JPS6362127A - Impregnation type cathode and its manufacture - Google Patents
Impregnation type cathode and its manufactureInfo
- Publication number
- JPS6362127A JPS6362127A JP61205986A JP20598686A JPS6362127A JP S6362127 A JPS6362127 A JP S6362127A JP 61205986 A JP61205986 A JP 61205986A JP 20598686 A JP20598686 A JP 20598686A JP S6362127 A JPS6362127 A JP S6362127A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- impregnated
- electron emission
- electron
- cup
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000005470 impregnation Methods 0.000 title abstract 2
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 238000003466 welding Methods 0.000 claims abstract description 16
- 239000000126 substance Substances 0.000 claims description 24
- 238000002844 melting Methods 0.000 claims description 20
- 230000008018 melting Effects 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 22
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052721 tungsten Inorganic materials 0.000 abstract description 6
- 239000010937 tungsten Substances 0.000 abstract description 6
- 230000008016 vaporization Effects 0.000 abstract description 3
- 238000009834 vaporization Methods 0.000 abstract description 3
- 229910052715 tantalum Inorganic materials 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 150000004645 aluminates Chemical class 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 206010067482 No adverse event Diseases 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/04—Manufacture of electrodes or electrode systems of thermionic cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/13—Solid thermionic cathodes
- H01J1/20—Cathodes heated indirectly by an electric current; Cathodes heated by electron or ion bombardment
- H01J1/28—Dispenser-type cathodes, e.g. L-cathode
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Solid Thermionic Cathode (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は高電流密度カソードとして電子管等に用いられ
る含浸形カソードおよびその製造方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an impregnated cathode used as a high current density cathode in electron tubes and the like, and a method for manufacturing the same.
高電流密度カソードとして使用される含浸形カソードは
、Ｂ＆Ｃ！Ｌアルミネート等の電子放出物質が含浸され
たタングステンＷ、モリブデン（Ｍｏ）等の高融点金属
の多孔質からなるカソード基体と、タンタル（Ｔａ）
、 Ｍｅ等の高融点金属からなるカップと、Ｔａまたは
ＭＯ等の高融点金属からなるカソードスリーブとを具備
する。そして、カソード基体をカップに装着し、このカ
ソード基体の装着されたカップをカソードスリーブの頂
部に挿入し、カソードスリーブ側方からレーザ光を照射
してカソードスリーブ、カップ、カソード基体を溶接固
着して形成される。Impregnated cathodes used as high current density cathodes are B&C! A cathode substrate made of a porous material made of a high melting point metal such as tungsten W or molybdenum (Mo) impregnated with an electron-emitting substance such as L aluminate, and tantalum (Ta).
, a cup made of a high melting point metal such as Me, and a cathode sleeve made of a high melting point metal such as Ta or MO. Then, the cathode base is attached to the cup, the cup with the cathode base attached is inserted into the top of the cathode sleeve, and a laser beam is irradiated from the side of the cathode sleeve to weld and secure the cathode sleeve, cup, and cathode base. It is formed.
ところで、カソード基体は融点が３３７０℃のＷで形成
され、カップ及びカソードスリーブは融点が２９４０℃
のＴａまたは融点が２６１７℃のＭ、で形成されている
ため、これらを溶接するには少なくとも一方の金属の融
点以上に溶接部を加熱する必要がある。しかし、カソー
ド基体には電子放出物質が含浸されていてこの電子放出
物質は融点が１７００℃程度であるので、溶接時にこの
電子放出物質が溶融、蒸発して溶接部に穴があくことが
あるという問題点があった。By the way, the cathode base is made of W with a melting point of 3370°C, and the cup and cathode sleeve are made of W with a melting point of 2940°C.
Since the metal is made of Ta with a melting point of 2617° C. or M with a melting point of 2617° C., in order to weld these, it is necessary to heat the welding part to a temperature higher than the melting point of at least one of the metals. However, since the cathode substrate is impregnated with an electron-emitting substance and the melting point of this electron-emitting substance is approximately 1,700°C, this electron-emitting substance may melt and evaporate during welding, causing holes in the weld. There was a problem.
このような含浸形カンードを電子管に組み込み寿命試験
を行なったところ、カットオフ電圧が大幅に変化してし
まう現象がみられた。またこの電子管を分解調査したと
ころ、カソード基体がわずかな力でカップ及びスリーブ
から脱落してしまうことが判った。When such an impregnated cand was incorporated into an electron tube and subjected to a life test, a phenomenon in which the cutoff voltage changed significantly was observed. Further, when this electron tube was disassembled and investigated, it was found that the cathode base fell off from the cup and sleeve with a slight force.
