JPS6355404A - Resistor for strain meter - Google Patents
Resistor for strain meterInfo
- Publication number
- JPS6355404A JPS6355404A JP19811786A JP19811786A JPS6355404A JP S6355404 A JPS6355404 A JP S6355404A JP 19811786 A JP19811786 A JP 19811786A JP 19811786 A JP19811786 A JP 19811786A JP S6355404 A JPS6355404 A JP S6355404A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- substrate
- strain
- magnetic field
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 238000007747 plating Methods 0.000 claims abstract description 13
- 238000009713 electroplating Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 10
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 7
- 229910052802 copper Inorganic materials 0.000 claims abstract description 5
- 229910052737 gold Inorganic materials 0.000 claims abstract description 5
- 229910052804 chromium Inorganic materials 0.000 claims abstract 4
- 229910052742 iron Inorganic materials 0.000 claims abstract 4
- 229910052759 nickel Inorganic materials 0.000 claims abstract 4
- 239000000126 substance Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 abstract description 14
- 238000000151 deposition Methods 0.000 abstract description 7
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 239000004033 plastic Substances 0.000 abstract description 5
- 239000010409 thin film Substances 0.000 abstract description 4
- 150000002739 metals Chemical class 0.000 abstract 3
- 239000010408 film Substances 0.000 abstract 1
- 239000002985 plastic film Substances 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 239000013039 cover film Substances 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910001006 Constantan Inorganic materials 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、歪計用抵抗体に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a resistor for a strain meter.
従来公知の歪計用抵抗体は、基板とカバーフィルムとの
間に抵抗体を挟んでサンドインチに構成されており、曲
げ応力等の外力によって与えられる歪によりその電気抵
抗値が変、化することを利用して歪を計測するものであ
る。Conventionally known resistors for strain gauges are constructed in a sandwich structure with the resistor sandwiched between a substrate and a cover film, and its electrical resistance value changes due to strain caused by external forces such as bending stress. This is used to measure distortion.
然しながら、従来のこの種の曲げセンサ素子としての歪
計用抵抗体は、コンスタンタンなどの細線やその他公知
の金属抵抗体を用いるものであるが、その感度が低いた
め被測定物の微少範囲の歪を高精度に計測できないと云
う問題点があり、又、半導体製品は高感度ではあるが、
温度による特性変化等が大きく、弾性限界が低く、耐候
性が劣る等の問題点があった。However, conventional resistors for strain meters as bending sensor elements of this type use thin wires such as constantan or other known metal resistors, but their sensitivity is low and they are sensitive to strain in a minute range of the object to be measured. There is a problem that it is not possible to measure with high precision, and although semiconductor products are highly sensitive,
There were problems such as large changes in properties due to temperature, low elastic limit, and poor weather resistance.
本発明は、畝上の観点に立ってなされたものであって、
その目的とするところは、磁気的特性及び機械的特性に
優れ、歪を高感度に検知し得る歪計用抵抗体を提供する
ことにある。The present invention was made from the viewpoint of ridges, and
The purpose is to provide a resistor for a strain meter that has excellent magnetic and mechanical properties and can detect strain with high sensitivity.
而して、上記の目的は、Ｎｔｓ Ｃｒｓ Ｆｅｓ Ｃ０
５Ｃｕ−。Therefore, the above purpose is Nts Crs Fes C0
5Cu-.
Ａｕ５Ｐｔから成る群のなかか、ら選ばれた少なくとも
一種の金属を、磁界中で薄層状に析出させて成る歪計用
抵抗体とすることによって達成される。而して、本発明
を実施する際は、１ＫＧ以上の磁界内で電気メッキ法や
化学メッキ法により上記金属を析出させることが望まし
い。This is achieved by forming a resistor for a strain gauge by depositing at least one metal selected from the group consisting of Au5Pt in a thin layer in a magnetic field. Therefore, when carrying out the present invention, it is desirable to deposit the above-mentioned metal by electroplating or chemical plating in a magnetic field of 1 KG or more.
畝上の如く構成することにより、金属析出層の感度を従
来公知の金属製歪ゲージの数倍に高めることができるの
で歪を高精度に計測することができるようになる。By configuring it like a ridge, the sensitivity of the metal deposited layer can be increased several times that of conventionally known metal strain gauges, making it possible to measure strain with high precision.
