JPS6360190A - Device for pulling up single crystal - Google Patents
Device for pulling up single crystalInfo
- Publication number
- JPS6360190A JPS6360190A JP20452486A JP20452486A JPS6360190A JP S6360190 A JPS6360190 A JP S6360190A JP 20452486 A JP20452486 A JP 20452486A JP 20452486 A JP20452486 A JP 20452486A JP S6360190 A JPS6360190 A JP S6360190A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- single crystal
- seed crystal
- melt
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 73
- 238000010438 heat treatment Methods 0.000 claims abstract description 29
- 239000000155 melt Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 6
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 241000283973 Oryctolagus cuniculus Species 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明け、溶融体から半導体、金属、酸化物、光学結
晶等の単結晶を回転引上法（チョクラルスキー法）によ
って形成する単結晶引上装置に関するものである＠
〔従来の技術〕
回転引上げ法による単結晶の育成は、高品質で大型の単
結晶を製造する方法として広く採用されている。第２図
は例えば特公昭６１−２９９１４号公報に示された単結
晶引上装置を示すもので、（３）はるつぼ、（’ｙｂ）
はるつは（３）に収納されな溶融体、■けるつは（３）
と所定の間隔をあけて軸方向に配置された軸、υは溶融
体（１＆）と対向して軸Ｉに取付けられな種結晶である
。[Detailed Description of the Invention] [Industrial Application Field] This invention provides a single crystal of semiconductors, metals, oxides, optical crystals, etc., which is formed from a melt by a rotational pulling method (Czochralski method). Related to Pulling Apparatus @ [Prior Art] Growing single crystals by the rotational pulling method is widely adopted as a method for producing high-quality, large-sized single crystals. Fig. 2 shows a single crystal pulling apparatus disclosed in, for example, Japanese Patent Publication No. 61-29914, in which (3) a crucible, ('yb)
The molten body stored in Haruha (3), ■Keruha (3)
and an axis axially disposed at a predetermined distance, υ is a seed crystal attached to axis I facing the melt (1&).
このような単結晶引上装置においては、種結晶（２）に
は所望される結晶、例えば半導体、金属、酸化物等を用
い、溶融体（）ａ）には上記結晶を得るための被溶融材
（７）を溶融したものがるつぼ（３）に注湯される。図
示のように、るつぼ（３）に溶融体（Ｆ、）を収納し、
種結晶■が溶融体（）ａ）と接触するように軸αηを下
降し、軸０を回転させながら上昇させると、種結晶■と
溶融体（）１）との固液界面（至）で結晶（）ｂ）が育
成され、時間の経過とともに図示のように結晶が成長す
る。In such a single crystal pulling apparatus, a desired crystal such as a semiconductor, a metal, an oxide, etc. is used as the seed crystal (2), and a material to be melted to obtain the crystal is used as the melt (a). The melted material (7) is poured into the crucible (3). As shown in the figure, the melt (F,) is stored in the crucible (3),
When the axis αη is lowered so that the seed crystal ■ comes into contact with the melt (a), and the axis 0 is raised while rotating, at the solid-liquid interface (to) between the seed crystal ■ and the melt (a), Crystal ()b) is grown, and the crystal grows as shown in the figure over time.
従来の単結晶引上装置は以上のように構成されているの
で、結晶化された部分の温度分布が不均一となるので、
結晶が育成されるときに熱応力が生じ単結晶の品質が低
下する。このため、結晶を結晶の融点近くまで加熱しそ
の後徐冷する熱処理が必要であるという問題点があった
。Since the conventional single crystal pulling apparatus is configured as described above, the temperature distribution in the crystallized part becomes uneven.
When a crystal is grown, thermal stress occurs and the quality of the single crystal deteriorates. For this reason, there was a problem in that a heat treatment was required to heat the crystal to near the melting point of the crystal and then slowly cool it.
この発明は上記のような問題点を解消するためになされ
たもので、熱処理を省略し高品質の結晶の育成が可能な
単結晶引上装置を得ることを目的とする。The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a single-crystal pulling apparatus that can omit heat treatment and grow high-quality crystals.
この発明に係る単結晶引上装置は、引上げた単結晶を所
定の温度に加熱する加熱装置を設けたものである。The single crystal pulling apparatus according to the present invention is provided with a heating device that heats the pulled single crystal to a predetermined temperature.
この発明における単結晶引上装置は、引上げた単結晶を
所定の温度に加熱し、徐冷する熱処理を行う。The single crystal pulling apparatus according to the present invention performs a heat treatment of heating the pulled single crystal to a predetermined temperature and slowly cooling it.
