JPS6358381B2 - - Google Patents

Info

Publication number
JPS6358381B2
JPS6358381B2 JP55077049A JP7704980A JPS6358381B2 JP S6358381 B2 JPS6358381 B2 JP S6358381B2 JP 55077049 A JP55077049 A JP 55077049A JP 7704980 A JP7704980 A JP 7704980A JP S6358381 B2 JPS6358381 B2 JP S6358381B2
Authority
JP
Japan
Prior art keywords
layer
conductivity type
semiconductor layer
diode
limiting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55077049A
Other languages
English (en)
Japanese (ja)
Other versions
JPS572580A (en
Inventor
Kunihiro Nakamura
Noboru Terao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7704980A priority Critical patent/JPS572580A/ja
Publication of JPS572580A publication Critical patent/JPS572580A/ja
Publication of JPS6358381B2 publication Critical patent/JPS6358381B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes

Landscapes

  • Bipolar Transistors (AREA)
JP7704980A 1980-06-05 1980-06-05 Semiconductor device Granted JPS572580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7704980A JPS572580A (en) 1980-06-05 1980-06-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7704980A JPS572580A (en) 1980-06-05 1980-06-05 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS572580A JPS572580A (en) 1982-01-07
JPS6358381B2 true JPS6358381B2 (en, 2012) 1988-11-15

Family

ID=13622917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7704980A Granted JPS572580A (en) 1980-06-05 1980-06-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS572580A (en, 2012)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010041302A1 (ja) * 2008-10-06 2010-04-15 株式会社 東芝 抵抗変化メモリ
CN107946349A (zh) * 2016-10-12 2018-04-20 重庆中科渝芯电子有限公司 一种带有外延调制区的半导体装置及其制造方法

Also Published As

Publication number Publication date
JPS572580A (en) 1982-01-07

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