JPS6363112A - Production of thin film magnetic head - Google Patents
Production of thin film magnetic headInfo
- Publication number
- JPS6363112A JPS6363112A JP20753786A JP20753786A JPS6363112A JP S6363112 A JPS6363112 A JP S6363112A JP 20753786 A JP20753786 A JP 20753786A JP 20753786 A JP20753786 A JP 20753786A JP S6363112 A JPS6363112 A JP S6363112A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- magnetic
- frequency electrode
- etching
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 59
- 239000010409 thin film Substances 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 42
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000012212 insulator Substances 0.000 claims abstract description 11
- 229910052742 iron Inorganic materials 0.000 claims abstract description 9
- 238000001020 plasma etching Methods 0.000 claims abstract description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 239000007795 chemical reaction product Substances 0.000 abstract description 15
- 239000000696 magnetic material Substances 0.000 abstract description 7
- 230000008878 coupling Effects 0.000 abstract description 3
- 238000010168 coupling process Methods 0.000 abstract description 3
- 238000005859 coupling reaction Methods 0.000 abstract description 3
- 229910000702 sendust Inorganic materials 0.000 description 7
- 229910000859 α-Fe Inorganic materials 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は薄膜磁気ヘッドの製造方法に関し、例えば、磁
気記録を行うことができる磁気ディスク装置や磁気テー
プ装置等に利用される。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method of manufacturing a thin film magnetic head, and is used, for example, in a magnetic disk device, a magnetic tape device, etc. that can perform magnetic recording.
(従来の技術)
第3図に薄膜磁気ヘッドの基本構造を示す。同図におい
て、5は薄膜磁気ヘッドを形成するための基板、1はF
e−A 1−3t合金(センダスト)等の鉄を主成分と
する強磁性体薄膜からなる磁気コアである。磁気コア1
は下部コア1aと上部コア1bとで構成され、磁気回路
を形成している。また、2はCu、Ant等の導電体薄
膜からなるリードであり、その一部が下部コア1aと上
部コア1bとの間に介装されている。3は5iOz *
511N4等の絶縁体層で、磁気コア1とリード2
を電気的に絶縁するものである。下部コア1aおよび上
部コア1bは、ギャップ部Aにおいて絶縁体N3を介し
て対向しており、バックコア部Bにおいて磁気的に結合
されている。4は磁気テープや磁気ディスク等の記録媒
体である。(Prior Art) FIG. 3 shows the basic structure of a thin film magnetic head. In the figure, 5 is a substrate for forming a thin film magnetic head, 1 is an F
A magnetic core made of a ferromagnetic thin film whose main component is iron, such as e-A 1-3t alloy (Sendust). magnetic core 1
is composed of a lower core 1a and an upper core 1b, forming a magnetic circuit. Further, 2 is a lead made of a conductive thin film such as Cu or Ant, and a part of the lead is interposed between the lower core 1a and the upper core 1b. 3 is 5iOz *
Magnetic core 1 and lead 2 with an insulating layer such as 511N4.
It electrically insulates the The lower core 1a and the upper core 1b face each other at the gap portion A with an insulator N3 interposed therebetween, and are magnetically coupled at the back core portion B. 4 is a recording medium such as a magnetic tape or a magnetic disk.
上記構成の薄膜磁気ヘッドにおいて、ヘッド効率に関連
する重要な要素として、バンクコア部Bにおける下部コ
ア1aと上部コア1bとの磁気的結合状態(以下前者と
いう)、および下部コア1aの磁気特性(以下後者とい
う)が挙げられる。In the thin film magnetic head with the above configuration, important factors related to head efficiency include the magnetic coupling state between the lower core 1a and the upper core 1b in the bank core section B (hereinafter referred to as the former), and the magnetic properties of the lower core 1a (hereinafter referred to as the former). (referred to as the latter).