以下、この発明の一実施例を図について説明する。第１
図において、（１）は基台、（２）は基台（１）上に設
置された台、（３）け台（２）に収納され念るつぼ、（
４）けろつは（３）を囲繞台（２）に埋設された発熱体
、（５）け発熱体（４）に供給する電力を制御する制御
装置、（６）はるつは（３）の温度を検出する温度検出
器で、検出した温度信号を制御装置（５）へ送るように
接続されている。（７）けるつホ（３）に収納され之所
定の金属、（８）は基台（１）と垂直に設けられた支柱
、（９）は支柱（８）に取付けられた昇降装置で、支柱
（８）の長手方向に移動できるように構成されている。An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, (1) is the base, (2) is the stand installed on the base (1), (3) is the crucible stored in the stand (2), (
4) A heating element embedded in the stand (2) surrounding Keroha (3), (5) a control device that controls the power supplied to the heating element (4), (6) Haruha (3) This is a temperature detector that detects the temperature of the controller, and is connected to send the detected temperature signal to the control device (5). (7) A predetermined metal stored in the kickbox (3), (8) a support provided perpendicular to the base (1), (9) a lifting device attached to the support (8), It is configured to be movable in the longitudinal direction of the support column (8).
α０は昇降装置（９）の所定の位置に設けられた回転装
置、αＤは回転装置αＧに取付けられた軸、■け釉αｐ
がろつば（３）と対向した端部に取付けられた種結晶、
（至）は温度検出器（６）と制御装置（５）との接続線
、α４は発熱体（４）と制御装置（５）との接続線、卯
は結晶υ及び（）ｂ）と溶融体（ハ）とが接触した固液
界面、ωは引上げられた単結晶（ｙｂ）を所定の間隔を
あけて所定の長さ囲繞できるように配置された発熱体、
αηは単結晶（ｙｂ）の温度を測定する温度検出器、（
至）は第２の制御装置で、温度検出器側が検出信号を受
けて発熱体υに供給する電力を所定の値に制御するよう
に構成されている。上記（４）〜（ａ） 、 （Ｌｌ（
１４）で被溶融材（７）を溶融する第１の加熱装置■を
構成し、上記（至）〜（至）で成長した結晶（ツｂ）を
加熱する第２の加熱装置−が構成される。α0 is a rotating device installed at a predetermined position of the lifting device (9), αD is a shaft attached to the rotating device αG,
a seed crystal attached to the end opposite Garotsuba (3);
(to) is the connection line between the temperature detector (6) and the control device (5), α4 is the connection line between the heating element (4) and the control device (5), and the rabbit is the crystal υ and () b) and melting ω is a heating element arranged so as to surround the pulled single crystal (yb) for a predetermined length at a predetermined interval;
αη is a temperature detector that measures the temperature of the single crystal (yb), (
(to) is a second control device, which is configured such that the temperature detector side receives a detection signal and controls the power supplied to the heating element υ to a predetermined value. Above (4) to (a), (Ll(
14) constitutes a first heating device (2) for melting the material to be melted (7), and a second heating device (2) for heating the crystal (Tb) grown in steps (to) to (to) above is constituted. Ru.
つぎに動作につ−て説明する。制御装置（５）の始動に
よって発熱体（４）が駆動されるっｐｔ（３）が加熱さ
れる。このるっホ（３）の温度が温度検出器（６）で測
定され温度信号が制御装置Ｃ５）へ入力され、ろつは（
３）に収納された被溶融材（７）を溶融して溶融体（１
＆）とした後は、溶融体（１＆）を所定の温度で維持す
るように制御される。被溶融材（７）が溶融体（）１）
化すると、昇降装置（９）を降下させて種結晶υを溶融
体（）ａ）と接触させ、回転装置αＯを始動させる＠こ
れによって、種結晶υけ溶融体（）＆）と接触し念状態
で回転するので、種結晶口を回転させながら昇降装置（
９）を所定の速度で上昇させると、溶融体（）＆）と種
結晶（至）とが接触し企画液界面（至）に単結晶（）ｂ
）が育成され、種結晶（２）の上昇に伴って単結晶（）
ｂ）が成長する。この単結晶（）ｂ）が育成され成長す
る過程で、制御装置（至）を始動させると、発熱体面が
駆動され単結晶（）ｂ）が加熱される。この発熱体ωに
よる単結晶（）１１１）の加熱温度は、例えば単結晶（
）ｂ）の融点より低い所定の温度に設定すると、温度検
出器（ロ）が測定した単結晶（ツｂ）の周囲温度が温度
信号として制御装置（至）に入力され、制御装置（至）
は温度信号に応じて発熱体錦を駆動するように制御され
る。Next, the operation will be explained. When the control device (5) is started, the heating element (4) is driven and the heating element (3) is heated. The temperature of this Ruho (3) is measured by the temperature detector (6) and the temperature signal is input to the control device C5),
The material to be melted (7) stored in 3) is melted to form a molten body (1).
