JPS6355229B2 - - Google Patents

Info

Publication number
JPS6355229B2
JPS6355229B2 JP15249083A JP15249083A JPS6355229B2 JP S6355229 B2 JPS6355229 B2 JP S6355229B2 JP 15249083 A JP15249083 A JP 15249083A JP 15249083 A JP15249083 A JP 15249083A JP S6355229 B2 JPS6355229 B2 JP S6355229B2
Authority
JP
Japan
Prior art keywords
recess
laser
electronic circuit
layer
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15249083A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6045083A (ja
Inventor
Hideaki Matsueda
Takashi Kajimura
Naoki Kayane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP15249083A priority Critical patent/JPS6045083A/ja
Publication of JPS6045083A publication Critical patent/JPS6045083A/ja
Publication of JPS6355229B2 publication Critical patent/JPS6355229B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP15249083A 1983-08-23 1983-08-23 平面型半導体レ−ザ集積回路装置 Granted JPS6045083A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15249083A JPS6045083A (ja) 1983-08-23 1983-08-23 平面型半導体レ−ザ集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15249083A JPS6045083A (ja) 1983-08-23 1983-08-23 平面型半導体レ−ザ集積回路装置

Publications (2)

Publication Number Publication Date
JPS6045083A JPS6045083A (ja) 1985-03-11
JPS6355229B2 true JPS6355229B2 (enrdf_load_stackoverflow) 1988-11-01

Family

ID=15541608

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15249083A Granted JPS6045083A (ja) 1983-08-23 1983-08-23 平面型半導体レ−ザ集積回路装置

Country Status (1)

Country Link
JP (1) JPS6045083A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61270886A (ja) * 1985-05-25 1986-12-01 Mitsubishi Electric Corp 半導体レ−ザ装置

Also Published As

Publication number Publication date
JPS6045083A (ja) 1985-03-11

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