以下、図面を参照しつ＼本発明の詳細を具体的に説明す
る。Hereinafter, details of the present invention will be specifically explained with reference to the drawings.
第１図は、本発明に係る歪計用抵抗体の一実施例を示す
側面断面図、第２図は、従来の歪計用抵抗体と、本発明
により得た歪計用抵抗体の歪率と電気抵抗変化率との関
係を対比して示すグラフ、第３図は、本発明の他の一実
施例により得た歪計用抵抗体の外力と電気抵抗との関係
を示すグラフである。FIG. 1 is a side cross-sectional view showing one embodiment of a resistor for strain gauges according to the present invention, and FIG. 2 shows a conventional resistor for strain gauges and a strain gauge resistor obtained according to the present invention. FIG. 3 is a graph showing the relationship between the external force and the electrical resistance of a resistor for a strain meter obtained according to another embodiment of the present invention. .
第１図中、１はプラスチックに導電処理を施しく３） た導電性プラスチック基板、２は電極、３はＬ−。In Figure 1, 1 is plastic treated with conductive treatment 3) conductive plastic substrate, 2 is an electrode, 3 is L-.
Ｃｒｓ Ｆｅ、 Ｃ０％ Ｃ１１％ ＡＬＩ％ Ｐｔか
ら・成る群のなかから選ばれた少なくとも一種の金属を
、磁界中で薄層状に析出させて成る抵抗体、４は上記抵
抗体３を絶縁するカバーフィルムである。A resistor made of at least one metal selected from the group consisting of Crs Fe, C0% C11% ALI% Pt, deposited in a thin layer in a magnetic field; 4 is a cover film insulating the resistor 3; It is.
導電性プラスチック基板１は、可撓性のある薄板状のプ
ラスチック板の表面に導電処理を施したものであり、こ
の導電処理はＮ１％ Ｃｒｓ Ｆｅｓ Ｃ０％ Ｃｕ、
Ａｕ、 Ｐｔ等の金属をその処理面に例えば電気メッキ
法により析出させて抵抗体３を得るために行なうもので
ある。The conductive plastic substrate 1 is a flexible thin plastic plate whose surface is subjected to conductive treatment, and this conductive treatment is made of N1% Crs Fes C0% Cu,
This is done in order to obtain the resistor 3 by depositing a metal such as Au or Pt on the treated surface by, for example, electroplating.
電極２は一対の端子を有するように基板１の表面に薄膜
状に蒸着するか、又は導電性薄膜層を基板１の表面に貼
り付けて構成している。The electrode 2 is formed by depositing a thin film on the surface of the substrate 1 or by pasting a conductive thin film layer on the surface of the substrate 1 so as to have a pair of terminals.
抵抗体３は、基板１の表面に予め所望の部分にマスキン
グを施した後に、常法による電気メッキ法によりＮ１％
Ｃｒｓ Ｆｅｓ Ｃｏ、Ｃｕｓ八へ、 Ｐｔから成る
群のなかから選ばれた少なくとも一種の金属を１ＫＧ〜
ｌ０ＫＧ好ましくは略３ＫＧの磁界内のメッキ浴槽内で
基板１及び電極２の表面に薄層状に析出させたものであ
る。The resistor 3 is made by masking desired areas on the surface of the substrate 1 in advance, and then applying 1% N1 by electroplating using a conventional method.
To Crs Fes Co, Cus 8, 1KG ~ of at least one metal selected from the group consisting of Pt.
A thin layer is deposited on the surfaces of the substrate 1 and the electrode 2 in a plating bath in a magnetic field of 10 KG, preferably about 3 KG.