&), the melt (1&) is controlled to be maintained at a predetermined temperature. The material to be melted (7) is the melted body ()1)
, the lifting device (9) is lowered to bring the seed crystal υ into contact with the melt () a), and the rotating device αO is started. Since it rotates in the state, the lifting device (
9) is raised at a predetermined speed, the melt ()&) and the seed crystal (to) come into contact and a single crystal ()b is formed at the planning liquid interface (to).
) is grown, and as the seed crystal (2) rises, a single crystal ()
b) grows. When the control device (to) is started in the process of growing this single crystal ()b), the heating element surface is driven and the single crystal ()b) is heated. The heating temperature of the single crystal ( ) 111) by this heating element ω is, for example,
) When the temperature is set to a predetermined temperature lower than the melting point of b), the ambient temperature of the single crystal (b) measured by the temperature detector (b) is input as a temperature signal to the control device (to).
is controlled to drive the heating element in accordance with the temperature signal.
単結晶（？ｂ）の成長が所定の値になると、種結晶υす
なわち軸ａＤの引上げ速度が大きくなるように昇降装置
（９）を動作させるとともに、第２の加熱装置のを停止
させる。これによって、単結晶（）ｂ）が加熱温度から
徐々に温度が下がる徐冷が行われる。When the growth of the single crystal (?b) reaches a predetermined value, the lifting device (9) is operated to increase the pulling speed of the seed crystal υ, that is, the axis aD, and the second heating device is stopped. As a result, slow cooling is performed in which the temperature of the single crystal () b) is gradually lowered from the heating temperature.
上記実施例においては、溶融体に対して種結晶を回転さ
せる場合について説明し念が、溶融体が種結晶に対して
回転する場合でも上記実施例と同様の動作を期待できる
◎
〔発明の効果〕
以上のようにこの発明によれば、単結晶を育成し成長さ
せる過程で単結晶を所定の温度で熱処理するので、単結
晶の品質を向上することができる。In the above embodiment, the case where the seed crystal is rotated with respect to the molten body is explained, but even when the molten body is rotated with respect to the seed crystal, the same operation as in the above embodiment can be expected. ] As described above, according to the present invention, since the single crystal is heat-treated at a predetermined temperature during the process of growing and growing the single crystal, the quality of the single crystal can be improved.
第１図はこの発明の一実施例による単結晶引上装置の正
面図、第２図は従来のものを示す正面図である。
図において、（７）は被溶融材、（−／−）は溶融体、
（）ｂ）ｈ単結晶、■け穂結晶、（至）は固液界面、（
財）は第１の加熱装置、の＃′ｉ第２の加熱装置である
。
なお、各図中、同一符号は同−又は相当部分を示す。FIG. 1 is a front view of a single crystal pulling apparatus according to an embodiment of the present invention, and FIG. 2 is a front view of a conventional apparatus. In the figure, (7) is the material to be melted, (-/-) is the molten body,
() b) h single crystal, ■ Keho crystal, (to) solid-liquid interface, (
item) is the first heating device, and #'i is the second heating device. In each figure, the same reference numerals indicate the same or corresponding parts.
Claims (1)
、上記溶融体と上記種結晶との何れか一方を回転させな
がら上記溶融体と上記種結晶とが開離する方向に動作さ
せて上記溶融体と上記種結晶との固液界面で単結晶を育
成し成長させるものにおいて、上記育成した単結晶を加
熱する加熱装置を設けたことを特徴とする単結晶引上装
置。(1) A molten body made by melting the material to be melted and a seed crystal are brought into contact with each other, and while either the molten body or the seed crystal is rotated, the molten body and the seed crystal are moved in the direction of separation. A single crystal pulling apparatus for growing a single crystal at a solid-liquid interface between the melt and the seed crystal, characterized in that a heating device for heating the grown single crystal is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20452486A JPS6360190A (en) | 1986-08-29 | 1986-08-29 | Device for pulling up single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20452486A JPS6360190A (en) | 1986-08-29 | 1986-08-29 | Device for pulling up single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6360190A true JPS6360190A (en) | 1988-03-16 |
Family
ID=16491961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20452486A Pending JPS6360190A (en) | 1986-08-29 | 1986-08-29 | Device for pulling up single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6360190A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0393700A (en) * | 1989-09-04 | 1991-04-18 | Nippon Steel Corp | Heat treating method and device of silicon single crystal and production device thereof |
-
1986
- 1986-08-29 JP JP20452486A patent/JPS6360190A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0393700A (en) * | 1989-09-04 | 1991-04-18 | Nippon Steel Corp | Heat treating method and device of silicon single crystal and production device thereof |
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