このうち、前者についは、バックコア部Bの下部コア1
aの表面に何らの介在物も無く、また表面粗度の小さい
ことが要求される。これが満たされない場合、バックコ
ア部Bで磁気抵抗値が増大し、磁束が磁気コア1を流れ
にくくなり記録再生効率が低下する。このバックコア部
Bは、SiO□。Of these, for the former, lower core 1 of back core part B
It is required that there be no inclusions on the surface of a and that the surface roughness is small. If this condition is not satisfied, the magnetic resistance value increases in the back core portion B, making it difficult for magnetic flux to flow through the magnetic core 1, resulting in a decrease in recording and reproducing efficiency. This back core portion B is made of SiO□.
Si、N、等の絶縁体層3を部分的にエツチング加工し
て下部コア1aの表面を露出させることにより形成され
る。エツチング方法としては、湿式エツチング法、イオ
ンビームエツチング法等があるが、薄膜磁気ヘッドの特
徴である多チャンネル化等の高密度化に伴うヘッドの微
細化を図るためには、絶縁体N3のエツチングは反応性
イオンエツチングによることが不可欠である。It is formed by partially etching the insulating layer 3 of Si, N, etc. to expose the surface of the lower core 1a. Etching methods include wet etching, ion beam etching, etc., but in order to miniaturize the head due to the high density such as multi-channel, which is a feature of thin film magnetic heads, etching of insulator N3 is recommended. It is essential to use reactive ion etching.
また、後者すなわち下部コア1aの磁気特性をより向上
させる方法として、■下部コア1aをより厚くする。■
軟磁性材料である基板を用いることにより下部コア1a
を厚くすることと同様の効果を得る。という二つの方法
が考えられる。しかしながら、■の方法では、その加工
法や基板との密着性等に問題があり難しい。一方、従来
は基板として非磁性、非導電性である結晶化ガラス等を
用いていたが、基板と磁性体層との熱膨張率のずれの緩
和、ヘッドの対摩耗性の向上環を考慮した時、例えばM
n−Znフェライト基板で知られる軟磁性材料基板を用
いる前記■の方法が有利である。Furthermore, as a method for further improving the magnetic properties of the lower core 1a, 1) the lower core 1a is made thicker. ■
By using a substrate made of soft magnetic material, the lower core 1a
A similar effect can be obtained by thickening the . There are two possible methods. However, method (2) is difficult due to problems with its processing method, adhesion to the substrate, etc. On the other hand, conventionally, non-magnetic, non-conductive crystallized glass, etc., was used as the substrate, but in order to alleviate the difference in the coefficient of thermal expansion between the substrate and the magnetic layer, and to improve the head's wear resistance. time, for example M
The method (2) above using a soft magnetic material substrate known as an n-Zn ferrite substrate is advantageous.
(発明が解決しようとする問題点)
ところが、軟磁性材料基板を用いる前記■の方法を用い
た場合、第4図(alに示すように、軟磁性材料基板5
a上に磁性体層(下部コア)laを介して積層された絶
縁体層3をエツチングする時、一般に用いられる陰極結
合方式の反応性ドライエツチング装置(第1図参照)を
使用すると、次のような問題が生じる。(Problems to be Solved by the Invention) However, when using the method (2) using a soft magnetic material substrate, as shown in FIG. 4 (al), the soft magnetic material substrate 5
When etching the insulating layer 3 laminated on the magnetic layer (a) via the magnetic layer (lower core) la, if a commonly used cathode-coupled reactive dry etching device (see Figure 1) is used, the following will occur. A problem like this arises.
すなわち、■エツチング加工後一部露出した下部コア1
a上に反応生成物6〔第4図(b)参照〕が発生し、下
部コア1aの清浄な表面の露出を妨げる。■この反応生
成物6は化学的に極めて不活性であり、水や一般の有機
溶媒(キシレン、アセトン、エチルアルコール等)に不
溶であり、また酸やアルカリにも反応しないため除去が
困難である。In other words, ■lower core 1 partially exposed after etching
A reaction product 6 [see FIG. 4(b)] is generated on the surface of the lower core 1a, which prevents the clean surface of the lower core 1a from being exposed. ■This reaction product 6 is chemically extremely inert, insoluble in water and common organic solvents (xylene, acetone, ethyl alcohol, etc.), and does not react with acids or alkalis, making it difficult to remove. .