又、抵抗体３を析出させる方法としては、常用の電気メ
ッキ法の他、化学メッキ法で行なってもよい。なお、そ
の際電極２を化学メッキによって形成される薄膜抵抗体
３に兼用させれば、電極２を省略することができ机
析出中の抵抗体３に磁界を与える装置としては、メッキ
浴槽にコイルを設け、コ慴ルに供給する直流電源と上記
電源電圧を調節自在とする苛変抵抗とスイッチとにより
回路を構成し、コイルに所望の電流を供給することによ
りメッキ浴槽内に１ＫＧ以上の磁界が発生するようにす
ればよい。Further, as a method for depositing the resistor 3, in addition to the commonly used electroplating method, a chemical plating method may be used. In this case, if the electrode 2 is also used as the thin film resistor 3 formed by chemical plating, the electrode 2 can be omitted.As a device for applying a magnetic field to the resistor 3 during metal deposition, a coil is placed in the plating bath. A circuit is constructed of a DC power supply to the coil, a variable resistor and a switch that can freely adjust the power supply voltage, and a magnetic field of 1 KG or more is created in the plating bath by supplying the desired current to the coil. All you have to do is make sure that it occurs.
カバーフィルム４は、一対の電極端子部分を除く基板１
及び抵抗体３の表面上を覆うように構成されており、抵
抗体３を絶縁被覆するものである。The cover film 4 covers the substrate 1 except for the pair of electrode terminals.
and is configured to cover the surface of the resistor 3, and provides an insulating coating for the resistor 3.
而して、抵抗体３は、常法による電気メッキ法と共に１
ＫＧ〜ｌ０ＫＧ好ましくは略３ＫＧめ磁界内でＮ１％Ｃ
ｒ５Ｆｅｓ Ｃ０％ Ｃｕ１Ａｕ、 ｐｔから成る群の
なかから選ばれた少な（とも一種の金属を基板１の表面
に薄層状に析出させたものであるから抵抗体３の材料が
磁性体の場合には、外力、歪のみでな（磁気的測定にも
卓効を有するものである。Therefore, the resistor 3 can be manufactured using conventional electroplating method and 1
N1%C in a magnetic field of KG to 10KG, preferably about 3KG
r5Fes C0% Cu1Au, a metal selected from the group consisting of pt is deposited in a thin layer on the surface of the substrate 1, so if the material of the resistor 3 is a magnetic material, It is extremely effective not only for external force and strain (it is also extremely effective for magnetic measurements).
而して、上記構成によるセンサを用いて、外力により与
えられる歪を計測する場合には、電極端子部分を保持し
て片持状態にして外力を作用させるものである。抵抗体
３には与えられた外力により歪が発生し、この時に抵抗
体３に生じる電気抵抗の変化を電極２及び図示しないリ
ード線を介して適宜の電気計器又はＡ／Ｄコンバータ等
に導き、これらによって歪の計測を行なうものである。When measuring strain caused by an external force using the sensor configured as described above, the electrode terminal portion is held in a cantilevered state and the external force is applied. Distortion occurs in the resistor 3 due to the applied external force, and the change in electrical resistance that occurs in the resistor 3 at this time is guided to an appropriate electric meter or A/D converter via the electrode 2 and a lead wire (not shown). These are used to measure distortion.
第２図は、ニクロム系合金を用い、従来の抵抗体により
計測した歪率と電気抵抗変化率の関係を示す曲線２１と
、本発明により、１ＫＧ、３ＫＧ及び１ＯＫＧの磁界内
でそれぞれ得た抵抗体により計測した歪率と電気抵抗変
化率の関係を示す曲線２２．２３及び２４とを示すグラ
フである。Fig. 2 shows a curve 21 showing the relationship between the strain rate and the electrical resistance change rate measured with a conventional resistor using a nichrome alloy, and the resistance obtained by the present invention in a magnetic field of 1KG, 3KG, and 1OKG, respectively. It is a graph showing curves 22, 23 and 24 showing the relationship between the strain rate measured by the body and the rate of change in electrical resistance.
又、これらの結果は表−１にも示されている。These results are also shown in Table-1.
表−１
増加に従って電気抵抗変化率が緩やかに増大し、その最
大歪に対しての電気抵抗変化率が０．１２％であった。Table 1 The rate of change in electrical resistance gradually increased as the strain increased, and the rate of change in electrical resistance with respect to the maximum strain was 0.12%.
これに対して、本発明により１ＫＧ乃至１０ＫＧの強磁
界内で得られた抵抗体により計測した結果の曲線２２．
２３及び２４は、歪率の増加に従って電気抵抗変化率が
大幅に増大し、従来に比してその最大歪に対しての電気
抵抗変化率が１ＫＧで約２倍、３ＫＧで約３倍及びｌ０
ＫＧで約６倍となった。In contrast, curve 22. is the result of measurement using a resistor obtained in a strong magnetic field of 1 KG to 10 KG according to the present invention.
