JPS6362237A - Etching liquid for cdte crystal - Google Patents
Etching liquid for cdte crystalInfo
- Publication number
- JPS6362237A JPS6362237A JP20746986A JP20746986A JPS6362237A JP S6362237 A JPS6362237 A JP S6362237A JP 20746986 A JP20746986 A JP 20746986A JP 20746986 A JP20746986 A JP 20746986A JP S6362237 A JPS6362237 A JP S6362237A
- Authority
- JP
- Japan
- Prior art keywords
- acid
- etching
- cdte
- weight
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 21
- 239000013078 crystal Substances 0.000 title claims abstract description 16
- 239000007788 liquid Substances 0.000 title abstract 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 20
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910004613 CdTe Inorganic materials 0.000 claims abstract description 14
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 12
- 235000014655 lactic acid Nutrition 0.000 claims abstract description 9
- 239000004310 lactic acid Substances 0.000 claims abstract description 9
- 230000007547 defect Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Weting (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
本発明は８５重量％の乳酸と、６０重量％の硝酸と、５
０重量％の弗化水素酸とを体積比２５：（５〜１２）：
（１〜６）で混合したエツチング液であり、ＣｄＴｅ結
晶の結晶欠陥を調べるための選択エツチング液である。Detailed Description of the Invention [Summary] The present invention comprises 85% by weight of lactic acid, 60% by weight of nitric acid, and 5% by weight of lactic acid.
0% by weight of hydrofluoric acid at a volume ratio of 25:(5-12):
This is the etching solution mixed in (1 to 6), and is a selective etching solution for investigating crystal defects in CdTe crystal.
本発明はカドミウム（Ｃｄ ）とテルル（Ｔｅ ）より
なる化合物半導体のエンチング液に関する。The present invention relates to an etching solution for compound semiconductors made of cadmium (Cd) and tellurium (Te).
ＣｄＴｅ結晶は太陽電池や放射線検知素子用の基板、ま
た赤外線検知素子のエピタキシャル成長用基板等に用い
られる。これらのデバイスの特性は結晶欠陥に依存する
場合が多く、結晶欠陥を表すエッチピットの密度を調べ
ることにより、結晶性を評価できると同時に、デバイス
特性を予測することもできる。CdTe crystals are used as substrates for solar cells, radiation detection elements, epitaxial growth substrates for infrared detection elements, and the like. The characteristics of these devices often depend on crystal defects, and by examining the density of etch pits representing crystal defects, it is possible to evaluate the crystallinity and at the same time predict the device characteristics.
従って、ＣｄＴｅ結晶表面にエッチビットを表出できる
エツチング液の出現が望まれている。Therefore, it is desired to develop an etching solution that can expose etch bits on the CdTe crystal surface.
文献によれば、ＣｄＴｅ単結晶の（１１１） Ｂ面の欠
陥を評価する選択エツチング液の組成は、８５重量％の
乳酸と、７０重量％の硝酸と、５０重量％の弗化水素酸
からなり、その体積比は２５：４：１である（Ｊｏｕｒ
ｎａｌ ｏｆ Ｖａｃｕｕｍ ５ｃｉｅｎｃｅ Ｔｅｃ
ｈｎｏｌｏｇｙＡｔ（３）１９８３ ｐ、１５９８〜１
６０３参照）。この文献によると、ＣｄＴｅ （１１１
）Ｂ面では均一なつや消しの黒色となり、（１１１）
Ａ面では鏡面でエソチビットのある表面となることが記
載されている。According to the literature, the composition of a selective etching solution for evaluating defects on the (111) B plane of a CdTe single crystal consists of 85% by weight lactic acid, 70% by weight nitric acid, and 50% by weight hydrofluoric acid. , the volume ratio is 25:4:1 (Jour
nal of Vacuum 5science Tec
hnologyAt(3) 1983 p, 1598-1
603). According to this literature, CdTe (111
) The B side has a uniform matte black color, (111)
It is stated that the A side has a mirror surface with esotivites.
