JPS6355455U - - Google Patents
Info
- Publication number
- JPS6355455U JPS6355455U JP14750386U JP14750386U JPS6355455U JP S6355455 U JPS6355455 U JP S6355455U JP 14750386 U JP14750386 U JP 14750386U JP 14750386 U JP14750386 U JP 14750386U JP S6355455 U JPS6355455 U JP S6355455U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- control device
- temperature control
- block
- constant temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000006096 absorbing agent Substances 0.000 claims 1
Landscapes
- Control Of Temperature (AREA)
Description
第１図はこの考案の半導体レーザ温度制御装置
の一実施例を示す正面図、第２図は中央縦断面図
、第３図は他の実施例を示す平面図、第４図は中
央縦断面図、第５図、および第６図は従来例を示
す中央縦断面図。
１…恒温ブロツク、２…半導体レーザ、４…ヒ
ートパイプ、５…発熱体。
Fig. 1 is a front view showing one embodiment of the semiconductor laser temperature control device of this invention, Fig. 2 is a central longitudinal sectional view, Fig. 3 is a plan view showing another embodiment, and Fig. 4 is a central longitudinal sectional view. FIG. 5, and FIG. 6 are central vertical sectional views showing a conventional example. 1... constant temperature block, 2... semiconductor laser, 4... heat pipe, 5... heating element.
Claims (1)
恒温ブロツクの所定位置に、上記半導体レーザを
包囲する状態でリング状のヒートパイプを設けた
ことを特徴とする半導体レーザ温度制御装置。 ２ 恒温ブロツクが、発熱体により熱を供給され
ているものである上記実用新案登録請求の範囲第
１項記載の半導体レーザ温度制御装置。 ３ 恒温ブロツクが、吸熱体により熱を吸収され
ているものである上記実用新案登録請求の範囲第
１項記載の半導体レーザ温度制御装置。 ４ 恒温ブロツクが、ヒートパイプの外方におい
て熱結合されているものである上記実用新案登録
請求の範囲第２項または第３項記載の半導体レー
ザ温度制御装置。 ５ 恒温ブロツクが、リング状のヒートパイプの
中心軸線方向において熱結合されているものであ
る上記実用新案登録請求の範囲第２項または第３
項記載の半導体レーザ温度制御装置。[Claims for Utility Model Registration] 1. A semiconductor characterized in that a ring-shaped heat pipe is provided at a predetermined position of a thermostatic block with good thermal conductivity that supports the semiconductor laser and surrounds the semiconductor laser. Laser temperature control device. 2. The semiconductor laser temperature control device according to claim 1, wherein the constant temperature block is supplied with heat by a heating element. 3. The semiconductor laser temperature control device according to claim 1, wherein the constant temperature block has heat absorbed by a heat absorber. 4. The semiconductor laser temperature control device according to claim 2 or 3, wherein the constant temperature block is thermally coupled to the outside of the heat pipe. 5. Claim 2 or 3 of the above utility model registration, wherein the constant temperature block is thermally coupled in the central axis direction of the ring-shaped heat pipe.
2. The semiconductor laser temperature control device described in .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14750386U JPH0453018Y2 (en) | 1986-09-25 | 1986-09-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14750386U JPH0453018Y2 (en) | 1986-09-25 | 1986-09-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6355455U true JPS6355455U (en) | 1988-04-13 |
| JPH0453018Y2 JPH0453018Y2 (en) | 1992-12-14 |
Family
ID=31060924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14750386U Expired JPH0453018Y2 (en) | 1986-09-25 | 1986-09-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0453018Y2 (en) |
-
1986
- 1986-09-25 JP JP14750386U patent/JPH0453018Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0453018Y2 (en) | 1992-12-14 |