23 and 24, the electrical resistance change rate increases significantly as the strain rate increases, and the electrical resistance change rate with respect to the maximum strain is about twice as much at 1 KG, about three times as much at 3 KG, and l0
KG has increased about 6 times.
次に、本発明に係る歪計用抵抗体を析出する他の方法に
就いて説明する。Next, another method for depositing a resistor for a strain gauge according to the present invention will be explained.
抵抗体は、前記第一実施例と同様に１）［Ｇ以上の磁界
内で、かつ塩化ニッケル液のメッキ液槽内で電気メッキ
を行ない、厚さ０．３〜１μの薄層状に析出させると共
に、Ａｒレーザを照射しつ＼矩形状にトリミングしたも
のである。The resistor is prepared in the same way as in the first embodiment: 1) Electroplating is performed in a magnetic field of G or more in a nickel chloride plating bath to deposit a thin layer with a thickness of 0.3 to 1 μm. It is also trimmed into a rectangular shape while irradiated with an Ar laser.
上記抵抗体は、ＮＣ制御装置等による制御によってレー
ザを照射しつ一行なうことによって任意の形状が正確か
つ高速度に成形される。The resistor is formed into an arbitrary shape accurately and at high speed by irradiating the resistor with a laser under control by an NC control device or the like.
第３図には、前記第一実施例の直流電源で得られた抵抗
体により計測した外力（Ｋｇｆ）と電気抵抗（Ω）との
関係を表した曲線３１と、第二実施例のｒ ｏｎ＝ １
５μｓ、 ｒ ｏｆｆ ＝ １０ｐｇ、電流密度２５Ａ
／ｃｍ２のパルスメッキを、レーザ光線を形成する抵抗
体の寸法、形状に照射しつ一行なって（レーザメッキに
ついては、例えば特開昭５７−２００，５９０号公報参
照）得られた抵抗体により計測した外力（Ｋｇｆ）と電
気抵抗（Ω）との関係を表した曲線３２と、レーザをメ
ッキにより得られた抵抗体に熱処理（２３０℃でｌｈ）
を施した後計測した外力（Ｋｇｆ）に対する電気抵抗（
Ω）との関係を表した曲線３３とを対比して示しである
。FIG. 3 shows a curve 31 representing the relationship between the external force (Kgf) and the electrical resistance (Ω) measured by the resistor obtained with the DC power supply of the first embodiment, and the r on of the second embodiment. = 1
5 μs, r off = 10 pg, current density 25 A
/cm2 pulse plating is performed by irradiating the size and shape of the resistor forming a laser beam (for laser plating, see, for example, Japanese Patent Application Laid-Open No. 57-200,590). Curve 32 representing the relationship between the measured external force (Kgf) and electrical resistance (Ω), and heat treatment (1h at 230°C) of the resistor obtained by laser plating.
Electrical resistance (Kgf) against external force (Kgf) measured after applying
Ω) in comparison with a curve 33 representing the relationship with Ω).
第二実施例のレーザを照射して得た抵抗体は、第一実施
例により得られた抵抗体に比して電気抵抗が最大許容外
力で約１．５倍となった。The resistor obtained by irradiating the laser of the second example had an electrical resistance approximately 1.5 times greater in maximum allowable external force than the resistor obtained by the first example.
畝上の如く、本発明に係る抵抗体は、従来公知の金属抵
抗体に比して大幅に感度を向上させることができるもの
である。As mentioned above, the resistor according to the present invention can significantly improve sensitivity compared to conventionally known metal resistors.
本発明に係る抵抗体は、力や歪の外、磁気等の計測がで
きるものであり、又例えば、ロボット、自動車、自動機
械、工具、磁石等に利用して各種各様の外力等の計測に
供することもできるものである。The resistor according to the present invention can measure not only force and strain but also magnetism, etc., and can also be used in robots, automobiles, automatic machines, tools, magnets, etc. to measure various external forces. It can also be provided to
本発明は畝上の如く構成されるから、本発明によるとき
は、磁気的特性及び機械的特性に優れ、歪を高感度に検
知することができる歪計用抵抗体を提供し得るものであ
る。Since the present invention has a ridge-like structure, it is possible to provide a resistor for a strain meter that has excellent magnetic and mechanical properties and can detect strain with high sensitivity. .