このため、反応生成物6を除去できないまま上部コア1
bを積層してヘッドを加工しなければならず、ヘッド効
率の良い薄膜磁気ヘッドを作製することができないとい
う問題があった。For this reason, the upper core 1 remains unremoved without the reaction product 6 being removed.
There was a problem in that the head had to be fabricated by laminating the magnetic heads, making it impossible to manufacture a thin-film magnetic head with good head efficiency.
(問題点を解決するための手段)
本発明に係る薄膜磁気ヘッドの製造方法は、導電性磁性
基板上に鉄系合金からなる磁性体層が形成され、該磁性
体層上に絶縁体層が形成された構造の薄膜磁気ヘッドの
製造方法であって、前記絶縁体層をエツチングして前記
磁性体層の一部を露出させる工程において、一つの高周
波電極が基板テーブルを兼ねたエツチング装置を用い、
該高周波電極上に前記導電性磁性基板を載置するととも
に、該導電性磁性基板と該高周波電極とを絶縁し、この
状態で、前記絶縁体層を反応性イオンエツチング法によ
りエツチングするものである。(Means for Solving the Problems) In the method for manufacturing a thin film magnetic head according to the present invention, a magnetic layer made of an iron-based alloy is formed on a conductive magnetic substrate, and an insulating layer is formed on the magnetic layer. A method for manufacturing a thin-film magnetic head having a structure in which a high frequency electrode is etched in a step of etching the insulating layer to expose a part of the magnetic layer using an etching device in which one high-frequency electrode also serves as a substrate table. ,
The conductive magnetic substrate is placed on the high frequency electrode, the conductive magnetic substrate and the high frequency electrode are insulated, and in this state the insulator layer is etched by a reactive ion etching method. .
(作用)
反応生成物の発生が、エツチング装置内における高周波
電極と薄膜磁気ヘッドを構成する要素の一つである磁性
体層とが基板を通して電気的に導通していること、およ
び磁性体層を構成する下部コアが鉄系合金であること等
が原因となっていることから、高周波電極と基板とを電
気的に絶縁した状態で、絶縁体層を反応性イオンエツチ
ング法により形成することにより、反応生成物の発生を
抑制する。(Function) The generation of reaction products is caused by the fact that the high-frequency electrode in the etching device and the magnetic layer, which is one of the elements constituting the thin-film magnetic head, are electrically connected through the substrate, and that the magnetic layer is This is due to the fact that the lower core is made of an iron-based alloy, so by forming an insulator layer using a reactive ion etching method while electrically insulating the high-frequency electrode and the substrate, Suppresses the generation of reaction products.
(実施例) 以下、本発明の一実施例を図面を参照して説明する。(Example) Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
本実施例においては、エツチング装置として第1図に示
すように、下部高周波電極12が基板テーブルを兼ねて
いる陰極結合方式の反応性ドライエツチング装置を用い
る。In this embodiment, as shown in FIG. 1, the etching apparatus is a cathode-coupled reactive dry etching apparatus in which the lower high-frequency electrode 12 also serves as a substrate table.
すなわち、同図において、11が上部高周波電極(アノ
ード)、12が前記した下部高周波電極(カソード)、
13がRF出力部である。また、磁気コア1 (下部コ
ア1a+上部コアlb)には磁気特性に優れたセンダス
トを、軟磁性材料基板にはMn−Znフェライト基板5
aをそれぞれ用いる。さらに、第2図(alに示すよう
に、 M n −Z nフェライト基板5aと下部高周
波電極12との間にテフロンシートもしくは石英板7を
置き、被エツチング層であるセンダスト膜(下部コア)
laと下部高周波電極12とを電気的に絶縁して反応性
イオンエツチングを行った。なお、第2図中符号3は絶
縁体層、8はフォトレジスト膜である。That is, in the figure, 11 is the upper high frequency electrode (anode), 12 is the lower high frequency electrode (cathode) mentioned above,
13 is an RF output section. In addition, Sendust, which has excellent magnetic properties, is used for the magnetic core 1 (lower core 1a + upper core lb), and Mn-Zn ferrite substrate 5 is used for the soft magnetic material substrate.