このような問題点に対処するために、例えば特開昭５９
−１０８２３号公報に示すようにカソード基体とカップ
の間に溶接材を介在させたり、また特開昭５９−１１１
２２２号公報に示すようにカソード基体の側壁部に凹部
を形成し、この凹部に対応するカップ及びカン−トスリ
ーブの部分にレーザ光を照射し溶融させて得られるカッ
プ及びカソードスリーブの突出部と凹部の固着によりカ
ソード基体を固定する方法等が提案されている。In order to deal with such problems, for example,
As shown in Japanese Patent Publication No. 10823, a welding material is interposed between the cathode substrate and the cup, and
As shown in Japanese Patent Application No. 222, a concave portion is formed in the side wall of a cathode base body, and a portion of the cup and cant sleeve corresponding to the concave portion is irradiated with a laser beam to melt the protruding portion and concave portion of the cup and cathode sleeve. A method of fixing the cathode substrate by fixing the cathode substrate has been proposed.
これらの方法は、いずれにおいても電子放射物質が含浸
された多孔性Ｗよ）なるカソード基体とカップ及びカソ
ードスリーブを直接溶接することは困難であるので、そ
の改善案を提供するものであるが、これらの方法によっ
ても強固に固着することができなかった。In any of these methods, it is difficult to directly weld the cup and cathode sleeve to the cathode substrate made of porous W impregnated with an electron-emitting substance, so they provide an improvement plan. Even with these methods, firm adhesion could not be achieved.
本発明は前述した従来の問題に鑑みてなされたものであ
夛、その目的はカソード基体、カップおよびスリーブを
強固に溶接固着することができる含浸形カソードおよび
その製造方法を提供することにある。The present invention has been made in view of the above-mentioned conventional problems, and an object thereof is to provide an impregnated cathode in which a cathode base, a cup, and a sleeve can be firmly fixed by welding, and a method for manufacturing the same.
本発明による含浸形カンードは、高融点金属の多孔質焼
結体に電子放出物質を含浸させたカソード基体の、少な
くとも溶接が行なわれる部分の最表面層に電子放出物質
が存在しない構成としたものである。The impregnated cand according to the present invention has a cathode substrate in which a porous sintered body of a high-melting point metal is impregnated with an electron-emitting substance, and the electron-emitting substance is not present in at least the outermost surface layer of the part where welding is performed. It is.
本発明による含浸形カソードの製造方法は、カソード基
体の溶接に先立ってカソード基体を電子放出物質が溶解
する液体中で洗浄することによ）最表面層の電子放出物
質を除去したものである。In the method for manufacturing an impregnated cathode according to the present invention, the electron emitting substance in the outermost layer is removed by washing the cathode substrate in a liquid in which the electron emitting substance is dissolved prior to welding the cathode substrate.
本発明においては、カソード基体の溶接が行なわれる部
分に電子放出物質が存在しないので、溶接時の電子放出
物質の気化が発生しなくなる。In the present invention, since no electron-emitting substance is present in the part of the cathode substrate to be welded, vaporization of the electron-emitting substance does not occur during welding.
以下、図面を用いて本発明の実施例を詳細に説明する。 Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図は本発明による含浸形カソードの一実施例を示す
図で同図（ａ）は縦断面図、同図（ｂ）は同図（ａ）の
Ａ −Ａ’断面図である。同図において、１は高融点金
属として例えばタングステンの多孔質焼結体に電子放出
物質を含浸させたほぼペレット状のカソード基体であシ
、このカソード基体１の電子放出面を除く最表面層には
深さ２０〜５０ノ１ｍにわたって電子放出物質が含浸さ
れていないタングステン多孔質部１ａが一体的に形成さ
れている。２はこのカソード基体１を収容する高融点金
属として例えばタンタル製のカップ（以下カップと称す
る）、３はこのカップ２を上部に支持固定するタンタル
製カソードスリーブ（以下スリーブと称する）、４はカ
ソード基体１とカップ２とスリーブ３とを一体的に固定
するレーザ光５の照射により溶接固着された溶接部、６
はスリーブ３内に配置されてカソード基体１を加熱して
電子放出を行なうヒータである。FIG. 1 shows an embodiment of an impregnated cathode according to the present invention, in which (a) is a longitudinal cross-sectional view, and (b) is a cross-sectional view taken along line A-A' in (a). In the figure, reference numeral 1 denotes a nearly pellet-shaped cathode substrate made of a porous sintered body of high melting point metal such as tungsten impregnated with an electron-emitting substance. A tungsten porous portion 1a which is not impregnated with an electron emitting material is integrally formed over a depth of 20 to 50 m. 2 is a cup made of tantalum (hereinafter referred to as a cup) as a high melting point metal that houses the cathode base 1; 3 is a tantalum cathode sleeve (hereinafter referred to as a sleeve) that supports and fixes the cup 2 on the upper part; 4 is a cathode. A welded portion 6 which is welded and fixed by irradiation with a laser beam 5 that integrally fixes the base 1, cup 2, and sleeve 3;
A heater is disposed within the sleeve 3 and heats the cathode base 1 to emit electrons.