尚、本発明の構成は畝上の実施例に限定されるものでは
なく、本発明の目的の範囲内で自由に各種公知の電気メ
ッキ法、化学メッキ法等或いは磁界発生装置を用いるこ
とができるものであり、本発明はそれらの総てを包摂す
るものである。Note that the configuration of the present invention is not limited to the embodiment on the ridges, and various known electroplating methods, chemical plating methods, etc. or magnetic field generation devices can be freely used within the scope of the purpose of the present invention. The present invention encompasses all of them.
第１図は、本発明に係る歪計用抵抗体の一実施例を示す
側面断面図、第２図は、従来の歪計用抵抗体と本発明に
より得た歪計用抵抗体との歪率と電気抵抗変化率との関
係を示すグラフ、第３ＦＩ！Ｊは、本発明の他の一実施
例により得た歪計用抵抗体の外力に対する電気抵抗の関
係を示すグラフである。FIG. 1 is a side cross-sectional view showing one embodiment of a resistor for strain gauges according to the present invention, and FIG. 2 is a cross-sectional view of a conventional resistor for strain gauges and a resistor for strain gauges obtained according to the present invention. Graph showing the relationship between rate and rate of change in electrical resistance, 3rd FI! J is a graph showing the relationship between the electric resistance and the external force of the strain meter resistor obtained according to another example of the present invention.
Claims (1)
る群のなかから選ばれた少なくとも一種の金属を、磁界
中で薄層状に析出させて成る歪計用抵抗体。 ２）電気メッキ法により金属を析出させた特許請求の範
囲第１項記載の歪計用抵抗体。 ３）化学メッキ法により金属を析出させた特許請求の範
囲第１項記載の歪計用抵抗体。 ４）１ＫＧ以上の磁界内で金属を析出させた特許請求の
範囲第１項記載の歪抵抗体。[Claims] 1) A resistor for strain gauges made of at least one metal selected from the group consisting of Ni, Cr, Fe, Co, Cu, Au, and Pt, deposited in a thin layer in a magnetic field. body. 2) A resistor for a strain gauge according to claim 1, in which metal is deposited by electroplating. 3) A resistor for a strain gauge according to claim 1, in which metal is deposited by a chemical plating method. 4) The strain resistor according to claim 1, wherein metal is deposited in a magnetic field of 1 KG or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19811786A JPS6355404A (en) | 1986-08-26 | 1986-08-26 | Resistor for strain meter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19811786A JPS6355404A (en) | 1986-08-26 | 1986-08-26 | Resistor for strain meter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6355404A true JPS6355404A (en) | 1988-03-09 |
Family
ID=16385747
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19811786A Pending JPS6355404A (en) | 1986-08-26 | 1986-08-26 | Resistor for strain meter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6355404A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100386311C (en) * | 2003-12-16 | 2008-05-07 | 日本曹达株式会社 | Method for producing chlorosulfonyl isocyanate |
| WO2019098072A1 (en) * | 2017-11-15 | 2019-05-23 | ミネベアミツミ株式会社 | Strain gauge |
| WO2019124019A1 (en) * | 2017-12-20 | 2019-06-27 | 国立大学法人筑波大学 | Curvature detection sensor |
-
1986
- 1986-08-26 JP JP19811786A patent/JPS6355404A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100386311C (en) * | 2003-12-16 | 2008-05-07 | 日本曹达株式会社 | Method for producing chlorosulfonyl isocyanate |
| WO2019098072A1 (en) * | 2017-11-15 | 2019-05-23 | ミネベアミツミ株式会社 | Strain gauge |
| JP2019090721A (en) * | 2017-11-15 | 2019-06-13 | ミネベアミツミ株式会社 | Strain gauge |
| WO2019124019A1 (en) * | 2017-12-20 | 2019-06-27 | 国立大学法人筑波大学 | Curvature detection sensor |
| JPWO2019124019A1 (en) * | 2017-12-20 | 2020-12-17 | 国立大学法人 筑波大学 | Curve detection sensor |
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