しかしながら、本発明者の実験の結果、上記文献に記載
された組成ではエソチピ・ソトを観測することはできな
かった。However, as a result of the inventor's experiments, it was not possible to observe Esochipi-soto with the composition described in the above-mentioned document.
本発明のエツチング液の組成は８５重景気の乳酸と、６
０重量％の硝酸と、５０重量％の弗化水素酸からなり、
その体積比が２５：（５〜１２） ： （１〜６）
である。The composition of the etching solution of the present invention is 85% lactic acid and 6%
Consisting of 0% by weight nitric acid and 50% by weight hydrofluoric acid,
The volume ratio is 25: (5-12): (1-6)
It is.
このような本発明のエツチング液でＣｄＴｅ結晶をエツ
チングしたところ、（１１１）Ｂ面にエッチピットを観
測することができた。When a CdTe crystal was etched using the etching solution of the present invention, etch pits were observed on the (111)B plane.
まず、８５重量％の乳酸と、６０重量％の硝酸と、５０
重量％の弗化水素酸とを体積比２５： （５〜１２）：
（１〜６）で混合したエツチング液を作る。First, 85% by weight lactic acid, 60% by weight nitric acid, 50% by weight
% by weight of hydrofluoric acid at a volume ratio of 25: (5 to 12):
Make the etching solution mixed in steps (1 to 6).
この液中にＣｄＴｅ結晶を浸清し、撹拌する。CdTe crystals are immersed in this solution and stirred.
３０秒後に結晶を取り出し、水洗した後、乾燥させる。After 30 seconds, the crystals are taken out, washed with water, and then dried.
このような工程により、第１図に顕微鏡写真で示すよう
なＣｄＴｅ （１１１）Ｂ面のエッチピットが観測で
きた。図中、三角形に見える部分がエッチピットである
。Through this process, etch pits on the CdTe (111)B surface as shown in the micrograph in FIG. 1 could be observed. In the figure, the triangular-looking part is an etch pit.
なお、エツチング液の組成を種々替えて実験した結果、
硝酸および弗化水素酸の割合が、上記範囲より少ない場
合はほとんどエツチング作用がなく、反対に多いとエツ
チング作用が大きすぎて選択的にエツチングされず、エ
ッチピットは観測されなかった。As a result of experiments with various etching solution compositions,
When the ratio of nitric acid and hydrofluoric acid is less than the above range, there is almost no etching effect, and on the other hand, when it is more than the above range, the etching effect is too large and selective etching is not performed, and no etch pits are observed.
なお、上記実施例では８５重量％の乳酸と、６０重量％
の硝酸と、５０重景気の弗化水素酸を用いたが、他の濃
度の酸を用いる場合は濃度１００％に換算した比率２２
．２５・ （３〜７．２） ： （０，５〜３）を基準
とする。例えば、６０重量％の硝酸の代わりに、７０重
景気の硝酸を用いる場合は、体積比２５ ： （４，３
〜１０゜３）：（１〜６）で混合混合すればよい。In addition, in the above example, 85% by weight of lactic acid and 60% by weight
Nitric acid of 50% and hydrofluoric acid of 50% were used, but when using acids of other concentrations, the ratio 22 converted to 100% concentration was used.
．． 25. (3-7.2): Based on (0,5-3). For example, when using 70% nitric acid instead of 60% by weight nitric acid, the volume ratio is 25: (4,3
~10°3): Mixing may be carried out using steps (1 to 6).
本発明によれば、ＣｄＴｅ （１１１）Ｂ面のエッチピ
ットが観測できるので、結晶性を評価するうえで非常に
有効である。According to the present invention, etch pits on the CdTe (111)B plane can be observed, which is very effective in evaluating crystallinity.
第１図は本発明のエツチング液によりエッチピットが観
測されたＣｄＴｅ結晶（１１１）Ｂ面の顕微鏡写真であ
る。
】
ＣｄＴｅ結晶の（１１１） Ｂ面の顕微鏡写真第１図FIG. 1 is a micrograph of the (111) B surface of a CdTe crystal in which etch pits were observed using the etching solution of the present invention. ] Figure 1 Micrograph of (111) B-plane of CdTe crystal
Claims (1)
ことを特徴とするＣｄＴｅ結晶用エッチング液。[Claims] 85% by weight of lactic acid, 60% by weight of nitric acid, and 50% by weight of hydrofluoric acid are mixed at a volume ratio of 25:(5-12):(1-6). An etching solution for CdTe crystal characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20746986A JPS6362237A (en) | 1986-09-02 | 1986-09-02 | Etching liquid for cdte crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20746986A JPS6362237A (en) | 1986-09-02 | 1986-09-02 | Etching liquid for cdte crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6362237A true JPS6362237A (en) | 1988-03-18 |
Family
ID=16540279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20746986A Pending JPS6362237A (en) | 1986-09-02 | 1986-09-02 | Etching liquid for cdte crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6362237A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5780874A (en) * | 1992-08-21 | 1998-07-14 | Fujitsu Limited | Process for forming fluorinated resin or amorphous carbon layer and devices containing same |
-
1986
- 1986-09-02 JP JP20746986A patent/JPS6362237A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5780874A (en) * | 1992-08-21 | 1998-07-14 | Fujitsu Limited | Process for forming fluorinated resin or amorphous carbon layer and devices containing same |
| US6048786A (en) * | 1992-08-21 | 2000-04-11 | Fujitsu Limited | Process for forming fluorinated resin or amorphous carbon layer and devices containing same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4100014A (en) | Etching agent for III/V semiconductors | |
| JPS6362237A (en) | Etching liquid for cdte crystal | |
| Spitzer et al. | Site Transfer of si in GaAs | |
| JP2894717B2 (en) | Low surface tension sulfuric acid composition | |
| JPH1167742A (en) | Etching solution for semiconductor substrate and etching | |
| JP2626715B2 (en) | Etching solution for CdTe crystal | |
| CN109355711A (en) | A kind of flocking additive and its application for Buddha's warrior attendant wire cutting polysilicon chip | |
| SU577589A1 (en) | Polishing etch for monocrystals of mercury-cadmium-tellurium triple solid solutions | |
| JPS5423467A (en) | Singlecrystal growing method for binary semiconductor | |
| JP2503130B2 (en) | Liquid phase growth method | |
| JPH0653201A (en) | Surface formation method of compound semiconductor substrate | |
| RU2279154C1 (en) | Method for chemical etching of cadmium telluride | |
| Weyher et al. | Structure of VLS silicon crystals grown with platinum and gold | |
| SU815023A1 (en) | Solution for elucidating dislocations in titanium | |
| JPH0255939B2 (en) | ||
| Haller et al. | Not to be taken from this room | |
| Haller et al. | A DISLOCATION ETCH FOR 1, 1, 3 PLANES IN GERMANIUM | |
| HOLLAN et al. | Study on the electrochemical behavior of III-V semiconductors[Final Report] | |
| JPS5432182A (en) | Epitaxial growing method in liquid phase | |
| KIKUCHI | Study of phase diagrams of ternary semiconductors[Final Report, 20 Apr. 1980- 19 Jul. 1983] | |
| JPS57200293A (en) | Selecting method of crystal lot | |
| Tomashik et al. | Etching behavior of undoped and doped CdTe in aqueous H 2 O 2-HBr-ethylene glycol mixtures | |
| Duncan et al. | Investigation of growth phases of chemical bath deposited CdS thin films | |
| JPS566493A (en) | Manufacture of semiconductor laser element | |
| Kiszkurno | Polishing of a GaAs sample with perhydrol alkaline mixture |