JPS6362732U - - Google Patents
Info
- Publication number
- JPS6362732U JPS6362732U JP1987152130U JP15213087U JPS6362732U JP S6362732 U JPS6362732 U JP S6362732U JP 1987152130 U JP1987152130 U JP 1987152130U JP 15213087 U JP15213087 U JP 15213087U JP S6362732 U JPS6362732 U JP S6362732U
- Authority
- JP
- Japan
- Prior art keywords
- radiation
- detector
- conductivity
- low conductivity
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2914—Measurement of spatial distribution of radiation
- G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
- G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
- H10F30/292—Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Molecular Biology (AREA)
- Health & Medical Sciences (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19863633998 DE3633998A1 (de) | 1986-10-06 | 1986-10-06 | Strahlendetektor |
| DE3633998.9 | 1986-10-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6362732U true JPS6362732U (en, 2012) | 1988-04-25 |
| JPH062282Y2 JPH062282Y2 (ja) | 1994-01-19 |
Family
ID=6311156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987152130U Expired - Lifetime JPH062282Y2 (ja) | 1986-10-06 | 1987-10-02 | 放射線検出器 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4901126A (en, 2012) |
| JP (1) | JPH062282Y2 (en, 2012) |
| DE (1) | DE3633998A1 (en, 2012) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5434417A (en) * | 1993-11-05 | 1995-07-18 | The Regents Of The University Of California | High resolution energy-sensitive digital X-ray |
| US5771271A (en) * | 1997-04-16 | 1998-06-23 | Infimed, Inc. | Phototimer for radiology imaging |
| DE19804515B4 (de) * | 1998-02-05 | 2004-05-13 | Forschungszentrum Jülich GmbH | Ortsauflösender γ-Detektor |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3550094A (en) * | 1968-04-01 | 1970-12-22 | Gen Electric | Semiconductor data storage apparatus with electron beam readout |
| DE1812127A1 (de) * | 1968-12-02 | 1970-06-11 | Telefunken Patent | Halbleiteranordnung zum Messen ionisierender Strahlung |
| US3691389A (en) * | 1969-06-09 | 1972-09-12 | Ronald Ellis | Radiation detector comprising semi-conductor body incorporating a two-dimensional array of p-i-n-devices |
| DE2239953A1 (de) * | 1972-08-14 | 1974-02-28 | Siemens Ag | Detektoranordnung |
| DE2543065A1 (de) * | 1975-09-26 | 1977-03-31 | Siemens Ag | Verfahren zum herstellen einer ortsaufloesenden detektoranordnung |
| FR2490875A1 (fr) * | 1980-09-23 | 1982-03-26 | Thomson Csf | Photodiode comportant plusieurs elements photosensibles tres rapproches qui presentent entre eux un excellent decouplage |
| JPS5956773A (ja) * | 1982-09-25 | 1984-04-02 | Fuji Electric Corp Res & Dev Ltd | 半導体放射線検出素子 |
| US4688067A (en) * | 1984-02-24 | 1987-08-18 | The United States Of America As Represented By The Department Of Energy | Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages |
| JPH0678376A (ja) * | 1992-05-20 | 1994-03-18 | Nec Corp | パターン付きテレコン制御方式 |
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1986
- 1986-10-06 DE DE19863633998 patent/DE3633998A1/de not_active Withdrawn
-
1987
- 1987-10-01 US US07/103,383 patent/US4901126A/en not_active Expired - Fee Related
- 1987-10-02 JP JP1987152130U patent/JPH062282Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4901126A (en) | 1990-02-13 |
| DE3633998A1 (de) | 1988-04-14 |
| JPH062282Y2 (ja) | 1994-01-19 |