JPS6357104B2 - - Google Patents
Info
- Publication number
- JPS6357104B2 JPS6357104B2 JP2851281A JP2851281A JPS6357104B2 JP S6357104 B2 JPS6357104 B2 JP S6357104B2 JP 2851281 A JP2851281 A JP 2851281A JP 2851281 A JP2851281 A JP 2851281A JP S6357104 B2 JPS6357104 B2 JP S6357104B2
- Authority
- JP
- Japan
- Prior art keywords
- ion source
- separation chamber
- electrode
- electron impact
- segments
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000926 separation method Methods 0.000 claims description 43
- 238000000605 extraction Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 description 82
- 238000004544 sputter deposition Methods 0.000 description 12
- 230000009977 dual effect Effects 0.000 description 8
- 239000002245 particle Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000005513 bias potential Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000003472 neutralizing effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 235000015842 Hesperis Nutrition 0.000 description 1
- 235000012633 Iberis amara Nutrition 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000013268 sustained release Methods 0.000 description 1
- 239000012730 sustained-release form Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/20—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12622580A | 1980-03-03 | 1980-03-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56136647A JPS56136647A (en) | 1981-10-26 |
| JPS6357104B2 true JPS6357104B2 (OSRAM) | 1988-11-10 |
Family
ID=22423688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2851281A Granted JPS56136647A (en) | 1980-03-03 | 1981-03-02 | Multiple filament ion source |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS56136647A (OSRAM) |
| CH (1) | CH650104A5 (OSRAM) |
| GB (1) | GB2070853B (OSRAM) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4847504A (en) * | 1983-08-15 | 1989-07-11 | Applied Materials, Inc. | Apparatus and methods for ion implantation |
| EP1675154A3 (en) * | 1999-12-13 | 2009-07-15 | SemEquip, Inc. | Ion implantation ion source |
| USD525412S1 (en) * | 2004-11-12 | 2006-07-25 | Henri-Lloyd Limited | T-shirt |
| US9401266B2 (en) | 2014-07-25 | 2016-07-26 | Bruker Daltonics, Inc. | Filament for mass spectrometric electron impact ion source |
| US11017974B2 (en) | 2016-11-11 | 2021-05-25 | Nissin Ion Equipment Co., Ltd. | Ion source |
-
1981
- 1981-02-26 GB GB8106094A patent/GB2070853B/en not_active Expired
- 1981-03-02 CH CH139581A patent/CH650104A5/de not_active IP Right Cessation
- 1981-03-02 JP JP2851281A patent/JPS56136647A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB2070853B (en) | 1984-01-18 |
| CH650104A5 (de) | 1985-06-28 |
| GB2070853A (en) | 1981-09-09 |
| JPS56136647A (en) | 1981-10-26 |
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