JPS6365215U - - Google Patents
Info
- Publication number
- JPS6365215U JPS6365215U JP15918386U JP15918386U JPS6365215U JP S6365215 U JPS6365215 U JP S6365215U JP 15918386 U JP15918386 U JP 15918386U JP 15918386 U JP15918386 U JP 15918386U JP S6365215 U JPS6365215 U JP S6365215U
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- phase growth
- growth apparatus
- ascl
- rotating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 238000001947 vapour-phase growth Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Description
第１図は本考案の一実施例によるＧａ／ＡｓＣ
ｌ３／Ｈ２反応系ＧａＡｓ気相成長装置の概略断
面図、第２図は、従来装置の一例を示す概略断面
図である。
図中、１は加熱炉、２は石英反応管、３及び４
は反応用ガスの導入管、５はＧａソース・ボート
、６はＧａソース、７は基板ホルダー、８はＧａ
Ａｓ基板、９は回転軸、１０は歯車、１１は駆動
軸、１２は歯車、１３はシール、１４はプーリー
、１５は軸受である。
Figure 1 shows Ga/AsC according to an embodiment of the present invention.
A schematic cross-sectional view of an l 3 /H 2 reaction-based GaAs vapor phase growth apparatus. FIG. 2 is a schematic cross-sectional view showing an example of a conventional apparatus. In the figure, 1 is a heating furnace, 2 is a quartz reaction tube, 3 and 4
is a reaction gas introduction pipe, 5 is a Ga source boat, 6 is a Ga source, 7 is a substrate holder, 8 is a Ga source
An As substrate, 9 a rotating shaft, 10 a gear, 11 a drive shaft, 12 a gear, 13 a seal, 14 a pulley, and 15 a bearing.
Claims (1)
長装置において、Ｇａ金属の入つたソース・ボー
ト部をガス流方向に対し平行な面内で自転させる
手段を備えたことを特徴とする気相成長装置。 A Ga/AsCl 3 /H 2 reaction system GaAs vapor phase growth apparatus comprising a means for rotating a source boat containing Ga metal in a plane parallel to the gas flow direction. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15918386U JPS6365215U (en) | 1986-10-17 | 1986-10-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15918386U JPS6365215U (en) | 1986-10-17 | 1986-10-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6365215U true JPS6365215U (en) | 1988-04-30 |
Family
ID=31083375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15918386U Pending JPS6365215U (en) | 1986-10-17 | 1986-10-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6365215U (en) |
-
1986
- 1986-10-17 JP JP15918386U patent/JPS6365215U/ja active Pending
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