Use a respectively. Furthermore, as shown in FIG. 2 (al), a Teflon sheet or quartz plate 7 is placed between the Mn-Zn ferrite substrate 5a and the lower high-frequency electrode 12, and the sendust film (lower core) which is the layer to be etched is
Reactive ion etching was performed while electrically insulating la and the lower high-frequency electrode 12. Note that in FIG. 2, reference numeral 3 represents an insulator layer, and 8 represents a photoresist film.
エツチング条件は、何れも反応性ガスとしてCF4を用
い、ガス圧3.9Pa、高周波電力175Wである。The etching conditions were as follows: CF4 was used as the reactive gas, the gas pressure was 3.9 Pa, and the high frequency power was 175 W.
この結果、第2図(b)に示すように、反応生成物の発
生は起こらなかった。また、基板として銅板を用い、こ
の銅板上にセンダスト膜を積層して、上記と同様の条件
でエツチングを行った場合にも同様の結果が得られた。As a result, as shown in FIG. 2(b), no reaction products were generated. Similar results were also obtained when a copper plate was used as the substrate, a sendust film was laminated on the copper plate, and etching was performed under the same conditions as above.
なお、基板の導電性の影響を比較するため、以下に示す
比較実験を行った。Note that in order to compare the influence of the conductivity of the substrates, the following comparative experiment was conducted.
(比較実験例1)
絶縁性基板としてガラス基板と非導電性結晶化ガラスを
、導電性基板として上述のM n −Z nフェライト
基板と銅板をそれぞれ使用し、各々の基板上にセンダス
ト膜を積層し、これらをそれぞれ下部高周波電極12上
におき、反応性イオンエツチングを行った。その結果、
導電性基板上にのみ反応生成物が発生し、絶縁性基板上
には反応生成物の発生は見られなかった。(Comparative Experiment Example 1) A glass substrate and a non-conductive crystallized glass were used as insulating substrates, and the above-mentioned M n -Z n ferrite substrate and copper plate were used as conductive substrates, and a sendust film was laminated on each substrate. Then, each of these was placed on the lower high frequency electrode 12, and reactive ion etching was performed. the result,
Reaction products were generated only on the conductive substrate, and no reaction products were observed on the insulating substrate.
(比較実験例2)
M n −Z nフェライト基板上にセンダスト、(:
u。(Comparative Experiment Example 2) Sendust on Mn-Zn ferrite substrate, (:
u.
Ti、Nb、Niをそれぞれ積層したもの、および鉄板
(Fe>99.9%)、AJ板、St仮をそれぞれ下部
高周波電極12上におき、反応性イオンエツチングを行
った。その結果、Mn−Znフェライト基板を用いたも
のではセンダスト膜においてのみ反応生成物が発生し、
また、鉄板上においても同様な反応生成物が発生した。A stack of Ti, Nb, and Ni, an iron plate (Fe>99.9%), an AJ plate, and a temporary St plate were each placed on the lower high-frequency electrode 12, and reactive ion etching was performed. As a result, in the case of using a Mn-Zn ferrite substrate, reaction products were generated only in the sendust film,
Similar reaction products were also generated on the iron plate.
上記比較実験例1,2より、被エツチング層と下部高周
波電極が電気的に導通している時、被エツチング層が鉄
を主成分とする合金類である時に限り反応生成物が発生
することが分かる。From Comparative Experiment Examples 1 and 2 above, when the layer to be etched and the lower high-frequency electrode are electrically connected, reaction products are only generated when the layer to be etched is made of an alloy whose main component is iron. I understand.