このように構成される含浸形カソードの製造方法につい
て説明する。A method of manufacturing the impregnated cathode constructed as described above will be explained.
まず、タングステン粉末をプレス成形した多孔質基体を
還元性界−気中で焼結し、この多孔質基体内にバリウム
、カルシウムおよびアルミネート等の電子放出物質を含
浸させて所定の大きさの基体素子を形成する。次にこの
基体素子を純水を収容した容器に浸漬し、一定温度（約
２０℃）で超音波を加えることによシ一定時間（約１０
分間）の電子放出物質の除去を行なった後、水分をアル
コール等の有機溶剤で取９除き、次いで水素雰囲気中で
加熱処理を行なう。次に所定の面例えば側面を除いた上
下面を研磨してカソード基体１を形成する。この結果、
第１図に示したようにカソード基体１の電子放出面を除
く最表面層（約２０〜５０μｍ）の電子放出物質が除去
され、タングステン多孔質部１ａが形成される。次にこ
のように形成されたカソード基体１をカップ２に収容し
、さらにこのカップ２をスリーブ３に組立て、溶接部４
にレーザ光５を照射して溶接固着を行なって含浸形カン
ードを製作する。First, a porous base formed by press-molding tungsten powder is sintered in a reducing field and air, and an electron-emitting substance such as barium, calcium, and aluminate is impregnated into the porous base to form a base of a predetermined size. Form an element. Next, this base element is immersed in a container containing pure water, and ultrasonic waves are applied at a constant temperature (approximately 20°C) for a fixed period of time (approximately 10°C).
After removing the electron-emitting substance for 9 minutes), water is removed with an organic solvent such as alcohol, and then heat treatment is performed in a hydrogen atmosphere. Next, the cathode substrate 1 is formed by polishing predetermined surfaces, such as the upper and lower surfaces excluding the side surfaces. As a result,
As shown in FIG. 1, the electron emitting material in the outermost layer (approximately 20 to 50 μm) of the cathode substrate 1 excluding the electron emitting surface is removed to form a tungsten porous portion 1a. Next, the cathode base 1 thus formed is housed in the cup 2, and the cup 2 is further assembled to the sleeve 3, and the welded part 4
The impregnated cand is manufactured by irradiating it with a laser beam 5 and welding and fixing it.
このようにして製作された含浸形カソードは、溶接部４
を例えば走査形電子顕微鏡を用いて観察した結果、第２
図に示すようなレーザ光５の照射によシミ子放出物質が
激しく気化しこの圧力で溶接部４に穴７があく現象を確
実に防止することができた。また、第１図に示した溶接
部４は断面観察でも固着が良好で強固となっていること
が明らかとなった。また、この含浸形カンードをブラウ
ン管に実装してエミッション特性を評価した結果、悪影
響が全く生じていないことが確認された。The impregnated cathode manufactured in this way has a welded part 4
For example, as a result of observing using a scanning electron microscope, the second
As shown in the figure, the stain-emitting substance was violently vaporized by the irradiation with the laser beam 5, and this pressure could reliably prevent the formation of a hole 7 in the welded portion 4. Furthermore, cross-sectional observation of the welded portion 4 shown in FIG. 1 revealed that it was well-fixed and strong. Furthermore, as a result of mounting this impregnated cand on a cathode ray tube and evaluating its emission characteristics, it was confirmed that no adverse effects were caused at all.
なお、前述した実施例において、カソード基体の最表面
層の電子放出物質の除去方法としては、純水中における
超音波照射方法を用いたが、例えば酢酸などの酸類を含
む溶液中で除去する方法を用いても良く、エミッション
特性に悪影響を与えない方法であればいずれの除去方法
を用いても良い。In the above-mentioned examples, the electron-emitting substance on the outermost surface layer of the cathode substrate was removed by ultrasonic irradiation in pure water, but it is also possible to remove it in a solution containing an acid such as acetic acid. Any removal method may be used as long as it does not adversely affect the emission characteristics.
