１２には上下動す
るキャップ１５が設けられ、これにより前記開口部１２
が開閉される。前記キャップ１５の上には、上部中央に
突出部１６ａを有したボート受台１６が設けられている
。ここで、ボート受台１６は、後記ボートを均熱領域に
効率よく保持したり、あるいは反応管１１内からの放熱
を遮断してキャップ１５の昇温を防ぐ為に設けられてい
る。前記ボート受台１６の突出部１６ａ上には、複数の
ウェハ（図示せず）を水平にセットするボート１７が設
けられている。11 in the figure is a reaction tube having an opening 12 at the bottom. A reaction gas inlet 13 is provided at the upper part of the reaction tube 11, and an exhaust port 14 is provided at the lower side wall of the reaction tube 11. A cap 15 that moves up and down is provided at the opening 12 of the reaction tube 11, so that the opening 12
is opened and closed. A boat pedestal 16 is provided on the cap 15 and has a protrusion 16a at the center of the top. Here, the boat pedestal 16 is provided to efficiently hold the boat described later in the soaking area or to block heat radiation from inside the reaction tube 11 to prevent the temperature of the cap 15 from rising. A boat 17 is provided on the protrusion 16a of the boat pedestal 16 to horizontally set a plurality of wafers (not shown).
前記ボート受台１６の縁部上には、前記ボート１７を囲
む筒状のジャケット１８が設けられている。このジャケ
ット１８の下部側壁には、反応ガスがジャケット内に滞
留するのを防ぐための排気部１９が設けられている。ま
た、前記反応管１１の上端部付近には、第２図に示す如
く２分割されたリング状の部材２０が設けられている。A cylindrical jacket 18 surrounding the boat 17 is provided on the edge of the boat pedestal 16. An exhaust section 19 is provided on the lower side wall of the jacket 18 to prevent the reaction gas from staying in the jacket. Further, near the upper end of the reaction tube 11, a ring-shaped member 20 divided into two parts is provided as shown in FIG.
この部材２０は、熱処理後キャップ１５を下げる時は、
第３図に示す如く合体して反応管１１とジャケット１８
との隙間を埋めるようになっている。前記リング状の部
材２０の下部には、該部材２０の位置を検知して自動的
に適正な位置に調整するセンサー２１が設けられている
。When lowering the cap 15 after heat treatment, this member 20
As shown in FIG. 3, the reaction tube 11 and jacket 18 are combined.
It is designed to fill the gap between A sensor 21 is provided at the bottom of the ring-shaped member 20 to detect the position of the member 20 and automatically adjust it to an appropriate position.
こうした構造の縦型拡散炉において、反応管１１の導入
口１３から導入された反応ガスはボート１７の周囲を通
り、更に、ジャケット１８の排気部１９、反応管１１の
排出口１４を通って外に排出される。この際、リング状
の部材２０は必要ないので、反応管１１の開口部１２の
下端から外れた位置にある（第１図（ａ）及び第２図図
示）。In the vertical diffusion furnace having such a structure, the reaction gas introduced from the inlet 13 of the reaction tube 11 passes around the boat 17, and then exits through the exhaust part 19 of the jacket 18 and the outlet 14 of the reaction tube 11. is discharged. At this time, the ring-shaped member 20 is not needed and is located away from the lower end of the opening 12 of the reaction tube 11 (as shown in FIGS. 1(a) and 2).
一方、熱処理後キャップ１８を下げている時は、リング
状の部材２０は反応管１１の関口部１２の下端に移動し
、ジャケット１８の外壁に限りなく近ずきリングを形成
する。ここで、前記部材２０は、反応管１１とジャケッ
ト１８との隙間を埋め、反応管１１の開口部１２の面積
を小さくしている。On the other hand, when the cap 18 is lowered after the heat treatment, the ring-shaped member 20 moves to the lower end of the entrance part 12 of the reaction tube 11 and comes as close as possible to the outer wall of the jacket 18 to form a ring. Here, the member 20 fills the gap between the reaction tube 11 and the jacket 18 and reduces the area of the opening 12 of the reaction tube 11.