(発明の効果)
以上説明したように、本発明に係る薄膜磁気ヘッドの製
造方法によれば、導電性磁性基板を用いた場合であって
も、絶縁体層をエツチングする際、鉄を主成分とする磁
性体層上への反応生成物の発生を抑制することができ、
磁気的結合の良好な薄膜磁気ヘッドを作製することがで
きる。(Effects of the Invention) As explained above, according to the method for manufacturing a thin film magnetic head according to the present invention, even when a conductive magnetic substrate is used, iron is the main component when etching the insulating layer. The generation of reaction products on the magnetic layer can be suppressed,
A thin film magnetic head with good magnetic coupling can be manufactured.
第1図は本発明の製造方法に利用される反応性ドライエ
ツチング装置の概略図、第2図は本発明の製造方法によ
って薄膜磁気ヘッドを作製する場合の一工程を示す断面
図、第3図は薄膜磁気ヘッドの基本構造を示す断面図、
第4図は従来の製造方法によって薄膜磁気ヘッドを作製
する場合の一工程を示す断面図である。
1・・・磁気コア 1a・・・下部コア1b・・
・上部コア 2・・・リード3・・・絶縁体N
4・・・記録媒体5・・・基板
5a・・・Mn−Znフェライト基板
6・・・反応生成物
7・・・テフロンシートもしくは石英板8・・・フォト
レジスト膜
11・・・上部高周波電極 12・・・下部高周波電極
13・・・RF出力部
A・・・ギャップ部 B・・・バンクコア部@7
図
第2図
第3図
第4図FIG. 1 is a schematic diagram of a reactive dry etching apparatus used in the manufacturing method of the present invention, FIG. 2 is a sectional view showing one step in manufacturing a thin film magnetic head by the manufacturing method of the present invention, and FIG. 3 is a cross-sectional view showing the basic structure of a thin-film magnetic head,
FIG. 4 is a cross-sectional view showing one step in manufacturing a thin film magnetic head by a conventional manufacturing method. 1... Magnetic core 1a... Lower core 1b...
・Upper core 2...Lead 3...Insulator N
4... Recording medium 5... Substrate 5a... Mn-Zn ferrite substrate 6... Reaction product 7... Teflon sheet or quartz plate 8... Photoresist film 11... Upper high frequency electrode 12... Lower high frequency electrode 13... RF output part A... Gap part B... Bank core part @7
Figure 2 Figure 3 Figure 4
Claims (1)
成され、該磁性体層上に絶縁体層が形成された構造の薄
膜磁気ヘッドの製造方法であって、前記絶縁体層をエッ
チングして前記磁性体層の一部を露出させる工程におい
て、一つの高周波電極が基板テーブルを兼ねた エッチング装置を用い、該高周波電極上に前記導電性磁
性基板を載置するとともに、該導電性磁性基板と該高周
波電極とを絶縁し、この状態で、前記絶縁体層を反応性
イオンエッチング法によりエッチングすることを特徴と
する薄膜磁気ヘッドの製造方法。[Claims] 1) A method for manufacturing a thin-film magnetic head having a structure in which a magnetic layer made of an iron-based alloy is formed on a conductive magnetic substrate, and an insulating layer is formed on the magnetic layer. , in the step of etching the insulating layer to expose a part of the magnetic layer, using an etching device in which one high-frequency electrode also serves as a substrate table, the conductive magnetic substrate is placed on the high-frequency electrode. At the same time, the conductive magnetic substrate and the high frequency electrode are insulated, and in this state, the insulator layer is etched by a reactive ion etching method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20753786A JPS6363112A (en) | 1986-09-03 | 1986-09-03 | Production of thin film magnetic head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20753786A JPS6363112A (en) | 1986-09-03 | 1986-09-03 | Production of thin film magnetic head |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6363112A true JPS6363112A (en) | 1988-03-19 |
Family
ID=16541369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20753786A Pending JPS6363112A (en) | 1986-09-03 | 1986-09-03 | Production of thin film magnetic head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6363112A (en) |
-
1986
- 1986-09-03 JP JP20753786A patent/JPS6363112A/en active Pending
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