また、前述した実施例においては、カソード基体とカッ
プとスリーブとを３者一体で溶接固着した場合について
説明したが、本発明はこれに限定されるものでは々く、
カソード基体とカップとを、もしくはカソード基体とス
リーブとを２者一体で溶接固着して構成される含浸形カ
ソードに適用しても前述と全く同様の効果が得られるこ
とは勿論である。Further, in the above-mentioned embodiment, a case was explained in which the cathode base, the cup, and the sleeve were welded together, but the present invention is not limited to this.
Of course, the same effect as described above can be obtained even when the present invention is applied to an impregnated cathode constructed by welding and fixing the cathode base and the cup or the cathode base and the sleeve together.
以上説明したように本発明によれば、高融点金属の多孔
質焼結体に電子放出物質を含浸させたカソード基体の少
なくとも溶接が行なわれる部分の最表面層に電子放出物
質が存在しない構成としたことによって、溶接時にカソ
ード基体の電子放出物質の溶融、蒸発による穴あきが生
じ々くなるので、カソード基体が高融点金属支持体に強
固に固着され、高品位の含浸形カンードが得られる。ま
た、カソード基体と高融点金属支持体とを溶接固着する
に先立って基体素子を、電子放出物質が溶解する液体中
で洗浄することＫよシ、最表面層に電子放出物質が除去
されたカソード基体を簡単な方法で容易に得られるので
、高品位の含浸形カソードが生産性良く得られるなどの
極めて優れた効果が得られる。As explained above, according to the present invention, the cathode substrate, which is a porous sintered body of a high-melting point metal impregnated with an electron-emitting substance, has a structure in which no electron-emitting substance is present in at least the outermost surface layer of the part to be welded. As a result, holes are likely to occur during welding due to melting and evaporation of the electron-emitting material in the cathode substrate, so that the cathode substrate is firmly fixed to the high-melting point metal support, resulting in a high-quality impregnated cand. In addition, before welding and fixing the cathode substrate and the high-melting point metal support, it is recommended to wash the base element in a liquid in which the electron-emitting substance is dissolved, and to form a cathode in which the electron-emitting substance has been removed from the outermost layer. Since the substrate can be easily obtained by a simple method, extremely excellent effects such as high quality impregnated cathodes can be obtained with good productivity can be obtained.
第１図（ａ） 、 （ｂ）は本発明による含浸形カソー
ドの一実施例を示す縦断面図、Ａ−Ａ’断面図、第２図
（＆） 、 （ｂ）は従来の含浸形カソードの一例を示
す縦断面図、Ａ−Ａ’断面図である。
１・・・・・・カソード基体、 ｌａ・・・・・・タ
ングステン多ｌｊ部、 ２・・・・・・タンタル製カ
ップ（カップ）、３・・・・・・タンタル製カン−トス
リーブ（スリーブ）、４・・・・・・溶接部、 ５・
・・・・・レーザ光、 ６・・・・・・ヒータ、
７・・・・・・穴。FIGS. 1(a) and (b) are longitudinal sectional views and AA' cross-sectional views showing one embodiment of the impregnated cathode according to the present invention, and FIGS. It is a longitudinal cross-sectional view and AA' cross-sectional view which shows an example. 1... Cathode base, la... Tungsten polylj part, 2... Tantalum cup (cup), 3... Tantalum cant sleeve (sleeve) ), 4... welded part, 5.
...Laser light, 6...Heater,
7...hole.