上記実施例によれば、反応管１１の付近に複数に分割可
能なリング状の部材２０を設けたｉ造となっているため
、下記に示す効果を有する。According to the above embodiment, since the ring-shaped member 20 that can be divided into a plurality of parts is provided near the reaction tube 11, the structure has the following effects.
■熱処理後キャップ１５を下げた時、前記部材２０を合
体させて反応管１１の下端部に移動させれば、反応管１
１とジャケット１８の隙間が前記部材２０により埋めら
れてその隙間が実効的に小さくなる。その結果、この１
１１間と反応管の排気口１４だけでは反応ガスの排気が
不十分となり、壁間と反応管の排気口から排出できない
ガスが下方に押し下げられる。従って、反応ガスがジャ
ケット１８の排気部１９からも排出され、外気の逆流が
防止される。■When the cap 15 is lowered after heat treatment, if the member 20 is combined and moved to the lower end of the reaction tube 11, the reaction tube 1
The gap between the jacket 1 and the jacket 18 is filled by the member 20, and the gap is effectively reduced. As a result, this 1
11 and the exhaust port 14 of the reaction tube are insufficient to exhaust the reaction gas, and the gas that cannot be exhausted from the space between the walls and the exhaust port 14 of the reaction tube is pushed downward. Therefore, the reaction gas is also exhausted from the exhaust section 19 of the jacket 18, and backflow of outside air is prevented.
■ジャケット１８と反応管１１の隙間を必要以上に小さ
くする必要がなくなり、上下動の動作マージンが増え、
トラブルが減少した。■It is no longer necessary to make the gap between the jacket 18 and the reaction tube 11 smaller than necessary, increasing the operating margin for vertical movement.
Trouble has decreased.
■リング状の部材２０と組合わせることにより、ジャケ
ット１８の形状に大きな自由度ができ、種々の変形ジャ
ケットが使える様になった。(2) By combining it with the ring-shaped member 20, there is a large degree of freedom in the shape of the jacket 18, and various deformed jackets can now be used.
■＾温な反応ガスがクリーンルーム内に放出されること
を減少できる。■^ It is possible to reduce the release of hot reaction gas into the clean room.
■反応管１１の開口部１２付近の濃度を低減できる。(2) The concentration near the opening 12 of the reaction tube 11 can be reduced.
なお、上記実施例では、リング状の部材が２分割される
場合について述べたが、これに限定されるものではなく
、３つ以上に分割されるリング状の部材でもよい。In the above embodiment, a case where the ring-shaped member is divided into two parts is described, but the present invention is not limited to this, and the ring-shaped member can be divided into three or more parts.
また、上記実施例では、リング状の部材の位置をセンサ
ーにより検知する場合について述べたが、センサーは必
ずしも必要なものではなく、例えば手動により位置を調
整してもよい。Further, in the above embodiment, a case has been described in which the position of the ring-shaped member is detected by a sensor, but the sensor is not necessarily necessary, and the position may be adjusted manually, for example.
［発明の効果］
以上詳述した如く本発明によれば、外気が反応管内に逆
流するのを防止し、素子特性の良好な半導体装置が得ら
れる熱処理装置を提供できる。[Effects of the Invention] As detailed above, according to the present invention, it is possible to provide a heat treatment apparatus that prevents outside air from flowing back into the reaction tube and provides a semiconductor device with good element characteristics.
第１因（ａ）は本発明の一実施例に係る縦型拡散炉の熱
処理時の断面図、同ＩＪ （ｂ）は同縦型拡散炉の熱処
理後の断面図、第２図は第１図（ａ）の縮小平面図、第
３図は第１図（ｂ）の縮小平面図、第４図（ａ）は−従
来の縦型拡散炉の熱処理時の断面図、同図（ｂ）は同縦
型拡散炉の熱処理後の断面図である。
１１・・・反応管、１２・・・開口部、１３・・・導入
口、１４・・・排出口、１５・・・キャップ、１６・・
・ボート受台、１７・・・ボート、１８・・・ジャケッ
ト、１９・・・排出部、２０・・・リング状の部材、２
１・・・センサー。
出願人代理人 弁理士 鈴江武彦
区
第４
に
（ｂ）
図The first factor (a) is a cross-sectional view of a vertical diffusion furnace according to an embodiment of the present invention during heat treatment, IJ (b) is a cross-sectional view of the same vertical diffusion furnace after heat treatment, and FIG. Figure 3 is a reduced plan view of Figure 1 (b), Figure 4 (a) is a cross-sectional view of a conventional vertical diffusion furnace during heat treatment, and Figure 3 (b) is a reduced plan view of Figure (a). is a cross-sectional view of the same vertical diffusion furnace after heat treatment. DESCRIPTION OF SYMBOLS 11... Reaction tube, 12... Opening part, 13... Inlet port, 14... Outlet port, 15... Cap, 16...
- Boat cradle, 17... Boat, 18... Jacket, 19... Discharge part, 20... Ring-shaped member, 2
1...Sensor. Applicant's agent Patent attorney Suzue Takehiko Ward No. 4 (b) Figure
Claims (3)
ガスの導入口及び排出口を夫々有する反応管と、この反
応管の開口部を開閉するキャップと、このキャップに直
接あるいはボート受台を介して設けられたボートと、こ
のボートの外周に設けられ排気用開口部を有する筒状の
ジャケットと、熱処理後に前記反応管の開口部とジャケ
ットとの隙間を塞ぐ複数に分割可能なリング状の部材と
を具備することを特徴とする熱処理装置。(1) A reaction tube that has an opening for entering and exiting the boat at one end and has an inlet and an outlet for the reaction gas, respectively, a cap that opens and closes the opening of the reaction tube, and a A boat provided via a pedestal, a cylindrical jacket provided on the outer periphery of the boat and having an exhaust opening, and a plurality of parts that can be divided into a plurality of parts to close the gap between the opening of the reaction tube and the jacket after heat treatment. A heat treatment apparatus comprising a ring-shaped member.
する特許請求の範囲第１項記載の熱処理装置。(2) The heat treatment apparatus according to claim 1, wherein the ring-shaped member is divided into two parts.
られ、かつ前記リング状の部材の下方に該部材を反応管
とジャケットの最適位置に調整するセンサが設けられて
いることを特徴とする特許請求の範囲第１項記載の熱処
理装置。(3) The boat is provided on the cap via a boat holder, and a sensor is provided below the ring-shaped member to adjust the member to an optimal position between the reaction tube and the jacket. A heat treatment apparatus according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21099486A JPS6366928A (en) | 1986-09-08 | 1986-09-08 | Thermal treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21099486A JPS6366928A (en) | 1986-09-08 | 1986-09-08 | Thermal treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6366928A true JPS6366928A (en) | 1988-03-25 |
| JPH044749B2 JPH044749B2 (en) | 1992-01-29 |
Family
ID=16598567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21099486A Granted JPS6366928A (en) | 1986-09-08 | 1986-09-08 | Thermal treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6366928A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0291931A (en) * | 1988-09-29 | 1990-03-30 | Tel Sagami Ltd | Vertical heat treatment device |
| JPH02290490A (en) * | 1989-04-28 | 1990-11-30 | Toshiba Ceramics Co Ltd | Vertical type heat treatment furnace |
| WO1993023713A1 (en) * | 1992-05-15 | 1993-11-25 | Shin-Etsu Quartz Products Co., Ltd. | Vertical heat treatment apparatus and heat insulating material |
-
1986
- 1986-09-08 JP JP21099486A patent/JPS6366928A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0291931A (en) * | 1988-09-29 | 1990-03-30 | Tel Sagami Ltd | Vertical heat treatment device |
| JPH02290490A (en) * | 1989-04-28 | 1990-11-30 | Toshiba Ceramics Co Ltd | Vertical type heat treatment furnace |
| WO1993023713A1 (en) * | 1992-05-15 | 1993-11-25 | Shin-Etsu Quartz Products Co., Ltd. | Vertical heat treatment apparatus and heat insulating material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH044749B2 (en) | 1992-01-29 |
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