Claims (1)
せたカソード基体と、前記カソード基体を支持固定する
高融点金属支持体とを備え、前記カソード基体の少なく
とも前記高融点金属支持体と溶接する部分の最表面層に
電子放出物質が存在しない部分を設けたことを特徴とす
る含浸形カソード。 ２、高融点金属の多孔質焼結体に電子放出物質を含浸さ
せたカソード基体と、前記カソード基体を支持固定する
高融点金属支持体とを溶接するに先立つて前記カソード
基体を、電子放出物質が溶解する液体中で洗浄すること
を特徴とした含浸形カソードの製造方法。[Scope of Claims] 1. A cathode base made of a porous sintered body of a high melting point metal impregnated with an electron emitting substance, and a high melting point metal support for supporting and fixing the cathode base; An impregnated cathode characterized in that a portion in which no electron emitting substance is present is provided in the outermost layer of the portion to be welded to the high melting point metal support. 2. Prior to welding the cathode base, which is a porous sintered body of high-melting point metal impregnated with an electron-emitting substance, and the high-melting-point metal support that supports and fixes the cathode base, the cathode base is impregnated with the electron-emitting substance. A method for manufacturing an impregnated cathode, characterized by cleaning in a liquid in which the cathode is dissolved.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20598686A JPH0821310B2 (en) | 1986-09-03 | 1986-09-03 | Impregnated type cathode and method for producing the same |
| KR1019870008597A KR910001398B1 (en) | 1986-09-03 | 1987-08-05 | Impregnated cathode and the manufacturing method of the same |
| US07/092,143 US4833361A (en) | 1986-09-03 | 1987-09-02 | Impregnated cathode having cathode base body and refractory metal support welded together |
| CN87106151.1A CN1005175B (en) | 1986-09-03 | 1987-09-02 | Dipping type cathode and its manufacturing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20598686A JPH0821310B2 (en) | 1986-09-03 | 1986-09-03 | Impregnated type cathode and method for producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6362127A true JPS6362127A (en) | 1988-03-18 |
| JPH0821310B2 JPH0821310B2 (en) | 1996-03-04 |
Family
ID=16516003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20598686A Expired - Fee Related JPH0821310B2 (en) | 1986-09-03 | 1986-09-03 | Impregnated type cathode and method for producing the same |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4833361A (en) |
| JP (1) | JPH0821310B2 (en) |
| KR (1) | KR910001398B1 (en) |
| CN (1) | CN1005175B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5418070A (en) * | 1988-04-28 | 1995-05-23 | Varian Associates, Inc. | Tri-layer impregnated cathode |
| KR920004900B1 (en) * | 1990-03-13 | 1992-06-22 | 삼성전관 주식회사 | Impregnated type cathode body and manufacturing the same |
| KR920008300B1 (en) * | 1990-09-22 | 1992-09-26 | 삼성전관 주식회사 | The method of manufacturing dispenser-type cathode |
| KR930009170B1 (en) * | 1991-10-24 | 1993-09-23 | 삼성전관 주식회사 | Method of making a dispenser-type cathode |
| JPH11339633A (en) * | 1997-11-04 | 1999-12-10 | Sony Corp | Impregnated cathode and manufacture therefor and electron gun and electronic tube |
| US20030025435A1 (en) * | 1999-11-24 | 2003-02-06 | Vancil Bernard K. | Reservoir dispenser cathode and method of manufacture |
| FR2803088B1 (en) * | 1999-12-22 | 2002-02-01 | Thomson Tubes & Displays | METHOD FOR ASSEMBLING A CATHODE FOR A CATHODE RAY TUBE |
| JP2002197964A (en) * | 2000-12-27 | 2002-07-12 | Sony Corp | Impregnated cathode structure and its manufacturing method |
| CN101297452A (en) * | 2005-09-14 | 2008-10-29 | 力特保险丝有限公司 | Gas-filled surge arrester, activating compound, ignition stripes and method therefore |
| CN103050354A (en) * | 2011-10-17 | 2013-04-17 | 中国科学院电子学研究所 | Storage film-coating dipped barium-tungsten cathode and preparation method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61142626A (en) * | 1984-12-14 | 1986-06-30 | Toshiba Corp | Impregnated cathode |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2188771B (en) * | 1986-04-01 | 1990-12-19 | Ceradyne Inc | Dispenser cathode and method of manufacture therefor |
-
1986
- 1986-09-03 JP JP20598686A patent/JPH0821310B2/en not_active Expired - Fee Related
-
1987
- 1987-08-05 KR KR1019870008597A patent/KR910001398B1/en not_active IP Right Cessation
- 1987-09-02 CN CN87106151.1A patent/CN1005175B/en not_active Expired
- 1987-09-02 US US07/092,143 patent/US4833361A/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61142626A (en) * | 1984-12-14 | 1986-06-30 | Toshiba Corp | Impregnated cathode |
Also Published As
| Publication number | Publication date |
|---|---|
| US4833361A (en) | 1989-05-23 |
| JPH0821310B2 (en) | 1996-03-04 |
| KR880004523A (en) | 1988-06-07 |
| CN87106151A (en) | 1988-03-16 |
| CN1005175B (en) | 1989-09-13 |
| KR910001398B1 (en) | 1991-03-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |